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FMM3171VI
Top Searches for this datasheetgaas mes - gaas mes FMM3171VI - FMM3171VI 1.25Gb/s GaAs Laser Driver FMM3171 FMM3171VI laser driver 1.2Gb/s optical transmission systems. GaAs MES-FET process allows high speed operation with power consumption. There data inputs options; complementary input single-ended input using selectable D-F/F. output duty ratio adjusting input reference voltage (Vref). differential mark-density monitor (Mmk) output proportional peak current output signal. peak current bias current output disabled shutdown terminal, which compatible. Logic "high" causes output disabled. High speed turn-on turn-off accomplished very compute time constant. amount peak current bias current monitored current flow terminal which must connected VSS. This FMM3171VI excellent choice laser driver OC-3/OC-12/OC-24 STM1/STM4 transmitters. FEATURES Compatible Data Input Built D-F/F (Optional) Complementary Data Input (Optional) Modulation Current: 70mA Bias Current: 70mA Output Shutdown Function Modulation Current Bias Current Monitor Duty Ratio Monitor Duty Ratio Control Single Power Supply: -5.2V Separated Peak Current Bias Current Outputs Small Package: SSOP-16 (VDD Symbol Tstg DIN, DIN, Ratings +125 -7.0 -2.0 +2.1 -2.0 +2.1 Unit ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Operating Temperature* Supply Voltage Input Voltage Peak Current Control Voltage Bias Current Control Voltage Lower limit temperature corresponds ambient temperature higher limit temperature corresponds case (the bottom case) temperature. RECOMMENDED OPERATING CONDITIONS Parameter Power Supply Voltage Data Clock Input Peak Current Control Voltage Bias Current Control Voltage Output Shutdown Control Voltage Selector Control Voltage Symbol Output enable Output disable (Shutdown) D-F/F active D-F/F inactive Test Conditions Limit Min. Typ. Max. -5.72 -5.2 -4.94 -1.0 -1.9 -1.9 -1.0 -0.9 -1.7 -1.7 -0.9 Open -0.7 -1.6 +2.1 +2.1 -1.6 -0.7 (VDD Unit Edition June 2000 FMM3171Parameter Maximum Data Rate Peak Current Symbol Test Conditions VIP=Vss VIB=Vss VSD="Low" =Vss+2.1V VIB=Vss VIP=Vss VSD="Low" VIB=Vss+2.1V VSD="High", VIP=VIB=Vss+2.1V RL=10 IP=60mA 20%-80% RL(for Mmk) Input Duty =1k/15nF 100% GND, NRZ, Mark density =50% Vss=-5.2, IP=60mA, IB=30mA Min. 1.25 1.25Gb/s GaAs Laser Driver Limit Typ. Max. -1.0 -0.5 Unit Gbps psec. psec. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25°C) Bias Current Residual Output Current Output Rise Time Output Fall Time Mark-Density Monitor Output VMmk Power Supply Current FMM3171VI Block Diagram IBOUT DataIN DataIN Vref D-FF ClockIN VREF 1.25Gb/s GaAs Laser Driver FMM3171PIN DESCRIPTION FMM3171VI FUNCTION DATA INPUT DATA INPUT CLOCK INPUT SELECTOR (VSE) SHUT DOWN (VSD) VREF(Duty Control) (VSS) Mmk(Duty Monitor) Mmk(Duty Monitor) IBOUT (VSS) Note: connected back side package Test Circuit 20dB ATTN Sampling Oscilloscope Vref Pulse Pattern Generator Selector Input Shutdown Input 0.33µF 0.068µF 15nF 0~1k FMM3171y "VI" PACKAGE 0.18 1.25Gb/s GaAs Laser Driver UNIT: (0.45) (0.25) (0.9) Heat Sink 2.8) (3.1) (3.6) (3.9) (2.0) Ground (0.4) 0.65 4.55 0.15 0.13 (3.2) (3.3) Unit: further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas R.O.W. 2355 Zanker Jose, 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which hazardous human body environment. safety, observe following procedures: www.fcsi.fujitsu.com this product into mouth. alter form this product into gas, powder, liquid through burning, crushing, chemical processing these by-products dangerous human body inhaled, ingested, swallowed. Observe government laws company regulations when discarding this product. This product must discarded accordance with methods specified applicable hazardous waste procedures. FME, Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire United Kingdom TEL: 1628 504800 FAX: 1628 504888 FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398 FUJITSU QUANTUM DEVICES SINGAPORE LTD. Hong Kong Branch 1101, Ocean Centre, Canton Tsim Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves right change products specifications without notice. information does convey license under rights Fujitsu Limited others. 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed U.S.A. FCSI0200M200 Other recent searchesSi4948EY - Si4948EY Si4948EY Datasheet SD13005 - SD13005 SD13005 Datasheet SA306-IHZ - SA306-IHZ SA306-IHZ Datasheet OC-12 - OC-12 OC-12 Datasheet NE38018 - NE38018 NE38018 Datasheet BUK209-50Y - BUK209-50Y BUK209-50Y Datasheet BTA208X-600E - BTA208X-600E BTA208X-600E Datasheet
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