HM514400BS BLS HM511000
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HM511000* - HM511000*
30-pin 9-bit ram module - 30-pin 9-bit ram module
HM514400BS - HM514400BS
HM511000 - HM511000
HB56G19A/B Series
1,048,576-word 9-bit High Density Dynamic Module HB56G19 dynamic module, mounted 4-Mbit DRAM (HM514400BS/BLS) sealed package Mbit DRAM (HM511000 AJP/ALJP) sealed package. outline HB56G19 30pin single in-line package. Therefore, HB56G19 makes high density mounting possible without surface mount technology. HB56G19 provides common data inputs outputs also provides separate parity parity check. module board decoupling capacitors beneath each SOJ.
Maintenance only
Access Type time Package HB56G19A-7B/7BL 30-pin profile HB56G19A-8B/8BL lead type HB56G19B-7B/7BL 30-pin socket type HB56G19B-8B/8BL
Features
30-pin single in-line package Lead pitch 2.54 Single 10%) supply High speed Access time ns/80 (max) power dissipation Active mode 1.54 W/1.38 (max) Standby mode (max) (max) (L-version) Fast page mode capability Refresh cycle 1,024 refresh cycle/16 1,024 refresh cycle/128 (L-version) variations refresh RAS-only refresh CAS-before-RAS refresh compatible
Note: This device available application.
HB56G19A/B Series
Arrangement
HB56G19A/B Series
name name PCAS
Description
name Function A0-A9 Address input A0-A9 Refresh address input address strobe CAS, PCAS Column address strobe Read/write enable DQ0-DQ7 Data-in/Data-out Parity data-in Parity data-out Power supply Ground connection
HB56G19A/B Series
Block Diagram
(11) (12) (14) (15) (17) (18) (27) (21) PCAS (28) (30) (22) Dout (26) (29) (16) (20) (23) (25) (10) (13)
HB56G19A/B Series
HM514400BS/BLS
HM514400BS/BLS
HM511000AJP/ALJP
HB56G19A/B Series
Absolute Maximum Ratings
HB56G19A/B Series
Parameter Symbol Value Unit Voltage relative -1.0 +7.0 Supply voltage relative -1.0 +7.0 Short circuit output current Iout Power dissipation Operating temperature Topr Storage temperature Tstg +125
Recommended Operating Conditions +70°C)
Parameter Symbol Unit Note Supply voltage Input high voltage Input voltage -1.0 Note voltage referred
HB56G19A/B Series
HB56G19A/B Series
Characteristics +70°C, 10%,
HB56G19A/B -7B/7BL -8B/8BL Parameter Symbol Unit Test condition Notes Operating current ICC1 interface Standby current ICC2 RAS, Dout High-Z CMOS interface RAS, 0.2V Dout High-Z Standby current CMOS interface (L-version) RAS, Address Dout High-Z RAS-only ICC3 refresh current VIH, Standby current ICC5 Dout enable CAS-before-RAS ICC6 refresh current Fast Page mode ICC7 current =125µs Battery back ICC10 Operating current tRAS (Standby with VIH, refresh) Address (L-version) Dout High-Z Input leakage current Vout Output leakage current Dout disable Iout Output high voltage Iout Output voltage Notes: depends output load condition when device selected, specified output open condition. Address changed once less while VIL. Address changed once less while VIH.
HB56G19A/B Series
Capacitance 25°C, 10%)
HB56G19A/B Series
Parameter Symbol Unit Note Input capacitance (Address) Input capacitance (Clock) Input/output capacitance (DQ0-DQ7) CI/O Input capacitance (PD) Output capacitance (PQ) Notes Capacitance measured with Boonton Meter effective capacitance measuring method. disable Dout.
Characteristics +70°C, 10%,
Read, Write Refresh Cycle (Common parameters)
HB56G19A/B -7B/7BL -8B/8BL Parameter Symbol Unit Notes Ramdom read write cycle time precharge time pulse width tRAS 10000 10000 pulse width tCAS 10000 10000 address setup time tASR address hold time tRAH Column address setup time tASC Column address hold time tCAH delay time tRCD column address delay time tRAD hold time tRSH hold time tCSH precharge time tCRP Transition time (rise fall)
HB56G19A/B Series
Read, Write Refresh Cycle (Common parameters)(cont)
HB56G19A/B Series
HB56G19A/B -7B/7BL -8B/8BL Parameter Symbol Unit Notes Refresh period tREF Refresh period (L-version) tREF
Read Cycle
HB56G19A/B -7B/7BL -8B/8BL Parameter Symbol Unit Notes Access time from tRAC Access time from tCAC Access time from address Read command setup time tRCS Read command hold time tRCH Read command hold time tRRH Column address lead time tRAL Output buffer turn-off time tOFF
Write Cycle
HB56G19A/B -7B/7BL -8B/8BL Parameter Symbol Unit Notes Write command setup time tWCS Write command hold time tWCH Write command pulse width Data-in setup time Data-in hold time
HB56G19A/B Series
Refresh Cycle
HB56G19A/B Series
HB56G19A/B -7B/7BL -8B/8BL Parameter Symbol Unit Notes setup time tCSR (CAS-before-RAS refresh cycle) hold time tCHR (CAS-before-RAS refresh cycle) precharge hold time tRPC
Fast Page Mode Cycle
HB56G19A/B -7B/7BL -8B/8BL Parameter Symbol Unit Notes Fast page mode cycle time Fast page mode precharge time Fast page mode pulse width tRASC 100000 100000 Access time from precharge tACP hold time from tRHCP precharge Notes: measurements assume Assumes that tRCD tRCD (max) tRAD tRAD (max). tRCD tRAD greater than maximum recommended value shown this table, tRAC exceeds value shown. Measured with load circuit equivalent loads Assumes that tRCD tRCD (max), tRAD tRAD (max). Assumes that tRCD tRCD (max), tRAD tRAD (max). tOFF (max) defined time which output achieves open circuit condition referenced output voltage levels. (min) (max) reference levels measuring timing input signals. Also, transition times measured between VIL. Operation with tRCD (max) limit insures that tRAC (max) met, tRCD (max) specified reference point only, tRCD greater than specified tRCD (max) limit, then access time controlled exclusively tCAC. Operation with tRAD (max) limit insures that tRAC (max) met, tRAD (max) specified reference point only, tRAD greater than specified tRAD (max) limit, then access time controlled exclusively tAA. Early write cycle only (tWCS tWCS (min)).
HB56G19A/B Series
HB56G19A/B Series
These parameters referenced leading edge early write cycle. initial pause required after power followed minimum eight initialization cycles (RAS-only refresh cycle CAS-before-RAS refresh cycle). internal refresh counter used, minimum eight CAS-before-RAS refresh cycle required. tRASC determined pulse width fast page mode cycles. Access time determined longer tCAC tACP. tREF determined 1,024 refresh cycles.
Timing Waveforms
Refer HM514400B data sheet. HB56G19 writes data only early write cycle (tWCS tWCS (min)). Delayed write cycle available. fixed VSS).
HB56G19A/B Series
Physical Outline
HB56G19A/B Series
Unit mm/inch
HB56G19A series 78.74 3.100
5.28 0.208
12.70 0.500 2.54 0.100 0.50 0.197
1.27 0.050
Unit mm/inch HB56G19B series
88.90 3.500 82.14 3.234 5.28 0.208
3.175 0.125
12.70 0.500 10.16 0.400 6.35 0.250
2.54 0.100 1.78 0.070 73.66 2.900
2.54 0.100 1.27 0.050
2.03 0.080 7.62 0.300
Detail
0.25 0.010
1.80 0.071
1.78 0.070
Note plating contact finger solder coat.
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