BF998 BF998R BF998RW
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BF998R 800MHz - BF998R 800MHz
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N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Applications
Input mixer stages tuners.
Features
Integrated gate protection diodes noise figure feedback capacitance High cross modulation performance
input capacitance High AGC-range High gain
9279
9278
10831
BF998 Marking: Plastic case (SOT 143) Source, Drain, Gate Gate
BF998R Marking: Plastic case (SOT 143R) Source, Drain, Gate Gate
BF998RW Marking: Plastic case (SOT 343R) Source, Drain, Gate Gate
Absolute Maximum Ratings
Tamb 25_C, unless otherwise specified Parameter Drain source voltage Drain current Gate 1/Gate source peak current Gate 1/Gate source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value ±IG1/G2SM ±VG1S/G2S Ptot Tstg +150 Unit
Tamb
Document Number 85011 Rev. 23-Jun-99
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BF998/BF998R/BF998RW
Vishay Telefunken Maximum Thermal Resistance
Tamb 25_C, unless otherwise specified Parameter Test Conditions Channel ambient glass fibre printed board 1.5) plated with 35mm Symbol RthChA Value Unit
Electrical Characteristics
Tamb 25_C, unless otherwise specified Parameter Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Gate source leakage current Gate source leakage current Drain current Test Conditions -VG1S -VG2S ±IG1S VG2S ±IG2S VG1S ±VG1S VG2S ±VG2S VG1S VG1S VG2S Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS BF998/BF998R/ BF998RW BF998A/BF998RA/ BF998RAW BF998B/BF998RB/ BF998RBW IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) Unit
10.5
Gate source cut-off voltage Gate source cut-off voltage
VG2S VG1S
Electrical Characteristics
VG2S Tamb 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Gate input capacitance Feedback capacitance Output capacitance Power gain range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss DGps 1.05 Unit
VG1S VG2S
VG2S
16.5
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Document Number 85011 Rev. 23-Jun-99
BF998/BF998R/BF998RW
Vishay Telefunken Typical Characteristics (Tamb 25_C unless otherwise specified)
Total Power Dissipation Drain Current VG1S=
12159
VDS=
12817
-0.6
-0.2
Tamb Ambient Temperature
VG2S Gate Source Voltage
Figure Total Power Dissipation Ambient Temperature
Drain Current
12812
Figure Drain Current Gate Source Voltage
VG2S= VG1S= 0.6V issg1 Gate Input Capacitance VDS=8V VG2S=4V f=1MHz
0.4V 0.2V -0.2V -0.4V
-1.5 -1.0 -0.5
Drain Source Voltage
12863
VG1S Gate Source Voltage
Figure Drain Current Drain Source Voltage
Figure Gate Input Capacitance Gate Source Voltage
Output Capacitance
VDS= Drain Current -0.8
12816
VG2S=4V f=1MHz
VG2S=-1V -0.4
12864
VG1S Gate Source Voltage
Drain Source Voltage
Figure Drain Current Gate Source Voltage
Figure Output Capacitance Drain Source Voltage
Document Number 85011 Rev. 23-Jun-99
www.vishay.com
BF998/BF998R/BF998RW
800MHz Transducer Gain -0.2V -0.4V
12818
1300MHz
12821
VDS=8V VG2S=4V f=100.1300MHz ID=5mA 10mA 20mA
f=100MHz
400MHz 700MHz 1000MHz
VG2S=-0.8V
-0.5
VG1S Gate Source Voltage
(y21)
Figure Transducer Gain Gate Source Voltage
y21s Forward Transadmittance
12819
Figure Short Circuit Forward Transfer Admittance
VDS=8V f=1MHz
VG2S=4V
f=1300MHz
1000MHz 700MHz 400MHz 100MHz 0.25 0.50 0.75 VDS=15V VG2S=4V ID=10mA f=100.1300MHz 1.00 1.25 1.50
12822
Drain Current
(y22)
Figure Forward Transadmittance Drain Current
12820
Figure Short Circuit Output Admittance
f=1300MHz
1000MHz 700MHz VDS=8V VG2S=4V ID=10mA f=100.1300MHz
400MHz 100MHz
(y11)
Figure Short Circuit Input Admittance
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Document Number 85011 Rev. 23-Jun-99
BF998/BF998R/BF998RW
Vishay Telefunken VG2S
120° j0.5 150° j0.2 1300MHz 1200 180° 0.08 0.16
-j0.2
120° 150° 1300MHz 180° 1000
-j0.2 -150° -30°
-120°
-60° -90°
Figure Forward transmission coefficient
Document Number 85011 Rev. 23-Jun-99
1300MHz 1000 -j0.5
-150°
-30°
-120°
-60° -90°
Figure Input reflection coefficient
Figure Reverse transmission coefficient
j0.5
j0.2
1300MHz -j0.5
Figure Output reflection coefficient
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BF998/BF998R/BF998RW
Vishay Telefunken Dimensions BF998
12240
Dimensions BF998R
12239
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Document Number 85011 Rev. 23-Jun-99
BF998/BF998R/BF998RW
Vishay Telefunken Dimensions BF998RW
12238
Document Number 85011 Rev. 23-Jun-99
www.vishay.com
BF998/BF998R/BF998RW
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
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Document Number 85011 Rev. 23-Jun-99
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