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1 - 50 of about 10000+ for Fuji Electric |
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First line: transistor t04 Ratings Characteristics Fuji Power Transistor 2SD2 1.Outline Drawings T0-3PF (Full Molded Package) Absolute Maximum Ratings (Tc=25,C) Item Symbols Maximum Rating Unit Collector-Base Voltage Collector-Emitter Voltage Veto Emitter-Base Voltage Collector Current Collector Current pulse B Abstract: .. i t i ons Min Max Unit Thermal Resistance Rth j-c Junction to Case 1.55 â– c/w o Fuji Electric Co,L ±cL % 2/e Y 0257-R-003a â– ES3ñ?cJB DGDMSTS BT5 â– This Material Copyrighted By Its Respective .. Tags: transistor t04 datasheet abstract.. |
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First line: fuji transistor module data book fuji dc/servo motors schematic fuji transistor module DC Motor control IGBT FUJI ELECTRIC 1MBI200S-120 IGBT MODULE series) 1200V 200A package High speed switching Voltage drive Inductance module structure Abstract: .. patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is or shall be deemed granted. Fuji Electric Device Technology Co. .. Tags: fuji transistor module dc/servo motors schematic data book fuji fuji transistor module fuji servo drive fuji igbt DC Motor control IGBT FUJI ELECTRIC 1MBI200S-120* datasheet abstract.. |
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First line: 2MBI75S-120 inverter welding set dc/servo motors schematic DC Motor control IGBT FUJI ELECTRIC 2MBI75S-120 IGBT MODULE series) 1200V package High speed switching Voltage drive Inductance module structure Abstract: .. patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is or shall be deemed granted. Fuji Electric Device Technology Co. .. Tags: inverter welding set 2MBI75S-120 fuji servo drive dc/servo motors schematic DC Motor control IGBT FUJI ELECTRIC A/fuji* datasheet abstract.. |
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First line: fuji igbt FUJI IGBT 100A DC Motor control IGBT FUJI ELECTRIC 1MBH20D-060 600V Molded Package Small molded package power loss Soft switching with switching surge noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-up Abstract: .. patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is or shall be deemed granted. Fuji Electric Device Technology Co. .. Tags: FUJI IGBT 100A fuji igbt fuji servo drive DC Motor control IGBT FUJI ELECTRIC 600v 20a IGBT datasheet abstract.. |
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First line: DC Motor control IGBT FUJI ELECTRIC 1MBH10D-120 1200V Molded Package Small molded package power loss Soft switching with switching surge noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-up Abstract: .. patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is or shall be deemed granted. Fuji Electric Device Technology Co. .. Tags: DC Motor control IGBT FUJI ELECTRIC fuji servo drive datasheet abstract.. |
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First line: TAB25* Device Name iigh Voltage icon Diode Type Name Spec. Fuji Electric Co.,Ltd. Matsumoto Factory DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN Abstract: .. No. Fuji Electric Co.,Ltd. Matsumoto Factory DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED t OWG.NO. m 2230712 0D0L202 155 H. T. SCOPE IV-ÃŒ à ̄SHà ̄ Uff" - a o Sii îj ss| fill? ÛISà .. Tags: TAB25* datasheet abstract.. |
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First line: Abstract: .. No. Fuji Electric Co.,Ltd. Matsumoto Factory DRAWN CHECKED DATE NAME APPROVED Fuji Electric Co.,Ltd. 22307^2 DÃœGL210 2T1 H04-004-07 1. SCOPE This specification provide the ratings and the .. Tags: datasheet abstract.. |
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First line: AS15 AS15 U AS15 f AS15 G Abstract: .. No. Fuji Electric Co.,Ltd. Matsumoto Factory DATE DRAWN iCHECKED' NAME APPROVED Fuji Electric Co.,Ltd. H04-004-07 3 O S ° » 3 » IJ Ii U e . S w Ii lì à ̄'s I! n cJ. • D " 5 * c « SS « « • Ê15 S 5. ili .. Tags: AS15 G AS15 f AS15 U AS15 datasheet abstract.. |
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First line: CJ 53B ilik Abstract: .. No._;_ Fuji Electric Co.,Ltd. Matsumoto Factory DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN t CHECKED 1 o i 2233712 GDOtBSa 171 H04-004-07 SCOPE This specification provide the ratings .. Tags: CJ 53B datasheet abstract.. |
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First line: -it! Abstract: .. No. Fuji Electric Co.,Ltd. Matsumoto Factory DRAWN CHECKED DATE NAME APPROVED Fuji Electric Co.,Ltd. 22307^2 0IHDL242 ÛD1 H04-004-07 1. SCOPE •S s J IM - S* s is 0 » 3 » j à à • S ' • 1 - ?<5 .. Tags: datasheet abstract.. |
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First line: Ir 150F ESJA53-20A 20KV DIODE HIGH VOLTAGE DIODE 20kv Abstract: .. No._; _ Fuji Electric Co.,Ltd. Matsumoto Factory DATE NAME APPROVED Fuji Electric Co^Ltd. DRAWN ! CHECKED . 1 OWG.KO. 1 1 - â– 3333773 â–¡â–¡Db234 735 B ..HW-oo4-O7 1. SCOPE • ¡I 1- .. Tags: HIGH VOLTAGE DIODE 20kv 20KV DIODE ESJA53-20A Ir 150F datasheet abstract.. |
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First line: Device Name_: High Voltage icon Diode Type Name_: ESJA04-Q2 Spec. No._:_ Abstract: .. « H ll Fuji Electric Co.,Ltd. Matsumoto Factory Fuji Electric Co.,Ltd. DATE NAME DRAWN CHECKED APPROVED H04—004-07 1. SCOPE This specif ¡cation provide the ratings and the requirements .. Tags: datasheet abstract.. |
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First line: FMI16N50E Super FAP-E3 series Abstract: .. FMI16N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMI16N50E |
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First line: FMP11N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMP11N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMP11N60E |
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First line: FMC20N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMC20N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMC20N50E |
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First line: FMV07N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV07N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMV07N50E |
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First line: FMP05N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMP05N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMP05N60E |
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First line: FMC12N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMC12N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMC12N50E |
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First line: FMI20N50E Super FAP-E3 series Abstract: .. FMI20N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMI20N50E |
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First line: FMP12N50E* FMP12N50E fmp*12n50e FMP12N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMP12N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMP12N50E FMP12N50E* fmp*12n50e FMP12N50E |
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First line: FMV05N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV05N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMV05N50E |
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First line: FMI03N60E Super FAP-E3 series Abstract: .. FMI03N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMI03N60E |
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First line: FMV23N50e FMV23N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV23N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMV23N50e FMV23N50E |
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First line: FMV12N50E FMV12N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV12N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMV12N50E* FMV12N50E |
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First line: FMH28N50E* FMH28N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMH28N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMH28N50E* FMH28N50E |
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First line: FMH16N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMH16N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMH16N50E FMH1* FMH16N50E |
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First line: FMV20N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV20N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: fmv20n50e* FMV20N50E |
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First line: FMP13N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMP13N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: fmp*13N60E FMP13N60E |
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First line: FMI11N60E Super FAP-E3 series Abstract: .. FMI11N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMI11N60E |
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First line: FMV05N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV05N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMV05N60E |
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First line: FMH20N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMH20N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMH20N50E |
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First line: FMP03N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMP03N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMP03N60E |
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First line: FMR28N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMR28N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMR28N50E |
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First line: FMP10N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMP10N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMP10N60E |
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First line: fmi*07N50E FMI07N50E Super FAP-E3 series Abstract: .. FMI07N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: fmi*07N50E FMI07N50E |
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First line: FMI05N60E Super FAP-E3 series Abstract: .. FMI05N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMI05N60E |
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First line: FMP20N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMP20N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMP20N50E |
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First line: FMI12N50E Super FAP-E3 series Abstract: .. FMI12N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMI12N50E |
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First line: FMV10N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV10N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMV10N60E |
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First line: FMI05N50E Super FAP-E3 series Abstract: .. FMI05N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMI05N50E |
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First line: FMC05N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMC05N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMC05N50E |
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First line: FMV08N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV08N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMV08N50E |
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First line: FMC05N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMC05N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMC05N60E |
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First line: FMV16N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV16N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMV16N50E FMV16N50E |
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First line: FMP16N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMP16N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMP16N50E |
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First line: FMV03N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMV03N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMV03N60E |
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First line: FMC16N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMC16N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMC16N50E |
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First line: FMC03N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMC03N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMC03N60E |
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First line: FMC11N60E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMC11N60E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMC11N60E |
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First line: FMP05N50E Super FAP-E3 series Maintains both power loss noise Lower (on) characteristic More controllable switching dv/dt gate resistance Smaller ringing waveform during switching Narrow band gate threshold voltage (3.0±0.5V) High avalanche durability Abstract: .. FMP05N50E FUJI POWER MOSFET. Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET. Features .. Electrical Characteristics at Tc=25°C unless otherwise specified Description Symbol .. Tags: FMP05N50E |
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