GK 223 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Fulltext Datasheet Results |
1 - 50 of about 253 for GK 223 |
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First line: gk 221 GK 223 gk-71 Gk 151 Gk 101 Plastic Enclosures Seite Seite Seite Abstract: .. GK 201 GK 202 GK 203 160 x 160 x 90 GK 211 GK 212 GK 213 240 x 160 x 90 GK 221 GK 222 GK 223 240 x 160 x 120 GK 231 GK 232 GK 233 300 x 230 x 86 GK 241 GK 242 GK 243 300 x 230 x 111 GK 251 GK 252 GK 253 360 x 200 x 150 Material .. Tags: Gk 101 Gk 151 gk-71 GK 223 gk 221 datasheet abstract.. |
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First line: gh 311 kf 202 transistor LB 122 transistor KE 910 GK transistor CERAMIC CHIP HIGH VOLTAGE KEMET's High Voltage Surface Mount Capacitors designed withstand high voltage applications. They offer high capacitance with leakage current high frequency. capacitors have pure (Sn) plated external electrodes Abstract: .. 18,000 J,K,M 183 FL FL FL LA GH GK GK HE HE HE HG JE JP JP JP KE KE KE KE. 22,000 J,K,M 223 FL FM FM LA GH GK GK HE HG HG HG JE JP JP JP KE KF KF KF. 27,000 J,K,M 273 FM FK FK LA GH HE HG HG HG JE JP JP JP KE KF KF KF. 33,000 J,K .. Tags: GK transistor KE 910 kf 202 transistor gh 311 transistors marking jp transistor fg 680 gd part marking FM ON KE marking KE diode marking KE marking code KE diode mark KE diode LB 122 transistor lb 122 s LB 122 datasheet abstract.. |
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First line: Marking Symbol KF kemet c0805c GK transistor ke marking transistor GK transistor 72 Solid Organic Tantalum Multilayer Ceramic Solid Aluminum Surface Mount Capacitors F3102_CE 4/10 Abstract: .. 22,000 223 J K M BB BB BB BB BB CB CB CB CB CB CB DC DC DC DC DC DC DD DC DC EB EB EB EB EB EB EB EB EB. 27,000 273 J .. 4,700,000 475 J K M FC FC FC FG FS GK GK. 5,600,000 565 J K M FF FF FF FH. 6,800,000 685 J K M FG FG FG FM. 8,200 .. Tags: GK transistor 72 ke marking transistor GK transistor kemet c0805c Marking Symbol KF F3102 CE |
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First line: IT 223 GK 223 st x2n X2N SCR 1.25 sensitive gate Abstract: .. 1.25 A SOT-223 Ttab = 99 °C SMBflat-3L Ttab = 111 °C. IT AV Average on-state current 180 ° .. R k GK Ω. Figure 7. Relative variation of dV/dt immunity versus gate-cathode resistance .. Tags: X2N SCR st x2n GK 223 IT 223 datasheet abstract.. |
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First line: smd marking KD ke marking transistor smd marking KE SMD MARKING CODE JE smd transistor marking hg Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs) High Voltage with Flexible Termination System FT-CAP) Dielectric, 500VDC-3000VDC (Commercial Grade) KEMET's High Voltage with Flexible Termin Abstract: .. EG UD UD FL FL FL LA LC LC GH GK GK. 18,000 pF 183 J K M UD UD UD UD UD UD FL FL FL LA UD UD GH GK GK. 22,000 pF 223 J K M UD UD UD UD FL FM FM LA UD UD GH GK GK. 27,000 pF 273 J K M UD UD UD UD FM FK FK LA UD UD GH. Cap. Cap Code. Voltage .. Tags: smd transistor marking hg SMD MARKING CODE JE smd marking KE ke marking transistor smd marking KD datasheet abstract.. |
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First line: GK 223 P0115* P1M marking code sot 223 p0115 scr P011xx Sensitive high immunity SCRs Abstract: .. SOT-223 Tamb = 70 °C. IT AV Average on-state current 180° conduction angle TO-92 Tl = 55 °C. 0.5 .. I [R ] / I [ =1k ] H GK H Ω RGK. Tj = 25°C. Figure 7. Relative variation of dV/dt immunity versus gate .. Tags: p0115 scr P1M marking code sot 223 P0115* GK 223 P0118 P0111DN P011xx |
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First line: X00602N* x0602 x0602 st x0602* scr x0602 sensitive gate SCRs Abstract: .. S = 5 cm2 SOT-223 60. Rth j-l Junction to lead DC TO-92 70. Rth j-t Junction to tab DC SOT-223 .. GK Ω. Figure 13. Surge peak on-state current versus number of cycles Figure 14. Non repetitive .. Tags: scr x0602 x0602 st X00602N* x0602* X00602MA datasheet abstract.. |
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First line: x0605 x0605 scr scr x0602 x0605 transistor x0605* X006 Series 0.8A SCRs SENSITIVE Symbol IT(RMS) VDRM/VRRM Value Unit Abstract: .. 2 SOT-223 Figure 8. Thermal resistance junction to ambient versus copper surface under tab .. GK Ω. Figure 13. Surge peak on-state current versus number of cycles Figure 14. Non repetitive .. Tags: scr x0602 x0605 scr x0605 transistor x0605* x0602* X00605MA X00605 X00602 On semiconductor date Code sot-223 2AL2* datasheet abstract.. |
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First line: Kemet DATE CODE aluminum electrolytic jc 817 BB 298 kf 470 replacements transistors FJ 3528 Solid Organic Tantalum Multilayer Ceramic Solid Aluminum Surface Mount Capacitors F3102 4/10 Abstract: .. 22,000 223 J K M BB BB BB BB BB CB CB CB CB CB CB DC DC DC DC DC DC DD DC DC EB EB EB EB EB EB EB EB EB. 27,000 273 J .. 4,700,000 475 J K M FC FC FC FG FS GK GK. 5,600,000 565 J K M FF FF FF FH. 6,800,000 685 J K M FG FG FG FM. 8,200 .. Tags: FJ 3528 kf 470 replacements transistors BB 298 jc 817 Kemet DATE CODE aluminum electrolytic F3102 |
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First line: P010xxL* P0102DA GK 223 P9A* P010xx Sensitive standard SCRs Abstract: .. S 1 = 5 cm2 SOT-223 60. Rth j-a Junction to ambient mounted on FR4 with recommended pad layout .. I [R ] / I [ =1k ] H GK H Ω RGK. Tj = 25°C. Typical values. Figure 9. Relative variation of dV/dt immunity .. Tags: P9A* GK 223 P0102DA P010xxL* p0109da* P0102BL P0102BA P0102AL 5AA4 P0102AL P0102AA p0102* marking codes transistors sot-223 GK SOT23 P010xx |
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First line: 1206 fuse FD fd 101 GK 223 fd 35 k CERAMIC OPEN MODE CAPACITORS KEMET's Open Mode Ceramic Surface Mount Capacitor designed significantly minimize probability Short Circuit Condition when forced failure board flex situation. This reduces potential causing catastrophic failures. This product RoHS Comp Abstract: .. 223 DD DD DD DG EC. 273 DD DD DD DG EC. 333 DD DD DD DG EC. 393 DD DD DD DG EC. 473 DD DD DD DE EC EC EC EC EG GB. 563 DD .. 334 EG EG EG EG FD FD FD FH GB GB GB GK. 394 EG EG FD FD FG FH GB GB GB GL. 474 DE DG EG EG EC FD FD FG FJ GB GB GC. 564 .. Tags: GK 223 fd 101 fj series capacitor fd 35 k 1206 fuse FD datasheet abstract.. |
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First line: GK 223 Series 1.25A SCRs SENSITIVE Abstract: .. SOT-223 Ttab = 95ΥC. IT AV Average on-state current 180Υ conduction angle TO-92 TI = 55ΥC. 0.8 .. I H I T = 50 mA R GK = 1 k Ω MAX. 5 mA. IL IG = 1 mA RGK = 1 k Ω MAX. 6 mA. dV/dt VD = 67 % V DRM RGK = 1 k Ω Tj = 110ΥC MIN .. Tags: GK 223 X0202NN 5BA4 datasheet abstract.. |
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First line: 5AA4* GK 223 SCR p01 Series 0.8A SCRs SENSITIVE Abstract: .. SOT-223 P01xxN Obsolete Product s - Obsolete Product s Obsolete Product s - Obsolete .. VDRM = VRRM R GK = 1 kΩ Tj = 125°C MAX. 100 μA. Symbol Parameter Value Unit. Rth j-i Junction to case .. Tags: SCR p01 GK 223 5AA4* datasheet abstract.. |
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First line: SCR p01 GK 223 Series 0.8A SCRs SENSITIVE Abstract: .. SOT-223 Tamb = 70°C. IT AV Average on-state current 180° conduction angle TO-92 Tl = 55°C. 0.5 .. VDRM = VRRM R GK = 1 kΩ Tj = 125°C MAX. 100 μA. Symbol Parameter Value Unit. Rth j-i Junction to case .. Tags: GK 223 SCR p01 datasheet abstract.. |
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First line: GK 223 SCR p01 Series 0.8A SCRs SENSITIVE Abstract: .. SOT-223 Tamb = 70ΥC. IT AV Average on-state current 180Υ conduction angle TO-92 Tl = 55ΥC. 0.5 .. mA R GK = 1 k Ω MAX. 5 mA. IL IG = 1 mA RGK = 1 k Ω MAX. 6 mA. dV/dt VD = 67 % V DRM RGK = 1 k Ω Tj = 125ΥC MIN. 75 80 75 V .. Tags: GK 223 SCR p01 datasheet abstract.. |
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First line: 4047-B VALVE (Replaces 4047-A Valve which been abandoned) SINGLE ENDED WATER COOLED TRIODE. Cathode. SPECIFICATION. Pure tungsten filament. Constant voltage type. Water Jacket. Type MS.1362 Grp. anode dissipation Abstract: .. Types 223 LU IA or PL 122011 3001-A for anode dissipation over 6 Kw. Water Flow. 5 gallons per .. <n Û- cSo-3 id gK I » < ¿3 +400 400 +200 n +100 Vjr+600 £00. 500 1000 1500 -anode voltage Volts .. Tags: GK 223 datasheet abstract.. |
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First line: GK 223 gk 221 fg 680 fd 35 k transistor fg 680 gd CERAMIC OPEN MODE CAPACITORS KEMET's Open Mode Ceramic Surface Mount Capacitor designed significantly minimize probability Short Circuit Condition when forced failure board flex situation. This reduces potential causing catastrophic failures. This pr Abstract: .. 223 DD DD DD DG EC. 273 DD DD DD DG EC. 333 DD DD DD DG EC. 393 DD DD DD DG EC. 473 DD DD DD DE EC EC EC EC EG GB. 563 DD .. 334 EG EG FD FD FD FH GB GB GB GK. 394 EG EG FD FD FG FH GB GB GB GL. 474 DE DG EG EG EC FD FD FG FJ GB GB GC. 564 EG FD .. Tags: fd 35 k gk 221 GK 223 transistor fg 680 gd TM 1812 fg 680 gd fg 680 FD 1200 dd 22 s 800 datasheet abstract.. |
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First line: GK 223 gk 221 CERAMIC OPEN MODE CAPACITORS KEMET's Open Mode Ceramic Surface Mount Capacitor designed significantly minimize probability Short Circuit Condition when forced failure board flex situation. This reduces potential causing catastrophic failures. This product RoHS Compliant. Applications: Abstract: .. 223 DD DD DD DG EC. 273 DD DD DD DG EC. 333 DD DD DD DG EC. 393 DD DD DD DG EC. 473 DD DD DD DE EC EC EC EC EG GB. 563 DD .. 334 EG EG FD FD FD FH GB GB GB GK. 394 EG EG FD FD FG FH GB GB GB GL. 474 DE DG EG EG EC FD FD FG FJ GB GB GC. 564 EG FD .. Tags: gk 221 GK 223 transistor fg 680 gd fg 680 FG 1100 FD 1200 dd 22 s 800 datasheet abstract.. |
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First line: GK 223 Board Mounting Type Abstract: .. GK HH series PC Board Mounting Type. Higher C/V products. Plentiful line-up from φ35 〈 63 to φ40 .. 223. 273. 333. 393. 473. 563. 683. 35 〈 63 5.90 35 〈 68 6.20 35 〈 80. 6.90. 40 〈 50 5.75 40 〈 63 6.45 40 〈 63. 6.70. 35 40 .. Tags: GK 223 GU Series Capacitors datasheet abstract.. |
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First line: 600f S4M02-600F SCRs AMPERES VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors Abstract: .. 1 R GK current is not included in measurement. RATING AND CHARACTERISTIC CURVES S4M02-600F. 0 .. D=SOT-223. F=TO-126. S4M02-600F 4A SCR Legal Disclaimer Notice S4M02-600F. LSC reserves the .. Tags: 600f s4m02* S4M02-600F S4M02600F s4m02 datasheet abstract.. |
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First line: GK 223 105°C Board Mounting Type Abstract: .. GK HH series 105°C PC Board Mounting Type. Higher C/V products. Plentiful line-up from φ35 × 63 to .. 223. 273. 333. 393. 473. 563. 683. 35 × 63 5.90 35 × 68 6.20 35 × 80. 6.90. 40 × 50 5.75 40 × 63 6.45 40 × 63. 6.70. 35 40 .. Tags: GK 223 GU Series Capacitors datasheet abstract.. |
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First line: GK 223 Board Mounting Type Abstract: .. GK HH series PC Board Mounting Type. Higher C/V products. Plentiful line-up from φ35 〈 63 to φ40 .. 223. 273. 333. 393. 473. 563. 683. 35 〈 63 5.90 35 〈 68 6.20 35 〈 80. 6.90. 40 〈 50 5.75 40 〈 63 6.45 40 〈 63. 6.70. 35 40 .. Tags: GK 223 GU Series Capacitors datasheet abstract.. |
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First line: GK 223 Board Mounting Type Abstract: .. GK HH series PC Board Mounting Type. Higher C/V products. Plentiful line-up from φ35 × 63 to φ40 .. 223. 273. 333. 393. 473. 563. 683. 35 × 63 5.90 35 × 68 6.20 35 × 80. 6.90. 40 × 50 5.75 40 × 63 6.45 40 × 63. 6.70. 35 40 .. Tags: GK 223 GU Series Capacitors datasheet abstract.. |
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First line: dfb stm-64 GK 223 connectors alcatel 73 5302 Alcatel 1915 ps/nm application Gbit/s digital Laser Module with integrated electro-absorption Modulator Description Alcatel 1915 contains Alcatel laser with monolithically integrated electro-absorption modulator (ILM). modulation voltage applied modulator Abstract: .. without fiber ; see recommended circuit in Application Note 9.953 Gbit/s, 223-1 PRBS NRZ, Tc .. 1555,74 192,7 GK EH. 1556,55 192,6 GL EK. 1557,36 192,5 GM EM. 1558,17 192,4 GN EP. 1558,98 192,3 GP ER .. Tags: 73 5302 GK 223 dfb stm-64 LOG pc LASER programs connectors alcatel Alcatel Microelectronics STM64 OC-192 |
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First line: dfb stm-64 GK 223 73 5302 Alcatel 1915 1600 ps/nm application Gbit/s digital Laser Module with integrated electro-absorption Modulator Description Alcatel 1915 contains Alcatel laser with monolithically integrated electro-absorption modulator (ILM). modulation voltage applied modulator section while Abstract: .. without fiber ; see recommended circuit in Application Note 9.953 Gbit/s, 223-1 PRBS NRZ, Tc .. 1555,74 192,7 GK EH. 1556,55 192,6 GL EK. 1557,36 192,5 GM EM. 1558,17 192,4 GN EP. 1558,98 192,3 GP ER .. Tags: 73 5302 GK 223 dfb stm-64 connectors alcatel Alcatel Microelectronics STM64 OC-192 |
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First line: GK 223 photodiode fc/pc photodiode fc/pc 73 5302 GN 1554 Alcatel 1916 12800 ps/nm Gbit/s digital Laser Module with integrated electro-absorption Modulator Description This Alcatel 1916 contains Alcatel laser with monolithically integrated electro-absorption modulator (ILM). This chip provides much Abstract: .. [1] BER = 10-10; 2.488 Gbit/s modulation; 223-1 PRBS; NZR line code; DER ≥ 10dB [2] 7200 ps/nm .. 1555,74 GK KH FC/PC. 1556,55 GL KK FC/PC. 1557,36 GM KM FC/PC. 1558,17 GN KP FC/PC. 1558,98 GP KR FC/PC .. Tags: GN 1554 73 5302 photodiode fc/pc GK 223 photodiode fc/pc optical fiber G.652 Alcatel fc/pc STM-16 |
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First line: BO2* GK 223 BO25 VISHAY BJ Part Numbering Part Numbering Ohmic Value, Tolerance, Packaging, Shaft Bushing PART NUMBERING: CONVERSION TABLE OHMIC VALUE Abstract: .. 22 220 22 000 223. 25 250 25 000 253. 47 470 47 000 473. 50 500 50 000 503. 100 101 100 000 104. 200 201 200 000 .. G GA GB - GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR. Example: DAS Diameter 3.5 mm Length 3/8” Slotted .. Tags: BO25 GK 223 BO2* VISHAY BJ ap 474 AE GP 531 datasheet abstract.. |
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First line: GK 223 DG CONNECTOR 1546 GN 1554 ALCATEL A 1915 LMI KT 819 transistor Alcatel 1915 direct modulation 1.55 Digital Laser Module with optical Isolator Description This laser module contains Alcatel SLMQW laser with impedance matching designed Wavelength Division Multiplexed (WDM) systems, direct modu Abstract: .. ] 2.5 Gbit/s direct modulation, 223-1 PRBS, 14 ± 1 % extinction ratio, NRZ line code at Pmean=1mW .. 1555,75 192,7 EK GK LK. 1556,56 192,6 EL GL LL. 1557,36 192,5 EM GM LM. 1558,17 192,4 EN GN LN. 1558,98 .. Tags: KT 819 transistor ALCATEL A 1915 LMI GN 1554 DG CONNECTOR 1546 GK 223 RT 1530 KT 703 ev stm STM-16 |
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First line: GK 223 GN 1554 Alcatel 1916 12800 ps/nm Gbit/s digital Laser Module with integrated electro-absorption Modulator Description This Alcatel 1916 contains Alcatel laser with monolithically integrated electro-absorption modulator (ILM). This chip provides much lower dispersion penalties than directly mo Abstract: .. [1] BER = 10-10; 2.488 Gbit/s modulation; 223-1 PRBS; NZR line code; DER ≥ 10dB [2] 7200 ps/nm .. 1555,74 GK KH FC/PC. 1556,55 GL KK FC/PC. 1557,36 GM KM FC/PC. 1558,17 GN KP FC/PC. 1558,98 GP KR FC/PC .. Tags: GN 1554 GK 223 photodiode fc/pc KT 703 fc/pc STM-16 |
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First line: dfb stm-64 GK 223 Alcatel 1915 Gbit/s digital Laser Module with integrated electro-absorption Modulator Description This Alcatel 1915 contains Alcatel laser with monolithically integrated electro-absorption modulator (ILM). This chip provides much lower dispersion penalties than directly modulated D Abstract: .. [1] BER = 10-10; 9,953 Gbit/s modulation; 223-1 PRBS; NZR line code [2] 800 ps/nm dispersion .. 1555,74 192,7 GK FC/PC. 1556,55 192,6 GL FC/PC. 1557,36 192,5 GM FC/PC. 1558,17 192,4 GN FC/PC. 1558 .. Tags: GK 223 dfb stm-64 photodiode fc/pc connectors alcatel STM-64 |
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First line: RT9161-43CX GK 223 marking C7 sot marking GB SOT 23 transistor GK sot-89 RT9161/A 300/500mA Dropout Linear Voltage Regulator RT9161/A 300/500mA fixed output voltage dropout linear regulator. Typical ground current approximately 110µA, from zero maximum loading conditions. Wide range available Abstract: .. Package type ZL : TO-92 ZT : TO-92 X : SOT-89 G : SOT-223 V : SOT-23. Output voltage 15 : 1.5V 16 : 1.6V .. RT9161A-34CX GK. RT9161A-35CX GL. RT9161A-36CX GM. RT9161A-37CX GN. RT9161A-38CX GP. RT9161A .. Tags: transistor GK sot-89 marking GB SOT 23 marking C7 sot GK 223 RT9161-43CX transistor CG sot-223 sot-89 marking GX sot-23 Marking ag rtb7 rtb4* RT9161A RT9161-33CX RT9161-33CV 37CV 33cx RT9161 A |
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First line: GK 223 CR08AS-12 Thyristor Power Abstract: .. 10–223 57 23 57 101 23 57 102 23 57 23 10–1. VGT = 0.8V IGT = 100μA Tj = 25°C PGM = 0.5W. VGD = 0.2V. IFGM = 0 .. GK = 1kΩ Breakover Voltage vs. Rate of Rise of Off-State Voltage. Rate of Rise of Off-State .. Tags: GK 223 CR08AS-12 |
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First line: GK 223 STSE-CM2199B <Cat.No.030526> SPECIFICATIONS NICHIA FULL COLOR MODEL NSTM515AS Abstract: .. x 0.190 0.140 0.180 0.223 0.250 0.219. y 0.628 0.729 0.740 0.735 0.638 0.637. Red. Rank R. x 0.674 0 .. $I&gK%HA"A:&"J&O>"HAIG&?H&A$"J&V%C8& &NKA&A$"J&F%VIF&?H&A$I .. Tags: GK 223 SK 582 NSTM515AS |
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First line: GK 223 KD 472 M JC EB marking HB KD 472 M Surface Mount Ceramic Chip Capacitors Abstract: .. 22,000 223 J,K,M CB CB CB CB CB CB DC DC DC DC DC DD DC EB EB EB EB EB EB EB FB FB FB FB FB FB FB. 27,000 273 J,K .. 10,000,000 106 J, K, M GK JF JO. 12,000,000 126 J, K, M. 15,000,000 156 J, K, M JO. 18,000,000 186 J, K, M .. Tags: JC EB KD 472 MÂ GK 223 transistor 152 M marking HB marking code cb KD 472 M KD 271 j 182 GC 564 F3102 1808 eb 102 CERAMIC 102 K cd 332 m datasheet abstract.. |
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First line: C2225X* KD 472 M GK 223 Surface Mount Ceramic Chip Capacitors FT-CAP Flexible Terminations Standard Electrode Internal Design Abstract: .. 22,000 223 J,K,M CB CB CB CB CB CB DC DC DC DC DC DD DC EB EB EB EB EB EB EB FB FB FB FB FB FB FB. 27,000 273 J,K .. 1812 GK 1.60 ± 0.20 1,000 4,000 - - -. 1812 GL 1.90 ± 0.20 1,000 4,000 - - -. 1812 GM 2.00 ± 0.20 1,000 4 .. Tags: GK 223 KD 472 M C2225X* transistor fg 680 gd marking HB diode KC series dimension GB CD 07 code jc CERAMIC 102 K cb 10 b 60 kd C2220X* C1812X datasheet abstract.. |
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First line: transistor cq 1565 MZ 1530 CQ 1565 RT MZ 1540 mz 1532 Alcatel 1915 direct modulation 1.55 Laser Module with optical Isolator Description This laser module contains Alcatel SLMQW laser with impedance matching designed Wavelength Division Multiplexed (WDM) systems, high power direct modulation operati Abstract: .. [1] Tcase = 65°C, Tsubmount = 25°C, P = 10 mW [2] 2.5 Gbit/s direct modulation, Pmean = 5 mW, 223-1 .. GK MK 1540,56 194,60 CT HT NT. 1528,38 196,15 BL GL ML 1540,95 194,55 CU HU NU. 1528,77 196,10 BM GM MM .. Tags: mz 1532 MZ 1540 CQ 1565 RT MZ 1530 transistor cq 1565 PN 5024 mz 73 b KT 703 GJ 96 EY 86 dk qb bs 5424 BQ JN STM-16 |
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First line: GK 223 fg 680 (NP0), X7R, X5R, Dielectrics Volts Standard Metalization: Tin-plate over nickel barrier Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; +80%-20% Tape reel packaging EIA481-1. (See page spe Abstract: .. 22,000.0 223 F,G,J,K, M FB FB FB FB FB GB GB HB HE JB JB KB KB. 27,000.0 273 F,G,J,K, M FB FB FB FB FB GB GB .. 220,000.0 224 F,G,J,K,M FK+ FK+ FK+ GK JB JD. 270,000.0 274 F,G,J,K,M JB JF. 330,000.0 334 F,G,J,K .. Tags: GK 223 transistor fg 680 gd marking HB fg 680 FD 1200 dimension GB CD 07 EIA481-1 IEC60286-6 |
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First line: *96211* GK 223 Power Specif ication Absolute Maximum Ratings Item Symbol Condition Unit Storage Temperature -55-150 Channel Temperature Drain-Source Voltage Vnss Gate-Sourse Voltage VfiSS Drain Current (DC) (Peak) Pulse width Duty cvcle 1/100 Source Current (DC) Abstract: .. 2 1 1 EDIT - 1 7007 8211367 GDD2742 223 1 / 2 sheet 3 . Out 1 ine Dimension 6.6 ¿0.2 Type name Date code .. gK~~~ SHINOENGEN ELECTRIC MFG. CO .. LTO. :3. . . 8219387 0002745 T32 . . 2SK2817. 'J - A rs~;t /}~}JL .. Tags: GK 223 *96211* datasheet abstract.. |
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First line: LA-34200* GK 223 LA SERIES K/Light Emitting Diodes LA-3000 Series LA-3000 Series im^tz, 7.6mm, These 1-digit numeric displays emitting material GaP, displayed character size 7.6mm. 7.6mm (0.3 Abstract: .. -72/3920/3620/3820/3420 LA-78/3980/3680/3880/3480 noNm 223 < t- K/Light Emitting Diodes .. LA-78/ L A-3980/ LA-3680/ LA-3880/ LA-3480 •Gk DP Pin No. Function 1 Common Cathode. 2 .. Tags: LA SERIES GK 223 LA-34200* datasheet abstract.. |
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First line: GK 223 (NP0), X7R, X5R, Dielectrics Volts Standard Metalization: Tin-plate over nickel barrier Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; +80%-20% Tape reel packaging EIA481-1. (See page specific t Abstract: .. 22,000 223 J,K,M FB FB FB FB FB FB FB LD LD GB GB GB GB HB HB HB. 27,000 273 J,K,M FB FB FB FB FB FB FB LD LD GB .. GK 1812 1.60 ± 0.20 1,000 4,000 N/A N/A N/A. GL 1812 1.90 ± 0.20 1,000 4,000 N/A N/A N/A. GM 1812 2.00 ± 0 .. Tags: GK 223 transistor fg 680 gd marking HB marking code cb FD 1200 EIA481-1 IEC60286-6 |
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First line: dimension GB CD 07 marking HB diode GK 223 M/fk 010 dc/dc (NP0), X7R, X5R, Dielectrics Volts Standard Metalization: Tin-plate over nickel barrier Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; +80%-20% Abstract: .. 22,000 223 K,M,J* BB BB BB BB* BB* CB CB CB CB CB CB DC DC DC DC DC DD DC EB EB EB EB EB EB EB. 27,000 273 K,M .. 3,900,000 395 K,M,J 4,700,000 475 K,M,J FC*+ FC*+ FC*+ FG*+ FS*+ GK+ GK+ 5,600,000 565 K,M,J 6 .. Tags: dc/dc M/fk 010 GK 223 marking HB diode dimension GB CD 07 transistor fg 680 gd marking HB M/fE 556 EIA481-1 IEC60286-6 |
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First line: 796 HC Series Coils, Transformers Abstract: .. GK 562 5,600 ±5 50 0.252 410 9.0 0.22 0.17. GL 682 6,800 ±5 50 0.252 380 10 0.21 0.16. GM 822 8,200 ±5 50 0 .. HE 223 22,000 ±5 60 0.0796 200 43 0.11 0.075. HF 273 27,000 ±5 60 0.0796 150 67 0.098 0.060. HG 333 33 .. Tags: 796 HC mitsumi 681 Mitsumi fm coil data GK 223 datasheet abstract.. |
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First line: Marketing Information 28,5 Abstract: .. tc = 54°C 223. Stoßstrom-Grenzwert surge current tvj = 25°C, t p = 10 ms ITSM 4500 A. tvj = tvj max, tp .. Einraststrom latching current tvj = 25 °C,v D = 6 V, R GK > = 10 Ω IL max.1,2 A. iGM = 1 A, di G/dt = 1 A/μs .. Tags: tt 104 n 12 datasheet abstract.. |
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First line: Marketing Information 28,5 Abstract: .. tc = 68°C 223. Stoßstrom-Grenzwert surge current tvj = 25°C, t p = 10 ms ITSM 5200 A. tvj = tvj max, tp .. Einraststrom latching current tvj = 25 °C,v D = 6 V, R GK > = 10 Ω IL max.1,2 A. iGM = 1 A, di G/dt = 1 A/μs .. Tags: tt 104 n 12 datasheet abstract.. |
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First line: breaker ehd FLB221-TT20-2* WT175 circuit breaker TFK diode 361 Circuit Breakers Enclosures Div. Groups Div. Groups E,F,G Div. Groups NEMA 3,4,7CD,9EFG Explosionproof Dust-Ignitionproof Raintight Locations Watertight Abstract: .. : JAN 19 2006 Time: 6:18:48 PM Operator: GK COLOR: CMYK TCP: 15001 Typedriver Name: TS name csm .. , 172, 173, 175, 222, 361, 116, 142, 149, 174, 177, 223, 362 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 .. Tags: TFK diode 361 circuit breaker WT175 FLB221-TT20-2* breaker ehd datasheet abstract.. |
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First line: 796 HC C8-FR1, C10-FR1, C13-FR Series Coils, Filters Abstract: .. GK 562 5,600 ±5 50 0.252 410 9.0 0.22 0.17. GL 682 6,800 ±5 50 0.252 380 10 0.21 0.16. GM 822 8,200 ±5 50 0 .. HE 223 22,000 ±5 60 0.0796 200 43 0.11 0.075. HF 273 27,000 ±5 60 0.0796 150 67 0.098 0.060. HG 333 33 .. Tags: 796 HCÂ transistor fg 680 gd mitsumi 821 mitsumi 681 GJ 96 EB-120 C13-FR 796 HC datasheet abstract.. |
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First line: mitsumi 821 Series Coils, Transformers Abstract: .. GK 562 5,600 ±5 0.252 410 9.0 0.22 0.17. GL 682 6,800 ±5 0.252 380 10 0.21 0.16. GM 822 8,200 ±5 0.252 .. HE 223 22,000 ±5 0.001 200 43 0.11 0.075. HF 273 27,000 ±5 0.001 150 67 0.098 0.060. HG 333 33,000 ±5 0 .. Tags: mitsumi 821 datasheet abstract.. |
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First line: 752 J 1600 V CAPACITOR Ceramic chips consist formulated ceramic dielectric materials which have been fabricated into thin layers, interspersed with metal electrodes alternately exposed opposite edges laminated structure. entire structure then fired high temperature produce monolithic block which pro Abstract: .. 22,000 223 K,M,J* BB BB BB BB* BB* CB CB CB CB CB CC DC DC DC DC DC DD DC EB EB EB EB EB EB EB. 27,000 273 K,M .. 3,900,000 395 K,M,J 4,700,000 475 K,M,J FC*+ FC*+ FC*+ FG*+ FS*+ GK+ GK+ 5,600,000 565 K,M,J 6 .. Tags: capacitor 4700 micro farad 25V 752 J 1600 V CAPACITOR MLCC crack probability F-2105 transistor fg 680 gd kemet ceramic esr KD 472 M CERAMIC 102 K CB 3500 Series capacitor 2200 micro farad 25V B 103 K ceramic capacitor 821 ceramic capacitor 752 J 1600 V CAPACITOR 1206-103 10 micro farad 16V capacitor datasheet abstract.. |
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First line: 821 ceramic capacitor Ceramic chips consist formulated ceramic dielectric materials which have been fabricated into thin layers, interspersed with metal electrodes alternately exposed opposite edges laminated structure. entire structure then fired high temperature produce monolithic block which prov Abstract: .. 22,000 223 K,M,J* BB BB BB BB* BB* CB CB CB CB CB CC DC DC DC DC DC DD DC EB EB EB EB EB EB EB. 27,000 273 K,M .. 3,900,000 395 K,M,J 4,700,000 475 K,M,J FC*+ FC*+ FC*+ FG*+ FS*+ GK+ GK+ 5,600,000 565 K,M,J 6 .. Tags: CDR02BX392BKW transistor fg 680 gd MIL-PRF-55681 dc/dc/dc 0.5-0 CERAMIC 102 K CB 3500 Series capacitor 2200 micro farad 25V 821 ceramic capacitor 10 micro farad 16V capacitor datasheet abstract.. |
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First line: CDR02BX392BKW Ceramic chips consist formulated ceramic dielectric materials which have been fabricated into thin layers, interspersed with metal electrodes alternately exposed opposite edges laminated structure. entire structure then fired high temperature produce monolithic block which provides hig Abstract: .. 22,000 223 K,M,J* BB BB BB BB* BB* CB CB CB CB CB CC DC DC DC DC DC DD DC EB EB EB EB EB EB EB. 27,000 273 K,M .. 3,900,000 395 K,M,J 4,700,000 475 K,M,J FC*+ FC*+ FC*+ FG*+ FS*+ GK+ GK+ 5,600,000 565 K,M,J 6 .. Tags: CDR02BX392BKW transistor fg 680 gd KD 472 M CB 3500 Series capacitor 2200 micro farad 25V C1206 open mode B 103 K ceramic capacitor 821 ceramic capacitor 10 micro farad 16V capacitor datasheet abstract.. |
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