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1 - 18 of about 18 for 2n918 die |
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First line: 2N918 2N918 chip 2n918 data sheet 2N918 DATASHEET 2n918 die Data Sheet 2C918 Chip Type 2C918 Geometry 0013 Polarity Generic Packaged Parts: 2N918 Chip type 2C918 Semicoa Semiconductors provides performance similar these devices. Abstract: .. 2N918, 2N918UB, SD918, SD918F, SQ918, SQ918F. APPLICATIONS: Designed for high fre-quency .. Die Thickness Chip Area Top Surface. 16 mils x 16 mils Silox Passivated. Mechanical .. Tags: 2N918 chip SK4911* 2N918UB 2n918 die 2N918 DATASHEET 2n918 data sheet 2n918 2N918 |
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First line: pn3563* 2N918 DATASHEET 2N918 chip PN3563 PN3563 equivalent Small Signal Transistor Transistor Chip CP317 Abstract: .. 2N918. 2N2857. 2N5179. 2N5770. BFY90. PN3563. PN3564. GROSS DIE PER 4 INCH WAFER 53,788. PROCESS CP317 .. Die Size 14.5 x 14.5 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 2.4 x 2.2 MILS. Emitter .. Tags: PN3563 equivalent PN3563 2N918 chip 2N918 DATASHEET pn3563* CP317 |
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First line: 2n918 transistor 2N918 DATASHEET 2n918 die 2N918 chip PN3563 equivalent Small Signal Transistor Transistor Chip CP317 Abstract: .. PRINCIPAL DEVICE TYPES CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564. Process .. Die Thickness 9.0 MILS. Base Bonding Pad Area 2.4 x 2.2 MILS. Emitter Bonding Pad Area 2.4 x 2.2 MILS .. Tags: PN3563 equivalent 2N918 chip 2n918 die 2n918 transistor CP317 BFY90 2N918 2N5770 2N5179 2N2857 CP317 |
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First line: 2n918 die 2N918 Description Semicoa Semiconductors offers: Screening processing MIL-PRF-19500 Appendix level (2N918J) JANTX level (2N918JX) JANTXV level (2N918JV) JANS level (2N918JS) applicable level 100% visual inspection MIL-STD-750 method 2072 JANTXV JANS Radiation testing (total dose) upon requ Abstract: .. • 100% die visual inspection per MIL-STD-750 method. 2072 for JANTXV and JANS. • Radiation .. 2N918. Silicon NPN Transistor. D a t a S h e e t. Copyright© 2004 Semicoa. Rev. F.2 333 McCormick Avenue .. Tags: 2n918 die NPN 200 VOLTS POWER TRANSISTOR 2N918 JAN 2N918 2N918J 2N918JX 2N918JV 2N918JS |
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First line: 2n2857 data sheet 2n918 data sheet 2N918 DATASHEET "RF Power Transistors 2N3478 2n3478 Small Signal Transistors TO-72 Case TYPE VCBO VCEO VEBO ICBO (µA) 0.001 -0.01 0.01 0.01 0.01 0.02 0.01 0.02 0.01 Abstract: .. C=360mW Total Both Die Equal Power TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE @ IC @ VCE .. 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 15 20 - - 3.0 1.0 0.4 10 600 1.7. 2N998 DARLINGTON 100 60 15 0.01 .. Tags: 2n3478 "RF Power Transistors 2N3478 2N918 DATASHEET 2n918 data sheet 2n2857 data sheet 2N998* 2N5179 2N2857 datasheet abstract.. |
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First line: 2n918 data sheet 2N918 DATASHEET Micro International, LDT918 LDT918T Abstract: .. The LDT918 and LDT918T meet the general specifications of the 2N918 transistor. The 4-075-1 .. Semiconductor die and Micro-LID package visual inspection. Wire pull test. 24 hour .. Tags: 2N918 DATASHEET 2n918 data sheet LDT918T LDT918 LDT918T |
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First line: Small Signal Transistors TO-72 Case TYPE VCBO VCEO VEBO ICBO (µA) 0.001 -0.01 0.01 0.01 0.01 0.02 0.01 0.02 0.01 Abstract: .. C=360mW Total Both Die Equal Power TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE @ IC @ VCE .. 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 15 20 - - 3.0 1.0 0.4 10 600 1.7. 2N998 DARLINGTON 100 60 15 0.01 .. Tags: PNP UHF transistor 2N998 2N2857 datasheet abstract.. |
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First line: Small Signal Transistors TO-72 Case type description vcbo vceq Vebo icbo VCB0 vce(sat] (HA) (ma) (mA) (mhz) *cct> (pf) 2n917 RF/IF OSCILLATOR 0.001 2n917a RF/IF OSCILLATOR 2n918 RF/IF OSCILLATOR 0.01 Abstract: .. 15 3.0 — — 20 200 3.0 10 — — 600 1.7 2n918 RF/IF OSCILLATOR 30 15 3.0 0.01 15 20 — 3.0 1.0 0.4 .. pp @ TA= 25 °C=360mW Total Both Die Equal Power TYPE NO. DESCRIPTION VCBO V MIN vCEO V MIN .. Tags: datasheet abstract.. |
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First line: amplification* 2N918 Semiconductors Hybrid Micro-Electronics IFerranti have wide range silicon semiconductors, wholly U.K. made, available slice dice form, encapsulated microminiature packages multiple assemblies, with thick thin film circuits. Silicon Planar Devices Slice Dice Form Transistor diode Abstract: .. 3 45 3 2N918 /fj—600MHz min. \ Noise figure = 3dB at 60MHz High-Speed Switches STS2369 n-p-n 30 .. · rI · ZT 90 Die Comments. SILICON TRANSISTOR SLICE. Ele'ctrical Characteristics .. Tags: amplification* 2N918 datasheet abstract.. |
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First line: transistor k83 MPQ918 (SILICON) QUAD DUAL IN-LINE SILICON ANNULAR HIGH FREQUENCY AMPLIFIER TRANSISTORS designed high-gain amplifier applications. Noise Figure mAdc (Typ) High Product (Typ) mAdc Transistors Similar 2N918 TO-llEi Package Compact Size Compatible with Automatic Insertion Equipment QUAD Abstract: .. -Gain—Bandwidth Product — ft = 850 MHz Typ @ lc = 4.0 mAdc Transistors Similar to 2N918 TO .. Die 151 250 °C/W Effective, 4 Die 52 134 °c/w Coupling Factors Û1-Q4 or Q2-Q3 34 70 % Q1-Q2 or 03 .. Tags: transistor k83 datasheet abstract.. |
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First line: INCH-POUND MIL-PRF-19500/301F February, 2002 SUPERSEDING MIL-PRF-19500/301E October 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON, LOW-POWER TYPE 2N918 2N918UB JAN, JANTX, JANTXV JANS, JANHC JANKC This specification approved Departments Agencies Department Defense. SCOPE S Abstract: .. SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER TYPE 2N918 AND 2N918UB JAN, JANTX .. Die thickness--- .008 ± .0016 inches, 0.203 mm X 0.406mm . Base pad-------- .0027 x .0027 .. Tags: vqe 24 e vqe 24 d VQE 24 MIL-PRF-19500 LA 4303 2N918 JAN 2n918 data sheet 2N918 2N918UB |
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First line: documentation process conversion measures necessary comply with this document shall completed August 2010. INCH-POUND MIL-PRF-19500/301K 2010 SUPERSEDING MIL-PRF-19500/301J October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON, LOW-POWER, TYPE 2N918 2N918UB, JAN, JAN Abstract: .. , LOW-POWER, TYPE 2N918 AND 2N918UB, JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC, AND JANHCB .. JANHCB B-version die dimensions .. Tags: 2N918 2N918UB |
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First line: DAC10 IN5711 IFR 740 10-Bit High Speed Multiplying Converter (Universl Digitl Logic Interfce) DAC10* DAC10 series models gurntee full 10-bit monotonicity, nonlinerities tight +0.05% over entire operting temperture rnge vilble. Device performnce essentilly unchnged over power supply rnge, with power Abstract: .. to TTL, CMOS, ECL, PMOS, NMOS Availability in Die Form ̊. GENERAL DESCRIPTION The DAC10 series of .. 2N918. LOW-TO-HIGH SETTLING VL = 16.500V 60.001V HIGH-TO-LOW SETTLING VL = 0.500V 60.001V. 1/2 .. Tags: IFR 740 DAC10 interfacing differential logic families 1998 IN5711 2N918 "logic threshold control" 1998 DAC10 |
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First line: 2n3019 transistor transistor pnp 5015 transistor 2n3053 SIS 672 2N2464 GENERAL TRANSISTOR CORP 3T5fl001 0000074 General Transistor Corporation WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 Telex 65-3474 (213) 672-2905 General Purpose Abstract: .. power, high current modified TO-3 package 60 mil die-meter pins . Collector is connected to .. 2N718A 2N720A 2N915 2N918 2N958 2N2221 2N222IA 2N2222 2N2222A 2N37OO 2NI613 2N1711 2N1893 .. Tags: 2N2464 SIS 672 transistor 2n3053 transistor pnp 5015 2n3019 transistor datasheet abstract.. |
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First line: RF 3826 MPS9426 cs 9018 transistor 2SC929 transistor 2SC930 SEMICONDUCTORS OODDE?^ RF-IF High Frequency Transistors TYPE CASE MAXIMUM RATINGS VCE(SAT) N.F. (mW) <mA) VCEO <mA) IitiAI (MHz) (pF) (dB) TO-72J 230+ 0.8- 3.5+ TO-106 TO-106 TO-72G TO-106 700+ 1.2- Abstract: .. SEMICONDUCTORS INC DIE D | ñl3bbSG OODDE?^ 4 | T- ? I - L f RF-IF High Frequency Transistors TYPE È Œ .. 300 6 - 2N917 N TO-72G 200 50 15 20 200 3 1 0.5 3 500 1.7 6 2N918 N TO-72G 200 50 15 20 — 3 1 0.4 10 600 1.7 6 2N .. Tags: transistor 2SC930 2SC929 cs 9018 transistor MPS9426 RF 3826 datasheet abstract.. |
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First line: 2n3810 lcc MCA3201/2B ESCC 5201-002 ESCC 5202-001 2N2907A LCC3 Space Products Semelab products processes space applications SEMELAB experience innovation Abstract: .. These integrate several semiconductor die or other components into one package to provide a .. 2N918 TO72 ESCC 5201 009 01B. BDS16 TO257 T-120-01B &1C BDS18 TO257 T-121-01B &1C BDS20 .. Tags: 2N2907A LCC3 ESCC 5202-001 ESCC 5201-002 MCA3201/2B 2n3810 lcc voter TO72 TO53 package SMD05 Skynet Electronic silicon carbide JFET SCC 5207-005 plc analog em 232 pins 2N2920 Para Light Electronics mp2835 datasheet abstract.. |
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First line: KBPC8010* A1941 KBPC8010 DIAC DB2 tip122 smd package Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Abstract: .. gold Au for eutectic die attach and wire bondable type assembly. • P ower Transistors .. 2N918 NPN 15 0.2 0.05 0.01 15 20 1 3 0.4 10 600 4 TO-72. 2N3478 NPN 15 0.2 0.05 0.02 15 25 150 8 2 TO-72 .. Tags: tip122 smd package DIAC DB2 KBPC8010 A1941 KBPC8010* datasheet abstract.. |
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First line: NEC 12F triac jrc 2904 d CK 66 UL 94V-0 LCD ecg semiconductors master replacement guide bta16 6008 Catalog Abstract: .. 511-2N720A 610-MPS8097 592-MMST8098 511-2N914 333-2N917 511-2N918 610-CMPT918 610-PN918 .. • Black chrome finish • 3 attenuation levels • Die cast housing • Flexible colour coding system .. Tags: bta16 6008 ecg semiconductors master replacement guide CK 66 UL 94V-0 LCD jrc 2904 d NEC 12F triac zytel fr 10 zm4751a ITT zm4751a ZIF 48-pin dil zener smd marking GI zener smd diode 3.3v 500mw ZENER R3M zener ITT Industries zener fr303 Zener Diode SOT-23 BI-DIR Zener diode smd marking ck datasheet abstract.. |
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