AP4232GM
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AP4232GM - AP4232GM
AP4232GM - AP4232GM
AP4232GM
On-Resistance Simple Drive Requirement Dual MOSFET Package
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
7.8A
SO-8
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, ultra on-resistance cost-effectiveness.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Rating 0.016
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
Value Max. 62.5
Unit
Data specifications subject change without notice
200112051
AP4232GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.
Typ. 0.02
Max. Units ±100 1150
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=7A VGS=4.5V, ID=5A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=7A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board, <10sec when mounted Min. copper pad.
AP4232GM
Drain Current
Drain Current
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
ID=5A Normalized DS(ON)
ID=7A =10V
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
Normalized VGS(th)
IS(A)
=150
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP4232GM
f=1.0MHz
1000
ID=7A Gate Source Voltage
(pF)
=15V =20V =24V
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
0.05
10ms 100ms
0.02
Single Pulse
0.01
0.01 Duty factor Peak Rthja Rthja 135/W
Single Pulse
0.01
0.001 0.0001 0.001 0.01 1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
Drain Current
=150
4.5V
Charge
Gate-to-Source Voltage
Transfer Characteristics
Gate Charge Waveform
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