IKW15T120
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IKW15T120
Loss DuoPack IGBT TrenchStop® Fieldstop technology with soft, fast recovery anti-parallel EmCon diode
Approx. 1.0V reduced VCE(sat) 0.5V reduced compared BUP313D Short circuit withstand time 10µs Designed Frequency Converters Uninterrupted Power Supply TrenchStop® Fieldstop technology 1200 applications offers very tight parameter distribution high ruggedness, temperature stable behavior technology offers easy parallel switching capability positive temperature coefficient VCE(sat) Gate Charge Very soft, fast recovery anti-parallel EmCon diode Qualified according JEDEC target applications Pb-free lead plating; RoHS compliant Complete product spectrum PSpice Models http://www.infineon.com/igbt/ 1200V VCE(sat),Tj=25°C 1.7V Tj,max 150°C Marking Code K15T120 Package PG-TO-247-3-21
PG-TO-247-3-21
Type IKW15T120
Maximum Ratings Parameter Collector-emitter voltage collector current 25°C 100°C Pulsed collector current, limited Tjmax Turn safe operating area 1200V, 150°C Diode forward current 25°C 100°C Diode pulsed current, limited Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation 25°C Operating junction temperature Storage temperature
Symbol
Value 1200
Unit
ICpul
IFpul Ptot Tstg -40.+150 -55.+150
15V, 1200V, 150°C
J-STD-020 JESD-022 Allowed number short circuits: <1000; time between short circuits: >1s. Rev.
Power Semiconductors
Soldering temperature, 1.6mm (0.063 in.) from case Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient Electrical Characteristic, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage VCE(sat) Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES Gate-emitter leakage current Transconductance Integrated gate resistor IGES RGint none 1200 Symbol Conditions Value min. typ. max. Unit RthJA RthJCD RthJC Symbol Conditions Max. Value Unit
IKW15T120
Power Semiconductors
Rev.
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured (0.197 in.) from case Short circuit collector current
IKW15T120
Ciss Coss Crss QGate IC(SC)
1100
Switching Characteristic, Inductive Load, Tj=25 Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate fall reverse recovery current during Irrm A/µs td(on) td(off) Eoff Energy losses include "tail" diode reverse recovery. Symbol Conditions Value min. typ. max. Unit
Allowed number short circuits: <1000; time between short circuits: >1s. Leakage inductance Stray capacity dynamic test circuit Figure Rev.
Power Semiconductors
Switching Characteristic, Inductive Load, Tj=150 Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate fall reverse recovery current during Irrm A/µs td(on) td(off) Eoff Energy losses include "tail" diode reverse recovery. Symbol Conditions Value min. typ. max. Unit
IKW15T120
Leakage inductance Stray capacity dynamic test circuit Figure Rev.
Power Semiconductors
IKW15T120
tp=2µs
COLLECTOR CURRENT
COLLECTOR CURRENT
TC=80°C
10µs
TC=110°C
50µs 150µs 500µs 20ms
0,1A 100V
10Hz
100Hz
1kHz
10kHz
100kHz
1000V
SWITCHING FREQUENCY Figure Collector current function switching frequency 150°C, 0.5, 600V, 0/+15V,
VCE, COLLECTOR-EMITTER VOLTAGE Figure Safe operating area 25°C, 150°C;VGE=15V)
100W
COLLECTOR CURRENT
Ptot, POWER DISSIPATION
25°C
50°C
75°C
100°C
125°C
25°C
75°C
125°C
CASE TEMPERATURE Figure Power dissipation function case temperature 150°C)
CASE TEMPERATURE Figure Collector current function case temperature (VGE 15V, 150°C)
Power Semiconductors
Rev.
IKW15T120
VGE=17V
VGE=17V
COLLECTOR CURRENT
COLLECTOR CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical output characteristic 25°C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical output characteristic 150°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50°C
IC=30A
COLLECTOR CURRENT
=150°C 25°C
IC=15A IC=8A IC=5A
50°C
100°C
VGE, GATE-EMITTER VOLTAGE Figure Typical transfer characteristic (VCE=20V)
JUNCTION TEMPERATURE Figure Typical collector-emitter saturation voltage function junction temperature (VGE 15V)
Power Semiconductors
Rev.
IKW15T120
td(off)
td(off)
SWITCHING TIMES
100ns
SWITCHING TIMES
100ns
td(on)
td(on) 10ns
10ns
COLLECTOR CURRENT Figure Typical switching times function collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=56, Dynamic test circuit Figure
GATE RESISTOR Figure Typical switching times function gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit Figure
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
min. -50°C max. typ.
SWITCHING TIMES
100ns td(on)
10ns
50°C
100°C
150°C
50°C
100°C
150°C
JUNCTION TEMPERATURE Figure Typical switching times function junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=56, Dynamic test circuit Figure
JUNCTION TEMPERATURE Figure Gate-emitter threshold voltage function junction temperature 0.6mA)
Power Semiconductors
Rev.
IKW15T120
include losses diode recovery
Etsinclude losses diode recovery
Ets*
SWITCHING ENERGY LOSSES
SWITCHING ENERGY LOSSES
8,0mJ
6,0mJ
Eon*
4,0mJ Ets* 2,0mJ Eoff Eon*
Eoff
0,0mJ
COLLECTOR CURRENT Figure Typical switching energy losses function collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=56, Dynamic test circuit Figure
GATE RESISTOR Figure Typical switching energy losses function gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit Figure
include losses diode recovery
include losses diode recovery
SWITCHING ENERGY LOSSES
SWITCHING ENERGY LOSSES
Ets*
Eoff Eon*
50°C
100°C
150°C
400V
500V
600V
700V
800V
JUNCTION TEMPERATURE Figure Typical switching energy losses function junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=56, Dynamic test circuit Figure
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical switching energy losses function collector emitter voltage (inductive load, TJ=150°C, VGE=0/15V, IC=15A, RG=56, Dynamic test circuit Figure
Power Semiconductors
Rev.
IKW15T120
Ciss
VGE, GATE-EMITTER VOLTAGE
240V
960V
CAPACITANCE
100pF
Coss Crss
50nC
100nC
10pF
QGE, GATE CHARGE Figure Typical gate charge (IC=15
VCE, COLLECTOR-EMITTER VOLTAGE Figure Typical capacitance function collector-emitter voltage (VGE=0V, MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
15µs
IC(sc), short circuit COLLECTOR CURRENT
125A
100A
10µs
VGE, GATE-EMITTETR VOLTAGE Figure Short circuit withstand time function gate-emitter voltage (VCE=600V, start TJ=25°C)
VGE, GATE-EMITTETR VOLTAGE Figure Typical short circuit collector current function gateemitter voltage (VCE 600V, 150°C)
Power Semiconductors
Rev.
IKW15T120
VCE, COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT
600V
600V
400V
400V
200V
200V
0.5us 1.5us
0.5us 1.5us
TIME Figure Typical turn behavior (VGE=0/15V, RG=56, 150°C, Dynamic test circuit Figure
TIME Figure Typical turn behavior (VGE=15/0V, RG=56, 150°C, Dynamic test circuit Figure
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
0.05 0.02 0.01 single pulse
0.05 0.02 0.01
R,(K/W) 0.121 0.372 0.381 0.226
1.73*10-1 2.75*10-2 2.57*10-3 2.71*10-4
R,(K/W) 0.360 0.477 0.434 0.224
7.30*10-2 8.13*10-3 1.09*10-3 1.55*10-4
1/R1
single pulse
10µs
100µs
10ms
100ms
10µs
100µs
10ms
100ms
PULSE WIDTH Figure IGBT transient thermal resistance
PULSE WIDTH Figure Diode transient thermal impedance function pulse width (D=tP/T)
Power Semiconductors
Rev.
IKW15T120
600ns
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
TJ=150°C
500ns 400ns 300ns 200ns 100ns 200A/µs
TJ=25°C
TJ=150°C TJ=25°C
400A/µs 600A/µs 800A/µs
200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE Figure Typical reverse recovery time function diode current slope (VR=600V, IF=15A, Dynamic test circuit Figure
diF/dt, DIODE CURRENT SLOPE Figure Typical reverse recovery charge function diode current slope (VR=600V, IF=15A, Dynamic test circuit Figure
TJ=150°C
dirr/dt, DIODE PEAK RATE FALL REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT
-300A/µs
TJ=25°C
TJ=25°C
TJ=150°C
-200A/µs
-100A/µs
200A/µs
400A/µs
600A/µs
800A/µs
-0A/µs 200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE Figure Typical reverse recovery current function diode current slope (VR=600V, IF=15A, Dynamic test circuit Figure
diF/dt, DIODE CURRENT SLOPE Figure Typical diode peak rate fall reverse recovery current function diode current slope (VR=600V, IF=15A, Dynamic test circuit Figure
Power Semiconductors
Rev.
IKW15T120
TJ=25°C 150°C
2,0V IF=30A 1,5V 1,0V
FORWARD VOLTAGE
FORWARD CURRENT
0,5V
0,0V
-50°C
50°C
100°C
FORWARD VOLTAGE Figure Typical diode forward current function forward voltage
JUNCTION TEMPERATURE Figure Typical diode forward voltage function junction temperature
Power Semiconductors
Rev.
IKW15T120
PG-TO247-3-21
Power Semiconductors
Rev.
IKW15T120
Figure Definition diodes switching characteristics
p(t)
Figure Definition switching times
Figure Thermal equivalent circuit
Figure Definition switching losses
Figure Dynamic test circuit Leakage inductance =180nH Stray capacity =39pF.
Power Semiconductors
Rev.
IKW15T120
Edition 2006-01 Published Infineon Technologies 81726 Germany Infineon Technologies 11/6/06. Rights Reserved. Attention please!
information given this data sheet shall event regarded guarantee conditions characteristics ("Beschaffenheitsgarantie"). With respect examples hints given herein, typical values stated herein and/or information regarding application device, Infineon Technologies hereby disclaims warranties liabilities kind, including without limitation warranties non-infringement intellectual property rights third party.
Information
further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system. Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Power Semiconductors
Rev.
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