C67070-A2705-A67 C67070-A2707-A67
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C67070-A2705-A67 - C67070-A2705-A67
C67070-A2707-A67 - C67070-A2707-A67
Single switch Including fast free-wheeling diodes Package with insulated metal base plate on,min Type Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage collector current Pulsed collector current, Power dissipation IGBT Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, 1min. Creepage distance Clearance humidity category, climatic category, 68-1 Tstg RthJC RthJCD Ptot 1750 0.07 0.21 4000 ICpuls Symbol VCGR 1700 Values 1700 Unit Package SINGLE SWITCH SENSE Ordering Code C67070-A2705-A67 C67070-A2707-A67 1700V 290A 1700V 290A
Oct-27-1997
Electrical Characteristics, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VCE, Collector-emitter saturation voltage Zero gate voltage collector current 1700 1700 Gate-emitter leakage current Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Crss Coss Ciss IGES ICES VCE(sat) VGE(th) Values typ. max. Unit
Oct-27-1997
Electrical Characteristics, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load Turn-on delay time 1200 RGon Rise time 1200 RGon Turn-off delay time 1200 RGoff Fall time 1200 RGoff Free-Wheel Diode Diode forward voltage Reverse recovery time -1200 diF/dt -1400 A/µs, Reverse recovery charge -1200 diF/dt -1400 A/µs 1250 1800 td(off) 1000 td(on) Values typ. max. Unit
Oct-27-1997
Power dissipation Ptot (TC) parameter:
1800 Ptot 1400 1200 1000
Safe operating area (VCE) parameter: 25°C
1.4µs
Collector current (TC) parameter:
Transient thermal impedance (tp) parameter:
ZthJC
IGBT
0.50 0.20 0.10 0.05 single pulse 0.02
Oct-27-1997
Typ. output characteristics (VCE) parameter:
Typ. output characteristics (VCE) parameter:
Typ. transfer characteristics (VGE) parameter:
Oct-27-1997
Typ. gate charge (QGate) parameter: puls
Typ. capacitances
(VCE)
parameter:
1200
Ciss
Coss Crss
QGate
Reverse biased safe operating area ICpuls f(VCE) 150°C parameter:
Short circuit safe operating area ICsc f(VCE) 150°C parameter:
ICpulsIC di/dt 1000A/µs 3000A/µs 5000A/µs
ICsc/IC
di/dt 1000A/µs 3000A/µs 5000A/µs
allowed numbers short circuit: <1000 time between short circuit:
1000 1200 1400
1800
1000 1200 1400
1800
Oct-27-1997
Typ. switching time (IC) inductive load 125°C par.: 1200
Typ. switching time (RG) inductive load 125°C par.: 1200
tdoff
tdoff
tdon
tdon
Typ. switching losses (IC) inductive load 125°C par.: 1200
Typ. switching losses (RG) inductive load 125°C par.: 1200
Eoff
Eoff
Oct-27-1997
Forward characteristics fast recovery reverse diode f(VF) parameter:
Tj=125°C
Transient thermal impedance (tp) parameter:
Diode
Tj=25°C ZthJC
0.50 0.20 0.10 single pulse 0.05 0.02
Oct-27-1997
Circuit Diagram
Package Outlines Dimensions Weight:
Oct-27-1997
Nutzungsbedingungen
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