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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER ri Buy
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver ri Buy
CSD19538Q3AT Texas Instruments 100V N-Channel NexFET Power MOSFET 8-VSONP -55 to 150 ri Buy

MOSFET 300V

Catalog Datasheet Type PDF Document Tags
Abstract: bipolar, Darlington, power MOSFET, or a GTO (Gate Turn Off) SCR. (A standard SCR can also be used with , these devices of which the 2N6487 2N6487 bipolar, TIP100 TIP100 Darlington, MTP12N06 MTP12N06 TMOS (power MOSFET) and MCR5050 MCR5050 , MCR5050 MCR5050 1802 300V 10A SL O W 120mA (40uS) 2.2AC« I M A X OO mS) 8% 11A 1 17 1.4V 2.0V 12% 5A 2 55 1.2V ... OCR Scan
datasheet

8 pages,
1237.46 Kb

TIP 133c transistor SCR GTO die N648 transistor GTO SCR TIP 133c gto Gate Drive circuit EB108 EB108 abstract
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Abstract: , Scope Th ¡ s spec ¡ f í e s Fu j ì powe r MOSFET 2. 3. 4. 5. Construction Application O u tv i e w 2 S K 2 6 4 5 - 0 1 MR N-channe! enhancement mode power MOSFET for switching TQ-220F TQ-220F O u t v i e w , ds = 25V V QS= ov f =1MHz 150 C r ss t d(on) 70 25 V c c = 300V V GS = 10V I d = 9A R a s = ... OCR Scan
datasheet

13 pages,
467.3 Kb

Asus K2645 diode ci k2645 k-2645 P 01 K2645 K2645 mosfet k2645 datasheet abstract
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Abstract: bipolar, Darlington, power MOSFET, or a GTO (Gate Turn Off) SCR. (A standard SCR can also be used with , these devices of which the 2N6487 2N6487 bipolar, TIP100 TIP100 Darlington, MTP12N06 MTP12N06 TMOS (power MOSFET) and MCR5050 MCR5050 , MCR5050 MCR5050 1802 300V 10A SL O W 120mA (40uS) 2.2AC« I M A X OO mS) 8% 11A 1 17 1.4V 2.0V 12% 5A 2 55 1.2V ... OCR Scan
datasheet

8 pages,
1237.46 Kb

transistor GTO SCR LG direct drive motor gto Gate Drive circuit EB108 EB108 abstract
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Abstract: STD9NM60N STD9NM60N - STD9NM60N-1 STD9NM60N-1 STP9NM60N STP9NM60N - STF9NM60N STF9NM60N N-channel 600V - 0.47 - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmeshTM Power MOSFET General features VDSS (@Tjmax) Type RDS(on) ID 3 2 1 STD9NM60N STD9NM60N 650V , Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the , Typ. Max. 30 20 60 15 VDD =300V, ID=4.5A, RG=4.7, VGS=10V (see Figure 17) Unit ns ns ... Original
datasheet

17 pages,
402.84 Kb

STP9NM60N STD9NM60N-1 P9NM60N JESD97 F9NM60N STF9NM60N STD9NM60N STD9NM60N abstract
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Abstract: STB15NM60N STB15NM60N - STF/I15NM60N STF/I15NM60N STP15NM60N STP15NM60N - STW15NM60N STW15NM60N N-channel 600V - 0.270 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmeshTM Power MOSFET Features Type STB15NM60N STB15NM60N STI15NM60N STI15NM60N STF15NM60N STF15NM60N STP15NM60N STP15NM60N STW15NM60N STW15NM60N VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.299 < 0.299 < 0.299 < 0.299 < 0.299 , This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to , Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300V, ID = 7A, RG ... Original
datasheet

18 pages,
595.65 Kb

STB15NM60N STF/I15NM60N STP15NM60N STW15NM60N STI15NM60N STF15NM60N STB15NM60N abstract
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Abstract: Typical values may be Vi = 300V, Vout = 400V and Fs = 70kHz. If the system is operating in continuous , reduction in the cost of the filter. Power MOSFET transistors are practical and cost effective in , solution for applications in the 1 to 3kW range. This device combines a low RDS(on) Power MOSFET with an ... Original
datasheet

9 pages,
398.12 Kb

VDE0871B 3000w power amplifier Circuit power amplifier 3000w circuit diagram buck converter 3kw smps 1500W smps 3000W 3000w pfc TRANSISTOR 3000W 400V 3000w power amplifier circuit diagram STTA2006DI power amplifier 3000w diagram 3000W power supply IEC555 EN60555 IEC555 abstract
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Abstract: circuit. BVCEO 300V 400V 4~500V 4.2.2 Current-fed topology As can be seen in the waveforms , In many cases, there can be very little to choose between a Power MOSFET and a Power Bipolar in an , choice for this reason. However, the Power MOSFET does not have the problems associated with variations ... Original
datasheet

10 pages,
65.47 Kb

conventional fluorescent lamp starter 220v 25a diode bridge SIMPLE ELECTRONIC BALLAST FLUORESCENT LIGHT BALLAST Fluorescent BALLAST low loss electronic starter fluorescent cfl ballast passive pfc corrector power generator control circuit 220v start-up transformer current limiter 220v 2a diode bridge 220/240V 220/240V abstract
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Abstract: AUTOMOTIVE GRADE PD- 96423A AUIRF7478Q AUIRF7478Q Features l l l l l l l l l HEXFETо Power MOSFET S S S G 1 2 3 4 8 7 Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150-'C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax , ннн 52 100 2.3 A 56 1.3 78 150 V ns nC Conditions MOSFET symbol showing the integral reverse G D , level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M3(+/- 300V ) (per ... Original
datasheet

11 pages,
190.84 Kb

AUIRF7478Q AUIRF7478Q abstract
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Abstract: . Power MOSFET 1.2.1 1.2.2 1.2.3 1.2.4 1.2.5 1.2.6 1.2.7 1.2.8 1.2.9 PowerMOS , MOSFET Switching Behaviour . Power MOSFET Drive Circuits , Design Examples 2.3.1 Mains Input 100 W Forward Converter SMPS: MOSFET and Bipolar Transistor Solutions , a 20 kHz System . 3.1.2 The Effect of a MOSFET's Peak to Average Current Rating on , Designers Guide to PowerMOS Devices for Motor Control . 3.1.5 A 300V, 40A High Frequency ... Original
datasheet

34 pages,
179.45 Kb

12v -230v 200W inverter CIRCUIT DIAGRAM 40 w self oscillating ballast philips transistor advantages of push pull inverter TELEVISION EHT TRANSFORMERS 40w ELECTRONIC choke BALLAST DIAGRAM current fed push pull topology datasheet abstract
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Abstract: lower MOSFET as shown in Figure 4. In the case of the buck converter, the load provides a path to , supplying peak currents of at least 2.0A, which means that a power MOSFET device with 3000pF gate source , on most MOSFET data sheets. Figure 7 shows a curve for a Harris IRF450 IRF450 MOSFET. By designing the bootstrap circuit to supply the total required gate charge shown on the MOSFET data sheet, the designer has , dependent on the power MOSFET or IGBT used. The iON pulse, for example, may come and go before any ... Original
datasheet

8 pages,
65.59 Kb

400V igbt dc to dc buck converter Harris CMOS Integrated Circuits 300V transistor npn 2a HIP2500 equivalent 1N5622 impedance matching transformer IRF450 IRF450 application N CHANNEL MOSFET 10A 1000V SCHEMATIC POWER SUPPLY WITH IGBTS Signal Path Designer switched reluctance motor IGBT AN9010 AN9010 abstract
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