| Fulltext Datasheet Results |
1 - 50 of about 787 for DIODE T25.. |
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First line: iss120* TDA7514TR fm/STEREO FM PLL MODULATOR DIODE T25 4 DIODE T25 4 do TDA754 SINGLE-CHIP FM/AM TUNER WITH STEREO DECODER AUDIO PROCESSOR Abstract: .. Gqacmp3mp Gain output level3 for multipath T25<5:4>=11 +4 dB. Gqacmp4mp Gain output level4 for .. Adjusted voltage: without diode connected: Vout = α /128 Vt. 33/74. TDA7514. Table 22 .. Tags: fm/STEREO FM PLL MODULATOR TDA7514TR iss120* ISS 99 DIODE T25 4 do DIODE T25 4 dev 23d TDA7514 |
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First line: DIODE T25 DIODE T25 4 do DIODE T25 4 R5535V-E2-FB Power Switch Express Card OUTLINE Abstract: .. falling edge of CLKSTABLE#, t25+t27<t20 is true, therefore, the rising delay time of. PERST# is .. * There is a parasitic diode between source and drain of the switch transistors. Refer to the .. Tags: DIODE T25 4 do DIODE T25 4 DIODE T25 R5535V-E2-FB |
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First line: 1n5711 equivalent 1n5711 DIODE T25 4 do 1N5711 spice DIODE T25 4 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes General Purpose Applications Description/Applications Abstract: .. -2810 or 1N5712 Schottky Diode. 100. 10. 1.0. 0.1. 0.01. I F - FORWARD CURRENT mA 0 0.4 0.2 0.6 0.8 1.0 1 .. RFD Reel Dimensions for T25/T50. Figure 13. Tape Dimensions and Product Orientation. 200 mil .. Tags: 1N5711 spice 1n5711 1n5711 equivalent DIODE T25 4 do DIODE T25 4 DIODE T25 diode 5082-2800 datasheet 5082-2835 5082-2826 5082-2811 5082-2810 5082-2805 5082-2804 5082-2800 SERIES DATASHEET 1N5711 1N5712 |
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First line: FM600TU-2A DIODE T25 4 do DIODE T25 4 FM600TU-2A HIGH POWER SWITCHING INSULATED PACKAGE FM600TU-2A Abstract: .. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5 .. T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 .. Tags: FM600TU-2A DIODE T25 4 do DIODE T25 4 DIODE T25 FM600TU-2A |
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First line: "MOSFET Module" DIODE T25 4 do DIODE T25 4 FM600TU-07A HIGH POWER SWITCHING INSULATED PACKAGE FM600TU-07A Abstract: .. VDD = 48V, ID = 300A, VGS ± 15V RG = 4.2Ω, Inductive load IS = 300A. IS = 300A, VGS = 0V MOSFET part 1/6 .. T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 .. Tags: "MOSFET Module" FM600TU-07A DIODE T25 4 do DIODE T25 4 DIODE T25 "MOSFET Module" FM600TU-07A |
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First line: DIODE T25 4 do DIODE T25 4 FM400TU-07A HIGH POWER SWITCHING INSULATED PACKAGE FM400TU-07A Abstract: .. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5 .. T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 .. Tags: DIODE T25 4 do DIODE T25 4 DIODE T25 FM400TU-07A |
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First line: DIODE T25 DIODE T25 4 do DIODE T25 4 FM400TU-3A HIGH POWER SWITCHING INSULATED PACKAGE FM400TU-3A Abstract: .. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5 .. T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 .. Tags: DIODE T25 4 do DIODE T25 4 DIODE T25 FM400TU-3A |
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First line: DIODE T25 4 DIODE T25 4 do FM200TU-2A HIGH POWER SWITCHING INSULATED PACKAGE FM200TU-2A Abstract: .. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5 .. T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 .. Tags: DIODE T50 DIODE T25 4 do DIODE T25 4 DIODE T25 48v 100a "MOSFET Module" FM200TU-2A |
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First line: "MOSFET Module"fm600tu-3a "MOSFET Module" DIODE T25 4 do DIODE T25 4 FM600TU-3A HIGH POWER SWITCHING INSULATED PACKAGE FM600TU-3A Abstract: .. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5 .. T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 .. Tags: "MOSFET Module" "MOSFET Module"fm600tu-3a DIODE T25 4 do DIODE T25 4 DIODE T25 FM600TU-3A |
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First line: T25 -4-KO DIODE T25 4 do DIODE T25 4 FM400TU-2A HIGH POWER SWITCHING INSULATED PACKAGE FM400TU-2A Abstract: .. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5 .. T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 .. Tags: T25 -4-KO up/"MOSFET Module" FM400TU-2A DIODE T25 4 do DIODE T25 4 DIODE T25 "MOSFET Module" FM400TU-2A |
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First line: DIODE T25 4 DIODE T25 4 do FM200TU-3A HIGH POWER SWITCHING INSULATED PACKAGE FM200TU-3A Abstract: .. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5 .. T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 .. Tags: DIODE T25 4 do DIODE T25 4 DIODE T25 FM200TU-3A |
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First line: F68L DIODE T25 4 DIODE T25 4 do F65L* DIODE F65L Ordering number ENA0646 Monolithic Linear LA73033M Abstract: .. T25. Measure the output pedestal clamp voltage 2.4 2.5 2.6 V 330 0 0 3.5 00000100 00000000 RGB .. Diode clamp is applied to the input. when there is no signal at pin 1 or. when the pin is not selected .. Tags: DIODE F65L F65L* F68L SN68 sn27 IC/ ADP23 F65L F58E f27l* DIODE T25 4 do DIODE T25 4 DIODE T25- DIODE T25 ct60 ENA0646 |
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First line: diode 5082-3080 in5719 DIODE T25 4 do DIODE T25 4 Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Diodes Switching Attenuating Harmonic Distortion Large Dynamic Range Series Resistance Abstract: .. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current .. 5082-3xxx#T25/1N57xx#T25 2500 Tape & Reel. 5082-3xxx#T50/ 1N57xx#T50 5000 Tape & Reel. 5082 .. Tags: in5719 diode 5082-3080 DIODE T25 4 do DIODE T25 4 DIODE T25 diode 5082-3001 diode 5082- 3039 5082-3081 5082-3080 5082-3039 5082-3001 5082 1N5767 1N5719 1N5767 |
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First line: t125 switch DIODE T25 4 do DIODE T25 4 50-500 0.75 Insertion Loss Isolation Non-Reflective CMOS Driver MODEL DS0073 Abstract: .. 11 12 14 15 16 17 4 18 20 21 22 23 24 GND CONT1 GND "1" tr GO 5 S en > -> 1.4 1.00 1.3 - .75 O co r 80 r -60 1.2 â– 1 .. 1.0 0.75 51 1.18/1 1.12/1 50 3 300 640 t60 t35 t67 +43 +23 t25 ±2 +2 1.0 1.25/1 1.25/1 OHMS 5 ~SEC ~A ~A .. Tags: DIODE T25 4 DIODE T25 4 do t125 switch datasheet abstract.. |
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First line: DIODE T25 4 do DIODE T25 4 APTM50AM25FT VDSS 500V RDSon 25°C 149A 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Abstract: .. .5A 25 mΩ VGS th Gate Threshold Voltage VGS = VDS, ID = 8mA 2 4 V IGSS Gate ‐ Source Leakage Current .. = 15V VBus = 250V ID = 149A RG = 0.22 Ω 10 ns Source - Drain diode ratings and characteristics Symbol .. Tags: DIODE T25 4 do DIODE T25 4 DIODE T25 C-111 APTM50AM25FT |
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First line: DIODE T25 4 do DIODE T25 4 Chip Switching Diode CDSF4148 List Abstract: .. 0 .4 .8 1.2 1.6 2.0. T =25 C J. FIG.2 - TYPICAL DIODE CAPACITANCE. REVERSE VOLTAGE, V DIODE .. T o t25 C to Peak. Ramp-down. Temperature. Time. Profile Feature Soldering Condition. oAverage ramp .. Tags: DIODE T25 4 do DIODE T25 4 CDSF4148 |
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First line: SMD MARKING CODE 13 melf diode marking DIODE T25 4 DIODE T25 4 do DIODE SMD T25 Glass Sealed Switching Diode MCL4148 List Abstract: .. 0 .4 .8 1.2 1.6 2.0. T =25 C J. FIG.2 - TYPICAL DIODE CAPACITANCE. REVERSE VOLTAGE, V DIODE .. T o t25 C to Peak. Ramp-down. Temperature. Time. Profile Feature Soldering Condition. oAverage ramp .. Tags: melf diode marking SMD MARKING CODE 13 SOP18 Micro MELF DIODE T25 4 do DIODE T25 DIODE SMD T25 MCL4148 |
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First line: CDSU4148 DIODE T25 4 DIODE T25 4 do Chip Switching Diode CDSU4148 List Abstract: .. 0 .4 .8 1.2 1.6 2.0. T =25 C J. FIG.2 - TYPICAL DIODE CAPACITANCE. REVERSE VOLTAGE, V DIODE .. T o t25 C to Peak. Ramp-down. Temperature. Time. Profile Feature Soldering Condition. oAverage ramp .. Tags: DIODE T25 4 do DIODE T25 4 DIODE T25 cdsu4148 CDSU4148 |
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First line: T25 diode DIODE T25 4 DIODE T25 4 do APTM20AM05FT VDSS 200V RDSon 25°C 333A 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Abstract: .. Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for .. ,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 .. Tags: T25 diode DIODE T25 4 do APTM20AM05FT |
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First line: DIODE T25 4 DIODE T25 4 do APTGT150X120TE3 Phase bridge Abstract: .. Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 kΩ B 25/50 T25 = 298.16 K 3375 K .. APT website ‐ http://www.advancedpower.com 3 - 4. Thermal and package characteristics Symbol .. Tags: DIODE T25 4 do DIODE T25 APTGT150X120TE3 |
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First line: DIODE T25 4 DIODE T25 4 do APTGF150X60TE3 VCES 600V 150A 80°C Application Motor control Abstract: .. Voltage VGE =15V IC = 200A Tj = 125°C 2.2 V VGE th Gate Threshold Voltage VGE = VCE , IC = 4 mA 4.5 6.5 .. Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 kΩ B 25/50 T25 = 298.16 K 3375 K .. Tags: DIODE T25 4 do we 1 c t25 DIODE T25 4 DIODE T25 APTGF150X60TE3 |
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First line: Thermistor 200 DIODE T25 4 do DIODE T25 4 APTGF125X60TE3 VCES 600V 125A 80°C Abstract: .. IC = 150A RG = 1.5Ω 4.6 mJ Reverse diode ratings and characteristics Symbol Characteristic Test .. Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 kΩ B 25/50 T25 = 298.16 K 3375 K .. Tags: Thermistor 200 DIODE T25 4 do DIODE T25 4 APTGF125X60TE3 |
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First line: DIODE T25 4 do DIODE T25 4 APTGT75X120TE3 Phase bridge Trench IGBT® Power Module Application Motor control VCES 1200V 80°C Abstract: .. Inductive Switching 125°C VGE = ±15V VBus = 600V IC = 75A RG = 4.7Ω. 9.5 mJ. Reverse diode ratings .. B 25/50 T25 = 298.16 K 3375 K. . . . . . . . -. = T T. B. R. RT. 1 1. exp. 25. 50 / 25. 25. T: Thermistor temperature .. Tags: RT Thermistor S 234 DIODE T25 4 do DIODE T25 4 DIODE T25 APTGT75X120TE3 |
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First line: DIODE T25 4 DIODE T25 4 do APTGS50X170TE3 VCES 1700V 80°C Abstract: .. VGE th Gate Threshold Voltage VGE = VCE , IC = 2.5 mA 4.5 6.5 V. IGES Gate ‐ Emitter Leakage Current .. Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max .. Tags: DIODE T25 4 do DIODE T25 APTGS50X170TE3 |
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First line: IGBT 500A 1200V DIODE T25 4 do DIODE T25 4 APTGF50X120TE3 Application Motor control VCES 1200V 80°C Abstract: .. kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated .. ,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 .. Tags: DIODE T25 4 do IGBT 500A 1200V DIODE T25 4 DIODE T25 APTGF50X120TE3 |
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First line: DIODE T25 4 DIODE T25 4 do APTGT100X120TE3 Phase bridge Trench IGBT® Power Module Application Motor control VCES 1200V 100A 80°C Abstract: .. kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated .. ,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 .. Tags: DIODE T25 4 do DIODE T25 4 DIODE T25 APTGT100X120TE3 |
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First line: DIODE T25 4 do DIODE T25 4 1N4448 List Abstract: .. 0 .4 .8 1.2 1.6 2.0. T =25 C J. FIG.2 - TYPICAL DIODE CAPACITANCE. REVERSE VOLTAGE, V DIODE .. 25 o t25 C to Peak. Ramp-down. Temperature. Time. Profile Feature Soldering Condition. oAverage .. Tags: DIODE T25 4 DIODE T25 4 do 1N4448 |
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First line: MIL-STD-750D* 1N4148 chip DIODE T25 4 do DIODE T25 4 List Abstract: .. 0 .4 .8 1.2 1.6 2.0. T =25 C J. FIG.2 - TYPICAL DIODE CAPACITANCE. REVERSE VOLTAGE, V DIODE .. 25 o t25 C to Peak. Ramp-down. Temperature. Time. Profile Feature Soldering Condition. oAverage .. Tags: DIODE T25 4 do MIL-STD-750D* DIODE T25 4 DIODE 1N4148 1n4148 r 1N4148 chip 1N4148 75V 150mA Diodes datasheet abstract.. |
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First line: NX DIODE SM smew* DIODE T25 4 do DIODE T25 4 FUJI 6RI100G-120/160 6-Pack Diode 1200/1600 POWER DIODE MODULE Outline Drawings terminals arid mounting plate electrically isolated. These modules installed same cooling other modules, thus saving installation space cost-effective feature. diode chips coa Abstract: .. CZD ri to TJ o §o >o5 o o <D FUJI 6-Pack Diode 0,02 0.03 0.04 0.050.06 0.08 0.1 0.2 0.3 0.4 0 5 0.6 0.8 .. . . 2238792 0005601 T25 . . 6-Pack Diode. 1200/1600 V 100A. · Characteristic curves. 130. 120. E u ~ liD .. Tags: DIODE T25 4 DIODE T25 4 do smew* NX DIODE SM datasheet abstract.. |
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First line: DIODE T25 4 do DIODE T25 4 APTGS75X170TE3 VCES 1700V 80°C Abstract: .. VGE th Gate Threshold Voltage VGE = VCE , IC = 3.5 mA 4.5 6.5 V. IGES Gate ‐ Emitter Leakage Current .. Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max .. Tags: DIODE T25 4 do DIODE T25 APTGS75X170TE3 |
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First line: DIODE T25 4 do DIODE T25 4 APTGF90X60TE3 Application Motor control VCES 600V 80°C Abstract: .. VGE th Gate Threshold Voltage VGE = VCE , IC = 1.5mA 4.5 6.5 V. IGES Gate ‐ Emitter Leakage Current .. Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max .. Tags: DIODE T25 4 DIODE T25 4 do APTGF90X60TE3 |
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First line: RECTIFIER BRIDGE 25A 600V DIODE T25 4 do DIODE T25 4 APTGS25X120RTP2 APTGS25X120BTP2 Input rectifier bridge Brake Phase Bridge IGBT Power Module Application Motor control VCES 1200V 80°C Abstract: .. APT website ‐ http://www.advancedpower.com 2 - 4. IGBT & Diode Brake only for APTGS25X120BTP2 .. Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 kΩ B 25/50 T25 = 298.16 K 3375 K .. Tags: DIODE T25 4 DIODE T25 4 do RECTIFIER BRIDGE 25A 600V DIODE T25 APTGS25X120RTP2 APTGS25X120BTP2 |
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First line: DIODE T25 4 do ir igbt 1200V 10A ir igbt 1200V 10A DIODE T25 4 APTGS10X120RTP2 APTGS10X120BTP2 Input rectifier bridge Brake Phase Bridge IGBT Power Module Application Motor control VCES 1200V 80°C Abstract: .. APT website ‐ http://www.advancedpower.com 2 - 4. IGBT & Diode Brake only for APTGS10X120BTP2 .. Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 kΩ B 25/50 T25 = 298.16 K 3375 K .. Tags: DIODE T25 4 ir igbt 1200V 10A ir igbt 1200V 10AÂ DIODE T25 4 do DIODE T25 APTGS10X120RTP2 APTGS10X120BTP2 |
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First line: DIODE T25 4 do DIODE T25 4 rectifier bridge 300v 30a APTGF30X60RTP2 APTGF30X60BTP2 Input rectifier bridge Brake Phase Bridge IGBT Power Module Application Motor control VCES 600V 80°C Abstract: .. APTGF30X60BTP2 ‐ Rev 0 July, 2003 APT website ‐ http://www.advancedpower.com 2 - 4. IGBT & Diode .. Min Typ Max Unit R25 Resistance @ 25°C 5 kΩ B 25/50 T25 = 298.16 K 3375 K -= T .. Tags: DIODE T25 4 DIODE T25 4 do rectifier bridge 300v 30a APTGF30X60RTP2 APTGF30X60BTP2 |
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First line: DIODE T25 4 do DIODE T25 4 APTGS15X120RTP2 APTGS15X120BTP2 Input rectifier bridge Brake Phase Bridge IGBT Power Module Application Motor control VCES 1200V 80°C Abstract: .. APT website ‐ http://www.advancedpower.com 2 - 4. IGBT & Diode Brake only for APTGS15X120BTP2 .. Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 kΩ B 25/50 T25 = 298.16 K 3375 K .. Tags: DIODE T25 4 DIODE T25 4 do DIODE T25 APTGS15X120RTP2 APTGS15X120BTP2 |
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First line: DIODE T25 4 do DIODE T25 4 APTGF20X60RTP2 APTGF20X60BTP2 Input rectifier bridge Brake Phase Bridge IGBT Power Module Application Motor control VCES 600V 80°C Abstract: .. APT website ‐ http://www.advancedpower.com 2 - 4. IGBT & Diode Brake only for APTGF20X60BTP2 .. Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 kΩ B 25/50 T25 = 298.16 K 3375 K .. Tags: DIODE T25 4 DIODE T25 4 do DIODE T25 600v 20a IGBT APTGF20X60RTP2 APTGF20X60BTP2 |
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First line: DIODE T25 4 do DIODE T25 4 MAR 747 Philips Semiconductors Product specification Low-voltage stabistors BZV87 series Low-voltage stabilization Forward voltage range: Total power dissipation: max. Differential resistance range: max. Power clipping Abstract: .. €¢ Forward voltage range: 1.4 to 3.2 V • Total power dissipation: max. 330 mW • Differential .. mV/K BZV87-2V0 - -6.0 - mV/K BZV87-2V6 - -8.5 - mV/K BZV87-3V2 - -11.5 - mV/K Cd diode capacitance .. Tags: MAR 747 DIODE T25 4 DIODE T25 4 do datasheet abstract.. |
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First line: DIODE T25 4 DIODE T25 4 do APTM50DUM25T VDSS 500V RDSon 25°C 149A 25°C Application Switches Switched Mode Power Supplies Uninterruptible Power Supplies Abstract: .. .5A 25 mΩ VGS th Gate Threshold Voltage VGS = VDS, ID = 8mA 2 4 V IGSS Gate ‐ Source Leakage Current .. IS Continuous Source current Body diode Tc = 80°C 111 A VSD Diode Forward Voltage VGS = 0V, IS = - .. Tags: DIODE T25 4 do DIODE T25 4 C-111 APTM50DUM25T |
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First line: DIODE T25 4 APTM20DUM05T VDSS 200V RDSon 25°C 333A 25°C Application Switches Switched Mode Power Supplies Uninterruptible Power Supplies Abstract: .. 10 ns Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions .. ,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 .. Tags: DIODE T25 4 NTC Thermistor S 234 APTM20DUM05T |
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First line: DIODE T25 4 do 11eqs04 DIODE T25 4 11EQS03 11EQS04 Miniature Size Forward Voltage Drop Power Loss, High Efficiency High Surge Capability Volts thru Volts Types Available 26mm 52mm Inside Tape Spacing Package Available Abstract: .. PEAK REVERSE VOLTAGE __- Ti=t25"C" AVERAGE FORWARD CURRENT [A l/4V„,ii 2/4Vkrm 3/4Vrrm .. Its Respective Manufacturer SCHOTTKY BARRIER DIODE FEATURES ° Miniature Size o o. 1.lA/30 .. Tags: DIODE T25 4 11eqs04 DIODE T25 4 do datasheet abstract.. |
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First line: 20-ft P channel MOSFET 10A schematic DIODE T25 4 pch 1275 OM9326SC DUAL MOSFETS HERMETIC PACKAGE, CHANNEL Complementary 100V N-Channel P-Channel Power MOSFETs Hermetic Package RoS(on) Fast Switching Easy Heat Sink Small Isolated Hermetic Package Available Hi-Rel Screened MIL-S-19500, Levels Abstract: .. Diode Forward Voltage1 4.0 V Tc = 25 °C, ls = 20 A, Vas = 0 t„ Reverse Recovery Time 4.75 ns lF = 20A .. Tc= t25°C. Tc = 25° unless otherwise noted. ~ ~ :::J. Min. Typ. Max. Units Teat Conditions V Voo ",0 .. Tags: pch 1275 DIODE T25 4 P channel MOSFET 10A schematic 20-ft datasheet abstract.. |
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First line: DIODE T25 4 EC15QS09 EC15QS10 Surface Mounting Device Forward Voltage Drop Power Loss, High Efficiency High Surge Capability Volts through Volts Types Available Packaged 12mm Tape Reel Rolling During Assembly 5.31.2091 4.3U69) Abstract: .. Reel ° Not Rolling During Assembly MAXIMUM RATINGS 5.31.2091 â– -4.7US5 - _—4.7 .168 _ f 4 .. r------- f--T J -t25'C. =I25I:/ i o. 1 02. 0.1. o. I' 02 0.4. f. · I G.& 08. · .JiI' ~ 0.. ~ I:..iIIIIV tIP ~~ 0 .. Tags: DIODE T25 4 datasheet abstract.. |
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First line: 300- 1000 MODEL Insertion Loss DA0769 nSec Switching Speed Control Diode Section Attenuator Surface Mount Package PART IDENTIFICATION IN/OUT Abstract: .. .4 dB Insertion Loss VKT DA0769 â– 200 nSec Switching Speed - , â– ttl Control PIN Diode 5 Section .. I 0 1.2/1 50 200 40 165 tl3 t41 t22 ·S5 t25. 1,2,4,8,16 ±1O.25 dB + 2% OF ATTEN. SETTING IN dB 1.4. VSWR .. Tags: DIODE T25 4 datasheet abstract.. |
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First line: DIODE T25 4 cp25td1-24a* 220 volt ac to 12 volt dc inverter 12 volt dc to 220 volt ac inverter cp25td1-24a CP25TD1-24A DIP-CIB Converter Inverter Brake Amperes/1200 Volts Abstract: .. at TC = 25°C, T25 = 298K. CP25TD1-24A DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 25 Amperes/1200 .. DIODE FORWARD VOLTAGE CHARACTERISTICS CONVERTER PART - TYPICAL 1.4. 0.8. 1.0. 1.2. 0.6. 0 10. 0.4. 0 .. Tags: 12 volt dc to 220 volt ac inverter 220 volt ac to 12 volt dc inverter cp25td1-24a* DIODE T25 4 CP25TD1-24A cp25td1 CP25TD1-24A |
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First line: DIODE T25 4 CP10TD1-24A* CP10TD1-24A CP10TD1-24A DIP-CIB Converter Inverter Brake Amperes/1200 Volts Abstract: .. Forward Voltage Drop VFM IF = 10A — 1.1 1.4 Volts. Thermal and Mechanical Characteristics, Tj = 25 .. DIODE FORWARD VOLTAGE CHARACTERISTICS CONVERTER PART - TYPICAL 1.4. 0.8. 1.0. 1.2. 0.6. 0 5 10. 0.4 .. Tags: CP10TD1-24A* DIODE T25 4 Dc to Ac (single phase) inverter CP10TD1-24A CP10TD1-24A |
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First line: CP15TD1 DIODE T25 4 220 volt ac to 12 volt dc inverter 12 volt dc to 220 volt ac inverter CP15TD1-24A CP15TD1-24A DIP-CIB Converter Inverter Brake Amperes/1200 Volts Abstract: .. Forward Voltage Drop VFM IF = 15A — 1.1 1.4 Volts. Thermal and Mechanical Characteristics, Tj = 25 .. DIODE FORWARD VOLTAGE CHARACTERISTICS CONVERTER PART - TYPICAL 1.4. 0.8. 1.0. 1.2. 0.6. 0 5 10. 0.4 .. Tags: 12 volt dc to 220 volt ac inverter DIODE T25 4 inverter parts cp15td1-24a* CP15TD1 220 volt ac to 12 volt dc inverter CP15TD1-24A |
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First line: 12 to 220 inverter DIODE T25 4 CP20TD1-12A 12 volt dc to 220 volt ac inverter 220 volt ac to 0 to 30 volt dc inverter CP20TD1-12A DIP-CIB Converter Inverter Brake Amperes/600 Volts Abstract: .. Forward Voltage Drop VFM IF = 10A, Clamp Diode Part — 1.7 2.4 Volts. External Gate Resistance Rg .. TX T25. where R25 is the resistance at TC = 25°C, T25 = 298K. CP20TD1-12A DIP-CIB 3Ø Converter .. Tags: 220 volt ac to 0 to 30 volt dc inverter CP20TD1-12A DIODE T25 4 12 to 220 inverter GE Sensing CP20TD1 220 volt ac to 12 volt dc inverter 12 volt dc to 220 volt ac inverter CP20TD1-12A |
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First line: CP30TD1-12A 220 volt ac to 12 volt dc inverter 12 volt dc to 220 volt ac inverter CP30TD1-12A DIP-CIB Converter Inverter Brake Amperes/600 Volts Abstract: .. 4 04/06. Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics .. at TC = 25°C, T25 = 298K. CP30TD1-12A DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 30 Amperes/600 .. Tags: 12 volt dc to 220 volt ac inverter CP30TD1-12A 220 volt ac to 12 volt dc inverter 220 volt ac to 0 to 30 volt dc inverter CP30TD1-12A |
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First line: marking c smd diode smd marking code w1 sod-80 SMD MARKING GLASS DIODE transistor SMD MARKING CODE HF Glass Sealed Switching Diode LL4148 List Abstract: .. 0 .4 .8 1.2 1.6 2.0. T =25 C J. FIG.2 - TYPICAL DIODE CAPACITANCE. REVERSE VOLTAGE, V DIODE .. T o t25 C to Peak. Ramp-down. Temperature. Time. Profile Feature Soldering Condition. oAverage ramp .. Tags: transistor SMD MARKING CODE HF MARKING GLASS DIODE smd marking code w1 marking c smd diode sod-80 SMD LL4148(CHIP) LL4148 FAST MELF DIODE SMD T25 LL4148 |
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First line: smd diode marking a6 smd diode A2 A2 diode smd SMD DIODE A6 t smd diode code a6 BAS16 List Abstract: .. 0 .4 .8 1.2 1.6 2.0. T =25 C J. Scattering Limit. Scattering Limit. FIG.2 - TYPICAL DIODE CAPACITANCE .. T o t25 C to Peak. Ramp-down. Temperature. Time. Profile Feature Soldering Condition. oAverage ramp .. Tags: SMD DIODE A6 t smd diode marking a6 smd diode UF smd diode code a6 smd diode a6 smd diode A2 SMD a6 DIODE SMD T25 A2 diode smd BAS16 |
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