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1 - 11 of about 11 for 3N50* |
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First line: 3N50* IXTA 3N50P IXTP 3N50P IXTY 3N50P RDS(on) Abstract: .. IXTA 3N50P IXTP 3N50P IXTY 3N50P. VDSS = 500 V. ID25 = 3.6 A. RDS on ≤ ≤ ≤ ≤ ≤ 2.0 Ω Ω Ω Ω Ω. Symbol Test .. IXTA 3N50P IXTP 3N50P IXTY 3N50P. Symbol Test Conditions Characteristic Values. TJ = 25° C .. Tags: 3N50* 3N50P IXTA3N50P IXTP3N50P IXTY3N50P |
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First line: (Electrically Isolated Tab) Abstract: .. IXFP 3N50PM VDSS = 500 V. ID25 = 2.7 A. RDS on ≤ ≤ ≤ ≤ ≤ 2.0 Ω Ω Ω Ω Ω trr ≤ ≤ ≤ ≤ ≤ 200 ns. Symbol Test .. IXFP 3N50PM. Symbol Test Conditions Characteristic Values. TJ = 25° C, unless otherwise .. Tags: IXFP3N50PM |
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First line: 2N2287* 2N1652 2N2081 2N2082 GERMANIUM POWER TRANSISTORS CURRENT GAIN SATURATION VOLTAGES TYPE NUMBER CASE TYPE VCBO VCEO VEBO VCER VCES l>FE MIN. MAX. VCE(s) VBE(s) 3MAN PIMP Observe Negative Polarity 2N2077 TO-36 25.0 12.0 2.000 2N2078 TO-36 20.0 12.0 2.000 2N2079 TO-36 40.0 12.0 2.000 2N2080 T Abstract: .. 40 5.0 .500 3N50 MT-70 80 50 20 80 2.0 5.0 .40 5.0 .500 3N51 MT-70 40 25 30 120 2.0 5.0 .40 5.0 .500 .. G7 2N2612 G2 3N49 G2 3N50 G2 3N51 G2 3N52 G7 2N511 G7 2N511A G7 2N511B G7 2N512 G7 2N512A G7 2N512B G7 .. Tags: 2N2082 2N2081 2N1652 2N2287* datasheet abstract.. |
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First line: 5N80 5N50* 5P50 ESC Electronics 5p10 SMD 1N60 ELECTRONICS CORP SERIES DIP-14 DIP-G14 3037257 DELAY LINES TAPS PACKAGES SURFACE MOUNTING LEADS T-fM3 -.785 MAX.- .250 MAX. Abstract: .. 10 40 1N40 2N40 3N40 5N40 450 80 10 45 1N45 2N45 3N45 5N45 500 90 10 50 1N50 2N50 3N50 5N50 600 110 10 60 .. 3N25 3N30 3N35 3N40 3N45 3N50 3N60 3NBO 3Nl00. 5N25 5N30 5N35 5N40 5N45 5N50 5N60 5NBO 5Nl00. I. .700. I .. Tags: SMD 1N60 ESC Electronics 5p10 5P50 5N50* 5N80 datasheet abstract.. |
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First line: 3N502 NB3N502 Clock Multiplier NB3N502 clock multiplier device that generates jitter, TTL/CMOS level output clock which precise multiple external input reference clock signal source. device cost efficient replacement crystal oscillators commonly used electronic systems. accepts standard fundamental Abstract: .. 3N502 = Specific Device Code A = Assembly Location L = Wafer Lot. Y = Year. W = Work Week. = Pb Free .. 3N502 ALYW. 1. 8. NB3N502DR2G SOIC 8 Pb Free 2500/Tape & Reel. †For information on tape and reel .. Tags: 3N502 NB3N502 |
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First line: 2N511B GERMANIUM POWER TRANSISTORS CURRENT GAIN SATURATION VOLTAGES Type Case VcBO Kteo VEBO Vces Ycct, Number Type Min. Max. GERMANIUM (Cont.) 2N1553A TO-3 20.0 10.0 10.0 1.000 2N1554 TO-3 30.0 10.0 10.0 1.000 2N1554A TO-3 30.0 10.0 10.0 1.000 2N1555 TO-3 40.0 10.0 10.0 1.000 Abstract: .. 40 5.0 .500 .80 3N50 MT-70 80 50 20 80 2.0 5.0 .40 5.0 .500 .80 3N51 MT-70 40 25 30 120 2.0 5.0 .40 5.0 .. 3N49 3N50 3N51 3N52. MT-70 MT-70 MT-70 MT-70. 60 SO 40 60. 35 50 25 40. 30 20 30 20. 120 SO 120 SO. 2.0 2.0 2.0 2 .. Tags: 2N511B datasheet abstract.. |
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First line: 2N511B 2N1555 GERMANIUM POWER TRANSISTORS Type Number Cast Type CURRENT GAIN SATURATION VOLTAGES VcBO VEBO Min. Max. Vcci. 6j.c GERMANIUM (Com.) 2N1553A TO-3 20.0 10.0 10.0 1.000 2N1554 TO-3 30.0 10.0 10.0 1.000 2N1554A TO-3 30.0 10.0 10.0 1.000 2N1555 TO-3 40.0 10.0 10.0 1.000 2N1555A TO-3 40.0 10. Abstract: .. 40 5 0 500 80 3N50 MT-70 80 50 20 80 2.0 5.0 .40 5.0 .500 80 3N51 MT-70 40 25 30 120 2.0 5.0 .40 5.0 500 80 .. IS AMP G ERMA NIUM Pl\P TETRom:s 3N49 3N50 3NSI 3N52 MT-70 MT-70 MT-70 MT-70 60 SO 40 60 35 50 25 40 30 .. Tags: 2N1555 2N511B datasheet abstract.. |
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First line: 7N60P INDUCTION HEATING mosfet 2n60p pdf IXFC22N60P 2n60p IXYS announced that keeping with ambitious growth plans IGBT market, European Operation, leader Direct Copper Bond (DCB) module packaging technology, located Lampertheim, Germany extended portfolio IGBT modules down power cover high volume co Abstract: .. IXT 1 3N50P 500 3.6 2.0 8 1.8 Y, P, A. IXT 1 5N50P 500 5 1.3 12 1.5 P, A. IXT 1 6N50P 500 6 1.0 15 1.3 P .. Tags: 2n60p IXFC22N60P 2n60p pdf INDUCTION HEATING mosfet 7N60P transistor ixf h TO 48 THYRISTOR FAST SWITCHING offline UPS msc gsm mosfet cross reference inverter mosfet cross reference MOSFET cross MOSFET 800V 10A TO-3P MCO 150-12 ixys cross IXTP10N60PM datasheet abstract.. |
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First line: ixys mosfet ixtq50n20p 180N15* 2n60p IXFN80N50P IXFN82N60P Abstract: .. IXT 1 3N50P 500 3.6 2.0000 409 9.3 400 1.80 70 Y, P, A. IXT 1 5N50P 500 4.8 1.4000 620 12.6 400 1.40 .. IXT 1 3N50P 500 3.6 2.0000 409 9.3 400 1.80 70 Y, P, A. IXT 1 5N50P 500 4.8 1.4000 620 12.6 400 1.40 .. Tags: IXFN82N60P IXFN80N50P 2n60p 180N15* ixys mosfet ixtq50n20p datasheet abstract.. |
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First line: 3N50 MTH13N50 MOTOROLA P.O. 20912 PHOENIX, ARIZONA 85036 Designer's Data Sheet N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS Power FETs designed medium voltage, high speed power switching applications such switching regulators, converters, solenoid relay drive Abstract: .. SAFE OPERATING AREA 100 80 40 < cc o Q 20 Tj ^ ;150° MTH1 5N35- i MTU1CMÜA MTH1 OKMC 0IW3 MTH1 3N50 100 .. Tags: MTH13N50 3N50 datasheet abstract.. |
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First line: 7N60B equivalent mmo-90 14 106 vub 70-12 MOSFET smd 4407 vub 70-16 Page General Environmental Management Systems Alphanumeric ndex Symbols Terms Nomenclature Patents ntellectual Property CLARE Optically solated Solid State Relays Optically solated AC-Power Switches Power Solid State Relays Linear Op Abstract: .. XFP 3N50PM 105. Ø XFP 4N100P 107. . XFP 4N100Q 110. Ø XFP 5N100P 107. . XFP 5N50PM 105. Ø XFP 7N100P 107 .. XTY 3N50P 102. . XTY 3N60P 102. Ø XTY 4N60P 102. . XTY 5N50P 102. Ø XTY 12N06T 98. . XTY 2N60P 102. . XTY .. Tags: vub 70-16 MOSFET smd 4407 vub 70-12 mmo-90 14 106 7N60B equivalent zy zener smb zy 406 Y2002KC250 xtr 896 xenon linear flash lamps xenon hid ballast Xenon x112 X017* WLAN Modul WG40045SN datasheet abstract.. |
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