IRFB13N50A
|
|
|
Top Searches for this datasheet
IRFB13N50A - IRFB13N50A
IRFB13N50A, SiHFB13N50A
Power MOSFET
RDS(on) (Max.) (nC) (nC) (nC) Configuration Single
FEATURES
0.450
Lower Gate Charge Results Simpler Drive Reqirements Improved Gate, Avalanche Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
Fully Characterized Capacitance Avalanche Voltage Lead (Pb)-free Available
TO-220
APPLICATIONS
Switch Mode Power Supply (SMPS) Uninterruptible Power Supplies
N-Channel MOSFET
High Speed Power Switching
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFB13N50APbF SiHFB13N50A-E3 IRFB13N50A SiHFB13N50A
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta SYMBOL Energyb Energya dV/dt Tstg 6-32 screw LIMIT 300d W/°C V/ns UNIT
Linear Derating Factor Single Pulse Avalanche Avalanche Currenta Repetitive Avalanche
Maximum Power Dissipation Peak Diode Recovery dV/dtc
Operating Junction Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque
Notes Repetitive rating; pulse width limited maximum junction temperature (see fig. 11). Starting dV/dt V/ns (see fig. 12a). dI/dt A/µs, VDS, from case. containing terminations RoHS compliant, exemptions apply Document Number: 91095 S-81393-Rev. 07-Jul-08 www.vishay.com
IRFB13N50A, SiHFB13N50A
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greasd Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 0.50 °C/W UNIT
SPECIFICATIONS unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Current Forward Turn-On Time IRRM dI/dt A/µsb MOSFET symbol showing integral reverse junction diode
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS/TJ VGS(th) IGSS IDSS RDS(on) Ciss Coss Crss Coss Coss eff. td(on) td(off)
Reference VGS,
0.55
0.450
V/°C
MHz, fig.
1910 2730
fig. fig.
Intrinsic turn-on time negligible (turn-on dominated
Notes Repetitive rating; pulse width limited maximum junction temperature (see fig. 11). Pulse width duty cycle Coss eff. fixed capacitance that gives same charging time Coss while rising from VDS.
www.vishay.com
Document Number: 91095 S-81393-Rev. 07-Jul-08
IRFB13N50A, SiHFB13N50A
TYPICAL CHARACTERISTICS unless otherwise noted
8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
BOTTOM
Drain-to-Source Current
Drain-to-Source Current
4.5V
PULSE WIDTH
0.01
PULSE WIDTH
VDS, Drain-to-Source Voltage
VGS, Gate-to-Source Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
Drain-to-Source Current
BOTTOM
RDS(on), Drain-to-Source Resistance
8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
4.5V
(Normalized)
PULSE WIDTH
VDS, Drain-to-Source Voltage
Junction Temperature (°C)
Fig. Typical Output Characteristics
Fig. Normalized On-Resistance Temperature
Document Number: 91095 S-81393-Rev. 07-Jul-08
www.vishay.com
IRFB13N50A, SiHFB13N50A
100000
10000
Ciss Cgd, SHORTED Crss Coss
Capacitance (pF)
Ciss
1000
ISD, Reverse Drain Current
Coss
Crss
1000
VDS, Drain-to-Source Voltage
Fig. Typical Capacitance Drain-to-Source Voltage
VSD, Source-to-Drain Voltage
Fig. Typical Source-Drain Diode Forward Voltage
1000
400V 250V
Drain-to-Source Current
OPERATION THIS AREA LIMITED RDS(on)
VGS, Gate-to-Source Voltage
100sec 1msec
25°C 150°C Single Pulse 10msec
Total Gate Charge (nC)
1000
10000
VDS, Drain-to-Source Voltage
Fig. Maximum Safe Operating Area
Fig. Typical Gate Charge Gate-to-Source Voltage
www.vishay.com
Document Number: 91095 S-81393-Rev. 07-Jul-08
IRFB13N50A, SiHFB13N50A
D.U.T.
Drain Current
Pulse width Duty factor
Fig. Switching Time Test Circuit
Case Temperature (°C)
td(on) td(off)
Fig. Maximum Drain Current Case Temperature
Fig. Switching Time Waveforms
0.50
Thermal Response (ZthJC)
0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak ZthJC
0.01
0.001 0.00001
0.001
0.001
0.01
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Driver
D.U.T. 0.01
Fig. Unclamped Inductive Waveforms
Fig. Unclamped Inductive Test Circuit Document Number: 91095 S-81393-Rev. 07-Jul-08
www.vishay.com
IRFB13N50A, SiHFB13N50A
1150
6.3A 8.9A
BOTTOM
EAS, Single Pulse Avalanche Energy (mJ)
Starting Junction Temperature (°C)
Fig. Maximum Avalanche Energy Drain Current
Current regulator Same type D.U.T.
D.U.T.
Charge
Current sampling resistors
Fig. Basic Gate Charge Waveform
Fig. Gate Charge Test Circuit
www.vishay.com
Document Number: 91095 S-81393-Rev. 07-Jul-08
IRFB13N50A, SiHFB13N50A
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
Circuit layout considerations stray inductance Ground plane leakage inductance current transformer
dV/dt controlled Driver same type D.U.T. controlled duty factor D.U.T. device under test
Driver gate drive P.W. Period
P.W. Period
D.U.T. waveform Reverse recovery current Body diode forward current dI/dt D.U.T. waveform Diode recovery dV/dt
Re-applied voltage Inductor current
Body diode forward drop
Ripple
logic level devices
Fig. N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
Document Number: 91095 S-81393-Rev. 07-Jul-08
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
product specifications data subject change without notice. Vishay Intertechnology, Inc., affiliates, agents, employees, persons acting their behalf (collectively, "Vishay"), disclaim liability errors, inaccuracies incompleteness contained herein other disclosure relating product. Vishay disclaims liability arising application product described herein information provided herein maximum extent permitted law. product specifications expand otherwise modify Vishay's terms conditions purchase, including limited warranty expressed therein, which apply these products. license, express implied, estoppel otherwise, intellectual property rights granted this document conduct Vishay. products shown herein designed medical, life-saving, life-sustaining applications unless otherwise expressly indicated. Customers using selling Vishay products expressly indicated such applications entirely their risk agree fully indemnify Vishay damages arising resulting from such sale. Please contact authorized Vishay personnel obtain written terms conditions regarding products designed such applications. Product names markings noted herein trademarks their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com
Other recent searches
STP16DPP05 - STP16DPP05 STP16DPP05 Datasheet
SPS-93100W-CXX0G - SPS-93100W-CXX0G SPS-93100W-CXX0G Datasheet
SiS530 - SiS530 SiS530 Datasheet
SIGC158T120R3L - SIGC158T120R3L SIGC158T120R3L Datasheet
MPC9230 - MPC9230 MPC9230 Datasheet
LIN-5640XX - LIN-5640XX LIN-5640XX Datasheet
LIN-5641XX - LIN-5641XX LIN-5641XX Datasheet
BSK313P - BSK313P BSK313P Datasheet
2SK2385 - 2SK2385 2SK2385 Datasheet
Privacy Policy | Disclaimer
© 2013 Datasheets.org.uk