| Fulltext Datasheet Results |
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First line: 512Mb: DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 banks MT47H64M8 banks MT47H32M16 banks Abstract: .. 512MbDDR2_1.fm - Rev. E 12/04 EN 1 ©2004 Micron Technology, Inc. All rights reserved .. 512MbDDR2TOC.fm - Rev. E 12/04 EN 2 ©2004 Micron Technology, Inc. All rights reserved. Table .. Tags: DDR2 16 meg x16 DDR2 SDRAM Meg x 5 x 8 banks DDR2 SDRAM Meg x 5 x 8 banks 0-30v variable power supply marking H8 MT47H32M16 MT47H128M4 MT47H64M8 MT47H32M16 |
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First line: 512Mb: SDRAM Features Synchronous DRAM MT48LC128M4A2 banks MT48LC64M8A2 banks MT48LC32M16A2 banks latest data sheet, refer Micron's site Abstract: .. 512Mb: x4, x8, x16 SDRAM Features. PDF: 09005aef809bf8f3/Source: 09005aef80818a4a Micron .. 512MbSDRAMTOC.fm - Rev. L 10/07 EN 2 ©2000 Micron Technology, Inc. All rights reserved. 512Mb .. Tags: 1m x16 SDRAM MICRON tin bank MT48LC32M16A2P-75 MT48LC32M16A2P MT48LC32M16A2 MICRON TECHNOLOGY banks 512MB* MT48LC128M4A2 MT48LC64M8A2 MT48LC32M16A2 |
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First line: 512Mb: SDRAM SYNCHRONOUS DRAM PC100- PC133-compliant Fully synchronous; signals registered positive edge system clock Internal pipelined operation; column address changed every clock cycle Internal banks hiding access/precharge Programmable burst lengths: full page Auto Precharge, includes CONCURREN Abstract: .. pdf: 09005aef809bf8f3/source: 09005aef80818a4a 512mbSDRAMfront.fm - Rev. G 12/04 EN 1 © .. 512Mb: x4, x8, x16 SDRAM. pdf: 09005aef809bf8f3/source: 09005aef80818a4a Micron Technology .. Tags: 7/6 pin mini din marking H8 TN-48-05 transistor marking code 7e MT48LC128M4A2* datasheet abstract.. |
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First line: 256MBIT* lpddr* Memory Power Consumption Comparison FCRAM achieves power consumption Conditions: 4-bank interleave, 3.2GByte/s DDR2: 256Mbit x2pcs, x16, 800Mbps, CL=10pF, ODT=50 LPDDR: 256Mbit x2pcs, x32, 400Mbps, CL=10pF FCRAM: 512Mbit x1pc, x64, 400Mbps, CL=8pF (SiP) Abstract: .. For more information about 512Mbit FCRAM with wide data bandwidth. , or SiP solution. , please .. FCRAM: 512Mbit x1pc, x64, 400Mbps, CL=8pF SiP .. Tags: lpddr* 256MBIT* datasheet abstract.. |
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First line: 512Mb: SDRAM Features SDRAM MT48LC128M4A2 banks MT48LC64M8A2 banks MT48LC32M16A2 banks Features PC100- PC133-compliant Fully synchronous; signals registered positive edge system clock Internal, pipelined operation; column address changed every clock cycle Internal banks hiding access/precharge Progr Abstract: .. PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. M 6/10 EN 1. Micron Technology, Inc. reserves the .. PDF: 09005aef809bf8f3 512Mb_sdr.pdf - Rev. M 6/10 EN 2. Micron .. Tags: datasheet abstract.. |
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First line: 512Mb: DDR2 SDRAM DDR2 SDRAM Abstract: .. 09005aef80b88542 512MbDDR2_1.fm - Rev. A 11/03 EN 1 ©2003 Micron Technology, Inc. All rights .. 512Mb: x4, x8, x16 DDR2 SDRAM. PRELIMINARY‡ DDR2 SDRAM MT47H128M4 – 32 MEG X 4 X 4 BANKS MT47H64M8 .. Tags: DDR2 SDRAM Meg x 5 x 8 banks 0-30v power supply DDR2 SDRAM Meg x 4 x 9 banks datasheet abstract.. |
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First line: M383_061301 Technical application note Idd6 power mode Registered DIMM. Written .Won. 11/30 Abstract: .. Table 2 show self refresh current SPEC in registered DIMM for 512MB M383L6420BT1 Total Idd6 .. Table 3 : self refresh currents in 512MB measured by tester M383L6420BT1 512Mbyte 512Mbye .. Tags: datasheet abstract.. |
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First line: 512Mb: x16, Mobile LPDDR SDRAM Features Mobile Low-Power SDRAM MT46H32M16LF Banks MT46H16M32LF Banks Features VDD/VDDQ 1.70-1.95V 1.2V option VDDQ 1.14-1.30V Bidirectional data strobe byte data (DQS) Internal, pipelined double data rate (DDR)architecture; data accesses clock cycle Differential clock Abstract: .. PDF: 09005aef82d5d305 512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN 1. Micron .. 512Mb: x16, x32 Mobile LPDDR SDRAM Features. PDF .. Tags: Elpida LPDDR2 Memory micron lpddr2 samsung lpddr2 elpida lpddr2 samsung* lpddr2* MT46H32M16LF MT46H16M32LF |
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First line: 512Mb: SDRAM DOUBLE DATA RATE (DDR) SDRAM +2.5V ±0.2V, VDDQ +2.5V ±0.2V +2.6V ±0.1V, VDDQ +2.6V ±0.1V (DDR400) Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 byte) Internal, pipelined double-data-rate (DDR) arch Abstract: .. 512Mb: x4, x8, x16 DDR SDRAM. 09005aef80a1d9e7 Micron Technology, Inc., reserves the right to .. Figure 2: 512Mb DDR SDRAM Part Numbers. FBGA Part Number System Due to space limitations, FBGA .. Tags: marking J8 EDO* circuit diagram of fm transmitter t03 package transistor pin configuration 250v 104 K capacitor MT46V32M16 datasheet abstract.. |
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First line: 512Mb: SDRAM DOUBLE DATA RATE (DDR) SDRAM +2.5V ±0.2V, VDDQ +2.5V ±0.2V +2.6V ±0.1V, VDDQ +2.6V ±0.1V (DDR400) Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 byte) Internal, pipelined double-data-rate (DDR) arch Abstract: .. 09005aef80a1d9e7 512MBDDRx4x8x16_1.fm - Rev. F 12/03 EN 1 ©2000 Micron Technology, Inc. All .. 512Mb: x4, x8, x16 DDR SDRAM. 09005aef80a1d9e7 Micron Technology, Inc., reserves the right to .. Tags: datasheet abstract.. |
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First line: 512Mb: Mobile SDRAM Mobile SDRAM MT48H32M16LF banks MT48H16M32LF/LG banks Abstract: .. 512mb_mobile_sdram_y47m__1.fm - Rev. B 4/08 EN 1 ©2007 Micron Technology, Inc. All rights .. 512mb_mobile_sdram_y47mTOC.fm - Rev. B 4/08 EN 2 ©2007 Micron Technology, Inc. All rights .. Tags: smd transistor m6 smd code book B3 transistor k2 smd transistor m7 smd diodes SMD CODE G7 512MB SDR SDRAM CHIP MT48H32M16LF MT48H16M32LF LG |
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First line: 512Mb: DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 banks MT47H64M8 banks MT47H32M16 banks latest data sheet, refer Micron's site: http://www.micron.com/ddr2 Abstract: .. 512Mb: x4, x8, x16 DDR2 SDRAM Features. PDF: 09005aef8117c18e/Source: 09005aef8211b2e6 .. 512MbDDR2TOC.fm - Rev. K 8/06 EN 2 ©2004 Micron Technology, Inc. All rights reserved. 512Mb .. Tags: MT47H32M16 MT47H128M4 MT47H64M8 MT47H32M16 |
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First line: 512Mb: Mobile SDRAM Features Mobile Low-Power SDRAM MT48H32M16LF banks MT48H16M32LF/LG banks Features VDD/VDDQ 1.7-1.95V Fully synchronous; signals registered positive edge system clock Internal, pipelined operation; column address changed every clock cycle Four internal banks concurrent operation P Abstract: .. PDF: 09005aef82ea3742 512mb_mobile_sdram_y47m.pdf - Rev. G 08/09 EN 1. Micron Technology .. Figure 1: 512Mb Mobile LPSDR Part Numbering. MT 48 H 32M16 LF BF -75 IT :B. Micron Technology .. Tags: MT48H32M16LF MT48H16M32LF LG |
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First line: mw 2000 lpddr ddr2 ram lpddr* RAM's Power Consumption Comparison Power Consumption: DDR2/LPDDR FCRAM Power Consumption (mW) Conditions 512M-bit, 3.2GByte/s, data efficiency 100% Abstract: .. 512Mbit FCRAM. DDR2. LPDDR. Power consumption of termination resistors. Lower power consumption .. Tags: lpddr* ddr2 ram lpddr mw 2000 datasheet abstract.. |
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First line: hy27uf082G2* th58* SDTNGAHE0-512* SDTNFDH-2048* hy27uf082G* Create i5062-ZD i5062-ZD Flash Disk Controller Data Sheet Abstract: .. 512Mbit 64MByte HY27US08121. 1Gbit 128MByte HY27UA081G1, HY27UA081G4. 2Gbit 256MByte .. 2Gbit 256MByte Large Block HY27UG082G2, HY27UF082G2 4Gbit 512MByte Large Block .. Tags: hy27uf082G* SDTNFDH-2048* SDTNGAHE0-512* th58* hy27uf082G2* toshiba flash memory 8gb TH58100FT tc58nvg* TC58DVG1* TC58DVG04b1FT TC58DVG02A1FT SDTNFcH-512* sdtnfch 512 sdtnfah-512* SDTNFAH-256 SDTNFAH-128* i5062-ZD |
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First line: 512MB(64Mx64) SODIMM Solution Samsung's proposal 512Mb based 512MB SODIMM!! Solution Based Component Package Type Dies Component Org. Loading CLK, CKE, Size Module Thickness Availability 3.80 Max. (150mil Max.) 2Q'02 Mono 512Mb TSOP2 8pcs Solution 512Mb TSOP2 16pcs 256Mb Solution Stacked 512Mb Stack Abstract: .. Samsung’s proposal is DDP 512Mb based 512MB SODIMM!! 67.56 x 31.75 mm x mm 2660 x 1250 mil x mil .. 256MB 128Mb sTSOP vs 512MB DDP 512Mb 128Mb .. Tags: datasheet abstract.. |
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First line: 512Mb: DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 banks MT47H64M8 banks MT47H32M16 banks Features +1.8V ±0.1V, VDDQ +1.8V ±0.1V JEDEC-standard 1.8V (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Duplicate output strobe (RDQS) option align t Abstract: .. PDF: 09005aef82f1e6e2 512MbDDR2.pdf - Rev. Q 10/10 EN 1. Micron Technology, Inc. reserves the .. Figure 1: 512Mb DDR2 Part Numbers. Example Part Number: MT47H128M4B6-25E :D. Configuration .. Tags: mt47h32m16 MT47H128M4 MT47H64M8 MT47H32M16 |
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First line: 512Mb: DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 banks MT47H64M8 banks MT47H32M16 banks Features +1.8V ±0.1V, VDDQ +1.8V ±0.1V JEDEC-standard 1.8V (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Duplicate output strobe (RDQS) option align t Abstract: .. PDF: 09005aef82f1e6e2 512MbDDR2.pdf - Rev. O 7/09 EN 1. Micron Technology, Inc. reserves the .. Figure 1: 512Mb DDR2 Part Numbers. Example Part Number: MT47H128M4B6-25E :D. Configuration .. Tags: Theta JC of FBGA WMM marking code outline of the heat sink for 12 x 12 FBGA LM 324 four amplifier MT47H128M4 MT47H64M8 MT47H32M16 |
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First line: 512MB 100-Ball XDR 1gb Rev. 0.0, Dec.2009 features comparison with 512Mb guide user DRAM Rev.0.0 Abstract: .. 1Gb XDR features comparison with 512Mb. A guide for user to use XDR DRAM. Rev. 0.0, Dec.2009. 2 .. 512Mb E-die. 100 Ball Package ball. 2. XDR DRAM package ballout comparison [Table 2] XDR DRAM .. Tags: XDR 1gb 100-Ball 512MB transistor Comparison Tables datasheet abstract.. |
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First line: movinand* 1g nand mcp movinand DECODER movinand 16G movinand MOVI NAND Code Information(/3) Last Updated November 2008 KMXXXXXXXX XXXXXXX Abstract: .. 512MByt e. I. x8. 2.7V ~ 3.6V. 2.7V ~ 3.6V. ML C. 8G*3 3GByte H. x8. 2.7V ~ 3.6V. 2.7V ~ 3.6V. ML C. 4G*2 1GByte G. x8. 2 .. 512MByt e. A. None 0. Org Vccq Vcc. Ce ll. NAND Den. moviNAN D Den. Co de. - 2 - Part Number Decoder. Last .. Tags: movinand movinand 16G movinand DECODER 1g nand mcp movinand* datasheet abstract.. |
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First line: 512Mb: SDRAM Features Double Data Rate (DDR) SDRAM MT46V128M4 Banks MT46V64M8 Banks MT46V32M16 Banks Features +2.5V ±0.2V, VDDQ +2.5V ±0.2V +2.6V ±0.1V, VDDQ +2.6V ±0.1V (DDR400) Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous dat Abstract: .. 512Mb_DDR_x4x8x16_D1.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN 1 ©2000 Micron Technology .. 512Mb_DDR_x4x8x16_D1.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN 2 ©2000 Micron Technology .. Tags: MT46V64M8 datasheet abstract.. |
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First line: 512Mb: SDRAM Features Double Data Rate (DDR) SDRAM MT46V128M4 banks MT46V64M8 banks MT46V32M16 banks Features +2.5V ±0.2V, VDDQ +2.5V ±0.2V +2.6V ±0.1V, VDDQ +2.6V ±0.1V (DDR400) Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous dat Abstract: .. 512Mb_DDR_x4x8x16_D1.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN 1 ©2000 Micron Technology .. 512Mb_DDR_x4x8x16_D1.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN 2 ©2000 Micron Technology .. Tags: PC3200 datasheet abstract.. |
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First line: SDTNFAH-128* HY27UB082G4M* SDTNFAH-256 sdtn* MT29F2G08AAA Create i5062-ZD i5062-ZD Flash Disk Controller Data Sheet Abstract: .. 512Mbit 64MByte HY27US08121M. 1Gbit 128MByte HY27UA081G1M, HY27UA081G4M. 2Gbit .. 512Mbit 64MByte K9K1208U0, K9F1208U. 1Gbit 128MByte K9K1G08U0, K9T1G08U0. 2Gbit .. Tags: MT29F2G08AAA HY27UB082G4M* toshiba MLC nand flash TC58DVG1* TC58DVG02A1FT SDTNFcH-512* sdtnfch 512 sdtnfah-512* SDTNFAH-256 SDTNFAH-128* sdtn* sandisk usb flash drive SANDISK NAND* i5062-ZD |
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First line: 64Mx4 BGA OUTLINE DRAWING ISSD64M8PBB 512Mb (64Mbits SDRAM Memory Stack GENERAL DESCRIPTION Irvine Sensors Corporation developed next generation stacked memory that fits within identical JEDEC monolithic outline single chip. 512Mbit Stacked-SDRAM high-speed random-access memory. design package allow Abstract: .. FEATURES • 512Mbit Two stacked Micron 256Mbit 32Mbit x 4 SDRAMs • Micron Part Number .. The 512Mbit Stacked-SDRAM is a high-speed random-access memory. The design of the package .. Tags: BGA OUTLINE DRAWING 64Mx4 datasheet abstract.. |
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First line: electronic* 18ea Profile Registered DIMM (For System) MEMORY DIVISION SAMSUNG ELECTRONICS Co., This presentation material subject change without notice. Abstract: .. - Current available density is 128MB, 256MB, 512MB and 1GB. • The Best Solution for Slim / 1U .. • x4 base 1U RDIMM - Density: 256Mbyte, 512Mbyte, 1Gbyte - Status . Under Evaluation . External .. Tags: 18ea electronic* sdram pcb layout 64Mb samsung SDRAM 64MB* 512m pc133 SDRAM DIMM 512M 1gb pc133 SDRAM DIMM 128mb 10ohm datasheet abstract.. |
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First line: K8S6415ET Synchronous (burst) mode register setting Application Note Version 1.0, May-2009 Samsung Electronics Copyright 2006 Samsung Electronics Co.,LTD. Abstract: .. 4.1 Burst mode configuration register table for 256 / 512Mbit. 4.2 Burst mode configuration .. 5.1 Extended configuration register table for 256 / 512Mbit. 5.2 Extended configuration .. Tags: K8S6415ET Synchronous (burst) mode register setting for NOR |
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First line: memory samsung samsung ddr SAMSUNG TSOP Product Planning Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., Product Planning Product Planning Application Eng. Team Application Eng. Team Abstract: .. DDR 256Mb/512Mb Industrial Temp. April 2004. Product Planning & Application Engineering Team .. 512Mb. • Refresh cycle Normal : Ta 85 °C â To support Industrial temperature -40 °C ~ 85 °C part .. Tags: samsung ddr SAMSUNG TSOP memory samsung 512MB datasheet abstract.. |
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First line: micron MCP 32GB* 1g nand mcp flash chip 512mb 64gb NAND chip MCP/PoP Part Numbering System Micron's part numbering system available www.micron.com/numbering Multichip Packages Abstract: .. 12M = 512Mb 52M = 1,152Mb 96M = 4Gb 40M = 640Mb 48M = 2Gb 92M = 8Gb LPDRAM Access Time. -5 = 200 MHz CL3 .. 512Mb 512Mb 512Mb. 512Mb. 512Mb + 128Mb. Density. 512Mb 512Mb. 512Mb. 256Mb 256Mb 256Mb 256Mb. 1Gb 1Gb .. Tags: 64gb NAND chip flash chip 512mb 1g nand mcp 32GB* micron MCP datasheet abstract.. |
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First line: TN-48-08 DESIGNING SDRAM FUTURE UPGRADES standard life cycle DRAM component order five years before market pushes larger density components. However, with emergence designs, this cycle becoming less concern. Today's SDRAM components being designed accommodate seamless migration higher densities with Abstract: .. x32 configurations does not increase to 8,192 until the 512Mb device. The extra row in the x4, x8 .. of the 256Mb and 512Mb SDRAM components causes the distributive refresh rate to be cut in half .. Tags: TN-48-08 |
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First line: 512MB NOR FLASH Irvine Sensors "NOR Flash" 512MB k9f1208uo* K9F1208UOM Part ISNF128M16LTC Irvine Sensors Corporation Microelectronics Products Division Abstract: .. of the art Samsung 512Mbit TSOP’s Highest density memory available today. Low cost, economical .. Samsung 512MB Flash Device. Control Common Data Sheet Part No. ISNF128M16LTC. Irvine Sensors .. Tags: "NOR Flash" 512MB tsop sensor SAMSUNG TSOP samsung 512MB NOR FLASH SAMSUNG* k9f1208uom* k9f1208uo* Irvine Sensors Flash Memory SAMSUNG 512MB* (Synchronous DRAM) and Samsung ISNF128M16LTC |
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First line: SDRAM 133MHz EDO sdram Hitachi DRAM Part Numbering System Elpida Memory, Inc. 2000, 2001 ECT-TS-0198 December 2001 Hitachi DRAM Component Parts Numbering System Abstract: .. 2. Hitachi SDRAM Module Parts Numbering System HB 52 64 9 E1 e.g. 512MB Registered DIMM 1 2 .. 64 : 64MByte, 128 : 128MByte, 256 : 256MByte 512 : 512MByte, 1G : 1GByte. 5 Organization I/O bit .. Tags: EDO sdram SDRAM 133MHz hitachi part "numbering" datasheet abstract.. |
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First line: KVR800D2S8P5K2* KVR800D2S8P5K2/1G DESCRIPTION: ValueRAM's KVR800D2S8P5K2/1G 72-bit (512MB) DDR2-800 SDRAM (Synchronous DRAM) "single rank" Registered w/Parity memory modules. Total capacity (512MB). components EACH module include nine 8-bit DDR2800 SDRAM FBGA packages. Each 240-pin DIMM us Abstract: .. Total kit capacity is 1GB 512MB . The components on EACH module include nine 64M x 8-bit DDR2 .. KVR800D2S8P5K2/1G 1GB 512MB 64M x 72-Bit x 2 pcs. DDR2-800 CL5 Registered w/Parity 240-Pin .. Tags: KVR800D2S8P5K2* datasheet abstract.. |
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First line: free circuit diagram of motherboard pdf download tv china kit diagram msystems OMAP 4470 OMAP 4470 datasheet mDOC (512MByte) (1GByte) High Capacity Flash Disk with NAND Technology Data Sheet, Rev. Highlights Abstract: .. mDOC H1 4Gb 512MByte and 8Gb 1GByte High Capacity Flash Disk with NAND and x2 Technology .. mDOC H1 4Gb 512MByte and 8Gb 1GByte 2 Data Sheet, Rev. 1.1 95-DT-1104-01. Ñ 4-bit Error .. Tags: OMAP 4470 datasheet OMAP 4470 tv china kit diagram free circuit diagram of motherboard pdf download xgold MSYSTEMS Emblaze Semiconductor 512MB* 16GB Nand flash datasheet abstract.. |
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First line: datasheet DIMM DDR333 pc2700 memory Memory Module Data Sheet L6464S36 512MB 64-bit DDR333 (PC2700) SoDIMM SPECIFICATIONS; 512MB (64M 64-bit) Unbuffered DDR333 SoDIMM TSOP Bank/200Mhz) Eight DRAM 200-pin Small Outline Dual Inline memory module with Gold Plated Contacts Dimm Dimensions 67.6 31.75 (mm) Abstract: .. • 512MB 64M x 64-bit Unbuffered DDR333 SoDIMM. • TSOP II 32M x 16 8M x 16 bit x 4 Bank/200Mhz x .. Tags: datasheet DIMM DDR333 ddr333 pc2700 memory DDR333 datasheet abstract.. |
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First line: SODIMM ddr2 Memory Module Data Sheet L646443E 512MB 64-bit DDR2 (PC4300) SODIMM SPECIFICATIONS; 512MB (64M 64-bit) Unbuffered DDR2 SODIMM FBGA Bank/200Mhz) Eight DRAM 200-pin Small Outline Dual Inline memory module with Gold Plated Contacts Dimm Dimensions 67.6 (mm) Programmable Latency Supported Cy Abstract: .. • 512MB 64M x 64-bit Unbuffered DDR2 533 SODIMM. • FBGA 32M x 16 8M x 16 bit x 4 Bank/200Mhz x .. Tags: SODIMM ddr2 DDR2-533* ddr2 512MB PC4300 |
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First line: DDR2-533 T646424E Memory Module Data Sheet T646424E 512MB 64-bit DDR2 (PC2-4200) SPECIFICATIONS; 512Mb (64M 64-bit) Unbuffered DDR2 533Mhz DIMM 84-ball FBGA (16M Bank/200Mhz) Eight DRAM 240-pin Dual in-line memory module with Gold Plated Contacts Dimm Dimensions 133.35 (mm) Programmable Latency Supp Abstract: .. • 512Mb 64M x 64-bit Unbuffered DDR2 533Mhz DIMM. • 84-ball FBGA 64M x 8 16M x 8 bit x 4 Bank .. Tags: T646424E DDR2-533 pc2-4200* ddr2 T646424E |
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First line: PC2100 ddr266 datasheet Memory Module Data Sheet L6464S35 512MB 64-bit DDR266 (PC2100) SoDIMM SPECIFICATIONS; 512MB (64M 64-bit) Unbuffered DDR266 SoDIMM TSOP Bank/200Mhz) Eight DRAM 200-pin Small Outline Dual Inline memory module with Gold Plated Contacts Dimm Dimensions 67.6 31.75 (mm) Programmabl Abstract: .. • 512MB 64M x 64-bit Unbuffered DDR266 SoDIMM. • TSOP II 32M x 16 8M x 16 bit x 4 Bank/200Mhz x .. Tags: ddr266 datasheet PC2100 DDR266 |
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First line: datasheet DIMM DDR400 PC3200 Memory Module Data Sheet L6464S37 512MB 64-bit DDR400 (PC3200) SoDIMM SPECIFICATIONS; 512MB (64M 64-bit) Unbuffered DDR400 SoDIMM TSOP Bank/200Mhz) Eight DRAM 200-pin Small Outline Dual Inline memory module with Gold Plated Contacts Dimm Dimensions 67.6 31.75 (mm) Progra Abstract: .. • 512MB 64M x 64-bit Unbuffered DDR400 SoDIMM. • TSOP II 32M x 16 8M x 16 bit x 4 Bank/200Mhz x .. Tags: datasheet DIMM DDR400 PC3200 PC3200 ddr400 512MB datasheet abstract.. |
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First line: Memory Module Data Sheet H646444E 512MB 64-bit DDR2 (PC4300) SODIMM SPECIFICATIONS; 512MB (64M 64-bit) Unbuffered DDR2 SODIMM FBGA Bank/200Mhz) Eight DRAM 200-pin Small Outline Dual Inline memory module with Gold Plated Contacts Dimm Dimensions 67.6 (mm) Programmable Latency Supported Cycle Time (tR Abstract: .. • 512MB 64M x 64-bit Unbuffered DDR2 533 SODIMM. • FBGA 32M x 16 8M x 16 bit x 4 Bank/200Mhz x .. Tags: SODIMM ddr2 DDR2 PC4300 |
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First line: KVR667D2U5 microDIMM 214 microDIMM* KVR667D2U5/512 512MB 64-Bit DDR2-667 214-Pin MicroDIMM DESCRIPTION: This document describes ValueRAM's 64-bit (512MB) D2-667 SDRAM (Synchronous DRAM) memory module. components this module include eight 16-bit 16-bit Bank) DDR2-667 SDRAM FBGA packages. This 214-pin Abstract: .. 64M x 64-bit 512MB D2-667 CL5 SDRAM Synchronous DRAM memory module. The components on this .. KVR667D2U5/512 512MB 64M x 64-Bit DDR2-667 CL5 214-Pin MicroDIMM. Page 1. Document No. .. Tags: microDIMM* microDIMM 214 KVR667D2U5 datasheet abstract.. |
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First line: KVR400D2S8R3 KVR400D2S8R3/512 512MB 72-Bit DDR2-400 Single Rank Registered 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 72-bit (512MB) DDR2-400 SDRAM (Synchronous DRAM) single rank registered memory module.The components this module include nine 8-bit (16M 8-bit Bank) DDR2-400 SDRAM Abstract: .. 64M x 72-bit 512MB DDR2-400 CL3 SDRAM Synchronous DRAM single rank registered ECC memory .. KVR400D2S8R3/512 512MB 64M x 72-Bit x DDR2-400 CL3 Single Rank Registered 240-Pin ECC DIMM .. Tags: KVR400D2S8R3 datasheet abstract.. |
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First line: microDIMM 214 KVR533D2U4/512 512MB 64-Bit DDR2-533 214-Pin MicroDIMM DESCRIPTION: This document describes ValueRAM's 64-bit (512MB) DDR2-533 SDRAM (Synchronous DRAM) memory module. components this module include eight 16-bit 16-bit Bank) DDR2-533 SDRAM FBGA packages. This 214-pin MicroDIMM requires Abstract: .. 64M x 64-bit 512MB CL4 DDR2-533 SDRAM Synchronous DRAM memory module. The components on .. KVR533D2U4/512 512MB 64M x 64-Bit DDR2-533 CL4 214-Pin MicroDIMM. Page 1. Document No. .. Tags: microDIMM 214 datasheet abstract.. |
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First line: KVR533D2S8R4/512 512MB 72-Bit DDR2-533 Registered 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 72-bit (512MB) DDR2-533 SDRAM (Synchronous DRAM) "single rank" registered memory module. components this module include nine 8-bit DDR2-533 SDRAM FBGA packages. This 240-pin DIMM Abstract: .. This document describes ValueRAM's 64M x 72-bit 512MB DDR2-533 CL4 SDRAM Synchronous .. KVR533D2S8R4/512 512MB 64M x 72-Bit DDR2-533 CL4 Registered 240-Pin ECC DIMM .. Tags: datasheet abstract.. |
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First line: DDR400 KVR400S8R3AL/512 512MB 72-Bit DDR400 Registered 184-Pin DIMM DESCRIPTION: This document describes ValueRAM's 72-bit (512MB) DDR400 SDRAM (Synchronous DRAM) low-profile "single rank" registered memory module. components this module include nine 8-bit (16M 8-bit Bank) DDR400 SDRAM FBG Abstract: .. This document describes ValueRAM's 64M x 72-bit 512MB DDR400 CL3 SDRAM Synchronous DRAM .. KVR400S8R3AL/512 512MB 64M x 72-Bit DDR400 CL3 Registered 184-Pin ECC DIMM .. Tags: DDR400 datasheet abstract.. |
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First line: KVR667D2S8P5/512 DESCRIPTION: This document describes ValueRAM's 72-bit (512MB) DDR2-667 SDRAM (Synchronous DRAM) "single rank" Registered w/Parity memory module. components this module include nine 8-bit (16M 8-bit Bank) DDR2-667 SDRAM FBGA packages. This 240-pin DIMM uses gold contact fi Abstract: .. 64M x 72-bit 512MB DDR2-667 CL5 SDRAM Synchronous DRAM "single rank" Registered w/Parity .. KVR667D2S8P5/512 512MB 64M x 72-Bit DDR2-667 CL5 Registered w/Parity 240-Pin DIMM .. Tags: datasheet abstract.. |
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First line: KVR333X72C25/512 512MB 72-Bit DDR333 CL2.5 184-Pin DIMM DESCRIPTION: This document describes ValueRAM's 72-bit (512MB) DDR333 CL2.5 SDRAM (Synchronous DRAM) memory module. components this module include eighteen 8-bit 8-bit Bank) DDR333 SDRAM TSOP packages. This 184pin DIMM uses gold contact fingers Abstract: .. 64M x 72-bit 512MB DDR333 CL2.5 SDRAM Synchronous DRAM ECC memory module. The components .. KVR333X72C25/512 512MB 64M x 72-Bit DDR333 CL2.5 ECC 184-Pin DIMM .. Tags: datasheet abstract.. |
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First line: KVR333S8R25L/512 512MB 72-Bit DDR333 CL2.5 Registered 184-Pin DIMM DESCRIPTION: This document describes ValueRAM's 72-bit (512MB) DDR333 CL2.5 SDRAM (Synchronous DRAM) low-profile "single rank" registered memory module. components this module include nine 8-bit (16M 8-bit Bank) DDR333 SDRA Abstract: .. This document describes ValueRAM's 64M x 72-bit 512MB DDR333 CL2.5 SDRAM Synchronous .. KVR333S8R25L/512 512MB 64M x 72-Bit DDR333 CL2.5 Registered 184-Pin ECC DIMM .. Tags: datasheet abstract.. |
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First line: toshiba Nand flash bga NAND Flash part number toshiba Part Number Reference Guide Toshiba NAND Flash Card Products Dec, 2003 File Memory Marketing Promotion Department Memory Division Toshiba Semiconductor Company Copyright 2003 Toshiba Corporation. rights reserved. Small Block 16KByte/Block) NAND Abstract: .. 128Mb / 256Mb / 512Mb / 1Gbit NAND Flash. 4 / Symbol Examples 1 b : Type of Flash. Type of Flash .. 512MByte 512M. 128MByte 128M. 256MByte 256M. 1GByte 1G02. 64MByte 064M. 32MByte. Density Symbol .. Tags: NAND Flash part number toshiba toshiba Nand flash bga datasheet abstract.. |
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First line: infineon-b Irvine Sensors Part ISSD128M4STB Irvine Sensors Corporation Abstract: .. accept either the monolithic 256Mbit TSOP or the 512Mbit stack interchangeably. This allows .. When the monolithic 512Mbit TSOP becomes more cost effective than the 256Mbit based stack .. Tags: infineon-b tsop sensor micron 3001 Irvine Sensors hitachi part "numbering" ISSD128M4STB |
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First line: st nand Part ISDD64M8STB Irvine Sensors Corporation Abstract: .. TSOP or the 512Mbit stack interchangeably. This allows for switching between the stack and the .. When the monolithic 512Mbit TSOP becomes more cost effective than the 256Mbit based stack, no .. Tags: st nand ISDD64M8STB |
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