IRGB5B120KDPbF
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IRGB5B120KDPbF - IRGB5B120KDPbF
95617
IRGB5B120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
(on) Punch Through IGBT Technology. Diode 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive (on) Temperature Coefficient. TO-220 Package. Lead-Free
VCES 1200V 6.0A, TC=100°C
10µs, TJ=150°C
n-channel
VCE(on) typ. 2.75V
Benefits
Benchmark Efficiency Motor Control. Rugged Transient Performance. EMI. Excellent Current Sharing Parallel Operation.
TO-220AB
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 25°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw.
Max.
1200 +150 (0.063 (1.6mm) from case) (1.1
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
0.50 (0.07)
Max.
Units
°C/W
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(oz)
8/2/04
IRGB5B120KDPbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on) VGE(th) VGE(th)/TJ ICES IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 Temperature Coeff. Breakdown Voltage 1.15 Collector-to-Emitter Saturation Voltage 2.75 3.36 Gate Threshold Voltage Temperature Coeff. Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop 2.13 2.38 Gate-to-Emitter Leakage Current
Max. Units Conditions 500µA V/°C 1.0mA, (25°C-125°C) 6.0A 6.0A 125°C VGE, 250µA mV/°C VGE, 1.0mA, (25°C-125°C) 50V, 6.0A, PW=80µs 1200V 1200V, 125°C 2.45 6.0A 125°C 2.75 6.0A ±100 ±20V
Ref.Fig.
9,10,11 9,10,11
Switching Characteristics 25°C (unless otherwise specified)
Eoff Etot td(on) td(off) Eoff Etot td(on) td(off) Cies Coes Cres RBSOA SCSOA Erec Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ref.Fig. Max. Units Conditions 6.0A 800V 6.0A, 600V 15V,RG =3.7mH 150nH 25°C 6.0A, 600V 15V, =3.7mH 150nH, 25°C 6.0A, 600V 13,15 15V,RG =3.7mH WF1WF2 1220 150nH 125°C 6.0A, 600V 15V, =3.7mH 150nH, 125°C 1.0MHz 150°C, 24A, =1200V Reverse Bias Safe Operting Area FULL SQUARE 1000V, +15V RG=50 150°C, =1200V, Short Circuit Safe Operting Area 900V, +15V 17,18,19 Reverse Recovery energy diode 125°C Diode Reverse Recovery time 600V, 6.0A, 2.0mH CT4,WF3 Diode Peak Reverse Recovery Current 15V,RG 150nH
Min.
Typ.
Note: (VCES), 15V, 100µH, Energy losses include "tail" diode reverse recovery.
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IRGB5B120KDPbF
Ptot
(°C)
(°C)
Fig. Maximum Collector Current Case Temperature
Fig. Power Dissipation Case Temperature
10ms
0.01 1000 10000
1000
10000
Fig. Forward 25°C; 150°C
Fig. Reverse Bias 150°C; =15V
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IRGB5B120KDPbF
8.0V
8.0V
Fig. Typ. IGBT Output Characteristics -40°C; 80µs
Fig. Typ. IGBT Output Characteristics 25°C; 80µs
-40°C 25°C 125°C
8.0V
Fig. Typ. IGBT Output Characteristics 125°C; 80µs
Fig. Typ. Diode Forward Characteristics 80µs
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IRGB5B120KDPbF
6.0A
6.0A
Fig. Typical -40°C
Fig. Typical 25°C
6.0A
25°C 125°C
125°C 25°C
Fig. Typical 125°C
Fig. Typ. Transfer Characteristics 50V; 10µs
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IRGB5B120KDPbF
1200 1000
Energy (µJ)
1000
Swiching Time (ns)
tdOFF
EOFF
tdON
Fig. Typ. Energy Loss 125°C; L=3.7mH; VCE= 600V VGE=
Fig. Typ. Switching Time 125°C; L=3.7mH; VCE= 600V VGE=
1400 1200 1000
1000
tdOFF
Swiching Time (ns)
Energy (µJ)
EOFF
tdON
Fig. Typ. Energy Loss 125°C; L=3.7mH; VCE= 600V ICE= 6.0A; VGE=
Fig. Typ. Switching Time 125°C; L=3.7mH; VCE= 600V ICE= 6.0A; VGE=
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IRGB5B120KDPbF
Fig. Typical Diode 125°C
Fig. Typical Diode 125°C; 6.0A
3.0A 9.0A 6.0A
(µC)
(A/µs)
(A/µs)
Fig. Typical Diode diF/dt VCC= 600V; VGE= 15V; 6.0A; 125°C
Fig. Typical Diode VCC= 600V; VGE= 15V;TJ 125°C
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IRGB5B120KDPbF
Energy (µJ)
Fig. Typical Diode 125°C
1000
Cies
600V 800V
Capacitance (pF)
Coes Cres
Total Gate Charge (nC)
Fig. Typ. Capacitance VGE= 1MHz
Fig. Typical Gate Charge 6.0A; 600µH
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IRGB5B120KDPbF
Thermal Response thJC
0.50 0.20 0.10
0.05 0.02 0.01
(°C/W) (sec) 1.024 0.001014 0.378 0.017595
0.01
i/Ri i/Ri
SINGLE PULSE THERMAL RESPONSE
0.001 1E-006 1E-005 0.0001 0.001
Notes: Duty Factor t1/t2 Peak Zthjc
0.01
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response thJC
0.50 0.20 0.10 0.05
0.02 0.01
(°C/W) 1.045 1.214 0.540
(sec) 0.000395 0.001078 1.1386
i/Ri i/Ri
0.01
SINGLE PULSE THERMAL RESPONSE
0.001 1E-006 1E-005 0.0001 0.001
Notes: Duty Factor t1/t2 Peak Zthjc
0.01
Rectangular Pulse Duration (sec)
Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGB5B120KDPbF
1000V
Fig.C.T.1 Gate Charge Circuit (turn-off)
Fig.C.T.2 RBSOA Circuit
Driver
diode clamp
900V
DRIVER
Fig.C.T.3 S.C. Circuit
Fig.C.T.4 Switching Loss Circuit
Fig.C.T.5 Resistive Load Circuit
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IRGB5B120KDPbF
Eoff Loss -100 Time (uS)
1800 1600 1400 1200 1000
test current TEST CURRENT test current Loss
-200
(uS)
Fig.WF2-Typ. Turn-off Loss Waveform =125°C using Fig.
-100 -200 -300 -400 -500 -600 -700 -800
Fig.WF2-Typ. Turn-on Loss Waveform =125°C using Fig.
1000
0.00 50.00
time
10.00
20.00
30.00
40.00
Time(uS)
Fig.WF3-Typ. Diode Recovery Waveform =125°C using Fig.
Fig.WF4-Typ. S.C. Waveform =150°C using Fig.
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IRGB5B120KDPbF
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
Dimensions shown millimeters (inches)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
15.24 (.600) 14.84 (.584)
1.15 (.045)
LEAD ASSIGNMENTS IGBTs, CoPACK GATE GATE DRAIN GATE DRAINSOURCE COLLECTOR SOURCE EMITTER DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
DRAIN
4.06 (.160) 3.55 (.140)
COLLECTOR
1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027)
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION INCH
2.92 (.115) 2.64 (.104)
OUTLINE CONFORMS JEDEC OUTLINE TO-220AB. HEATSINK LEAD MEASUREMENTS INCLUDE BURRS.
TO-220AB Part Marking Information
XAMPL 1010 CODE 1789 1997 LINE IONAL CODE
Note: assembly line position indicates "Lead-Free"
CODE 1997
TO-220AB package recommended Surface Mount Application Data specifications subject change without notice. This product been designed qualified Industrial market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 08/04
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