| Fulltext Datasheet Results |
1 - 50 of about 10000+ for ER 900 |
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First line: f21 diode Syntron* syntron diode Syntron 4B1 bridge rectifier Series Avalanche Silicon Rectifier Encapsulated Assemblies Turret Terminals Faston Terminals Flexible Leads Circuit Single phase full wave bridge input 1000 output .(Series Amps Amb.) (Series Amps Amb.) Abstract: .. 800 ER*9B1 .. 900 ER*10B1 ..1000 T12—turret terminal with Series 12 diode T21â .. Tags: 4B1 bridge rectifier Syntron syntron diode Syntron* f21 diode datasheet abstract.. |
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First line: a200 ER 900 BR47 transistor br51 transistor br22 Models IM-4x-ER IM-6x-ER Vishay Dale Military/Established Reliability MIL-C-39010 Qualified, M39010/04/05/06/07 Abstract: .. IM-6A-ER IM-6A-ER IM-6A-ER IM-6A-ER IM-6A-ER IM-6A-ER IM-6A-ER IM-6A-ER IM-6A-ER IM-6A-ER .. 900 900 785 785 650 650 600 600 525 525 435 435 385 385 300 300 280 280 260 260. 495 495 395 395 360 360 .. Tags: transistor br22 transistor br51 a200 m39010/06* m39010 ER 900 BR51 br47* br39 BR22* BR16 a3r9 a110 82-91 IM-4x-ER IM-6x-ER |
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First line: NON-CATALOG Instrument Amplifier Abstract: .. 50Ω High Power 100 to 900 MHz RF Instrument Amplifi er. Coaxial. TIA-900-10. CASE STYLE: AP176. Outline Dimensions inch mm. Maximum Ratings. Features. Operating Temperature 0°C to 55°C. Storage Temperature .. Tags: ER 900 datasheet abstract.. |
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First line: 5B1 bridge ER 900 Encapsulated Assemblies Series Inches Millimeters Notes 1.31 33.3 0.44 11.1 1.06 26.9 0.47 11.9 Abstract: .. »1Bt ER »2B1 ER »3B1 ER.4B1 ER+5B1 ER.6B1 ER*7B1 ER »8B1 ER »9B1 ERtlOBI ERH2B1 ER «14B1 ER .. 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 âTM¦Add F21 for Faston Terminal with Series .. Tags: ER 900 5B1 bridge datasheet abstract.. |
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First line: fibre 750 nm ER 900 tba 790 Rare-earth-doped fibers been manufacturing rare-earth-doped fibers more than years. inventory that currently have includes more than different types. offer Erbium, Ytterbium, Neodymium, Thulium, Terbium Samarium-doped fibers along with co-doped fibers like Erbium-Ytterbiu Abstract: .. Er 103 Er SM 0,16 4 μm 900 nm 3dB/m @ 980 nm 4 dB/m @ 1531 nm < 10 dB/km @ 1200 nm. Er 105 Er SM 0,16 4 μm 900 nm 5dB/m @ 980 nm 7 dB/m @ 1531 nm < 10 dB/km @ 1200 nm. Er 107 Er SM 0,16 4 μm 900 nm 7dB/m @ 980 nm 9 dB/m @ 1531 nm .. Tags: fibre 750 nm tba 940 tba 810 datasheet tba 810 tba 790 tba 1175 ER 900 datasheet abstract.. |
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First line: 256x128 256x12* 2R1G1B* dvi "led display" LED outdoor display Modular system outdoor applications 16mm Pixel pitch with oval LEDs Full-Color outdoor Display Specification P16-SIO Abstract: .. Pow er consumption max. Watts 900. Pow er consumption min. Watts 450. Cooling system 110-240 .. Tags: LED outdoor display dvi "led display" 2R1G1B* 256x12* 256x128 fans* ER 900 2R1G1B datasheet abstract.. |
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First line: BAV99W BAV99W Abstract: .. SHEN ZHEN YONG ER JIA ELECTRONIC CO.,LTD.. BAV99W. Tel: 0755-8324 8022 Fax 0755-8324 9522 Http .. 0.900. 0.000. 0.900. 0.200. 0.080. 2.000. 1.150. 2.150. 1.200. 0.260. 0°. Max. 1.100. 0.100. 1.000. 0.400. 0.150 .. Tags: BAV99W |
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First line: SPECIAL ASSEMBLIES (continued) Silicon darlingtoii amplifiers Abstract: .. .8 40 40 120 0.1-100 0.1-100 0.01-100 80 80 30 50 50 30 0.25 0.25 0.6 10 10 10 150 150 900 900 DIP K DIP K .. « er: t.. -U. '" W U > - x '" E uZ. x '" E .0. :..:: U 0.. « « 0. U. BFX 66 BFX 67 2N 997 2N 998 2N 999. NPN NPN NPN NPN .. Tags: datasheet abstract.. |
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First line: 8438 os til 78 ER 900 Til 160 GALAXEN Marts 1998 Magasin Matematik Lommeregnere NOGEN VIDE DET? Abstract: .. Det er let at forøge antallet af kast til 200, 300, 500 og 900 f.eks., idet vi dog hver gang skal huske at ændre på Ymax. Hvis man formindsker antallet af kast, skal man huske at slette L1. For at få et .. Tags: Til 160 til 78 8438 os TIL 143 maa 29 GE C 712 PN ER 900 AF 106 aar 07 1977/78 datasheet abstract.. |
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First line: PDC-900-16 PDC-900-16 Parameter Specifications Frequency Range Model: PDC-900-16 869-894 Pout, average (16Watts) Gain 40dB Gain flatness Abstract: .. 1/2 PDC-900-16 Parameter Specifications Frequency Range Model: PDC-900-16 869-894 Mhz Pout .. 1.70 + 27 V DC GND N/C M O 05 riAtr ivntn mw J IM/EM PREMI ER DEVICES. INC. I860 Hart02 Drive, San Jose .. Tags: datasheet abstract.. |
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First line: SG-401D.1 Supercedes SG-401C Abstract: .. Dielectric Withstanding Voltage at 25°C: ER-530-000, -006, -016 .. ER-530-000. TYPICAL Q vs FREQUENCY. Q. FREQUENCY MHz 1000 900 800 700 600 500 200 300 400 100. 3200 .. Tags: trimmer 3-30 pf TRIMMER 3-30 Sprague multiturn trimmer ER 900 SG-401D SG-401C |
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First line: ZHL-900-10W Coaxial NON-CATALOG ZHL-900-10W Abstract: .. 50Ω High Power 480 to 900 MHz. Amplifi er Coaxial. ZHL-900-10W. CASE STYLE: DDD338. Maximum Ratings. Features. Operating Temperature -20°C to 65°C. Storage Temperature -55°C to 100°C. DC Voltage +25V .. Tags: ZHL-900-10W ER 900 ZHL-900-10W |
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First line: thumbscrew ER 900 BLUE ORANGE BLACK YELLOW BROWN WHITE THUMBSCREW: 4-40 THREAD Abstract: .. .900. .629. 1.546. 12345678 .450. - --- 1-- -. 1.630. - -0-. THUMBSCREW: 4-40 THREAD. 1 - - - - - - - - - - BLUE 2 .. CUI STACK RE~ ER:E.;N C E~ N;.; Y _T.~:-~~;:-::~-:-::7""T=_ _.J.._"'; ;"r:~~~--:-~ F~- .. Tags: ER 900 thumbscrew datasheet abstract.. |
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First line: BGY284* BGY502 bgy284 BGY284 quad-band amplifier Measuring only mm2, BGY284 ultra-small, power-amplifier module with integrated power control loop. Designed 850, 900, 1800 1900 phones, delivers high performance reduced cost. Ultra-small power amplifier module with integrated power control loop Abstract: .. , GSM power-amplifi er module with an integrated power control loop. Designed for 850, 900, 1800 and 1900 MHz GSM phones, it delivers high performance at a reduced cost. General information The .. Tags: bgy284 BGY502 BGY284* datasheet abstract.. |
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First line: 2Way Power Divider Passive Integration Silicon Insertion Loss High Isolation Solder Good Balance Cost Free RoHS Compliant PD09C2 Abstract: .. 2 2W Wa ay y P Po ow we er r D Di iv vi id de er r P PD D0 09 9C C2 2. Product Features Application. • Passive .. Remarks MHz 900. Block Diagram & Pin Out Absolute Maximum Ratings. Output_2. Parameter Value .. Tags: ER 900 PD09C2 |
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First line: MS8G footprint v01.0408 Linear Driver Amps, This Driver Amplifier Designer's HMC-DK002 includes samples Hittite's most popular GaAs InGaP MMIC Amplifiers. table below summarizes features each products included this kit. Also featu included evaluation boards (assembled tested), which enable designer Abstract: .. Some of the Driver Amplifi er products in this kit can be tuned for several different Cellular .. in this kit are tuned for either 900 MHz or 1900 MHz bands. The designer is encouraged to refer to .. Tags: MS8G footprint Rogers 4350 HMC413QS16GE ER 900 datasheet abstract.. |
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First line: Hexadecimal Universal Hexadecimal Counter AS10H536 ASSIGNMENT (Top View) Abstract: .. er er ersal He sal He sal He sal He sal Hexadecimal xadecimal xadecimal xadecimal xadecimal .. minimum • 900 mW Max/Pkg No Load • Improved Noise Margin 150 mV Over Operating Voltage and .. Tags: ER 900 AS10H536 |
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First line: EDAL INDUSTRIES IN4050 do-9 EDAL INDUSTRIES JI/32" Ola. 3ms?lb DDODaib Ma*. Abstract: .. 1N4049 300 1N4050 400 1N4051 500 1N4052 600 1N4053 700 1N4054 800 1N4055 900 1N4056 1,000 EDAL .. 06512 TOLEIANCE3 UtfllESÃŒ OTHERWISE NOTED FRACTIONS ± DECIMAIS ± TITLE SILICON P0 ¥ER .. Tags: do-9 IN4050 EDAL INDUSTRIES datasheet abstract.. |
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First line: 1200V 100 A THYRİSTOR PHASE CONTROL THYRISTOR H250TBXX Symbol Characteristics Abstract: .. H HI IN ND D R RE EC CT TI IF FI IE ER RS S L LT TD D 1 of 6. PHASE CONTROL THYRISTOR H250TBXX. All dimensions .. 900. 1000. 1100. 1200. 0 0.5 1 1.5 2 2.5 3. Vt V It av. A. Gate Trigger Characteristics. 0.1. 1. 10. 100. 0.01 0 .. Tags: 1200V 100 A THYRÄ°STOR thyristor h 250 tb 15 Hirect phase control trigger DI 392 PULSE thyristor ER 900 H250TBXX |
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First line: 2sc4953 2SC5217 2sc5158 2SC5158* Transistors (Selection Guide Applications Functions) Switching Power Transistors (continued) Application VcBO VcEO Package (No.) (sat) ("A) (D43) (D46) r0-220(a) (D56) -220F(a) (D59) (D63) TO-220D (D62) Type (D47) Type (D48) Type (D41) TOP-3(a) (D64) TOP-3F (D67 Abstract: .. 400 15 <1 10 2A 0.3 2SC3874 ing 800/900 800/900 800/900 800 800/900 500 500 500 500 500 1.5 3 5 5 7 A A A .. Mate^ CopY^tec^g^ge^EgctiQ^ig^cC^er^^fl _ PfeOTaSOIlÃŒC Transistors Selection Guide by .. Tags: 2SC5158* 2sc5158 2SC5217 2sc4953 datasheet abstract.. |
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First line: PT370/PT371/PT372 PT370/PT371 PT372 Faatures compact, resin stem type Acceptance PT370 TYP. PT371 TYP. PT372 TYP. Single phototransistor output PT370/PT371 Darlington phototransistor output PT372 Compact, Stem Phototran~tor Abstract: .. P a r a m e t er Symbol Rating Unit. Collector -emitter voltage 35 v. Emitter -collector voltage 6 v .. ‘ \ 40 /’ \, 20 \0400 600 700 800 900 1000 1100Wavelength rim 1000500200 100 . 20 0 52 10 20 50 100 .. Tags: DARLINGTON phototransistor 14 PT370 PT371 PT372 |
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First line: DB-900-60W 869-894 using PD57070S LdmoST FAMILY Abstract: .. The DB-900-60W is designed in cooperation with Européenne de Télécommunications S.A www .. SUBSTRATE TEFLON-GLASS Er = 2.55. BACK SIDE COPPER FLANGE 2 mm THICKNESS. CERAMIC CHIP .. Tags: PD57070S |
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First line: Super Flux Super Blue OSB56LZHA1D Features Outline Abstract: .. http://www.optosupply.com VER A.0. S Su up pe er r F Fl lu ux x S Su up pe er r B Bl lu ue e L LE ED D .. 750 900 - mcd. 50% Power Angle 2θ1/2 I F=30mA - 100 - deg. *1 Tolerance of dominant wavelength is +1nm .. Tags: ER 900 OSB56LZHA1D |
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First line: SERIES Ceramic Chip Trimmer Capacitors GENERAL SPECIFICATIONS Part Number Capacitance (pF) Minimum Maximum JR030 +50% Black JR060 +50% Blue 1000 2.05 JR080 +50% Violet -750 1500 JR100 +100% 10.0 None 1500 Abstract: .. P Pa ar rt t N Nu um mb be er r J JR R0 03 30 0 J JR R0 06 60 0 J JR R0 08 80 0 J JR R1 10 00 0 J JR R1 15 50 0 J JR R2 20 00 0 .. Ceramic Tipped: TT-900. 100 FORD ROAD • SUITE 100-10 • DENVILLE, NEW JERSEY 07834 • PHONE: 973 .. Tags: JR030 JR060 JR080 JR100 |
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First line: C 12 PH diode C 12 PH ph sensor ph sensor characteristics LM35 application circuits op-amp with pdf Designing with Electrodes Application Note AN-1852 electrode measures hydrogen (H+) activity produces electrical potential voltage. operation electrode based principle that electric potential develop Abstract: .. and 900 fA at 85°C over the entire input common-mode voltage range of the amplifi er. With such a low input-bias current, any PCB parasitic-leakage current which reaches the input pins of the device .. Tags: LM35 application circuits op-amp with pdf ph sensor characteristics C 12 PH C 12 PH diode sensor LM35 datasheet ph sensor LM35 sensor lm35 Precision Centigrade Temperature Sensors LM35 application circuits with pdf LM35 application circuits LM35 application lm35 ER 900 AN-1852 |
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First line: cificatio IGBT Driver Prelimina Data tures effective IGBT iver high current modu sitive nega tive gate voltages High curren vanic isolation circuit protec tion dervoltage lockout Isolated failure feedba cycle from 100% High v/dt immuni 50.000 input feed back, versatile link devices suppl cessary hig Abstract: .. s Pa r a m e t er. Condi t. ions. m i. n.. t yp. m ax. V CC. Sup p. l y vol. t age. Pi n. 15. t o GND. 13. 16. V DC. I CC. Sup p. l y cu. r r. e .. 160 900. mA mA. P O. U T. Ou t. pu t. pow e. r. V C. C =15V. , ave. r age value. 2 x 5 W. V ISO. I solation vol. t age. 1 m i. n ., I IS. O .. Tags: ER 900 datasheet abstract.. |
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First line: Preliminary Data Features Cost effective IGBT driver high current IGBT modules Positive negative gate voltages High gate currents Galvanic isolation 7500 Short circuit protection, undervoltage lockout Isolated failure feedback Duty cycle from 100% High dv/dt immunity min. 50.000 Fibre optic input fe Abstract: .. s Pa r a m e t er. Condi t. ions. m i. n.. t yp. m ax. V CC. Sup p. l y vol. t age. Pi n. 15. t o GND. 13. 16. V DC. I CC. Sup p. l y cu. r r. e .. 160 900. mA mA. P O. U T. Ou t. pu t. pow e. r. V C. C =15V. , ave. r age value. 2 x 5 W. V ISO. I solation vol. t age. 1 m i. n ., I IS. O .. Tags: ER 900 for2500 3300V |
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First line: Preliminary Data Features Cost effective IGBT driver high current IGBT modules Positive negative gate voltages High gate currents Galvanic isolation 7500 Short circuit protection, undervoltage lockout Isolated failure feedback Duty cycle from 100% High dv/dt immunity min. 50.000 Fibre optic input fe Abstract: .. s Pa r a m e t er. Condi t. ions. m i. n.. t yp. m ax. V CC. Sup p. l y vol. t age. Pi n. 15. t o GND. 13. 16. V DC. I CC. Sup p. l y cu. r r. e .. 160 900. mA mA. P O. U T. Ou t. pu t. pow e. r. V C. C =15V. , ave. r age value. 2 x 5 W. V ISO. I solation vol. t age. 1 m i. n ., I IS. O .. Tags: ER 900 IGD-1-DT2 |
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First line: SYNERGY D"LATCH SY100S350 Max. transparent propagation delay 900ps Min. Master Reset Enable pulse widths 100ps min. -98mA protection 2000V Industry standard 100K levels Extended supply voltage option: -4.2V -5.5V Voltage temperature compensation improved noise immunity Internal input pull-down Abstract: .. D2 Dl Do ->--] D er 1 — D er 1 D er 1 D -er 1 D er 1 D "ER 1 — Qs Qs Q4 Q4 QS Q3 Q2 Qa Q1 Qi Qo Qo TRUTH TABLE'1 .. 450 1250 ps tTLH tTHL Transition Time 20% to 80%, 80% to 20% 300 900 300 900 300 900 ps ts Set-up Time .. Tags: datasheet abstract.. |
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First line: thyristor H650TBXX Phase Control Thyristor PHASE CONTROL THYRISTOR H650TBXX Symbol Characteristics Abstract: .. H HI IN ND D R RE EC CT TI IF FI IE ER RS S L LT TD D 1 of 6. PHASE CONTROL THYRISTOR H650TBXX. All dimensions .. R RE EC CT TI IF FI IE ER RS S L LT TD D 3 of 6. PHASE CONTROL THYRISTOR H650TBXX. Max non repetitive Surge .. Tags: Phase Control Thyristor thyristor H650TBXX ER 900 H650TBXX |
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First line: u9 wc transistor marking T2 SSOP5 transistor wm a 3pin wy 636 transistor BD45XXXG BD46XXXG VOLTAGE DETECTOR with counter timer BD45XXXG BD46XXXG Abstract: .. ER pin "L" voltage ER pin input current. "H" transmission delay time. Hysteresis voltage .. .100 4.000 3.900 3.800 3.700 3.600 3.500 3.400 3.300 3.200 3.100 3.000 2.900 2.800 2.700 2.600 2 .. Tags: SSOP5 transistor marking T2 u9 wc wy 636 transistor vq 2.3 v6 transistor wm a 3pin marking wg marking w9 marking 5pin ER 900 diode marking w8 bd46311 BD45271 "Voltage Detector IC" BD45XXXG BD46XXXG |
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First line: RFBPF3225150A4T LTCC Multi Layer Chip Band Pass Filter RFBPF3225150A4T Series Patent Pending Band 2.4GHz Application Abstract: .. ay ye er r C Ch hiip p B Ba an nd d P Pa as ss s F Fiilltte er r. ‐ ‐ R RF FB BP PF F3 32 22 25 51 15 50 0A A4 4T T S Se er .. 30 @ 900 MHz. 30 @ 1850 MHz. 20 @ 2100 MHz. 30 @ 4800 MHz. *Note1: Rated power 5W MAX. *Note2: Maximum .. Tags: RFBPF3225150A4T RFBPF3225150A4T |
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First line: LTCC Multi Layer Chip Band Pass Filter RFBPF3225150A5T Series Patent Pending Band 2.4GHz Application Abstract: .. ay ye er r C Ch hiip p B Ba an nd d P Pa as ss s F Fiilltte er r. ‐ ‐ R RF FB BP PF F3 32 22 25 51 15 50 0A A5 5T T S Se er .. 30 @ 900 MHz. 30 @ 1850 MHz. 20 @ 2100 MHz. 30 @ 4800 MHz. *Note1: Rated power 5W MAX. *Note2: Maximum .. Tags: RFBPF3225150A5T |
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First line: Ferroxcube ER35W cores accessories Abstract: .. ER cores and accessories ER35W. CORE SETS. Effective core parameters. SYMBOL PARAMETER VALUE .. Σ I/A core factor C1 0.900 mm−1. Ve effective volume 9548 mm3. Ie effective length 92.7 mm. Ae .. Tags: er35* ER 900 core ferroxcube ER35W |
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First line: Product Features High Output Power P1dB 40dBm(Typ.)@2.14GHz High Efficiency High Power Gain G1dB 17dB(Typ.)@900MHz G1dB 13dB(Typ.)@2.14GHz High Linearity Hermetically sealed package HFET Description RT240PD Application Repeater Sub-Systems Base Station Converter IMT-2000 MMDS Wi-Fi, Wi-max Abstract: .. ry y 1 10 0W W R RT T2 24 40 0P PD D P Po ow we er r T Tr ra an ns si is st to or r. z All specifications may change .. Frequency MHz 900 1800 2140 2640 3500. Small Signal Gain dB 17 14 13 12 10. VSWR Input / Output .. Tags: RT240PD* ER 900 1608 B 100NF RT240PD |
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First line: Type300Tubular style mounting range premium grade aluminium electrolytic capacitors designed direct p.c. board mounting small switching regulators other high frequency applications, where proof test 2000 hours with full rated voltage rated ripple current required. Standard tolerances +75, +50, other Abstract: .. Case Code D L 1nches mm Inches mm * EM 0.500 12.7 1.040 26.4 * iEN 0.500 12.7 1.335 33.9 * ER 0.500 12 .. 86 .40 0.14 .30 900 EN .17 .110 .47 .70 120 EN .62 .30 0.19 .39 1,200 ER .12 .075 .63 .94 180 ER .43 .20 .. Tags: datasheet abstract.. |
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First line: R704 PHILIPS MODULATORLAMP Deze eindversterkerlamp gebruikt worden modulatorlamp voor anode-spannings-(Heising) modu-latie. maximale anodedissipa-tie niet worden overschreden. normale anodespan- ning anodestroom hoogstens bedragen, hetgeen negatieve rooster- Abstract: .. Schaal 2 : 3 Indien smoorspoelkoppeling wordt toegepast zijn er voor het moduleeren van een TC .. 900 mA 250—450 V 25 W 35 W ca. 3,8 ca. 2,1 mA/V ca. 1800 Q 58 mm 152 mm Gloeispanning .. Tags: R704 datasheet abstract.. |
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First line: 1358 TRANSISTOR S6-590-65-4A S6-590 (silicon) SILICON POWER TRANSISTOR designed 13.6 Volt large-signal amplifier applications industrial commercial equipment operating MHz. Specified 13.6 Volt, Characteristics -Output Power Watts Minimum Gain 5.05 Efficiency Characterized with Series Equivalent Larg Abstract: .. % FIGURE 1 - 900 MHz TEST CIRCUIT. Microstrip Board C1.4 1.0-20 pF, JOHANSON S501 C2.3.5.6 1.0-10 .. TANTALUM L1.2 Ferrite Bead FERROXCUBE S6-590-65-4A on 1/2", #22 AWG Board - G lass Teflon, eR - 2 .. Tags: S6-590 S6-590-65-4A 1358 TRANSISTOR datasheet abstract.. |
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First line: ERD65-090(30A) Features High Voltage i&Ji^/ET^tt forward Voltage drop. small Package Applications Abstract: .. Conditions Min. Typ. Max. Units & 1 « 1 E Vrrm IR = 1mA 900 V îË M ÖfE Ir Vr = 800V 100 M Ml € EL Vp IF .. 900 100. 1.4 4.4 2.5. V "A V 'CjW. "s. B-27. ER D65-090 30A .~t1!1!!Ml. : Characteristics 100. I Tj =25 .. Tags: datasheet abstract.. |
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First line: ERD65-090(30A) Features High Voltage i&Ji^/ET^tt forward Voltage drop. small Package Applications Abstract: .. Conditions Min. Typ. Max. Units & 1 « 1 E Vrrm IR = 1mA 900 V îË M ÖfE Ir Vr = 800V 100 M Ml € EL Vp IF .. 900 100. 1.4 4.4 2.5. V "A V 'CjW. "s. B-27. ER D65-090 30A .~t1!1!!Ml. : Characteristics 100. I Tj =25 .. Tags: datasheet abstract.. |
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First line: sumitomo type 35se BATTERY TESTER bp-01 BATTERY TESTER sumitomo splicer fusion splicer Lucent Technologies/Sumitomo Single Fiber Fusion Splicing Product Line Splicing Item Note: Comcode Description Item Code Type 35SE-KIT-2 FCP-3 FCP-BL SPL-1 HP-5 FPS-1 EL-1 JR-11 BP-01 Precision Fiber Cleaver Repla Abstract: .. -11 900 μm and 250 μm Combination Jacket Remover. 9 107 241 192 BP-01 Battery Charger/Battery .. 7 107 241 093 ER-5 Replacement Electrode for the Type 62 Fusion Splicer. 8 107 241 051 FAC-24 .. Tags: fusion splicer sumitomo splicer BATTERY TESTER BATTERY TESTER bp-01 sumitomo type 35se splicing* diode 107 charger hp 107 diode FCP-3 SPL-1 FPS-1 |
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First line: "IF Amplifiers" TUNG-SOL TRIPLE GRID REMOTE -OFF AMPLIFIER POTENTIAL CATHODE HEATER VOLTS AMPERE GLASS BULB SMALL BASE Abstract: .. TO CATHODE AT SOCKET PLATE 900-1 COPYRIGHT 1940 BY TUNG-SOL LAMP WORKS INC. RADIO TUBE DIVISION .. TRIPLE GRID REMOTE CUT - OFF AMPLI F I ER. ST-12C. UNIPOTENTIAL CATHODE HEATER 6.3 VOLTS 0.3 AMPERE .. Tags: "IF Amplifiers" datasheet abstract.. |
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First line: h505c* thyristor control circuit PHASE CONTROL THYRISTOR H505CHXX Symbol Characteristics Abstract: .. H HI IN ND D R RE EC CT TI IF FI IE ER RS S L LT TD D 1 of 6. PHASE CONTROL THYRISTOR H505CHXX. All dimensions .. 900. It av P t av - W. 600. 120 180 0. DC. Maximum Permissible Case Temp. 0. 20. 40. 60. 80. 100. 120. 140. 0 50 100 .. Tags: thyristor control circuit h505c* thyristor phase control rectifier 505a H505CHXX |
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First line: PHASE CONTROL THYRISTOR H55TBXX Symbol Characteristics Conditions (0C) Value Unit BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage Repetitive peak off-stage voltage Repetitive peak reverse current Repetitive peak off-state current Rep. rate change voltage VRRM VRRM 67%VD Abstract: .. ITSM Surge on-state current 900 A. I2t I2t. Sine wave, 10mS without reverse voltage 125. 4050 A2S. VT .. H HI IN ND D R RE EC CT TI IF FI IE ER RS S L LT TD D 1 of 6. PHASE CONTROL THYRISTOR H55TBXX. All dimensions .. Tags: H55TBXX |
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First line: 955A thyristor phase control rectifier thyristor control circuit PULSE thyristor H955CH* PHASE CONTROL THYRISTOR H955CHXX Symbol Characteristics Abstract: .. H HI IN ND D R RE EC CT TI IF FI IE ER RS S L LT TD D 1 of 6. PHASE CONTROL THYRISTOR H955CHXX. All dimensions .. 900. 1000. 1100. 1200. 1300. 1400. 1500. 1600. It av P t av - W 600. 1200. 1800. DC. Maximum Permissible Case .. Tags: H955CH* PULSE thyristor thyristor control circuit thyristor phase control rectifier 955A H955CHXX |
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First line: DIODES INCORPORATED "D~l 2fl4fl?clB ------- nuursrunH M4iJ SCHOTTKY BARRIER RECTIFIERS 'T-ov^ Sfl4fl7c]3 operating temperature range STORAGE TEMPERATURE RANGE TYPE Maximum Peak Reverse -Voltage Maximum Average .Rectified Current Half-Wave Resistive Load 60Hz Maximum Forward" Peak Surge Cur Abstract: .. SRM1220 20 120 100 900 20 25 120 0.89 SRM1230 30 120 100 900 20 25 120 0.89 SRM1235 35 120 100 900 20 25 .. SCHOTTKY BARRI ER RECTI FIERS ~ . ' ' ,-0 ~. . OPERATING TEMPERATURE RANGE 20 to 45V _65° C to +125° .. Tags: datasheet abstract.. |
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First line: plus Opto tel: 01942 671122 fax: 01942 671133 mail: sales@plusopto.co.uk LIGITEK Optoelectronic Specialists PLUS OPTO LTD, BIS, MOSS EST, ST.HELENS LEIGH. LANCASHIRE, 5.0mm HIGH INTENSITY LAMPS LVX3333/HO Series Typical radiation Abstract: .. 20 1.5 2.4 900 3,400 38 LURF3333/HO AIGalnP Red Water Clear 630 20 1.5 2.4 900 5,000 38 LVG3333/HO .. . Absolute maximum ratings Ta=25'c RED PARAMET ER. GREEN. YELLOW. ORANGE. REMARK UNIT. HRF 40 200 .. Tags: datasheet abstract.. |
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First line: HMC-APH478 GaAs HEMT MMIC WATT POWER AMPLIFIER, Abstract: .. The HMC-APH478 is a two stage GaAs HEMT MMIC 1 Watt Power Amplifi er which operates between 18 and .. Supply Current Idd1+Idd2 900 mA. [1] Unless otherwise indicated, all measurements are from .. Tags: datasheet abstract.. |
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First line: HMC-APH460 GaAs HEMT MMIC WATT POWER AMPLIFIER, 31.5 Abstract: .. Electrical Specifi cations[1], TA = +25° C, Vdd1 = Vdd2 = 5V, Idd1 + Idd2 = 900 mA [2] Typical .. two stage GaAs HEMT MMIC 0.5 Watt Power Amplifi er which operates between 27 and 31.5 GHz. The HMC .. Tags: datasheet abstract.. |
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First line: rights strictly reserved. Reproduction issue third parties form whatever permitted without written authority from proprietors. ;n> Abstract: .. Reproduction er issue to third parties in any form whatever is not permitted without written .. 900 . .960MHz min 20dB max OJ5dB max 1.25 300W cw -10 .. +60 N 3xfemalel 0 [ IsolatIOn InsertIOn .. Tags: datasheet abstract.. |
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