APTM100A13DG
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APTM100A13DG - APTM100A13DG
APTM100A13DG
Phase with Series diodes MOSFET Power Module
VBUS
VDSS 1000V RDSon 130m 25°C 25°C
Application Zero Current Switching resonant mode Features Power MOSFETs RDSon input Miller capacitance gate charge Fast intrinsic reverse diode Avalanche energy rated Very rugged Kelvin source easy drive Very stray inductance Symmetrical design power connectors High level integration Benefits Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance profile RoHS Compliant
0/VBUS
VBUS
0/VBUS
Absolute maximum ratings
Symbol VDSS RDSon
Parameter Drain Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate Source Voltage Drain Source Resistance Maximum Power Dissipation Avalanche current (repetitive repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy 25°C 80°C
25°C
ratings 1000 1250 1300
Unit
These Devices sensitive Electrostatic Discharge. Proper Handing Procedures Should Followed. application note APT0502 www.microsemi.com
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APTM100A13DG
December, 2006
APTM100A13DG
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Zero Gate Voltage Drain Current Drain Source Resistance Gate Threshold Voltage Gate Source Leakage Current
0V,VDS= 1000V 0V,VDS= 800V
25°C 125°C
10V, 32.5A VDS,
±450
Unit
Dynamic Characteristics
Symbol Ciss Coss Crss Td(on) Td(off) Eoff Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions 1MHz VBus 500V Inductive switching 125°C VBus 667V Inductive switching 25°C 15V, VBus 667V 65A, Inductive switching 125°C 15V, VBus 667V 65A,
15.2 0.42 2.13 0.46 0.57
Unit
Series diode ratings characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage
Test Conditions VR=1200V 25°C 125°C
100°C
1200
Unit
Maximum Reverse Leakage Current Forward Current Diode Forward Voltage
120A 240A 120A 120A 800V di/dt 400A/µs
125°C 25°C 125°C 25°C 125°C
1120 5800
December, 2006 APTM100A13DG
Reverse Recovery Time Reverse Recovery Charge
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APTM100A13DG
Thermal package characteristics
Symbol Characteristic RthJC VISOL TSTG Torque Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight heatsink terminals Transistor Series diode 2500 0.10 0.46 Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
Package outline (dimensions
application note APT0601 Mounting Instructions Power Modules www.microsemi.com
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APTM100A13DG
December, 2006
APTM100A13DG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration 0.12 Thermal Impedance (°C/W) 0.08 0.06 0.04 0.02 0.05 0.0001 0.001 Single Pulse
0.00001
0.01
rectangular Pulse Duration (Seconds) Voltage Output Characteristics Drain Current Drain Current VDS, Drain Source Voltage RDS(on) Drain Current Drain Current
Normalized =10V 32.5A GS=10V GS=20V VGS=15&10V 6.5V
Transfert Characteristics
J=25°C TJ=125°C J=-55°C
D(on)xRDS(on)MAX 250µs pulse test duty cycle
5.5V
VGS, Gate Source Voltage Drain Current Case Temperature
RDS(on) Drain Source Resistance
Drain Current
Case Temperature (°C)
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APTM100A13DG
December, 2006
APTM100A13DG
RDS(on), Drain Source resistance (Normalized) Breakdown Voltage Temperature BVDSS, Drain Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 Junction Temperature (°C) Threshold Voltage Temperature VGS(TH), Threshold Voltage (Normalized) Drain Current Case Temperature (°C) Capacitance Drain Source Voltage VGS, Gate Source Voltage 100000 Capacitance (pF) Ciss 10000 Coss 1000 Crss
December, 2006 APTM100A13DG
resistance Temperature Junction Temperature (°C) Maximum Safe Operating Area
=10V ID=32.5A
1000
100µs
limited RDSon
Single pulse TJ=150°C TC=25°C
10ms
1000 Drain Source Voltage
Gate Charge Gate Source Voltage ID=65A TJ=25°C
=500V =200V
VDS=800V
VDS, Drain Source Voltage
Gate Charge (nC)
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APTM100A13DG
Delay Times Current td(on) td(off) (ns)
VDS=667V RG=0.5 J=125°C L=100µH
Rise Fall times Current
d(off) (ns) Drain Current Switching Energy Current Drain Current
VDS=667V RG=0.5 J=125°C L=100µH
d(on)
Switching Energy Gate Resistance
Switching Energy (mJ)
Switching Energy (mJ)
VDS=667V RG=0.5 J=125°C L=100µH
DS=667V ID=65A J=125°C L=100µH
Eoff
Eoff
Drain Current Operating Frequency Drain Current
VDS=667V D=50% RG=0.5 J=125°C C=75°C
Gate Resistance (Ohms) Source Drain Diode Forward Voltage Reverse Drain Current 1000
TJ=150°C
Frequency (kHz) Drain Current
Hard switching
J=25°C
December, 2006 APTM100A13DG
VSD, Source Drain Voltage
Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
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