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-F/msc 0645

Catalog Datasheet Type PDF Document Tags
Abstract: 25 S VDS = 25V, f = 1MHz, VGS = 0 2200 380 49 pF pF pF f=1 MHz Gate DC Bias = 0 , )SW1 * I 2 * L R DS(on)SW2 * I 2 * (1 - ) L Vin * (Q gsth(SW1) + Q gd(SW1) ) * f * IL Ig , ) * f Conductio n Not applicable Vf(SW2) * I L * t deadtime * f Pgate(QG) Q g(SW1) * Vgg * f Q gls(SW2) * Vgg * f PQoss Vin * Q oss(SW1) * f Vin * Q oss(SW2) * f 2 2 , 0068772-F STD60NH03L STD60NH03L - STD60NH03L-1 STD60NH03L-1 Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm ... Original
datasheet

16 pages,
492.09 Kb

STD60NH03LT4 STD60NH03L-1 STD60NH03L JESD97 D60NH03L d60nh03 D60NH STD60NH03L abstract
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Abstract: L to Ku Band Low Noise N-Channel GaAs MESFET FEATURES · LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz NE71383B NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY · HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz · GATE WIDTH: Wg = 280 \im · GATE LENGTH: l_G = 0.3 , performance. Frequency, f (GHz) ELECTRICAL CHARACTERISTICS , PARAMETERS AND CONDITIONS Noise Figure , V d s = 3 V , Id s V d s = 3 V , Id s = = 10 mA, f = 4 GHz 10 ... OCR Scan
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8 pages,
185.99 Kb

z 0607 datasheet abstract
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Abstract: RE P L A S T IC P A C K A G E (S O T - 343 ) LOW N O IS E F IG U R E : 0.6 dB typica l at 2 G H z , an ce. 0 .5 1 2 3 4 5 6 7 8 910 Frequency, f (GHz) 18 Package SOT -343 , at V ds = 2 V, Id = 5 mA, f = 2 GHz Associated Gain at V ds = 2 V, Id = 5 mA, f = 2 GHz Output Power at 1 dB Gain Compression Point, f = 2 GHz V ds = 2 V, Ids = 10 mA V ds = 3 V, Id s = 20 mA Gain at PidB, f = 2 GHz Vds = 2 V, Ids = 10 mA Vds = 3 V, Ids = 20 mA V ds = 2 V, Ids = 5 mA, f = 2 GHz Output ... OCR Scan
datasheet

8 pages,
259.43 Kb

ST 7702 nec 38018 LA 4127 ex 3863 21L MARKING nec D 8049 C datasheet abstract
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Abstract: 0.011 uc d ro P Min. Typ. s) t( Max. Unit 40 S VDS = 15V, f = , nC Gate input resistance f=1MHz Gate DC Bias =0 Test Signal Level =20mV Open Drain 1 , )SW1 * I 2 * L R DS(on)SW2 * I 2 * (1 - ) L Vin * (Q gsth(SW1) + Q gd(SW1) ) * f * IL Ig , ) * f Conductio n Not applicable Vf(SW2) * I L * t deadtime * f Pgate(QG) Q g(SW1) * Vgg * f Q gls(SW2) * Vgg * f PQoss Vin * Q oss(SW1) * f Vin * Q oss(SW2) * f 2 2 ... Original
datasheet

16 pages,
471 Kb

STD90NH02LT4 STD90NH02L JESD97 STD90NH02L-1 d90nh02l D90NH STD90NH02L abstract
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Abstract: TEST CONDITION VCB=5V, IE=0 VEB=1V, IC=0 VCE=3V, IC=10mA VCB=3V, IE=0, f=1MHz MIN. 75 7.0 - TYP. 0.4 12.0 8.5 1.5 MAX. 100 100 140 0.7 2.5 UNIT nA nA pF GHz dB dB VCE=3V, IC=10mA, f=2GHz VCE=3V, IC=10mA, f=2GHz VCE=3V, IC=3mA, f=2GHz Note 1) hFE Classification 1(01):75~110, 2(02):95~140. , Ta=25 C f =1.0MHz Ta=25 C hFE DC CURRENT GAIN 200 100 50 2 1 0.5 20 10 1 5 10 20 50 100 , FREQUENCY f T (GHz) 14 (dB) fT - IC VCE=3V f = 2GHz 12 Ta=25 C S21e 12 2 - IC 10 8 6 ... Original
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7 pages,
395.86 Kb

KTC3620V KTC3620V abstract
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Abstract: (Note2) fT |S21e|2 NF TEST CONDITION VCB=5V, IE=0 VEB=1V, IC=0 VCE=3V, IC=10mA VCB=3V, IE=0, f=1MHz MIN. , , f=2GHz VCE=3V, IC=10mA, f=2GHz VCE=3V, IC=3mA, f=2GHz Note 1) hFE Classification 1(01):75~110, 2(02 , ) VCE=3V Ta=25 C f =1MHz Ta=25 C hFE DC CURRENT GAIN 200 100 50 2 1 0.5 20 10 1 5 10 20 50 , ) TRANSITION FREQUENCY f T (GHz) 14 (dB) fT - IC VCE=3V f = 2GHz 12 Ta=25 C S21e 12 2 - IC 10 8 6 4 2 0 0.5 S21e INSERTION GAIN 8 4 VCE = 3V f = 2GHz Ta=25 C 2 1 2 5 10 ... Original
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7 pages,
396.72 Kb

M 0349 KTC3620U KTC3620U abstract
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Abstract: charge Gate-source charge Gate-drain charge c u d t(s )- VDS =25V, f=1MHz, VGS=0 VDD=15V, ID = 80A VGS =5V (see Figure 13) f=1MHz Gate Bias Bias=0 Test Signal Level=20mV open drain s b O , L * (1 - ) IL Ig Pswitching Vin * (Q gsth(SW1) + Q gd(SW1) ) * f * Zero voltage switching Recovery (1) Not applicable Vin * Q rr(SW2) * f Pdiode Conduction Not applicable Vf(SW2) * I L * t deadtime * f Pgate(QG) Q g(SW1) * Vgg * f PQoss Vin * Q oss(SW1) * f 2 1. ... Original
datasheet

16 pages,
304.89 Kb

D90N03L STD90N03L STD90N03L-1 STD90N03L abstract
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Abstract: , f=1MHz, VGS=0 VDD= 15V, ID = 40A VGS = 5V (see Figure 13) VDS = 24V ; VGS =0 f=1MHz Gate Bias Bias=0 Test , (SW1) + Q gd(SW1) ) * f * Zero Voltage Switching Recovery (1) Not applicable Vin * Q rr(SW2) * f Pdiode Conduction Not applicable Vf(SW2) * I L * t deadtime * f Pgate(QG) Q g(SW1) * Vgg * f PQoss Vin * Q oss(SW1) * f 2 1. Dissipated by SW1 during turn-on Table 8. , ) (s s b O t e l o r Q P e u d o 2 ) s ( ct gls(SW2) * Vgg * f Vin * Q oss(SW2 ... Original
datasheet

16 pages,
326.69 Kb

STD50N03L STD50N03L-1 STD50N03L abstract
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Abstract: Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=13dB typ (f=1GHz). High cut-off frequency : fT=7GHz , Gain Noise Figure Symbol fT Cob Cre 2 S21e 1 2 S21e 2 Conditions VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz Ratings min 5 typ , pF Collector Current, IC - mA 3 IT00638 IT00638 Cre - VCB f=1MHz Output Capacitance, Cre - pF f=1MHz 2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 7 ... Original
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5 pages,
259.06 Kb

transistor marking LN4 marking LN4 ENA1061 2SC5501A ENA1061 abstract
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Abstract: 15 V , I C = 6 A V G E = 0V , I F = 6 A I C = 0. 18m A , VCE=VGE Zero gate voltage , capacitance Crss f= 1 MH z - 11 - Gate charge QGate V C C = 48 0 V, I C =6 A - , = 6 A, V G E = 0/ 15 V , R G = 23 , 2) L =6 0 nH , 2) C = 4 0p F Energy losses include , - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 6 A, - 190 - nC Diode peak reverse recovery current Irrm d i F / d t =5 5 0 A/ µs - 5.3 - A Diode ... Original
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13 pages,
848.52 Kb

PG-TO220-3-31 IKA06N60T fast recovery diode 1a trr 200ns diode 400V 6A IGBT DRIVE 500V 300A fast recovery diode 2a trr 200ns diode 400V 4A igbt k06t60 k06t60 K06T60 IKA06N60T abstract
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