APTC90DSK12CT1G
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APTC90DSK12CT1G - APTC90DSK12CT1G
APTC90DSK12CT1G
Dual buck chopper Super Junction MOSFET chopper diode
VDSS 900V RDSon 120m 25°C 25°C
Application motor control Switched Mode Power Supplies Features Ultra RDSon Miller capacitance Ultra gate charge Avalanche energy rated Very rugged
Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient Very stray inductance Symmetrical design Internal thermistor temperature monitoring High level integration
Pins must shorted together
Benefits Outstanding performance high frequency operation Direct mounting heatsink (isolated package) junction case thermal resistance Solderable terminals both power signal easy mounting profile RoHS Compliant ratings 1940 Unit
APTC90DSK12CT1G September, 2009
Absolute maximum ratings
Symbol VDSS RDSon Parameter Drain Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate Source Voltage Drain Source Resistance Maximum Power Dissipation Avalanche current (repetitive repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy 25°C 80°C
25°C
These Devices sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed. application note APT0502 www.microsemi.com
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APTC90DSK12CT1G
ratings 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain Source Resistance Gate Threshold Voltage Gate Source Leakage Current Test Conditions
0V,VDS 900V 0V,VDS 900V
25°C 125°C
Unit
10V, VDS,
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Td(on) Td(off) Eoff Eoff Total gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions 100V 1MHz VBus 400V Inductive Switching (125°C) VBus 600V Inductive switching 25°C VBus 600V Inductive switching 125°C VBus 600V 6800 1278 Unit
chopper diode ratings characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions VR=1200V 25°C 175°C 100°C 25°C 175°C 1200 1000 Unit
APTC90DSK12CT1G September, 2009
10A, 600V di/dt =500A/µs 1MHz, 200V 1MHz, 400V
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APTC90DSK12CT1G
Temperature sensor (see application note APT0406 www.microsemi.com more information).
Symbol R25/R25 B25/85 Characteristic Resistance 25°C 298.15 TC=100°C
Thermistor temperature Thermistor value
3952
Unit
Thermal package characteristics
Symbol RthJC VISOL TSTG Torque Characteristic Junction Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight CoolMOS Diode 4000 Unit °C/W
Isolation Voltage, terminal case min, isol<1mA, 50/60Hz
heatsink
Package outline (dimensions
application note 1904 Mounting Instructions Power Modules www.microsemi.com
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APTC90DSK12CT1G September, 2009
APTC90DSK12CT1G
Typical CoolMOS Performance Curve
VDS=600V D=50% RG=7.5 TJ=125°C TC=75°C
RDS(on), Drain Source resistance (Normalized)
Operating Frequency Drain Current
resistance Temperature Junction Temperature (°C) Switching Energy Gate Resistance
Frequency (kHz)
12.5 17.5 22.5 Drain Current
Hard switching
Switching Energy Current Eoff (mJ) Drain Current
VDS=600V RG=7.5 TJ=125°C L=100µH
Switching Energy (mJ)
Eoff
Eoff
VDS=600V ID=26A TJ=125°C L=100µH
Gate Resistance (Ohms)
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APTC90DSK12CT1G September, 2009
APTC90DSK12CT1G
Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration
0.05 Single Pulse
0.00001
0.0001
0.001
0.01
rectangular Pulse Duration (Seconds) Voltage Output Characteristics
VGS=20,
BVDSS, Drain Source Breakdown Voltage
Drain Current
Breakdown Voltage Temperature 1000 Junction Temperature (°C) Drain Current Case Temperature Drain Current Case Temperature (°C)
VDS, Drain Source Voltage Maximum Safe Operating Area 1000 Drain Current
limited RDSon
Single pulse TJ=150°C TC=25°C 1000
VDS, Drain Source Voltage Capacitance Drain Source Voltage VGS, Gate Source Voltage 100000 Capacitance (pF) 10000 1000 VDS, Drain Source Voltage Crss Ciss
Gate Charge Gate Source Voltage VDS=400V ID=26A TJ=25°C
Coss
Gate Charge (nC)
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APTC90DSK12CT1G September, 2009
APTC90DSK12CT1G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction Case Pulse Duration Thermal Impedance (°C/W) 0.05 0.00001 0.0001 0.001 Single Pulse
0.01
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25°C
Reverse Characteristics Reverse Current (µA)
Forward Current
TJ=75°C
TJ=125°C
TJ=75°C TJ=125°C TJ=175°C TJ=25°C
TJ=175°C
Forward Voltage Capacitance vs.Reverse Voltage
1000 1200 1400 1600 Reverse Voltage
Capacitance (pF)
APTC90DSK12CT1G September, 2009
Reverse Voltage
1000
"COOLMOScomprise family transistors developed Infineon Technologies "COOLMOS" trademark Infineon Technologies AG". Microsemi reserves right change, without notice, specifications information contained herein
Microsemi's products covered more patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 foreign patents. Foreign patents pending. Rights Reserved.
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