HMC451LP3

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HMC451LP3 - HMC451LP3

HMC451LP3 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
HMC451LP3(E) ideal for: Microwave Radio VSAT
Features
Gain: Saturated Power: Output IP3: Single Supply: Matched Input/Output Lead 3x3mm Package: 9mm2
LINEAR POWER AMPLIFIERS
Military Space Test Equipment Sensors Fiber Optics Driver Mixers
Functional Diagram
General Description
HMC451LP3(E) efficient GaAs PHEMT MMIC Medium Power Amplifier housed leadless RoHS compliant package. Operating between GHz, amplifier provides gain, saturated power from single supply. This matched amplifier does require external components I/O's blocked, making ideal linear gain block driver mixers. HMC451LP3(E) eliminates need wire bonding, allows surface mount manufacturing techniques.
Electrical Specifi cations, +25° Vdd1 Vdd2
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 16.5 Min. Typ. 0.02 19.5 0.03 12.5 Max. Min. Typ. 0.02 0.03 Max. Units
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC451LP3 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Broadband Gain Return Loss
Gain Temperature
RESPONSE (dB) GAIN (dB)
LINEAR POWER AMPLIFIERS
+25C +85C -40C
FREQUENCY (GHz) FREQUENCY (GHz)
Input Return Loss Temperature
+25C +85C -40C
Output Return Loss Temperature
RETURN LOSS (dB)
RETURN LOSS (dB)
+25C +85C -40C
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB Temperature
P1dB (dBm) FREQUENCY (GHz)
+25C +85C -40C
Psat Temperature
Psat (dBm) FREQUENCY (GHz)
+25C +85C -40C
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
v00.0808
HMC451LP3 451LP3E
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Power Compression
Pout (dBm), GAIN (dB),
Power Compression
Pout (dBm), GAIN (dB),
LINEAR POWER AMPLIFIERS
Pout (dBm) Gain (dB)
Pout (dBm) Gain (dB)
INPUT POWER (dBm)
INPUT POWER (dBm)
Output Temperature
(dBm) FREQUENCY (GHz)
Noise Figure Temperature
NOISE FIGURE (dB)
+25C +85C -40C
+25C +85C -40C
FREQUENCY (GHz)
Gain, P1dB PSAT Supply Voltage
GAIN (dB), P1dB (dBm), Psat (dBm)
Gain P1dB Psat
Reverse Isolation Temperature
ISOLATION (dB)
+25C +85C -40C
FREQUENCY (GHz)
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC451LP3 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1 Vdd2) Input Power (RFIN)(Vdd +5Vdc) Channel Temperature Continuous Pdiss (derate 12.8 mW/°C above Thermal Resistance (channel ground paddle) Storage Temperature Operating Temperature +5.5V 0.83 °C/W +150
Typical Supply Current Vdd1 Vdd2
Vdd1 Vdd2 +4.5 +5.0 +5.5 Idd1 Idd2 (mA)
Note: Amplifier will operate over full voltage range shown above
LINEAR POWER AMPLIFIERS
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES: LEADFRAME MATERIAL: COPPER ALLOY DIMENSIONS INCHES [MILLIMETERS] LEAD SPACING TOLERANCE NON-CUMULATIVE BURR LENGTH SHALL 0.15mm MAXIMUM. BURR HEIGHT SHALL 0.05mm MAXIMUM. PACKAGE WARP SHALL EXCEED 0.05mm. GROUND LEADS GROUND PADDLE MUST SOLDERED GROUND. REFER HITTITE APPLICATION NOTE SUGGESTED LAND PATTERN.
Package Information
Part Number HMC451LP3 HMC451LP3E Package Body Material Stress Injection Molded Plastic RoHS-compliant Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Rating MSL1 MSL1
Package Marking XXXX XXXX
peak reflow temperature peak reflow temperature 4-Digit number XXXX
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC451LP3 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Descriptions
Number Function RFIN RFOUT Description This connected RF/DC ground. Performance will affected. This coupled matched Ohms. This coupled matched Ohms. Interface Schematic
LINEAR POWER AMPLIFIERS
Vdd2
Power Supply Voltage amplifier. External bypass capacitors 1,000 required.
Vdd1
Power Supply Voltage amplifier. External bypass capacitors 1,000 required.
Package bottom must connected RF/DC ground.
Application Circuit
Component Value 1,000
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com
HMC451LP3 451LP3E
v00.0808
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER,
Evaluation
LINEAR POWER AMPLIFIERS
List Materials Evaluation 120202
Item Description Mount Connector Capacitor, 0402 Pkg. 1000 Capacitor, 0603 Pkg. Capacitor, Tantalum HMC451LP3(E) Amplifier 120201 Evaluation
Reference this number when ordering complete evaluation Circuit Board Material: Arlon 25FR
circuit board used final application should circuit design techniques. Signal lines should have impedance while package ground leads exposed paddle should connected directly ground plane similar that shown. sufficient number holes should used connect bottom ground planes. evaluation board should mounted appropriate heat sink. evaluation circuit board shown available from Hittite upon request.
price, delivery, place orders, please contact Hittite Microwave Corporation: Alpha Road, Chelmsford, 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line www.hittite.com

HMC451LP3

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