FCX589
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SOT89 SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
FCX589
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation amb=25°C Operating Storage Temperature Range SYMBOL VCBO VALUE -200 +150
UNIT
ELECTRICAL CHARACTERISTICS Tamb 25°C).
PARAMETER Breakdown Voltages SYMBOL MIN. (BR)CBO (BR)CEO (BR)EBO Collector Cut-Off Current Collector -Emitter Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio CE(sat) BE(sat) BE(on) -100 -100 -100 -0.35 -0.65 -1.2 -1.1 MAX. UNIT CONDITIONS. C=-100µA C=-10mA* E=-100µA CB=-30V =-30V EB=-4V C=-1A, B=-100mA* C=-2A, B=-200mA* C=-1A, B=-100mA* =-1A, CE=-2V* C=-1mA, CE=-2V* C=-500mA, CE=-2V* C=-1A, CE=-2V* C=-2A, CE=-2V* C=-100mA, CE=-5V f=100MHz CB=-10V, f=1MHz
Transition Frequency Output Capacitance
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle typical Characteristics graphs FMMT549 datasheet
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