CY7C107 CY7C1007
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CY7C107 - CY7C107
CY7C1007 - CY7C1007
CY7C107 CY7C1
Static
High speed CMOS optimum speed/power active power standby power 2.0V data retention (optional) Automatic power-down when deselected TTL-compatible inputs outputs memory expansion provided active Chip Enable (CE) three-state drivers. These devices have automatic power-down feature that reduces power consumption more than when deselected. Writing devices accomplished taking Chip Enable (CE) Write Enable (WE) inputs LOW. Data input (DIN) written into memory location specified address pins through A19). Reading from devices accomplished taking Chip Enable (CE) while Write Enable (WE) remains HIGH. Under these conditions, contents memory location specified address pins will appear data output (DOUT) pin. output (DOUT) placed high-impedance state when device deselected HIGH) during write operation LOW). CY7C107 available standard 400-mil-wide SOJ; CY7C1007 available standard 300-mil-wide SOJ.
Functional Description
CY7C107 CY7C1007 high-performance CMOS static RAMs organized 1,048,576 words bit. Easy
Logic Block Diagram
Configuration
View
INPUT BUFFER DECODER
512x2048 ARRA
DOUT
DOUT
107-2
COLUMN DECODER
POWER DOWN
SENSE AMPS
107-1
Selection Guide
7C107-12 7C1007-12 7C107-15 7C1007-15 7C107-20 7C1007-20 7C107-25 7C1007-25 7C107-35
Maximum Access Time (ns) Maximum Operating Current (mA) Maximum Standby Current (mA)
Cypress Semiconductor Corporation Document 38-05034 Rev.
3901 North First Street
Jose
95134 408-943-2600 Revised August 2001
CY7C107 CY7C1Maximum Ratings
(Above which useful life impaired. user guidelines, tested.) Storage Temperature -65°C +150°C Ambient Temperature with Power Applied. -55°C +125°C Supply Voltage Relative
Current into Outputs (LOW) Static Discharge Voltage >2001V (per MIL-STD-883, Method 3015) Latch-Up Current. >200
Operating Range
Range Commercial Industrial Ambient Temperature[2] +70°C -40°C +85°C
.-0.5V +7.0V
Voltage Applied Outputs High State[1] -0.5V 0.5V Input Voltage[1] -0.5V 0.5V
Electrical Characteristics Over Operating Range
7C107-12 7C1007-12 Parameter Description Output HIGH Voltage Output Voltage Input HIGH Voltage Input Voltage[1] Input Load Current Output Leakage Current Output Short Circuit Current[3] Operating Supply Current Automatic Power-Down Current- Inputs Automatic Power-Down Current- CMOS Inputs VCC, Output Disabled Max., VOUT Max., IOUT fMAX 1/tRC Max. VCC, VIH, >VIH VIL, Max. VCC, 0.3V, 0.3V 0.3V, Test Conditions Min., -4.0 Min., -0.3 Min. VCC+ -300 -0.3 Max. 7C107-15 7C1007-15 Min. VCC+ -300 -0.3 Max. 7C107-20 7C1007-20 Min. VCC+ -300 Max. Unit
ISB1
ISB2
Notes: (min.) -2.0V pulse durations less than "instant case temperature. more than output should shorted time. Duration short circuit should exceed seconds.
Document 38-05034 Rev.
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CY7C107 CY7C1Electrical Characteristics Over Operating Range (continued)
7C107-25 7C1007-25 Parameter Description Output HIGH Voltage Output Voltage Input HIGH Voltage Input Voltage Input Load Current Output Leakage Current Output Short Circuit Current[3] Operating Supply Current Automatic Power-Down Current-TTL Inputs Automatic Power-Down Current-CMOS Inputs
7C107-35 Min. Max. Unit -0.3 -300
Test Conditions Min., -4.0 Min.,
Min.
Max.
-0.3 -300
VCC, Output Disabled Max., VOUT Max., IOUT fMAX 1/tRC Max. VCC, VIH, >VIH VIL, Max. VCC, 0.3V, 0.3V 0.3V,
ISB1
ISB2
Capacitance[4]
Parameter CIN: Addresses CIN: Controls COUT Output Capacitance Description Input Capacitance Test Conditions 25°C, MHz, 5.0V Max. Unit
Note: Tested initially after design process changes that affect these parameters.
Document 38-05034 Rev.
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CY7C107 CY7C1AC Test Loads Waveforms
OUTPUT INCLUDING SCOPE OUTPUT INCLUDING SCOPE 3.0V INPUT PULSES
107-4
107-3
Equivalent OUTPUT
EQUIVALENT 1.73V
Switching Characteristics[5] Over Operating Range
7C107-12 7C1007-12 Parameter READ CYCLE tOHA tACE tLZCE tHZCE tSCE tPWE tLZWE tHZWE Read Cycle Time Address Data Valid Data Hold from Address Change Data Valid Z[6] HIGH High
7C107-15 7C1007-15 Min. Max.
7C107-20 7C1007-20 Min. Max.
7C107-25 7C1007-25 Min. Max.
7C107-35 Min. Max. Unit
Description
Min.
Max.
Power-Up HIGH Power-Down Write Cycle Time Write Address Set-Up Write Address Hold from Write Address Set-Up Write Start Pulse Width Data Set-Up Write Data Hold from Write HIGH
WRITE CYCLE[8]
High Z[6,
Notes: Test conditions assume signal transition time less, timing reference levels 1.5V, input pulse levels 3.0V, output loading specified IOL/IOH 30-pF load capacitance. given temperature voltage condition, tHZCE less than tLZCE tHZWE less than tLZWE given device. tHZCE tHZWE specified with load capacitance part Test Loads. Transition measured ±500 from steady-state voltage. internal write time memory defined overlap LOW. must initiate write, transition these signals terminate write. input data set-up hold timing should referenced leading edge signal that terminates write.
Document 38-05034 Rev.
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CY7C107 CY7C1Data Retention Characteristics Over Operating Range Version Only)
Parameter ICCDR tCDR[4] tR[4] Description Data Retention Data Retention Current Chip Deselect Data Retention Time Operation Recovery Time 2.0V, 0.3V, 0.3V Conditions[9] Min. Max. Unit
Data Retention Waveform
DATA RETENTION MODE 4.5V tCDR
107-5
4.5V
Switching Waveforms
Read Cycle 1[10,
ADDRESS tOHA DATA PREVIOUS DATA VALID DATA VALID
107-6
Read Cycle 2[11,
ADDRESS tACE tLZCE DATA HIGH IMPEDANCE DATA VALID
107-7
tHZCE
HIGH IMPEDANCE
SUPPLY CURRENT
Notes: input exceed 0.5V. Device continuously selected, VIL. HIGH read cycle. Address valid prior coincident with transition LOW.
Document 38-05034 Rev.
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CY7C107 CY7C1Switching Waveforms (continued)
Write Cycle Controlled)[13]
ADDRESS tPWE DATA DATA VALID tSCE
DATA
HIGH IMPEDANCE
107-8
Write Cycle Controlled)[13]
ADDRESS tSCE DATA DATA VALID tHZWE DATA DATA UNDEFINED
107-9
tPWE
tLZWE HIGH IMPEDANCE
Note: goes HIGH simultaneously with going HIGH, output remains high-impedance state.
Document 38-05034 Rev.
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CY7C107 CY7C1Truth Table
High Data High DOUT Read Write Mode Power-Down Standby (ISB) Active (ICC) Active (ICC) Power
Ordering Information
Speed (ns) Ordering Code CY7C107-12VC CY7C1007-12VC CY7C107-15VC CY7C1007-15VC CY7C107-15VI CY7C1007-15VI CY7C107-20VC CY7C1007-20VC CY7C107-25VC CY7C1007-25VC Package Name Package Type 28-Lead (400-Mil) Molded 28-Lead (300-Mil) Molded 28-Lead (400-Mil) Molded 28-Lead (300-Mil) Molded 28-Lead (400-Mil) Molded 28-Lead (300-Mil) Molded 28-Lead (400-Mil) Molded 28-Lead (300-Mil) Molded 28-Lead (400-Mil) Molded 28-Lead (300-Mil) Molded Operating Range Commercial Commercial Industrial Commercial Commercial
Package Diagrams
28-Lead (300-Mil) Molded
51-85031-B
Document 38-05034 Rev.
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CY7C107 CY7C1Package Diagrams (continued)
28-Lead (400-Mil) Molded
51-85032-A
Document 38-05034 Rev.
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Cypress Semiconductor Corporation, 2001. information contained herein subject change without notice. Cypress Semiconductor Corporation assumes responsibility circuitry other than circuitry embodied Cypress Semiconductor product. does convey imply license under patent other rights. Cypress Semiconductor does authorize products critical components life-support systems where malfunction failure reasonably expected result significant injury user. inclusion Cypress Semiconductor products life-support systems application implies that manufacturer assumes risk such doing indemnifies Cypress Semiconductor against charges.
CY7C107 CY7C1Document Title: CY7C107, CY7C1007 Static Document Number: 38-05034 REV. 106828 Issue Date 09/10/01 Orig. Change Description Change Change from Spec number: 38-00232 38-05034
Document 38-05034 Rev.
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