NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

-F/BCP69 TRANSISTOR equivalent

Catalog Datasheet Type PDF Document Tags
Abstract: heat sink of power transistor reaches 95 This protection is activated. Then output will be shut down , twisted pair-wire terminated with a 0.1 f & 47 f parallel capacitor. 3. Tolerance : includes set up , equivalent Pin No. 1 2 3 Assignment AC/N No Pin AC/L Mating Housing JST VHR or equivalent Terminal JST SVH-21T-P1 SVH-21T-P1.1 or equivalent DC Output Connector (CN4) : JS-2008-03 JS-2008-03*2 or equivalent Pin No. 1 2 3 4 5 6 Assignment PG RSGND RC+ RS+ RCMating Housing Terminal JS-2007-03 JS-2007-03*2 or equivalent JS-2007-T JS-2007-T or ... Original
datasheet

4 pages,
335.79 Kb

MPT-200D JS200 datasheet abstract
datasheet frame
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 BFG591 NPN 7 GHz wideband transistor Product , NPN 7 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency , base emitter collector 1 Top view BFG591 BFG591 DESCRIPTION NPN silicon planar epitaxial transistor in , ; VCE = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz MIN. TYP. MAX. 20 15 200 2 250 , ; VCE = 12 V; gain f = 900 MHz; Tamb = 25 C insertion power gain IC = 70 mA; VCE = 12 V; f = 900 MHz ... Original
datasheet

15 pages,
101.71 Kb

BFG591 Application Notes BFG591,115 BFG591 BFG591 abstract
datasheet frame
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 BFG591 NPN 7 GHz wideband transistor Product , NPN 7 GHz wideband transistor BFG591 BFG591 FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. Low noise figure 4 lfpage , capacitance IC = Ic = 0; VCE = 12 V; f = 1 MHz 0.7 pF fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz 7 GHz GUM maximum unilateral power IC = 70 mA; VCE = ... Original
datasheet

14 pages,
100.79 Kb

DIN45004B BFG591 amplifier BFG591 BFG591 Application Notes BFG591 abstract
datasheet frame
Abstract: Equivalent Circuit: C4 C1 L2 B Transistor Chip B' C' L3 C E' C6 C2 L1 C5 C3 , BFR360F BFR360F NPN Silicon RF Transistor* · Low voltage/ low current operation · For low noise , 0.5 Cce - 0.2 - Ceb - 0.4 - F min - 1 - IC = 15 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 1.8 GHz - 15.5 - f = 3 GHz - 11 GHz - IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, V BE = 0 ... Original
datasheet

10 pages,
83.4 Kb

TRANSISTOR MARKING NK BFR360F RF NPN POWER TRANSISTOR C 10-12 GHZ BFR360F abstract
datasheet frame
Abstract: DIFFERENTIAL AMPLIFIER 1/f Noise Figure (For Single Transistor) (Figure 12) Gain Bandwidth Product (For Single , the amplifiers are general purpose devices which exhibit low 1/f noise and a value of f j in excess of , · VHF Amplifiers · VHF Mixers · Multifunction Converter/I F Combinations RF/Mixer/Oscillator; · , Package. 140 Maximum Power Dissipation (Any One Transistor). 300mW Maximum Junction , device. This is a stress only rating and operation o f the device at these o r any other conditions above ... OCR Scan
datasheet

9 pages,
533.08 Kb

CA3102 CA3049 CA3102 equivalent CA3049T A3049 transistor j307 J307 A3049 abstract
datasheet frame
Abstract: Application Simulator Motorola Bipolar Power Transistor Device Data 3-861 MJW16206 MJW16206 +15 O - f - , R&jc tl °c REV 2 Motorola Bipolar Power Transistor Device Data 3-855 MJW 16206 , Transistor Device Data MJW16206 MJW16206 hpg, D C CURRENT GAIN Figure 1. Typical DC Current Gain Figure , Frequency Motorola Bipolar Power Transistor Device Data 3-857 MJW16206 MJW16206 SAFE OPERATING AREA , limitations on the power handling ability of a transistor: average junction temperature and second break down. ... OCR Scan
datasheet

9 pages,
364.11 Kb

1200 volt npn MUR8100E MTP8P10 MPF930 MJW16206 ex 3863 desaturation design MJF16206 TP12N10 je210 datasheet abstract
datasheet frame
Abstract: o D * H ¿a OO* 0 5 3 ao O' / 1 \£ NO r / H i 9 i sw 0n CU -»v ft -f + n 0 ) a n 0 )o Q. , Ordering number: EN 2 6 2 0 A Monolithic Linearle F r NO.2620A Pr e a m p for C o , 0.7 THD=1$ Maximum Output Voltage 0.7 1.0 Rg=2.2kohms, Equivalent Input 1.1 1.7 NI1 Noise Voltage , Output Voltage Hg=2.2kohms, Equivalent Input 1.1 1.7 NI2 Noise Voltage B.P.F20HZ F20HZ to 20kHz Input , Resistance 70 30 ON 50 60 DC Feedback Resistance 40 *F1 Equivalent Circuit Block Diagram o Ût 5 unit mA ... OCR Scan
datasheet

13 pages,
423.55 Kb

LA3 stereo datasheet abstract
datasheet frame
Abstract: Description Power Supply (PS) DVs V ext ^ H an Standby Figure 4. Equivalent circuit o f pow er supply and , the application note ANT019 ANT019. I VS Figure 9. Equivalent circuit o f Pin Input 12601 Amplifier , equivalent circuit of the driver is shown in figure 4. Figure 13. Equivalent circuit o f Pin CFE 6(13 , microcontroller. In conjunction with an external NPN transistor it also establishes the supply voltage of the , transistor and external circuits, i.e., a microcontroller (even in Standby mode). Pin V e x t and V B a tt ... OCR Scan
datasheet

13 pages,
751.35 Kb

Transponder ID 46 crypto biphase IC car immobilizer U2270B U2270B abstract
datasheet frame
Abstract: SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36m ii at 5A * * * * 7 Amp continuous collector , f l Em itter Cut-Off Current Collector-Em itter Saturation Voltage !e b o 1 50 1 110 35 67 168 , , Vce=2V* hF E Transition Frequency fT MHz U=100mA. VrP=10V f=50MHz VCB=10V, f=1MHz*  -IA , lBl=100mA lBZ=100mA, Vc(f=10V O utput Capacitance Sw itching Times ^obo 70 60 680 | PF ns ns ... OCR Scan
datasheet

3 pages,
152.42 Kb

FZT869 FZT869 abstract
datasheet frame
Abstract: JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEO M ETR Y 446 CP643 CP643 · FOR HIGH DYNAMIC RANGE R.F. , RATINGS TO-46 S DS f 1Pfd) SYMBOL BVdso BVdgq BV g s o Id Pd Df Tj 30 30 -IB 0.3 2.0 87 UNITS , Store) -55°C to + 2 0 0 'C HIGH FREQUENCY COMMON GATE EQUIVALENT CIRCUIT TYPICAL CHARACTERISTICS IN C IR C U IT OF TM F 18 Dynamic Range 140 dB Two Tone 3 M H z/5M Hi 3rd Order Prod. Signal , Pinch-Off Voltage V d s * 6V, I d s * 1.0 mA Gain in Ckt. of TMF18 TMF18 IDS a 25 mA. f * 1 to 100 MHz. Gate to ... OCR Scan
datasheet

1 pages,
96.28 Kb

CP643 datasheet abstract
datasheet frame