| Fulltext Datasheet Results |
1 - 50 of about 94 for I250* |
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First line: Abstract: .. Part No.: JS-A-I25019-TX. Description: Terminal, 2.5mm pitch. A B C D E F G. A B C D E F G. 1. 2. 3. 4. 5. 6. 7. 8 9. 1. 2. 3. 4 .. Tags: JS-A-I25019-TX |
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First line: Abstract: .. Part No.: JS-A-I25019-RA-XX. Description: Wafer, 2.5mm pitch, type I25019, right angle. A B C D E .. Tags: JS-A-I25019-RA-XX |
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First line: TY6-1250A* TY6-I250A triode 3kw TY6-1250A R.F. POWER TRIODE TVZ, l*)CAA Application: R.F. industrial oscillator Power output: continuous rating ^m^irmm Frequency: SOMc/s full ratings Construction: External anode, forced-air cooled This data should read conjunction with GENERAL OPERATIONAL VALVES whi Abstract: .. Page D1 TY6-I250A R.F. POWER TRIODE CLASS «C OSCILLATOR Anode supply from 3-phase rectifier .. TY6-I250A CLASS 'C' OSCILLATOR Anode supply from 3-phase rectifier without smoothing filter .. Tags: TY6-1250A triode 3kw TY6-I250A TY6-1250A* datasheet abstract.. |
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First line: fuse t6.3a fuse abb mtbf t6.3a P4-I25002 150-500 Watts Series Abstract: .. Mating Connectors J2 : WST P4-I25002 housing WST I25002BS contacts. Notes. 1.41 36.0 2.08 .. Tags: P4-I25002 t6.3a fuse t6.3a fuse abb mtbf datasheet abstract.. |
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First line: 4624 Beam Power Tube FORCED-AIR COOLED GRID-DRIVE OPERATION INTEGRAL RADIATOR WATTS OUTPUT MATRIX-TYPE CATHODE WATTS OUTPUT DISTRIBUTED AMPLIFIER SERVICE ForUseas Power Ampl Sing]e-Sideband Suppressed-Carrier Service Broadband Amplifier Mobile Stationary Equipment. Electrical: Unipotential Cathode, Abstract: .. '— -— Z 4 RECESSES W I PIN HEATER V FLANGE HOLE CIRCLE 92CS-I2502 DIMENSIONS IN INCHES 2 .. TUNING CHARACTERISTICS 700 800 900 1000 MOO FREQUENCY —Mc 92CS-I250I j^fe RADIO CORPORATION .. Tags: a2733 MU 0850 datasheet abstract.. |
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First line: E9702* VICOR CONFIDENTIAL THIS DOCUMENT DATA DISCLOSED HEREIN HEREWITH REPRODUCED, USED, DISCLOSED WHOLE PART ANYONE WITHOUT PERMISSION VICOR CORP. DESCRIPTION DATE APPROVED REV. P.M. RELEASED #1607 D.Z. 6/9/89 6/10/91 BJR. REVISED E910164 REVISED E930005 REVISED E931325 REVISED E940748 REVISED E970 Abstract: .. I250. 20I. F. R. R. R. R. F. ̊CJT. SEE FIGURE #1. VLI. t = MEASURMENT = 10uS. 20us. t. SCOPE V + 800V. F. LOGIC GND. R LOAD .. Tags: E9702* vicor E910164 E930005 E931325 E940748 E970236 |
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First line: SC0512 POWER SOURCE Super-small, high efficiency SINGLE-OUTPUT OBR-S SERIES DUAL-OUTPUT OBR-WC SERIES Single, DC18-72V Wiirrarftj years (DC5V 29x46x10 +OBR-W005 (DC5V 29*46-. Abstract: .. functions Output voltaje trimming range i250mV i250mV -350mV i-6S0mV -2S0mV 900mV -1.6V -♦V .. Tags: SC0512 datasheet abstract.. |
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First line: rf module 315-434 mhz from rohs LCD 640 x 480 MODULE ISO 9141 GSM transmitter receiver 196-Pin* QUARTER 2003 SG1013/D WWW.MOTOROLA.COM/SEMICONDUCTORS About This Revision-Q4/2003 Abstract: .. I250/D I250CHIP/D. i.300 3G Innovative Convergence i.300 Platform Comprehensive silicon .. Tags: 196-Pin* GSM transmitter receiver ISO 9141 LCD 640 x 480 MODULE rf module 315-434 mhz from rohs motorola camera immobilizer dragonball SG1013 |
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First line: power control. Peak OlT-statc voltage ON-stutc current: 0.8A. 70-92 package. _DTA08E Silicon Planar Type 0.8A Bidirectional Thyristor Abstract: .. W Averaga Gaie Power Dissipation / / Ifc* 1 // 0.1 W Peak Gate Current / / 'GM I250H*. 0uty £lO% ±1 .. Tags: datasheet abstract.. |
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First line: MOSFET ELM34400AA-N ELM34400AA-N Vds=30V Id=10A Rds(on) 12.5mQ (Vgs=10V) Rds(on) 20mQ (Vgs=4.5V) y-^tff Abstract: .. ,i2501.l. A 40. \ .. .. > I. .. 20. .. _ T. f'. 0.10 1.00 Time sec 10 .. Tags: datasheet abstract.. |
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First line: OVEN CONTROLLED CRYSTAL OSCILLATOR OCXO 2060 Abstract: .. I250. -40 to +85° C ± 250 ppb. Pin Configuration. Pin Option V Option N. 1 Control Voltage No .. Tags: datasheet abstract.. |
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First line: OVEN CONTROLLED CRYSTAL OSCILLATOR OCXO-2060 Compact package Stratum requirements Wide frequency range Custom Options available Abstract: .. I250. -40 to +85° C ± 250 ppb. Variant Option Codes Parameters H S. Frequency Range: 2.5 MHz – 120 MHz .. Tags: OCXO-2060 |
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First line: 456kHz ta8691n TA8691N* TDA3586 TDA3586* SERIES CERAMIC RESONATOR 190-1250KHZ TECHNICAL CHARACTERISTICS Part Number mmme. Frequency Accuracy mmvm Pesonant Impedance( ;mi(Sil3!'li Stability Temperature )(%) Aging years(%) Load Capacitance CpF) lKHz lKHz ZTB375-429P Abstract: .. -374D ZTB375-429P ZTB430-509E ZTB510-699P ZTB700-999J ZTBIOOo-I250J ~20 ~20. -2Q-+80'C .. Tags: TDA3586* TDA3586 TA8691N* ta8691n 456kHz datasheet abstract.. |
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First line: DCR804 MARCONI TECHNOLOGY 57034*42 0GG173S High Power Button Capsule Thyristor DCR803 Series DCR804 Series IT(AV) 900A VRRM 1700V Tvpe Number DCR803SM1818 DCR804SM1818 1800 1700 DCR803SM1717 DCR804SM1717 1700 1600 DCR803SM1616 DCR804SM1616 1600 1500 Abstract: .. I I250A/ II! I' 1/ // 14r 500A I , t.· . .. ~ w : 1500 rJl 10 w Z > w .. -j .. ,oi// , IZ/ I YfL I250A II!· / / . ~ _. __ _.. __ 600:= 5t-------f_~=_-=-~=__..:._===__=_ .. Tags: DCR804 datasheet abstract.. |
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First line: 9003 SUPER-CONTROL AMPLIFIER PENTODE MIDGET TYPE Heater Coated Unipotential Cathode Voltage volts Current 0.15 amp. Direct Interelectrode Capacitances; Grid Plate 0.01 max. Input Output Abstract: .. I2500 w 10. 5. o. :; « .J .J. ~2000:' 8. ~ f-U. « Z. Z. '" ~ Z. w W. ::> a: u. 01500'" 6. U Z. o III. o. a: « a: W. f- 1000:;: 4. - .. Tags: datasheet abstract.. |
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First line: SILICON HIGH VOLTAGE RECTIFYING DIODES ED-r 75kV, 100kVJ25kVJ50kV 100mA WJIL ORIGIN ELECTRIC SfiE fifflSJi^Efl^, >'<? Abstract: .. r--I250. 100. · *m~ Outline. ¥'fit : mm ~ is. -t;:1; L mm 1I!.C g 120 145 175 200 80 95 115 130. ED .. Tags: datasheet abstract.. |
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First line: SUPER-CONTROL AMPLIFIER PENTODE ACORN TYPE Especially wavelengths short meter_ Heater Coated Un!potential Cathode Voltage Current 0.15 Direct Interelectrode Capacitances: Grid Plate* nput Output Overall Length Overall Diameter Bulb Abstract: .. <11 o I2500. 5 EO. o. ::; a.. '" w ~ 10. « ..J ..J. ::; ",2000 _ 8 N. ::; w u Z fU. U. « ::> u 01500<116 Z U. IX: W. w. z. o. o .. Tags: datasheet abstract.. |
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First line: SHINDENGEN ELECTRIC 0211307 100W T10Mfi Ratings Outline Dimensions 1Q.5-1 2.5- Abstract: .. -:0---1,J:5:-0--~20::-0---:-:I250V. ~-~-~~--~~~4~~-f~~, ".ill -;on d't' I Ion: Single .. Tags: datasheet abstract.. |
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First line: Quarter 2004 SG1013Q42004 About This Revision-Q4/2004 When products introduced, summary products will provided this section. However, Product section will only appear this page when products have been introduced during quarter. addition, change appears left margin every page this selector guide that Abstract: .. I250, BR1904, i2xxPB. i.250-21 2.5G Innovative ConvergenceTM i.250-21 Platform The i.250 .. BR1904, i250-21, i2xxPB, i250-21FS. i.300-20 3G Innovative ConvergenceTM i.300-20 .. Tags: uhf fsk modem SH67P33 MC13192FCR2 mc131* i-300 gsm modem datasheet "RF Transceivers" SG1013Q42004 |
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First line: Cellular Applications Overview Freescale Semiconductor's i.250-20 Innovative Convergence platform comprehensive, silicon-to-software solution 2.5G technology, designed enable rapid time-to-market with smart, GSM/ GPRS wireless products such Smartphones feature phones. Building success industryleadin Abstract: .. www.freescale.com/i250. i.250-21 > Supports GSM850/GSM900/DCS/PCS quad-band operation .. www.freescale.com/i250. Because of an order from the United States International Trade .. Tags: yamaha ic YAMAHA ADVANCED SEMICONDUCTOR "Camera processor" datasheet abstract.. |
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First line: (Ta=25'C) Idss Id(on) Igss Vds= (max) Ds(on) (min) (*typ) (max) (pF) Coss (*typ) (max) (pF) Irss (*typ) (max) (pF) Vgs=0 (nA) (ma) 0.25 0.80 1600 TO-213AA 1RFJ343 0.25 0.80 _6.2 1600 TO-213AA IRFJ420 0.25 TO-213AA IRFJ421 0.25 TO-213AA Abstract: .. * 25 TO-254AA IRFM250 IR N 200 ±20 24 125 ±100 ±20 i250^ 200 2.0 4.0 0. 25 0. 10 10 16 10 16 2400* 800 .. Tags: datasheet abstract.. |
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First line: 2SC5085 TRANSISTOR SILICON EPITAXIAL PLANAR TYPE VHF-UHF BAND NOISE AMPLIFIER APPLICATIONS Noise Figure, High Gain. NF=l.ldB, |S2le|2 lldB (f=lGHz) MAXIMUM RATINGS MARKING Abstract: .. Sue VCE = 10V IC = 5mA Ta = 25°C UNIT : Ù S21e VCE = 10V IC = 5mA Ta = 25°C Ì250 J250 ± 180' -150' Sl2e VCE .. Ta = 25°C UNIT : Ù Ì250 0.4 1 x'^y-j25o f=0.2GHz^ 7 J 4 2001-05-31 TOSHIBA 2SC5085 Sue VCE = 10V IC .. Tags: datasheet abstract.. |
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First line: 2SC5086 TRANSISTOR SILICON EPITAXIAL PLANAR TYPE VHF-UHF BAND NOISE AMPLIFIER APPLICATIONS Noise Figure, High Gain. NF=l.ldB, |S2le|2 lldB (f=lGHz) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO Abstract: .. Sue VCE = 10V IC = 5mA Ta = 25°C UNIT : Ù S21e VCE = 10V IC = 5mA Ta = 25°C Ì250 J250 ± 180' -150' Sl2e VCE .. = 25°C ±180' -150 S22e VCE = 10V IC = 5mA Ta = 25°C UNIT : Ù Ì250 2-0?SC0.4ff^;2G-7-j250 4 2001-05 .. Tags: datasheet abstract.. |
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First line: TOPAZ J^GflSSab GOOIGSO T-29-25 SD15005 SD1501 N-CHANNEL ENHANCEMENT-MODE D-MOS SWITCHES TO-92 Plastic Package SD1500BD SD1501BD Sorted Chips Waffle Pack SD1500CHP SD1501CHP SOT-89 Surface Mount Pkg. SD1500CY SD1501CY Description 600V,60ohm 550V, 60ohm Abstract: .. T.= i2500 o o 4 6 8 10 12 V - Gate-So<m:e Voltage Vo1Is .. o o / 25 50 75 100 I. - Drain .. Tags: datasheet abstract.. |
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First line: "Improved Replacement" BURR-BROV^i OPA21 AVAILABLE FORM Low-Power Precision OPERATIONAL AMPLIFIER SUPPLY CURRENT 23QuA WIDE SUPPLY RANGE Abstract: .. 0> O 40: 20 0 -5 5 °c| â– H I250I s s. V s. s s. s. s. s \ 0.010.1 1 10 100 ik 10k 100k 1N Frequency Hz .. Tags: "Improved Replacement" datasheet abstract.. |
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First line: RK-20A WLtmTE PHONG nrmrar RAVTHtUN Abstract: .. Ef-7.5vfÃC Ep = I250v OC eci-3oo" pc Ec3 - +45 * PC Er, = -100" PC 1000 1100 1200 1300 M 2 3 4 5 6 7 8 S .. Tags: datasheet abstract.. |
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First line: bbS35 AMER PHILIPS/DISCRETE bb53131 018751 BUS23 SERIES T--23-I6" SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, giass-passivated power transistors aTO-3 envelope, intended converters, inverters, switching regulators, motor control systems etc. Abstract: .. VCC=i250V V|M = -6to + 8V *P Y = 0,01 tp = 20 ¡is The values of Rg and RL are selected in accordance .. Tags: bbS35 datasheet abstract.. |
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First line: DESCRIPTION AA1L4L designed medium speed switching circuit. FEATURE Bias resistors built-in type transistor equivalent circuit. Maximum Temperatures Abstract: .. i250 'iii en ~ o. b 300. 0200 CD. ~ 150. '" 25. c: E 40 I. ~ ~ U. C ~ 30 :::I ~ V ,~~ VI. 1/ 1,..-. I-- ~ r-- -~ -~ L. .. Tags: datasheet abstract.. |
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First line: KBJ401G THRU KBJ410G CLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIERS Plastic Package Underwriters Laboratory Flammability Classification 94V-0 Ideal printed circuit boards *K3lass passivated chip junction High Surge Current Capability High temperature Soldering Guaranteed Seconds,0.375(9.5mm) lead l Abstract: .. a:i250. ~ a: u.. 3.0. ~2oo C!l. ::::> 8.3ms Singde Sine-Wase JEDEC Method < a: w > < w C!l. 2.0 1.0 .. Tags: datasheet abstract.. |
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First line: 7616 rom 2716 HM 1211 _yi.siyy SEMICONDUCTOR PRODUCTS DIVISION DIVISION HARRIS CORPORATION M-7616 PROM 80ns MAXIMUM ADDRESS ACCESS TIME "THREE STATE" OUTPUTS CHIP ENABLE INPUT SIMPLE HIGH SPEED PROGRAMMING PROCEDURE PULSE/BIT Abstract: .. -7616-5 5V -5% 0 °C to +75 °C HM-7616-2 5V ±10% -550C to +I250C SYMBOL PARAMETER MIN TYP MAX MIN .. Tags: HM 1211 rom 2716Â 7616Â datasheet abstract.. |
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First line: FO-2847 DOCUMENT CANGED CECK 2449 2MAR00 ABSOLUTE MAXIMUM CARACTERISTICS Abstract: .. B MAX B LIMITS FOR LINEAR +B MAX OPERATION B : O. TA : 2~C TO 12~C Vnul I DRIFT B : O. TA : +I250C TO + I 50 .. Tags: datasheet abstract.. |
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First line: MRD810 (Silicon) SILICON PHOTO TRANSISTOR designed application card tape readers, optical character recognition, shaft encoders, industrial inspection, processing control, switching logic circuits design requiring radiation sensitivity, stable characteristics. Popular TO-18 Type Package Easy Handlin Abstract: .. Emitter-Collector Voltage Total Device Dissipation@TA::I250C. Po TJ.Tstg. Derate above 25°C .. Tags: datasheet abstract.. |
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First line: smd L21 DEVICES INCORPORATED L21C11 8-bit Variable Length Shift Register Variable Length 8-bit Wide Shift Register Selectable Delay Length from Stages Power CMOS Technology Replaces TRW/Raytheon TMC2111 Load, Shift, Hold Instructions Separate Data Data Pins DECC 5962-96793 Abstract: .. L21C11CM30 L21C11CM25 L21C11CM20 -5Ì*Q\O+Ì250t — MIL-STD-883 ©mpliant 30 ns 25 ns 20 ns .. Tags: smd L21 datasheet abstract.. |
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First line: Raytheon Signetics DG508 connection diagram HI-509A BURN-IN CIRCUITS HI-200 TO-100 h-w^ NOTES: IN4002 Freq: lOOKHz HI-201 Abstract: .. C 0.03 0.03 nA Full +50 Ì50 nA *'D 0FFI' "" Output Leakage Current +25°C 1.0 1.0 nA Full +250 Ì250 .. 0" Channel Leakage Current +25°C 0.1 0.1 nA Full Î250 Ì250 nA DIGITAL INPUT CHARACTERISTICS .. Tags: HI-509A DG508 connection diagram Raytheon Signetics datasheet abstract.. |
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First line: INVERTER Vout CHRRBCTERISTICS UPD7B07SGF M-81 Vout INVERTER GflIN/PHRSE FREQUENCY CHRRRCTERISTICS UPD7807SGF M-fll Gain CdB] 52.9 [MHz] 123.4 Cdeg] CdB] Phue Map] dependence oscillating characteristics UPD78075GF Room Temp. FCR4.0MC5 (item a~e) Abstract: .. 5 d. Tr f se [uSJ 1000 I750 I500 I250 I0 e. Duty [Y.J 60 55 I50 45 40 f. Vstart [VJ 3. - .2 .2 .2 .. .2 .3 .. Tags: datasheet abstract.. |
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First line: Handhelds GSM/GPRS HANDSET USING i.250 PLATFORM Abstract: .. i250-21 2.5G Innovative Convergence i.250-21 Platform: The i.250-21 platform for GSM and .. Tags: datasheet abstract.. |
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First line: RK-31* 80 watts power amplifier RK-31 RYTHEON MTEUR TUBES RK-31 TRIODE POWER MPLIFIER OSCILLTOR RK-31 high-mu triode power amplifier tube having thori-ated tungsten filament, molybdenum plate isolantite base. designed power amplifier, oscillator frequency BOTTOM VIEW SOCK multiplier. FILMENT RTING F Abstract: .. A-F POWER AMPLIFIER-CLASS B TWO TUBES Ef-7.S*fiC EP=I250* PC tra = o Rl - 18000s- PLHTE T0PLÑTE .. Tags: 80 watts power amplifier RK-31* datasheet abstract.. |
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First line: Standard Power MOSFETs-- RFK30N12, RFK30N15 Fite Number 1455 Power Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors rDs(on)=0.075 Features: power-dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance Majority carrier de Abstract: .. typ 450 300 lyp 450 i250 typ 375 250 typ 375 Vas=10 V RFK30N12, ~FK30N15 Series 0.83 0.83 .. Tags: datasheet abstract.. |
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First line: BA1F4N BA1F4N designed medium speed switching circuit. Bias resistors built-in type transistor equivalent circuit. Abstract: .. i250 <1'1. 6. .. 200 150. a.. ~ .. I .. a.. ~ 100 o 50. '" 25. I .. c: 40. If. l-- ~ u. ~ 30 20. iV L"'1/ 1/ -. r-r .. Tags: datasheet abstract.. |
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First line: International Rectifier PD-9.506B IRFBC40 Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease Paralleling Simple Drive Requirements Abstract: .. f i250C /. / Yos. ~ lOay 10. 20us PULSE WIDTH. o. jJ VGS = lOV 0.0 -60 -40 -20. o. z. 0.5. ..-- V. VGS, Gate .. Tags: datasheet abstract.. |
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First line: 3875081 solid state DeT| 3fi7SDfil DDlflMDD File Number 1590 Power Field-Effect Transistors 18400 r'-jy-/3 Standard Power MOSFETs 2N6764 N-Channel Enhancement-Mode Power Field-Effect Transistors 38A, rDs(on) 0.055 Abstract: .. Iq - 20A, Tc I250C VGS v tov. Iq • 24A, Tc 125 °C ®f » forward Tranicanductiftc* 7 ALL 90' 17 .. Tags: S-INI114 S-INI114* datasheet abstract.. |
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First line: chemcon dc motor speed control tl494 DC/DC tl494 application power supply control mic power switch tl494 tl494 application notes motor control MIC4420/4429 MIC4420, MIC4429 MIC429 MOSFET drivers tough, efficient, easy use. MIC4429 MIC429 inverting drivers, while MIC4420 non-inverting driver. They c Abstract: .. I2500PF. INPUT. 90%~~IIIIIIIIIIIIIIII~~:;~~~__ 10% OV. 5V. INPUT. 90%~~IIIIIIIIIIIIIIII .. Tags: tl494 application notes motor control power switch tl494 DC/DC tl494 application power supply control mic dc motor speed control tl494 chemcon datasheet abstract.. |
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First line: lmsp* LMSP33QA-321 LMSP33QA* SWITCHPLEXER LMSP33QA-321* Document Number: AN2956 Rev. 1.0, 04/2005 MMM6035 Integrated Power Controller Features Vanhuffel, Hue, Grange, Shepherd, Trichet Abstract: .. is selected as a Front End Module FEM power amplifier solution inside i250-22 platform. The .. i250-22 Circuit Board. Figure 6. Zoomed in View of FEM PA. MMM6035. MMM6035 PA Module. Murata .. Tags: lmsp* SWITCHPLEXER smiq LMSP33QA-321* LMSP33QA* ANALOGIC 209V MMM6035 |
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First line: 2SC5093 TRANSISTOR SILICON EPITAXIAL PLANAR TYPE VHF-UHF BAND NOISE AMPLIFIER APPLICATIONS Noise Figure, High Gain. NF=1.8dB, |S2le|2 9.5dB (f=2GHz) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO Abstract: .. ' 270° Sl2e VCE = 8V IC = 5mA Ta = 25°C 180° 0.20 210 S22e VCE = 8V IC = 5mA Ta = 25°C Unit : Ú Í250 270° '1 .. ° Sl2e VCE = 8V IC = 20mA Ta = 25°C 180° 0.20 210 270° S22e VCE = 8V IC = 20mA Ta = 25°C Unit : Ú Í250 j250 .. Tags: datasheet abstract.. |
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First line: GaAs wafer GaAs wafer dicing Chip free Stealth Dicing Technical Information MEMS Introduction Problems with dicing MEMS fabrication processes Grinding wheel type blade dicing Making dicing completely process Abstract: .. , 3990711, 4050534 a total of 35 patents , and 126 patents pending Taiwan: Patent Nos. I250060 .. Tags: GaAs wafer dicing Chip free GaAs wafer datasheet abstract.. |
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First line: 3050v 5R4WGA 5R4WGA* TENTATIVE DATA 5R4WGA TUNOSOL FULL WAVE RECTIFIER MAX. Abstract: .. 500 -'---r- <:> -r-r-c-f--r--I250 -'---r-r-r-'-f--r--f00 -'---r-r-r-. .. r-.. 900 .. Tags: 5R4WGA* 5R4WGA 3050v datasheet abstract.. |
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First line: 6HB6 9-64 6HB6 BEAM PENTODE VERTICAL-DEFLECTION AMPLIFIER APPLICATIONS DESCRIPTION RATING---------- 6HB6 beam pentode designed vertical-deflection amplifier television receivers. also useful video amplifier applications. Abstract: .. 1--- I-- I250. 40 -~ >-. '" !;,,.2. @ Eez r-~3'£'2·..vOL TS. I. 30. -- -,- .- .. "" 300 I N VOLTS. zoo. z w .. Tags: datasheet abstract.. |
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First line: tubes 12AU7 12AU7 6AU7* TENTATIVE DATA 6AU7 MAX. ^TTT TUNG-SOL twin triode MINIATURE TYPE COATED POTENTIAL CATHODE HEATER Abstract: .. > .i250' --- 1000 .. :z: => c Iz: ~ .. o:: I-. -. l - I-. -. ~ 5. 10. 15. 20. 0. -. I-. PLATE MILLIAMPERES. I I I I I. I J .. Tags: 6AU7* 12AU7 tubes 12AU7 datasheet abstract.. |
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First line: 6FJ7 tfedfr*1* DISSIMILAR DOUBLE TRIODE TUBES VERTICAL-DEFLECTION OSCILLATOR AMPLIFIER APPLICATIONS 6FJ7 ET-T1647 11-60 DESCRIPTION RATING Abstract: .. ::::.-I250. 100:::::::. 150~ ~200::: 5000 ~ RPI-- « u / z. = Eb = 300 VOL TS. IP 10 20 30 40 50 60 .. Tags: datasheet abstract.. |
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First line: 450V, Fast Switching, Silicon Mesa 2N6249 2N6250 2N6251 Collector-Base Voltage: 450V Peak Collector Current: Saturation Voltage Maximum Safe Area Operation Abstract: .. t 2~W9L 2~i250. ,..,~ 2 I. ~ UI. 1[1. IL. u u 0. .. 0. '" ..J ..J. 0.4 0.2. Ii r-. rt' /11 , " " ~ a > z 0. ,0.5. 55.lC. t .. Tags: s 2 umi 1A 250V D-312 datasheet abstract.. |
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