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Complementary Audio Power Amplifier

Catalog Datasheet Type PDF Document Tags
Abstract: Reference Low Power: 290 mW Power-Down Mode: 9 mW Package: 48-Pin Thin Quad Flat Pack (TQFP) APPLICATIONS , impedance ratio (resulting in an output power of 4 dBm) and 1:1 impedance ratio transformer (­2-dBm output power) are supported. Please be aware that an important notice concerning availability, standard , bits of DA high. DACA complementary current output. Full scale with all bits of DA low. DACB current output. Full scale with all bits of DB high. DACB complementary current output. Full scale with all bits ... Original
datasheet

27 pages,
523.18 Kb

DAC5652-EP SGLS341B 10-BIT 200-MSPS DAC5652-EP abstract
datasheet frame
Abstract: Interleaved Data On-Chip 1.2-V Reference Low Power: 290 mW Power-Down Mode: 9 mW Package: 48-Pin Thin Quad , load. For a 20-mA full-scale output current, both a 4:1 impedance ratio (resulting in an output power of 4 dBm) and 1:1 impedance ratio transformer (­2-dBm output power) are supported. Please be aware , of DA high. IOUTA2 45 O DACA complementary current output. Full scale with all bits of DA , O DACB complementary current output. Full scale with all bits of DB low. MODE 48 I ... Original
datasheet

27 pages,
523.44 Kb

IS-136 DAC5662 DAC5652 DAC5652-EP SGLS341B 10-BIT 200-MSPS DAC5652-EP abstract
datasheet frame
Abstract: 2SD1221 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application · Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Unit: mm Complementary to 2SB906 2SB906 : VCE (sat) = 0.4 V (typ.) (IC = 3 A , power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC , mm (3) No heat sink Collector current IC PC (W) Collector power dissipation 20 16 12 ... Original
datasheet

4 pages,
145.56 Kb

D1221 2SD1221 2SB906 2SD1221 abstract
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Abstract: stage of a Hi-Fi audio amplifier 20.0±0.5 (2.5) Solder Dip Features 5.0±0.3 (3.0) ue pl , Power Transistors 2SB1317 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 2SD1975 Unit: mm Collector-emitter voltage (Base open) Emitter-base , PC Collector power dissipation 0.6±0.2 V IC Peak collector current 2.7±0.3 , 100-100-2mm Al heat sink (3)Without heat sink (PC=3.5W) Collector current IC (A) Collector power ... Original
datasheet

4 pages,
206.17 Kb

2SD1975 2SB1317 2SB1317 abstract
datasheet frame
Abstract: stage of a Hi-Fi audio amplifier 20.0±0.5 (2.5) Solder Dip Features 5.0±0.3 (3.0) ue pl , Power Transistors 2SB1347 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 2SD2029 Unit: mm Collector-emitter voltage (Base open) Emitter-base , PC Collector power dissipation 0.6±0.2 V IC Peak collector current 2.7±0.3 , 100-100-2mm Al heat sink (3)Without heat sink (PC=3.5W) Collector current IC (A) Collector power ... Original
datasheet

4 pages,
206.24 Kb

2SD2029 2SB1347 2SB1347 abstract
datasheet frame
Abstract: 2SB906 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) 2SB906 2SB906 Audio Frequency Power Amplifier Application · Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Unit: mm Complementary to 2SD1221 2SD1221 : VCE (sat) = -1.0 V (typ.) (IC = -3 , Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range , Collector current IC PC (W) Collector power dissipation 20 (1) 100 ms* -5 (1) Tc = Ta ... Original
datasheet

4 pages,
153.39 Kb

B906 2SD1221 2SB906 2SB906 abstract
datasheet frame
Abstract: 2SD1221 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application · Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Unit: mm Complementary to 2SB906 2SB906 : VCE (sat) = 4.0 V (typ.) (IC = 3 A , power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC , Collector current IC PC (W) Collector power dissipation 20 16 12 8 4 3 10 ms* IC ... Original
datasheet

4 pages,
145.55 Kb

d1221 2SD1221 2SB906 2SD1221 abstract
datasheet frame
Abstract: frequency fT � Optimum for the output stage of a Hi-Fi audio amplifier 26.0�5 (3.0) (1.5) (1.5 , Power Transistors 2SB1347 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 2SD2029 Features Unit: mm 20.0�5 (10.0) (6.0) (2.0) (4.0) 5.0�3 (3.0 , current Collector power dissipation Ta = 25癈 Junction temperature Storage temperature , (PC=3.5W) IC VCE -24 IC VBE -24 TC=25癈 VCE=� Collector power dissipation PC (W) -20 ... Original
datasheet

4 pages,
205.82 Kb

2SB1347 2SD2029 2SB1347 abstract
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Abstract: Power Transistors 2SD1975 2SD1975 Silicon NPN triple diffusion planar type Unit: mm (10.0) (6.0) (2.0) (4.0) For high power amplification Complementary to 2SB1317 2SB1317 Features · Excellent collector current , frequency fT · Optimum for the output stage of a HiFi audio amplifier 20.0±0.5 3.3±0.2 5.0±0.3 (3.0 , Collector power dissipation Ta = 25°C Junction temperature Storage temperature Electrical , IB=1000mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA IC VBE 24 VCE=5V Collector power dissipation PC ... Original
datasheet

4 pages,
204.85 Kb

2SD1975 2SD1975 abstract
datasheet frame
Abstract: frequency fT � Optimum for the output stage of a Hi-Fi audio amplifier 26.0�5 (3.0) (1.5) (1.5 , Power Transistors 2SB1317 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 2SD1975 Features Unit: mm 20.0�5 (10.0) (6.0) (2.0) (4.0) 5.0�3 (3.0 , current Collector power dissipation Ta = 25癈 Junction temperature Storage temperature , 300mA �0mA IC VBE -24 VCE=� Collector power dissipation PC (W) Collector current IC (A ... Original
datasheet

4 pages,
205.81 Kb

2SB1317 2SD1975 2SB1317 abstract
datasheet frame