| Fulltext Datasheet Results |
1 - 50 of about 396 for IRF 930 |
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First line: IRF 930 GB50YF120N IGBT FOUR MODULE Abstract: .. www.irf.com. BV CES Collector-to-Emitter Breakdown Voltage 1200 - - V VGE = 0 IC = 500μA. VCE ON .. EON Turn-On Switching Loss - 930 - μJ IC = 50A VCC = 600V. EOFF Turn-Off Switching Loss - 1198 - VGE .. Tags: IRF 930 IGBT 900v 50a HF IGBT GB50YF120N |
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First line: 95307 Appications High frequency DC-DC converters Lead-Free Abstract: .. Ciss Input Capacitance ––– 930 ––– VGS = 0V. Coss Output Capacitance ––– 130 ––– VDS = 25V. Crss .. www.irf.com 5. Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient. 0 .. Tags: IRF 930 IRF7453PBF |
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First line: 96113 IRF7452QPbF Abstract: .. Ciss Input Capacitance ––– 930 ––– VGS = 0V. Coss Output Capacitance ––– 300 ––– VDS = 25V. Crss .. www.irf.com 5. Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient. 0 .. Tags: IRF 930 IRF7452QPbF |
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First line: RG 603 igbt 1200V 40A irf 930 I27124 rev. 02/03 20MT120UF "FULL-BRIDGE" IGBT Abstract: .. www.irf.com. V BR CES Collector-to-Emitter Breakdown Voltage 1200 V VGE = 0V, IC = 250μA ∆V BR .. Eon Turn-On Switching Loss 930 1395 μJ VCC = 600V, IC = 20A. Eoff Turn-Off Switching Loss 610 915 .. Tags: igbt 1200V 40A RG 603 IRF E78996 irf 930 ir igbt 1200V 10A I27124 |
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First line: 95758A IRF3305PbF Designed support Linear Gate Drive Applications 175°C Operating Temperature Thermal Resistance Junction Case Rugged Process Technology Design Fully Avalanche Rated Lead-Free Abstract: .. Coss Output Capacitance ––– 930 ––– Coss eff. Effective Output Capacitance ––– 1490 .. www.irf.com 5. Fig 11. Maximum Effective Transient Thermal .. Tags: IRF 930 IRF3305PbF |
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First line: 95879 AUTOMOTIVE MOSFET Designed support Linear Gate Drive Applications 175°C Operating Temperature Thermal Resistance Junction Case Rugged Process Technology Design Fully Avalanche Rated Abstract: .. 2 www.irf.com. Repetitive rating; pulse width limited by max. junction temperature. See .. Coss Output Capacitance ––– 930 ––– Coss eff. Effective Output Capacitance ––– 1490 .. Tags: IRF 930 datasheet abstract.. |
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First line: 95843 IRF3717 HEXFET® Power MOSFET Applications Synchronous MOSFET Notebook Processor Power Synchronous Rectifier MOSFET Isolated DC-DC Converters Networking Systems Abstract: .. Coss Output Capacitance ––– 930 ––– pF. Crss Reverse Transfer Capacitance ––– 430 .. www.irf.com 5. Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient .. Tags: IRF3717 IRF 930 IRF3717 |
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First line: 95879 AUTOMOTIVE MOSFET Designed support Linear Gate Drive Applications 175°C Operating Temperature Thermal Resistance Junction Case Rugged Process Technology Design Fully Avalanche Rated Abstract: .. 2 www.irf.com. Repetitive rating; pulse width limited by max. junction temperature. See .. Coss Output Capacitance ––– 930 ––– Coss eff. Effective Output Capacitance ––– 1490 .. Tags: IRF 930 IRF3305 |
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First line: 93923 PROVISIONAL IRFPS40N50L HEXFET® Power MOSFET Abstract: .. Coss Output Capacitance ––– 930 ––– VDS = 25V. Crss Reverse Transfer Capacitance ––– 56 ––– pF ƒ = 1 .. www.irf.com 3. PROVISIONAL. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California .. Tags: IRF 930 full bridge mosfet smps IRFPS40N50L |
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First line: 93922 PROVISIONAL IRFPS43N50K HEXFET® Power MOSFET Abstract: .. Coss Output Capacitance ––– 930 ––– VDS = 25V. Crss Reverse Transfer Capacitance ––– 56 ––– pF ƒ = 1 .. www.irf.com 3. PROVISIONAL. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California .. Tags: 3055L IRF 930 DIODE S 43a IRFPS43N50K |
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First line: 97323 IRFP4004PbF Applications High Efficiency Synchronous Rectification SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched High Frequency Circuits Abstract: .. 2 www.irf.com. Calculated continuous current based on maximum allowable junction .. Crss Reverse Transfer Capacitance ––– 930 ––– Coss eff. ER Effective Output Capacitance .. Tags: 3110 0001 mosfet irfp4004* IRF 930 IRFP4004PbF |
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First line: ST203S SERIES INVERTER GRADE THYRISTORS Stud Version Abstract: .. www.irf.com. Voltage VDRM/VRRM, maximum VRSM , maximum IDRM/IRRM max. Type number Code .. 1000Hz 520 320 930 630 1730 1200 A. 2500Hz 370 210 780 510 890 580. Recovery voltage Vr 50 50 50 50 50 50 .. Tags: THYRISTOR di/dt 100A/uS IRF 930 ST203S |
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First line: 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.014 0.014 0.014 0.014 35*A 35*A 35*A 35*A Abstract: .. www.irf.com 1. Product Summary Part Number Radiation Level RDS on ID IRHM7Z60 100K Rads Si 0 .. QRR Reverse Recovery Charge — — 930 μC VDD ≤ 50V ➃. ton Forward Turn-On Time Intrinsic turn-on time .. Tags: IRF 930 IRHM7Z60 IRHM3Z60 IRHM4Z60 IRHM8Z60 |
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First line: 93899A Applications High frequency DC-DC converters IRF7453 Abstract: .. Ciss Input Capacitance ‐‐‐ 930 ‐‐‐ VGS = 0V. Coss Output Capacitance ‐‐‐ 130 ‐‐‐ VDS = 25V. Crss .. www.irf.com 5. Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient. 0 .. Tags: IRF7453 |
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First line: 93897A Applications High frequency DC-DC converters IRF7452 Abstract: .. Ciss Input Capacitance ‐‐‐ 930 ‐‐‐ VGS = 0V. Coss Output Capacitance ‐‐‐ 300 ‐‐‐ VDS = 25V. Crss .. www.irf.com 5. Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient. 0 .. Tags: IRF 930 IRF7452 |
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First line: 93897C Applications High frequency DC-DC converters IRF7452 Abstract: .. Ciss Input Capacitance ––– 930 ––– VGS = 0V. Coss Output Capacitance ––– 300 ––– VDS = 25V. Crss .. www.irf.com 5. Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient. 0 .. Tags: 24v 5a smps IRF 930 IRF7452 |
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First line: IRF244 MOSFET IRF460 irf4405* IRF 24N HJ 13002* Aerospace Defense Products Short Form Catalog 2007 Welcome Aerospace Defense Products Short Form Catalog. Inside overview product line including product specific information. learn more, visit site irf.com where will find technical documents, data she Abstract: .. Visit http://tac.irf.com for access to interactive FAQs and technical support. Information .. 35CGQ150150351150.930.80.10.63TO-254AA. 12CGQ150150351001.13 15A 0.86 15A 0.50 .. Tags: HJ 13002* IRF 24N irf4405* MOSFET IRF460 IRF244Â zener smd marking 51* Zener diode smd marking ck we 751002 s transistor SMD 12W MOSFET TRANSISTOR MARKING YB TRANSISTOR 2N 4401 Tech MOS Technology smd transistor 3j Silicon Controlled Rectifier Manual RIC7113L4 RIC7113E4 datasheet abstract.. |
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First line: IRGPH40MD2 Preliminary Data Sheet 9.1118 IRGPH40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Abstract: .. tf Fall Time — 510 930 Energy losses include "tail" and. Eon Turn-On Switching Loss — 2.1 — diode .. Note: For the most current drawings please refer to the IR website at: http://www.irf.com .. Tags: IRGPH40MD2 TO-247AC Package igbt IRF 930 930 18a IRGPH40MD2 |
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First line: IRC540 equivalent IRF N-Channel Power MOSFETs MOSFET IRF 1540 IRFR9024 PDF Irf 1540 N HEXFET® Power MOSFETs Continuous Drain Current 70°C Thermal Resistance (°C/W) Max. Power Dissipation 25°C Fax-onDemand Abstract: .. IRLR3103 9133 36 930 0.019 46 29 1.8. P-Channel. IRFR9014 9065 42 5-60 0.5 -5.1 -3.2 5. IRFR9024 9065 .. Page 10 www.irf.com. Continuous. 25°C. HEXFET® Power MOSFETs. Part Number. Fax-on-Demand A W .. Tags: Irf 1540 N IRFR9024 PDF MOSFET IRF 1540 IRF N-Channel Power MOSFETs IRC540 equivalent P-Channel Power MOSFETS mosfet p channel irf mosfet IRFZ34N IRLML6302 IRLML5103 IRLL3303 irli530g IRL3803S IRL3705N IRFZ46N IRFZ44N datasheet abstract.. |
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First line: TGS 813 irfp 540 5*51 National Semiconductor 9403A First-ln First-Out (FIFO) Buffer Memory April 1989 9403A expandable fall-through type high-speed First-ln First-Out (FIFO) Buffer Memory optimized highspeed disk tape controllers communication buffer applications. organized 16-words 4-bits expanded Abstract: .. .4 0.4 0.5 0.5 V Min lOL = 4 mA IRF, DRE Iol = 8 mA Qn, Qs IOL = 8 mA IRF, 5RË IOL = 16mA Qn, Qs l|H .. ¡015 x4S TOP VIEW 1.691-1.930 SIDE VIEW 28 Terminal Ceramic Leadless Chip Carrier L NS .. Tags: irfp 540 TGS 813 datasheet abstract.. |
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First line: IRF4905 data sheet IRFI4905 55V MOSFET P-Channel IRF4905 equivalent 9.1526A IRFI4905 HEXFET® Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation 2.5KVRMS Sink Lead Creepage Dist. 4.8mm P-Channel Fully Avalanche Rated Description Abstract: .. EAS Single Pulse Avalanche EnergyÇÜ 930 mJ. IAR Avalanche CurrentÅÜ -38 A. EAR Repetitive .. 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without .. Tags: 55V MOSFET P-Channel IRFI4905 IRF4905 data sheet irf4905. IRF4905 equivalent IRF4905 IRF 930 IRFI4905 |
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First line: ST223C.C SERIES INVERTER GRADE THYRISTORS Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability thermal impedance High speed performance Abstract: .. 2 www.irf.com. Bulletin I25174 rev. A 04/94. Voltage VDRM/VRRM, maximum VRSM , maximum IDRM .. 50Hz 930 800 1430 1220 5870 5240. 400Hz 910 770 1490 1300 3120 2740. 1000Hz 780 650 1430 1260 1880 .. Tags: IRF 930 ST223C |
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First line: IRF4905 equivalent 9.1526A IRFI4905 HEXFET® Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation 2.5KVRMS Sink Lead Creepage Dist. 4.8mm P-Channel Fully Avalanche Rated Description Abstract: .. EAS Single Pulse Avalanche EnergyÇÜ 930 mJ. IAR Avalanche CurrentÅÜ -38 A. EAR Repetitive .. 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without .. Tags: irf4905. IRF4905 equivalent IRF4905 IRF 930 IRFI4905 |
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First line: 30100* SM4007TR SMB sm4001tr F(AV) (°C) (DC) °C/W Notes Fax-on-Demand Abstract: .. NOTES: www.irf.com 1 Available on tape-and-reel. 2 For Ifsm: 100% VRRM reapplied, Tj=Tj max .. 1 930 7265 0.073. 12. 23. 5. SD400C08C 82084 6940 800 800 55 1.86. 1 930 7265 0.073. 12. 23. 5. SD400C12C 82084 .. Tags: 30100* TFA1001W SM4007TR SMB SM4005TR SM4004TR sm4001tr SD2500C25K SD1500C20L IRKE320-08 IRKD91-12 IRKD56-12 IRKD250-04 datasheet abstract.. |
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First line: ST223C.C SERIES INVERTER GRADE THYRISTORS Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability thermal impedance High speed performance Abstract: .. 2 www.irf.com. Bulletin I25174 rev. B 04/00. Voltage VDRM/VRRM, maximum VRSM , maximum IDRM .. 50Hz 930 800 1430 1220 5870 5240. 400Hz 910 770 1490 1300 3120 2740. 1000Hz 780 650 1430 1260 1880 .. Tags: IRF 930 hp 3120 ST223C |
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First line: 94816 IRF4905PbF Advanced Process Technology Ultra On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on Abstract: .. EAS Single Pulse Avalanche Energy 930 mJ. IAR Avalanche Current -38 A. EAR Repetitive Avalanche .. TAC Fax: 310 252-7903 Visit us at www.irf.com for sales contact information.11/03. Note: For .. Tags: IRF4905PbF |
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First line: ESAD33(C,IM,D)(15A) Features High voltage mesa design. High reliability Applications High speed power switching. Abstract: .. '> lVilii" 1'7 t:: M 1"151 1"390 1" 151 1"553 1"930 1"760 1"460 ;'810 *t~;!\"'IRf't"'*I1!lTEl30ll!3'> lVilii" 1'7 t:: M f'~*,"<p~I1!lT El5l1!35'> JJ<!lH\!i1i~~il1! *;;;:t~;!<"'IRf .. Tags: datasheet abstract.. |
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First line: 9.1138 IRGPH20S INSULATED GATE BIPOLAR TRANSISTOR Abstract: .. td off Turn-Off Delay Time — 930 1400 VGE = 15V, RG = 50Ω. tf Fall Time — 850 1550 Energy losses .. Note: For the most current drawings please refer to the IR website at: http://www.irf.com .. Tags: IRF 930 IRGPH20S |
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First line: OPB50* emitter phototransistor til 31 OP550 OPTEK TECHNOLOGY fc.7TflSaD DOODlbQ fffff Optoelectonics Division Electonic Components Goup Poduct Bulletin 5119 Januay 1965 Silicon Phototansistos Types OP550, 0P550SLD, OP550SLC, OP550SLB, OP550SLA (12.71 Abstract: .. Electrical Characteristics ITa - 25"C unless otherwise noted T'^-irf a Symbol Parameter Min .. - 930 · 15 .. Optoelectronics Division, TRW Electronic Compon~nts Group. 1215 W. Crosby Rd. .. Tags: OP550 emitter phototransistor til 31 OPB50* datasheet abstract.. |
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First line: 94816 IRF4905PbF Advanced Process Technology Ultra On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on Abstract: .. EAS Single Pulse Avalanche Energy 930 mJ. IAR Avalanche Current -38 A. EAR Repetitive Avalanche .. TAC Fax: 310 252-7903 Visit us at www.irf.com for sales contact information.11/03 .. Tags: Single P-Channel HEXFET Power MOSFET in a TO-220A IRF4905PBF IRF 930 IRF4905PbF |
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First line: DIODE MARKING GU tt 151 n diode c2s ERD29(2 aanEst^sr-K Features Large current High voltage mesa design. High reliability Applications High speed switching. Abstract: .. JI;:*~~;j\i'i'IRf':"'*gJJTEl30lll3" illilii":J1'"'7 t:: M JiI!It1!tMR n 0263 36-6740 .. *~ t:: M ~~~m-MR n 0764 41-1231 '1'930 IOLlJ1I1jli~iJlj3ll11" lii"LlJlltlK t:: M I1!II1 .. Tags: diode c2s tt 151 n DIODE MARKING GU datasheet abstract.. |
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First line: S_SSlSRtTSK CF007-01 Preliminary Product Information 1988 (iof2) Implanted Active Layer Uniformity High Insertion Gain Useful PldB Ti/Pt/Au Recessed Gates Silicon Nitride Passivation Gold Metal System Abstract: .. anngs__versus channel tfmpfrrti irf Parameter Drain-Source Voltage, V^g Gate-Source .. 3 0.048 126 0.930 -69 -0.22 - 20 0.683 -125 8.2 2.570 5 -25 .6 0.052 103 1.015 -92 -0.57 - 22 0.645 - .. Tags: datasheet abstract.. |
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First line: 1280c* IRF4905 IRF4905 equivalent 9.1280C IRF4905 HEXFET® Power MOSFET Advanced Process Technology Ultra On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description Abstract: .. EAS Single Pulse Avalanche EnergyÇ 930 mJ. IAR Avalanche CurrentÅ -38 A. EAR Repetitive .. Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and .. Tags: 1280c* IRF4905Â irf4905. IRF4905 equivalent IRF4905 data sheet IRF4905 IRF 930 IRF4905 |
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First line: irf 2952 x10 frequency multiplier cxa FM radio Advanced pager receiver UAA2082 Wide frequency range: VHF, bands High sensitivity High dynamic range Electronically adjustable filters chip Suitable data rates 2400 bits/s Abstract: .. For a received input frequency fj RF = 930.500 MHz an external oscillator signal must be used .. C9 □ QO „-C7 C8 R5 I 1 CIS nu, i_j ■f ] C4 I— 3 ^ R1 ■ IRF DO TPI TPQ Fig.15 PCB top view with components for .. Tags: cxa FM radio x10 frequency multiplier irf 2952 datasheet abstract.. |
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First line: ds1245w DS1245W 3.3V 1024K Nonvolatile SRAM years minimum data retention absence external power Data automatically protected during power loss Abstract: .. WITH POWERCAP ^üüüüüüüüüüüüüüüflj ^TMÖ55555Ö555ÜÖ55J J. tg -irF -I rE /üüüüüüüüüüüüüüüüün .. INCHES MIN NOM MAX A 0.920 0.925 0.930 B 0.955 0.960 0.965 C 0.240 0.245 0.250 D 0.052 0.055 0.058 E .. Tags: datasheet abstract.. |
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First line: ds1250w DS1250W 3.3V 4096K Nonvolatile SRAM ASSIGNMENT years minimum data retention absence Abstract: .. WITH POWERCAP ^üüüüüüüüüüüüüüüflj ^TMÖ55555Ö555ÜÖ55J J. tg -irF -I rE /üüüüüüüüüüüüüüüüün .. INCHES MIN NOM MAX a 0.920 0.925 0.930 b 0.955 0.960 0.965 c 0.240 0.245 0.250 d 0.052 0.055 0.058 e .. Tags: datasheet abstract.. |
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First line: 1117 S 3,3 Transistor transistor de 1200v 5a 9.1117 IRGPH40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Abstract: .. tf Fall Time — 930 — Energy losses include "tail" and. Ets Total Switching Loss — 15 — mJ diode .. Note: For the most current drawings please refer to the IR website at: http://www.irf.com .. Tags: transistor de 1200v 5a 1117 S 3,3 Transistor IRF 930 930 18a IRGPH40FD2 |
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First line: si 220 mh Provisional Data Sheet 9.1701 REPETITIVE AVALANCHE dv/dt RATED HEXFET TRANSISTOR Abstract: .. QRR Reverse Recovery Charge — — 930 nC VDD ≤ 50V Ñ. ton Forward Turn-On Time Intrinsic turn-on time .. Tags: si 220 mh IRF 930 datasheet abstract.. |
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First line: -5.056 GA150TS60U Ultra-FastTM Speed IGBT Abstract: .. Qg Total Gate Charge turn-on — 620 930 VCC = 400V. Qge Gate - Emitter Charge turn-on — 86 130 nC .. Tags: RY 227 IRF 930 GA150TS60U |
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First line: 2SD1158 TRIPLE DIFFUSED PLANER TYPE WAMv+yy* HIGHSPEED SWITCHING ^fl^ii Outline Drawings Features High speed switching High D.C. current gain saturation voltage ftfsfttt High reliability Applications Switching regulators #DC-DCX"<-* DC-DC convertor Solid state relay Abstract: .. ^ Sí < ä @ S « s ® 5 -SèJ tv irf ■h -h ■tí TÜ -M 1! m í¿ 6 ^ JJ yg s u »V í= A] K» m t T? i i , H? ^ -tí -R « ^ o ü « £ ü « -tí ■ .. - 'i' 151 'i'390 'i' 151 'i'553 'i'930 'i'760 'i'460 'i'810 Jt;:Ji ~B;!,;~13: 1"'''' *g]3T .. Tags: datasheet abstract.. |
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First line: ET386 fry. TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON INDUSTRIAL POWER SUPPLY hpe^'Su High D.C. current gain High reliability Applications Abstract: .. I :lill i/O I: Ii, *;1} iJ " 7' 1:'ciIXO ~,~, irf~}ij L. I : w " <to ~ P, , 'j"ilJlillil,Y , W 'l .. 1l::J '\'7 t:: I" '1'151 '1'390 '1' 151 '1'553 '1'930 '1'760 '1'460 '1'810 JI;:*Il;~1 .. Tags: datasheet abstract.. |
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First line: 2FI50A(2X50A) Outline Drawings iMiftfl^FaJ/^iav,* Short Reverse Recovery Time Variety Connection Menu Insulated Type Applications T-tmmm&Jimtitm Arc-Welders Abstract: .. 0 06 455-6467 T553 ^BETÛÎi EI»iW-TailS19^ ﱫ«I^IRf^ 0 0764 41-1231 t930 SULim«f«ä3 .. VI '1' 151 '1'390 '1' 151 '1'553 '1'930 '1'760 '1'460 T8lO. ft 03 5388-7657 ft 03 5388 .. Tags: datasheet abstract.. |
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First line: ESJC30(4 5kV, 2kV) Outline Drawings HIGH VOLTAGE SILICON DIODE sv-mfamwi^y-fb^tf+ismmzx&kitzfc ESJC30 high reliability high current capability type resin molded high voltage silicon diode which sealed multilayed mesa type silicon chip epoxy resin. Features Small size High current capability fltt Abstract: .. \;;lRf"t" *~T 13301113" liTm:J"\'7 t: II- 'i'151 'i'390 'i'151 'i'553 'i'930 'i'760 'i .. \-i'i'IRf"t" *~T 1330ll!3" liTm:J"\'7 t: Jv :t:~iTilli~IR.;IH- T 1311l1!I9" 1i' I'!A .. Tags: datasheet abstract.. |
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First line: colpitts oscillator 50MHz Colpitts IRF 949 colpitts oscillator 27 mhz application of colpitts oscillator SL6649-1 3115 SL6649-1 200MHz DIRECT CONVERSION DATA RECEIVER Abstract: .. 26, 27 IRF Included. Supply Current ICC2 6,16 0.65 0.80 mA. Power Down lCC1 17, 21, 25, 5 12 μA Batt .. 250.000 0.930 -20.764. 300.000 0.915 -20.853. 350.000 0.891 -30.479. 400.000 0.866 -40.734. 450 .. Tags: application of colpitts oscillator colpitts oscillator 27 mhz IRF 949 50MHz Colpitts IRF 930 colpitts oscillator Colpitts circuit design SL6649-1 |
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First line: marking F53 9.1478A IRF4905S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF4905S) Low-profile through-hole (IRF4905L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description Abstract: .. EAS Single Pulse Avalanche EnergyÇÖ 930 mJ. IAR Avalanche CurrentÅ -38 A. EAR Repetitive .. Note: For the most current drawings please refer to the IR website at: http://www.irf.com .. Tags: marking F53 IRF4905S/L* irf4905. IRF4905 equivalent IRF4905 IRF 930 IRF4905S L IRF4905L |
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First line: application of colpitts oscillator SPM28C51* Colpitts circuit design colpitts oscillator 50MHz Colpitts SL6649-1 3115 SL6649-1 200MHz DIRECT CONVERSION DATA RECEIVER Abstract: .. 26, 27 IRF Included. Supply Current ICC2 6,16 0.65 0.80 mA. Power Down lCC1 17, 21, 25, 5 12 μA Batt .. 250.000 0.930 -20.764. 300.000 0.915 -20.853. 350.000 0.891 -30.479. 400.000 0.866 -40.734. 450 .. Tags: 50MHz Colpitts SPM28C51* application of colpitts oscillator wristwatch* IRF 930 colpitts oscillator Colpitts circuit design SL6649-1 |
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First line: 50MHz Colpitts SPM28C51* colpitts oscillator SPM28C* This product obsolete. This information available your convenience only. more information Zarlink's obsolete products replacement product lists, please visit SL6649-1 Abstract: .. 26, 27 IRF Included. Supply Current ICC2 6,16 0.65 0.80 mA. Power Down lCC1 17, 21, 25, 5 12 μA Batt .. 250.000 0.930 -20.764. 300.000 0.915 -20.853. 350.000 0.891 -30.479. 400.000 0.866 -40.734. 450 .. Tags: SPM28C* SPM28C51* 50MHz Colpitts wristwatch lcd IRF 930 Direct conversion receiver colpitts oscillator Colpitts circuit design Colpitts* A/Direct conversion receiver SL6649-1 |
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First line: ds1250y/ab DS1250Y/AB 4096K Nonvolatile SRAM years minimum data retention absence external power Data automatically protected during power loss Replaces 512K volatile static RAM, EEPROM Flash memory Abstract: .. J. tg -irF -I rE /üüüüüüüüüüüüüüüüün PKG DIM INCHES MIN NOM MAX A 0.920 0.925 0.930 B 0.955 0.960 0.965 C 0.240 0.245 0.250 D 0.052 0.055 0.058 E 0.048 0.050 0.052 F 0.015 0.020 0.025 G 0.020 0.025 0.030 .. Tags: datasheet abstract.. |
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First line: DS1350W years minimum data retention absence external power Data automatically protected during power loss Power supply monitor resets processor when power loss occurs holds processor reset during ramp-up Battery monitor checks remaining capacity daily Read write access times fast Abstract: .. -PIN POWERCAP MODULE PKG DIM INCHES MIN NOM MAX A 0.920 0.925 0.930 B 0.980 0.985 0.990 C - - 0.080 D .. ^TMÖ55555Ö555ÜÖ55J J. tg -irF -I rE /üüüüüüüüüüüüüüüüün BOTTOM VIEW: REFERENCE ONLY PKG DIM .. Tags: datasheet abstract.. |
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First line: DS1330Y/AB DS1330Y/AB UALLAO 256K Nonvolatile SRAM semiconductor with Battery Monitor ASSIGNMENT years minimum data retention absence external power Data automatically protected during power loss Power supply monitor resets processor when power loss occurs holds processor reset during ramp-up Abstract: .. irF -I rE /üüüüüüüüüüüüüüüüün PKG DIM INCHES MIN NOM MAX A 0.920 0.925 0.930 B 0.955 0.960 0.965 C 0.240 0.245 0.250 D 0.052 0.055 0.058 E 0.048 0.050 0.052 F 0.015 0.020 0.025 G 0.020 0.025 0.030 ASSEMBLY .. Tags: datasheet abstract.. |
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