APT6013JVR

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APT6013JVR - APT6013JVR

APT6013JVR
600V 0.130
Power generation high voltage N-Channel enhancement mode power MOSFETs. This technology minimizes JFET effect, increases packing density reduces on-resistance. Power also achieves faster switching speeds through optimized gate layout.
ISOTOP
Recognized"
Faster Switching Lower Leakage
100% Avalanche Tested Popular SOT-227 Package
Unless stated otherwise, Microsemi discrete MOSFETs contain single MOSFET die. This device made with parallel MOSFET die. intended switch-mode operation. suitable linear mode operation.
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage Continuous Drain Current 25°C Pulsed Drain Current
Ratings: 25°C unless otherwise specified.
APT6013JVR UNIT Volts Amps
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation 25°C Linear Derating Factor Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Volts Watts W/°C Amps
(Repetitive Non-Repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) State Drain Current
UNIT Volts Amps
0.130 ±100
(VDS D(on) DS(on) Max, 10V)
Drain-Source On-State Resistance
(VGS 10V, ID[Cont.])
Ohms Volts
050-5619 6-2006
Zero Gate Voltage Drain Current (VDS VDSS, Zero Gate Voltage Drain Current (VDS VDSS, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 1mA)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Microsemi Website http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
APT6013JVR
Test Conditions VDSS ID[Cont.] 25°C VDSS ID[Cont.] 25°C UNIT
8800 1050
10560 1470
Gate-Source Charge Gate-Drain ("Miller Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
Symbol Characteristic Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
UNIT Amps Volts
(Body Diode) (VGS -ID[Cont.])
Reverse Recovery Time -ID[Cont.], S/dt 100A/µs) Reverse Recovery Charge -ID[Cont.], S/dt 100A/µs)
THERMAL PACKAGE CHARACTERISTICS
Symbol VIsolation Torque Characteristic Junction Case Junction Ambient Voltage (50-60 Sinusoidal Waveform From Terminals Mounting Base Min.) Maximum Torque Device Mounting Screws Electrical Terminations. UNIT °C/W Volts
0.25 2500
Repetitive Rating: Pulse width limited maximum junction
temperature.
Pulse Test: Pulse width Duty Cycle
MIL-STD-750 Method 3471 Starting +25°C, 2.89mH, Peak
Microsemi reserves right change, without notice, specifications information contained herein.
THERMAL IMPEDANCE (°C/W)
D=0.5 0.05 0.05 0.02 0.01 SINGLE PULSE
0.01 0.005
Note:
Duty Factor t1/t2 Peak
050-5619 6-2006
0.001 10-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE PULSE DURATION
10-4
APT6013JVR
DRAIN CURRENT (AMPERES)
VGS=6V,
DRAIN CURRENT (AMPERES)
VGS=7V, 5.5V
5.5V
4.5V
4.5V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE RESISTANCE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL OUTPUT CHARACTERISTICS 1.20
DRAIN CURRENT (AMPERES)
VDS> (ON) (ON)MAX. 250µSEC. PULSE TEST <0.5 DUTY CYCLE
NORMALIZED [Cont.]
1.15
1.10 VGS=10V VGS=20V 1.00
+125°C +25°C -55°C
1.05
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL TRANSFER CHARACTERISTICS
DRAIN CURRENT (AMPERES)
0.95
DRAIN CURRENT (AMPERES) FIGURE RDS(ON) DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
1.10
1.05
1.00
0.95
CASE TEMPERATURE (°C) FIGURE MAXIMUM DRAIN CURRENT CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
JUNCTION TEMPERATURE (°C) FIGURE BREAKDOWN VOLTAGE TEMPERATURE
0.90
[Cont.]
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
050-5619 6-2006
JUNCTION TEMPERATURE (°C) FIGURE ON-RESISTANCE TEMPERATURE
CASE TEMPERATURE (°C) FIGURE THRESHOLD VOLTAGE TEMPERATURE
APT6013JVR
30,000
DRAIN CURRENT (AMPERES)
10,000
CAPACITANCE (pF)
Ciss
5,000 Coss Crss
Graph removed
1,000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE TYPICAL CAPACITANCE DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
[Cont.]
=+150°C =+25°C
VDS=120V VDS=300V
VDS=480V
TOTAL GATE CHARGE (nC) FIGURE GATE CHARGES GATE-TO-SOURCE VOLTAGE
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240) 31.7 (1.248) (.307) (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) places) 11.8 (.463) 12.2 (.480) (.350) (.378) places)
(.157) places)
(.157) (.165) places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
(.129) (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
050-5619 6-2006
1.95 (.077) 2.14 (.084)
Source
Drain
Source terminals shorted internally. Current handling capability equal either Source terminal.
Source Dimensions Millimeters (Inches)
Gate
VIsolation, Voltage (50-60 Sinusoidal Waveform from Terminals Mounting Base Minute) 2500 Volts Minimum
Recognized" File E145592
ISOTOP® Registered Trademark Thomson. Microsemi's products covered more U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.

APT6013JVR

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