ENA0551
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ENA0551 - ENA0551
Ordering number ENA0551
3LP04MH
P-Channel Silicon MOSFET
3LP04MH
Features
General-Purpose Switching Device Applications
1.5V drive.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (900mm2!0.8mm) Conditions Ratings -200 -800 +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) td(off) Conditions ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=-100µA VDS=-10V, ID=-100mA ID=-100mA, VGS=-4V ID=-50mA, VGS=-2.5V ID=-10mA, VGS=-1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. Ratings -0.4 -1.4 Unit
Marking
Continued next page.
SANYO Semiconductor products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest before usingany SANYO Semiconductor products described contained herein such applications. SANYO Semiconductor assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO Semiconductor products described contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806PE TC-00000230 A0551-1/4
3LP04MH
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Conditions VDS=-10V, VGS=-4V, ID=-200mA VDS=-10V, VGS=-4V, ID=-200mA VDS=-10V, VGS=-4V, ID=-200mA IS=-200mA, VGS=0V Ratings 0.58 0.17 0.12 -0.89 -1.2 Unit
Package Dimensions
unit (typ) 7019A-003
0.25 0.15
Switching Time Test Circuit
-100mA RL=150 VOUT VDD= -15V
0.02
PW=10µs D.C.1%
0.25 0.65
3LP04MH
0.85
0.07
Gate Source Drain SANYO MCPH3
Rg=5k
-200
-5.0 -4.0
-300
VDS= -10V
75°C
-160
-250
Drain Current,
Drain Current,
-0.5 -1.0
-180
-140 -120 -100
-200
-6.0
-150
-8.0
VGS= -1.5
-100
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.5 -2.0 -2.5 -3.0 IT11699
Drain-to-Source Voltage,
IT11698
RDS(on)
Gate-to-Source Voltage,
RDS(on)
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
-100mA -50mA -10mA
-1.5
50mA
-2.5V
-4.0V
Gate-to-Source Voltage,
IT11700
Ambient Temperature,
IT11701
A0551-2/4
3LP04MH
1000
VDS= -10V
Forward Transfer Admittance,
-1000 -100
VGS=0V
Source Current,
-1.0
-1.0 -100
Drain Current,
7-1000 IT11702
-0.2
-0.4
-0.6
25°C
-0.8
75°C
-1.0
-1.2
-1.4
Time
Ciss, Coss, Crss
f=1MHz
Diode Forward Voltage,
IT11703
VDS= -15V VGS=
Switching Time, Time
1000
Ciss
Ciss, Coss, Crss
(off)
Coss
td(on)
Crss
-100 IT11705
Drain Current,
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
IT11704
Drain-to-Source Voltage,
Gate-to-Source Voltage,
VDS= -10V -200mA
-1.0 -0.1
IDP= -800mA
Drain Current,
10µs
-200mA
Operation this area limited RDS(on).
IT11706
-0.01 -0.1
Ta=25°C Single pulse Mounted ceramic board (900mm2!0.8mm)
-1.0
Total Gate Charge,
Drain-to-Source Voltage,
IT11707
Allowable Power Dissipation,
Ambient Temperature,
IT11708
A0551-3/4
3LP04MH
Note usage Since 3LP04MH MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO Semiconductor products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Semiconductor Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO Semiconductor products (including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Semiconductor Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO Semiconductor product that intend use. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO Semiconductor believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties.
This catalog provides information November, 2006. Specifications information herein subject change without notice.
A0551-4/4
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