ILB03N60
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ILB03N60 - ILB03N60
ILB03N60
LightMOS Power Transistor
high voltage technology designed ZVS-switching lamp ballasts IGBT with integrated reverse diode current rating reverse diode times lower gate capacitance than MOSFET Avalanche rated 150°C operating temperature FullPak isolates min.) Qualified according JEDEC1 target applications
P-TO-263-3-2 (D2-PAK) (TO-263AB)
Type ILB03N60 Maximum Ratings Parameter
600V
3.0A
VCE(sat),Tj=25°C 2.9V
Tj,max 150°
Package P-TO-263-3-2
Ordering Code Q67040-S4627
Symbol 25°C 100°C ICpuls IFpuls dv/dt Ptot Tstg
Value ILA03N60 0.32
Others
Unit
Collector-emitter voltage collector current
Pulsed collector current, limited Tjmax, Pulsed collector current, limited Tjmax Diode forward current 25°C 100°C Diode pulsed current, limited Tjmax, Diode pulsed current, limited Tjmax Avalanche energy, single pulse IC=0.4A, VCE=50V Gate-emitter voltage Reverse diode dv/dt 450V, Tjmax 150°C Power dissipation 25°C) Operating junction storage temperature Soldering temperature (reflow soldering, MSL1)
V/ns
-55.+150
J-STD-020 JESD-022 Reverse diode transistor commutated with same device according figure With application relevant values 1.5A, CSnubber dv/dt reverse diode within specification.
Power Semiconductors
Rev.
ILB03N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Therm. resistance, junction ambient version, device PCB: min. footprint cooling area
Symbol RthJC RthJCD
Conditions
Max. Value
Unit
RthJA
Electrical Characteristic, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter avalanche breakdown voltage Collector-emitter saturation voltage V(BR)CE VCE(sat) Diode forward voltage Gate-emitter threshold voltage VGE(th) Symbol Conditions Value min. typ. max. Unit
Device 40mm*40mm*1.5mm epoxy FR4with 6cm2 (one layer, 70µm thick) copper area drain connection. vertical without blown air.
Power Semiconductors
Rev.
ILB03N60
Electrical Characteristic, unless otherwise specified Parameter Zero gate voltage collector current Symbol ICES Conditions 600V Gate-emitter leakage current Transconductance Capacities, Gate Charge, Tj=25 Parameter Input capacitance Output capacitance Reverse transfer capacitance Effective Output Capacitance (Energy related) Gate emitter charge Gate collector charge Gate total charge Gate plateau voltage Gate emitter charge Gate collector charge Gate total charge Gate plateau voltage Symbol Ciss Coss Crss Co(er) 400V Conditions 25V, 400V Value min. typ. max. Unit IGES 20V, continued Value min. typ. max. Unit
Switching Characteristic, Inductive Load, Tj=25 Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Turn-off energy td(on) td(off)
Symbol
Conditions
Value min. typ. max.
Unit
00V, apac
Eoff Eoff
includes SDP04S60 diode commutation losses Rev.
Power Semiconductors
ILB03N60
Switching Characteristic, Inductive Load, Tj=150 Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Turn-off energy td(on) td(off)
Symbol
Conditions
Value min. typ. max.
Unit
00V, apac
Eoff Eoff
Switching Characteristic, Inductive Load, Tj=25 Parameter Symbol Conditions Value min. typ. max. Unit
Reverse diode Characteristic (switching half bridge configuration with same transistor according figure Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate fall reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate fall reverse recovery current Irrm Irrm 00V, 00V, 0.27 0.75 A/µs A/µs
Power Semiconductors
Rev.
ILB03N60
tp=4µs
tp=4µs
COLLECTOR CURRENT
15µs 50µs 200µs 0,1A 0,01A 100V 1000V
COLLECTOR CURRENT
15µs 50µs
200µs 0,1A
0,01A 100V 1000V
SWITCHING FREQUENCY Figure Safe operating area (FullPak) 25°C, 150°C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure Safe operating area (Other Packages) 25°C, 150°C)
COLLECTOR CURRENT
POWER DISSIPATION
Other Packages
Other Packages
Fullpak
Ptot,
FullPak
100°
125°
100°
125°
150°
CASE TEMPERATURE Figure Power dissipation function case temperature 150°C)
CASE TEMPERATURE Figure Collector current function case temperature (VGE 10V, 150°C)
Power Semiconductors
Rev.
ILB03N60
=15V
COLLECTOR CURRENT
COLLECTOR CURRENT
=15V
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical output characteristics 25°C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical output characteristics 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 1.0V -50°C 50°C Ic=1A Ic=0.5A 100°C 150°C Ic=3A Ic=4A
+25°C +150°
COLLECTOR CURRENT
VGE, GATE-EMITTER VOLTAGE Figure Typical transfer characteristics (VCE 20V)
JUNCTION TEMPERATURE Figure Typical collector-emitter saturation voltage function junction temperature (VGE 10V)
Power Semiconductors
Rev.
ILB03N60
td(off)
100ns
SWITCHING TIMES
SWITCHING TIMES
100ns
td(off)
td(on)
td(on) 10ns
10ns 0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
COLLECTOR CURRENT Figure Typical switching times function collector current (inductive load, 150°C, 400V, 0/+10V, Dynamic test circuit Figure
GATE RESISTOR Figure Typical switching times function gate resistor (inductive load, 150°C, 400V, 0/+10V, Dynamic test circuit Figure
80µJ
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
3.4V
70µJ
includes losses diode recovery.
3.2V
SWITCHING ENERGY LOSSES
60µJ 50µJ 40µJ 30µJ 20µJ 10µJ 0,5A
Eoff
3.0V 2.8V 2.6V 2.4V 2.2V 2.0V -50°C 50°C 100°C 150°
Eon*
Eoff,
Snubber
=1nF
1,0A
1,5A
2,0A
2,5A
3,0A
JUNCTION TEMPERATURE Figure Gate-emitter threshold voltage function junction temperature 30µA)
COLLECTOR CURRENT Figure Typical switching energy losses function collector current (inductive load, 150°C, 400V, 0/+10V, CSnubber=0/1nF Dynamic test circuit Figure
Power Semiconductors
Rev.
ILB03N60
35µJ
includes losses diode recovery.
34µJ 32µJ 30µJ 28µJ 26µJ 24µJ 22µJ 20µJ 18µJ 16µJ 14µJ 12µJ 10µJ Eoff, Snubber
Eoff
includes losses diode recovery.
30µJ
SWITCHING ENERGY LOSSES
25µJ Eoff 20µJ
Eon*
15µJ
Eon*
=1nF
10µJ Eoff,
Snubber
=1nF
100°
150°
GATE RESISTOR Figure Typical switching energy losses function gate resistor (inductive load, 150°C, 400V, 0/+10V, CSnubber=0/1nF Dynamic test circuit Figure
JUNCTION TEMPERATURE Figure Typical switching energy losses function junction temperature (inductive load, 400V, 0/+10V, CSnubber=0/1nF Dynamic test circuit Figure
VGE, GATE-EMITTER VOLTAGE
VGE, GATE-EMITTER VOLTAGE
120V
480V
120V
480V
10nC
10nC
QGE, GATE CHARGE Figure Typical gate charge 0.8A)
QGE, GATE CHARGE Figure Typical gate charge
Power Semiconductors
Rev.
ILB03N60
R,(K/W) 1.186 1.856 1.458
ZthJCD, TRANSIENT THERMAL IMPEDANCE
ZthJCT, TRANSIENT THERMAL IMPEDANCE
D=0.5
0.0466 2.220*10 3.616*10
D=0.5 0.05 0.02 0.01 single pulse
R,(K/W) 0.907 1.088 3.762 4.043
4.532*10 5.957*10 8.797*10 1.667*10
0.05
0.02 0.01 single pulse
10µs
100µs
10ms
100ms
10µs
100µs
10ms
100ms
PULSE WIDTH Figure IGBT transient thermal impedance function pulse width
PULSE WIDTH Figure Diode transient thermal impedance function pulse width
1.7V 1.6V
IF=4A
FORWARD VOLTAGE
FORWARD CURRENT
1.5V 1.4V 1.3V 1.2V 1.1V 1.0V
IF=2A
150°C 100°C 25°C -55°
IF=1A
IF=0.5A
0.0V
0.5V
1.0V
1.5V
0.9V
-40°
120°
FORWARD VOLTAGE Figure Typical diode forward current function forward voltage
JUNCTION TEMPERATURE Figure Typical diode forward voltage function junction temperature
Power Semiconductors
Rev.
ILB03N60
100pF
Ciss
CAPACITANCE
10pF Coss Crss
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical capacitance function collector-emitter voltage (VGE 1MHz)
Power Semiconductors
Rev.
ILB03N60
td(off) td(on)
igure Definition switching times
r=tS+ =QS+QF Irrm D.U.T (IGBT) D.U.T (Diode)
dIrr Irrm
Figure Definition diodes switching characteristics
Figure Dynamic circuit
Power Semiconductors
Rev.
ILB03N60
TO-263AB (D2Pak)
symbol 9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40 10.80 1.15 6.23 4.60 9.40 16.15 [mm]
dimensions [inch] 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236
2.54 typ. 5.08 typ.
typ. typ.
typ.
0.5906 typ.
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
Power Semiconductors
Rev.
ILB03N60
Published Infineon Technologies Bereich Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 2003 Rights Reserved. Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Representatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Power Semiconductors
Rev.
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