2n3996 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results |
1 - 36 of about 36 for 2n3996 |
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2N3996 |
API Electronics, Inc. |
Short form transistor data |
211.43 Kb, 2 Pages. |
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2N3996 |
Diode Transistor Co., Inc. |
NPN TO-111 / TO-59 Transistors |
62.58 Kb, 1 Pages. |
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2N3996 |
Diode Transistor Co., Inc. |
Transistor Short Form Data |
62.59 Kb, 1 Pages. |
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2N3996 |
General Diode |
Transistor Selection Guide |
594.42 Kb, 10 Pages. |
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2N3996 |
General Transistor Corp. |
NPN Power Transistors |
93.26 Kb, 1 Pages. |
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2N3996 |
Microsemi Corporation |
NPN POWER SWITCHING SILICON TRANSISTOR |
55.53 Kb, 2 Pages. |
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2N3996 |
New England Semiconductor |
NPN TO-61 / TO-111 Transistor |
69.17 Kb, 1 Pages. |
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2N3996 |
New England Semiconductor |
NPN Transistors, TO-61 / TO-111 |
68.69 Kb, 1 Pages. |
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2N3996 |
New England Semiconductor |
BIPOLAR ISOLATED COLLECTOR NPN TO-61 / TO-111 |
34.24 Kb, 1 Pages. |
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2N3996 |
Pirgo Electronics, Inc. |
Silicon Planar Power Transistors |
152.61 Kb, 1 Pages. |
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2N3996 |
Pirgo Electronics, Inc. |
5 Amp NPN Silicon Transistors |
56.82 Kb, 1 Pages. |
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2N3996 |
PPC Products Corporation |
Transistor Short Form Data |
353.74 Kb, 1 Pages. |
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2N3996 |
Semicoa Semiconductor |
NPN Silicon Power Transistor Selection Guide |
80.67 Kb, 1 Pages. |
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2N3996 |
Silicon Transistor Corp. |
Low Frequency Silicon Power Transistor |
67.78 Kb, 1 Pages. |
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2N3996 |
Solid State Devices, Inc. |
Silicon NPN Transistors |
61.68 Kb, 1 Pages. |
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2N3996 |
Solid State Micro Technology |
100 V, 5 A high speed NPN transistor - Pol=NPN / Pkg=TO111 / Vceo=80 / Ic=5 / Hfe=40-120 / fT(Hz)=40M / Pwr(W)=30 |
282.94 Kb, 6 Pages. |
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2N3996 |
Solidev Semiconductors |
Solid State Products (Transistor Guide) |
107.14 Kb, 2 Pages. |
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2N3996 |
Solitron Devices, Inc. |
Planar Power Transistor |
662.84 Kb, 11 Pages. |
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2N3996 |
Texas Instruments |
Discrete Devices 1978 |
62.06 Kb, 1 Pages. |
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2N3996 |
Texas Instruments |
Semiconductor and Components Data Book 1967/8 |
42.77 Kb, 1 Pages. |
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2N3996 |
Texas Instruments |
Supply Division Product Catalogue 1978/79 |
30.26 Kb, 1 Pages. |
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2N3996J |
Semicoa Semiconductor |
Package = Level = Jantxv Vceo (V) = 80 Vcbo (V) = 100 Vebo (V) = 8.0 Ic (A) = 5.00 Power (W) ta = 2 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 120 VCE(sat) (V) = 0.25 |
165.5 Kb, 2 Pages. |
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2N3996JAN |
API Electronics, Inc. |
Short form transistor data |
211.43 Kb, 2 Pages. |
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2N3996JAN |
New England Semiconductor |
NPN POWER SWITCHING SILICON TRANSISTOR |
29.59 Kb, 2 Pages. |
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2N3996JAN |
Unitrode Semiconductor |
International Semiconductor Data Book 1981 |
132.07 Kb, 4 Pages. |
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2N3996JANTX |
Microsemi Corporation |
NPN POWER SWITCHING SILICON TRANSISTOR |
53.99 Kb, 2 Pages. |
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2N3996JANTX |
Unitrode Semiconductor |
International Semiconductor Data Book 1981 |
132.08 Kb, 4 Pages. |
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2N3996JANTXV |
Unitrode Semiconductor |
International Semiconductor Data Book 1981 |
132.07 Kb, 4 Pages. |
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2N3996JTX |
API Electronics, Inc. |
Short form transistor data |
211.43 Kb, 2 Pages. |
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2N3996JTX |
New England Semiconductor |
NPN POWER SWITCHING SILICON TRANSISTOR |
29.59 Kb, 2 Pages. |
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2N3996JTXV |
API Electronics, Inc. |
Short form transistor data |
211.43 Kb, 2 Pages. |
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2N3996JTXV |
New England Semiconductor |
NPN POWER SWITCHING SILICON TRANSISTOR |
29.59 Kb, 2 Pages. |
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2N3996JV |
Semicoa Semiconductor |
Package = Level = Jantxv Vceo (V) = 80 Vcbo (V) = 100 Vebo (V) = 8.0 Ic (A) = 5.00 Power (W) ta = 2 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 120 VCE(sat) (V) = 0.25 |
165.5 Kb, 2 Pages. |
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2N3996JX |
Semicoa Semiconductor |
Package = Level = Jantxv Vceo (V) = 80 Vcbo (V) = 100 Vebo (V) = 8.0 Ic (A) = 5.00 Power (W) ta = 2 Rtja (C/W) = Tstg/top (C) = -65 to +200 Hfe = 120 VCE(sat) (V) = 0.25 |
165.5 Kb, 2 Pages. |
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2N3996SMD |
Semelab |
Bipolar NPN Device in a Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications |
9.85 Kb, 1 Pages. |
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2N3996SMD05 |
Semelab |
Bipolar NPN Device in a Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications |
10.61 Kb, 1 Pages. |
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| Fulltext Datasheet Results |
1 - 36 of about 36 for 2n3996 |
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First line: 2N3999* 2n3996 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV Processed MIL-PRF-19500/374 MIL-PRF DEVICES Abstract: .. 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV. Processed per MIL-PRF-19500/374. NPN POWER SWITCHING SILICON TRANSISTOR. TO-111. MIL-PRF. QPL. DEVICES. 6 Lake .. Tags: 2n3996 2N3999* JAN 2N3997 2N3997 JAN to-111 2N3996 2N3997 2N3998 2N3999 |
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First line: POWER SWITCHING SILICON TRANSISTOR Qualified MIL-PRF-19500/374 Devices 2N3996 2N3997 2N3998 2N3999 Qualified Level JANTX JANTXV Abstract: .. 2N3996 2N3997 2N3998 2N3999. JAN JANTX JANTXV. MAXIMUM RATINGS. Ratings Symbol Value Unit. Collector-Emitter Voltage VCEO 80 Vdc. Collector-Base Voltage VCBO 100 Vdc. Emitter-Base Voltage VEBO .. Tags: JANTXV 2N3997 JAN 2N3997 2N3996 2N3997 2N3998 2N3999 |
53.99 Kb |
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First line: 2n3996 Amp, 80V, Planar JAN, JANTX, JANTXV 2N3996 JAN, JANTX, JANTXV 2N3997 JAN, JANTX, JANTXV 2N3998 JAN, JANTX, JANTXV 2N3999 Meets MIL-S-19500/374* Collector-Base Voltage: 1QQV D.C. Collector Current: Fast Switching Beta Guaranteed Current Levels Abstract: .. POWER TRANSISTORS 5 Amp, 80V, Planar NPN JAN, JANTX, & JANTXV 2N3996 JAN, JANTX, & JANTXV 2N3997 JAN, JANTX, & JANTXV 2N3998 JAN, JANTX, & JANTXV 2N3999 FEATURES • Meets MIL-S-19500/374* • Collector .. Tags: 2n3996 datasheet abstract.. |
150.6 Kb |
4 Pages |
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First line: 2N3850 TO-111 ELECTRONICS, INC. /-11 COLLECTOR CURRENT AMPS VCBO VcEO (bus) Vebo Volts Device Case Volts Volts Mill (sat) (sat) 2N3751 TO-111/1 3.33 2N3752 111/1 2N3850 TO-111 3.33 2N3851 3.33 Abstract: .. 5 1.25 1 .1 2N3996 TO- lllA 100 80 8 40 120 2 1 .25 1.6 1 .1 3.33 60 JAN TO- 100 80 8 40 120 2 1 .25 1.6 1 3.33 60 2N3996 111/1 JTX TO- 100 80 8 40 120 2 1 .25 1.6 1 # 1 3.33 60 2N3996 111/1 JTXV TO- 100 80 8 40 120 2 1 .25 .. Tags: TO-111 2N3850 datasheet abstract.. |
230.23 Kb |
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First line: 2N3638A 2N2706 2N3731 2N4148 2N4148* DIGITRON ELECTRONIC CORP OODGDDS Page DIQITRON ELECTRONIC" Hillside Avenue Springfield, Jersey 07081 201-379-9016 201-379-9019 201-467-8065 JOHN SCHWARTZ ENGINEERING Abstract: .. 2N4250A 2N5001 2N2945 2N3585 2N3980 2N4125 2N4251 2N5002 2N2945A 2N3638 2N3996 2N4126 2N4260 2N5003 2N2946 2N3638A 2N3997 2N4127 2N4261 2N5004 2N2946A 2N3714 2N4001 2N4128 2N4298 2N5005. n .. Tags: 2N4148* 2N4148 2N3731 2N2706 2N3638A datasheet abstract.. |
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First line: 2N3996 Description Semicoa Semiconductors offers: Screening processing MIL-PRF-19500 Appendix level (2N3996J) JANTX level (2N3996JX) JANTXV level (2N3996JV) applicable level 100% visual inspection MIL-STD-750 method 2072 JANTXV Radiation testing (total dose) upon request Abstract: .. 2N3996 Silicon NPN Transistor. D a t a S h e e t. Description. Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E. • JAN level 2N3996J • JANTX level 2N3996JX .. Tags: 2N3996 2N3996J 2N3996JX 2N3996JV |
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First line: ELECTRONICS [1043515 0D0D223 00^3592 ELECTRONICS 00223 -7~33-&l COLLECTOR CURRENT AMPS TYPES CONTINUED Device Case VCBO Volts VCEO (sus) Volts Vebo Volts (sat) (sat) mclx 2N3751 3.33 111/1 Abstract: .. 5 1.25 1 .1 3.33 60 111 2N3996 TO- 100 80 8 40 120 2 1 .25 1.6 1 .1 3.33 60 111/1 JAN TO- 100 80 8 40 120 2 1 .25 1.6 1 .1 3.33 60 2N3996 111/1 JTX TO- 100 80 8 40 120 2 1 .25 1.6 1 .1 3.33 60 2N3996 111 /i JTXV TO- 100 80 .. Tags: datasheet abstract.. |
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First line: Lake Street, Lawrence, 01841 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Clare, Ireland Tel: +353 6840044 Fax: +353 6822298 POWER SWITCHING SILICON TRANSISTOR Qualified MIL-PRF-19500/374 DEVICES LEVELS Abstract: .. 2N3996 2N3997 2N3998 2N3999 JAN. JANTX. JANTXV. ABSOLUTE MAXIMUM RATINGS TC = +25°C unless otherwise noted Parameters / Test Conditions Symbol Value Unit. Collector-Emitter Voltage VCEO 80 Vdc .. Tags: datasheet abstract.. |
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First line: SL 100 NPN Transistor pdf MIL-STD 833 test method vib cc 3053 diode cc 3053 diode cc 3053 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC JANKC This specification approved Departments Agencies Depar Abstract: .. SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC. This specification is approved for use by all Departments and .. Tags: diode cc 3053 cc 3053 cc 3053 diode MIL-STD 833 test methodãvib SL 100 NPN Transistor pdf Stancor MIL-PRF-19500 2N3996 2N3999 2N3997 2N3998 |
131.08 Kb |
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First line: .M.II, T.I.I Hl.rwpn 0D435TB ODDQGIO ELECTRONIC 93A0010 T-35-01 ELECTRONICS Sif. -yi.,7-i SSSM Linear from amps High frequency (typical) saturation voltage maximum collector current High voltage, BVceo(.u<) volts Abstract: .. 300 1 20 5 2 5 150 30 PG2297 2N3752 TO—111 100 70 8 100 300 1 20 5 2 5 150 30 PG2298 2N3996 TO—111 100 80 8 40 120 1 15 5 2 5 150 30 PG2299 2N3997 TO—111 100 80 8 80 240 1 20 5 2 5 150 30 PG2300 PG1275 TO—111 .. Tags: datasheet abstract.. |
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First line: 2N5327 TX 315 - wxc-810 Device Type 2N2880 JAN, 2N3418 JAN, 2N3419 JAN, 2N3420 JAN, 2N3421 JAN, 2N3439 JAN, 2N3440 JAN, 2N3740 JAN, 2N3741 JAN, 2N3749 JAN, 2N3846 JAN, 2N3847 JAN, 2N3902 JAN, 2N3996 JAN, 2N3997 JAN, 2N3998 JAN, 2N3999 JAN, 2N4150 JAN, 2N4865 JAN, 2N5157 JAN, 2N5327 JAN, 2N5328 Mil-S Abstract: .. 2N3996 JAN, TX, TXV 374 100 80 5.0 30 * TO-111/I 184. 2N3997 JAN, TX, TXV 374 100 80 5.0 30 * TO-111/I 184. 2N3998 JAN, TX, TXV 374 100 80 5.0 30 * TO-111 184. 2N3999 JAN, TX, TXV 374 100 80 5.0 30 * TO-111 184. 2N4150 .. Tags: TX 315 - wxc-810 2N5327 2N2880 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3740 2N3741 2N3749 2N3846 2N3847 2N3902 2N3996 2N3997 2N3998 2N3999 2N4150 2N4865 2N5157 2N5327 2N5328 |
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First line: STATE DEVICES |fi3bbDll 2N5338 2N5339 HIGH SPEED TRANSISTOR 14830 Valley View Avenue Mirada. California 90638 VOLTS (213)921-9660 910-583-4807 213-921-2396 CASE STYLE JEDEC Abstract: .. 2N3996 AND 2N3997 sminili 5 AMP HIGH SPEED NPN TRANSISTOR 14830 Valley View Avenue La Mirada. California 90638 100 VOLTS 213 921-9660 TWX 910-583-4807 FAX213-92T-2396 CASE STYLE Z JEDEC TO .. Tags: datasheet abstract.. |
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First line: 2n3996 *cc 3053* cc 3053 K 3053 TRANSISTOR diode cc 3053 documentation process conversion measures necessary comply with this revision shall completed July 2009. `INCH-POUND MIL-PRF-19500/374E April 2009 SUPERSEDING MIL-PRF-19500/374D June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, T Abstract: .. SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC. This specification is approved for use by all Departments. and .. Tags: diode cc 3053 K 3053 TRANSISTOR cc 3053 *cc 3053* 2n3996 2N3996 2N3999 2N3997 2N3998 |
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First line: 2N5074 ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR TO-61 PACKAGE DEVICE TYPE Vceo (sus) VOLTS (max) AMPS hFE@ (min/max A/V) @Ic/IB A/A) WATTS (MHz) 2N5006 30-90@5/5 1.5@10/1 TO-61 2N5008 70-200@5/5 1.5@10/1 2N5288 30-90@5/5 1.5@10/1 2N5317 30-90@5/5 .6@5/.5 2N5319 30-90@5/.5 .6@5/.5 Abstract: .. ISOLATED COLLECTOR NPN TO-HI NPN TO-lll 2N3996" 2N3997" 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5347 2N5348 2N5349 80 80 80 80 200 200 2S0 250 80 100 100 5 5 5 S 3 3 3 3 7 7 7. 40-120@1/2. 2@S/.5 2@5/.5 .. Tags: 2N5074 datasheet abstract.. |
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First line: 2N4070* n4111* PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREAKDOWN VOLTAGES SAT. VOLTAGES (Max.) DEVICE CASE Min. Max. 2N3851 TO-59 2N3852 TO-59 2N3853 TO-59 2N3878 TO-66 2N3879 TO-66 2N3902 TO-3 Abstract: .. 1.2 2 2N3928 TO-5 80 40 4 5 1 40 150 1 0.1 0.5 1 2N3929 TO-111 80 40 4 5 1 40 150 1 0.1 0.5 1 2N3996 TO-111/1 100 80 8 2 1 40 120 1 0.1 0.25 2 2N3997 TO-1 1 1/1 100 80 8 2 1 80 240 1 0.1 0.25 2 2N3998 TO-1 1 1 100 80 8 2 1 40 120 .. Tags: n4111* 2N4070* datasheet abstract.. |
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First line: TLP556* TLP556 s[jjjp Texas Instruments Metal Power/High Reliability Professional Types (continued) Davice Type Polarity Outline Continuous VCEO hFE@ VCE(sat) Max. -100'C Min. Max. TIP502 2N3720 TO-39 TO-5 0.75 0.75 2N3418 2N3420 2N3419 2N3421 TIP529 TIP530 TO-5 TO-5 TO-5 TO-5 TO-61 0.25 0.25 0.25 0 Abstract: .. TIP511 TIP510 TIP512 2N4913 2N4914 TIP620 TIP625 2 N2880 2N5385 2N3996 2N3997 2N3998 2N4915 TIP621 TIP626 2N5384 2N5002 2 N5004 2N5003 2N5005 2N5151 2N5153 TIP622 TIP627 NPN NPN NPN NPN NPN NPN .. Tags: TLP556 TLP556* datasheet abstract.. |
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First line: TIP24(-1...-10) iso 1502 TIP27 Silicon Power Transistors Consumer Power Type TIP14 TIP24 TIP27 Case TABPAC TABPAC TABPAC Construction (see note Maximum Ratings Tease Charac teristics Tcase VCE(SAT) Min. Max. VCBO VCEO VEBO (DC) Ptot Min. Max. 0-15 Max. Industrial Power BLY47A BLY48A BLY49A BLY50A BL Abstract: .. 0-2 0-8 10 20 Power 2S026 MS3 3DM 200 100 10 7-5 100 20 20 — 2 0 0-2 0-8 10 20 r 7/16 2N3996 J STUD EP 100 80 8 5 302 1-0 40 120 5 0-5 20 40 1-5 2N3997 I ISO- EP 100 80 8 5 302 10 80 240 5 0-5 20 40 20 I LATED 2N3998 f 7/16 .. Tags: TIP27 iso 1502 TIP24(-1...-10) datasheet abstract.. |
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First line: TIP561* TIP558 TIP581* TIP619* Metal Power High Reliability Professioni Types (continued) Device Polarity Outline Continuous VCE<aat) Type VCEO Max. TC-25-C TC-100*C Min. Max. TIP554 TO-3 TIP555 TO-3 TIP656 TO-3 2N5938 TO-SO 0.75 Abstract: .. €” 2N2880 NPN TO-111 5 70 40 12G 1 2 0.25 1 — 30 2N5385 PNP to-111 5 80 20 80 2 4 0.6 2 — 30 2N3996 NPN TO-111 6 80 40 120 1 2 0.25 1 — 30 2N3997 NPN TO-111 5 80 80 240 1 2 0.25 1 — 30 2N3998 NPN TO-111 5 80 40 120 .. Tags: TIP619* TIP581* TIP558 TIP561* datasheet abstract.. |
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First line: TO-111/TO-59 DIODL IKANSISTOR 00127 Bfl4fl3S5 DDGDia? CDjniC. (201) 6864)400 Telex: 139-385 Outside area call TOLL FREE 800-526-4581 201-676-5863 IC(MAX)3.0to10A Vceo(sus) 100V Fr=1.0to Abstract: .. 1 2N3996 80 5.0 40-10001/2 205/.5 ,6-1.2'В©1/.1 .005'В® 90 30 1.5020 40 2N3997 80 5.0 80-240В® 1/2 2В®5/.5 .6-1.2'@1/.1 .005'В® 90 30 1.5020 40 .3 В®1/.1 2 В®1/.1 I* •.V,В» вTM¦ •*в– -В». .. Tags: datasheet abstract.. |
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First line: TO-111/TO-59 DIODL IKANSISTOR 00127 Bfl4fl3S5 DDGDia? CDjniC. (201) 6864)400 Telex: 139-385 Outside area call TOLL FREE 800-526-4581 201-676-5863 IC(MAX)3.0to10A Vceo(sus) 100V Abstract: .. 1 2n3996 80 5.0 40-10001/2 205/.5 .6-1.2'В®1/.1 .005'В® 90 30 1.5@20 40 2n3997 80 5.0 80-240В® 1/2 2В®5/.5 .6-1.2'В®1/.1 .005'В® 90 30 1.5020 40 .3 В®1/.1 2 В®1/.1 I* •.V,В» вTM¦ •*в– -В». .. Tags: datasheet abstract.. |
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First line: 8254022 SILICON TRANSISTOR CORP SILICON TRANSISTOR CORP 00793 I>F|fl2S40a2 OOOO?1^ T3S-1 lcMax VCEO(SUS) Type Polarity Amps Volts Package 2N3740 TO-66 2N3741 TO-66 2N3744 TO-111 Abstract: .. .0 40 TO-3 2N3918 NPN 2.0 40 TO-3 2N3919 NPN 10.0 60 TO-3 2N3920 NPN 10.0 60 TO-3 2N3996 NPN 5.0 80 TO-111 2N3997 NPN 5.0 80 TO-111 2N3998 NPN 5.0 80 TO-59 2N3999 NPN 5.0 80 TO-59 2N4000 NPN 1.0 80 TO-5 2N4001 .. Tags: 2N4070* transistor 2N4113 datasheet abstract.. |
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First line: SF1020 sf1020* TRANSISTORS VCEO (sus) Device PD@TC Case Amps Vlts Type Amps Watts JEDEC 2N4300 TO-5 2N4998 TO-111 2N5000 TO-111 Abstract: .. 2N4300 2N4998 , 2N5000 SFT4300 2N3867 2N5334 ,2N5335 SFT3507 2N5152 2N5154 2N3996 2N3997 SFT3997 2N5336 2N5337 2N5002 2N5004 2N5338 2N5339 SFD5390 t SFT502 SFT504 2N5006 2N5008 2N5659 SFT6200 .. Tags: sf1020* SF1020 datasheet abstract.. |
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First line: 8134693 SEMICOA SILICON POWER TRANSISTORS (Cont'd) Maximum Ratings Electrical Characteristics Device Type Dissipation (Case) Watts (Cont.) Amps Volts Volts Volts VcE(Sat)@ Iq/Ib Case Min/Max Amps Volts Volts 2N2880 2N2852 2N2851 2N2850 -2N2658 40/120 20/60 40/120 40/120 40/120 0.25 5/0.5 1/0.1 1/0.1 Abstract: .. .25 2.5/0.25 3 40 30 60 70 TO-61 TO-39 TO-39 TO-39 TO-39 2N5487 - 2N3746 2N3749 2N3752 2N3996 15 30 30 30 30 5 5 5 5 5 120 100 100 100 100 80 80 80 80 80 8 8 8 8 8 25/ 20/60 20/60 100/300 40/120 5 1 1 1 1 5 5 5 5 2 1.8 0 .. Tags: 2n5487 datasheet abstract.. |
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First line: SILICON POWER current gain saturation voltages type case vcbo vceo vebo vce,s) vbe,s) number type min. max. SILICON 2N2657 TO-5 1.50 .100 2N2658 TO-5 1.50 .100 2N2850-1 TO-5 1.20 .050 Abstract: .. 30 1.50 20 1.0 60.0 84 2N3996 3.33 .30 2.00 20 1.0 60.0 84 2N3997 3.33 .30 1.50 20 1.0 60.0 84 2 N 3998 3.33 .30 1.50 20 1.0 60.0 84 2N3999 25.00 .20 2.00 .20 20 5.0 60.0 85 2N4150 5.00 60.0 84 2N4231 5.00 60 .. Tags: datasheet abstract.. |
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First line: .AL 431 1n3890 datasheet transistor 2N2906* 2N657(A,S) transistor 2N3251* QML-9500-19 2/2004 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 2N2432 2N2481 2N3902 2N3996 2N6193 2N9193U3 M19500/483-02 Abstract: .. 2N3996 - 2N6193. 2N9193U3 - M19500/483-02. 2. 3. 4. 5. 6. 7. 8. 9. MANUFACTURING LOCATION RELIABILITY LEVEL. PART NUMBER DETAIL A1 B1 CD CO I IP L J X V S H K. 1N1124A, 1N1126A, 1N1128A & RA 260 X X. 1N1184, 1N1186, 1N1188 .. Tags: transistor 2N3251* 2N657(A,S) transistor 2N2906* 1n3890 datasheet .AL 431 PPS 10-3900 System Power-One PLS36r MICROSEMI 2N2920 MICROSEMI 2N2222A microsemi 1n6642 1n4938 M19500/483 J 2N918 J 2N706 J 2N5581 2N6990 2N6989 2N2432 2N2481 2N3902 2N3996 2N6193 2N9193U3 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 |
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First line: ENGLAND SEMICONDUCTOR lc(MAX) 10-20A Vceocsus) 80-100V 10-50 DDOOOSa QflT NPIM TO-61 ISOLATED COLLECTOR Case VCEO (SAT) (SAT) Is/b (SUSI (MAX) IC/VCE IC/lB IC/IB ICEV icJIb tOFF IC/lB Abstract: .. 70 5 100-300 ® 1/5 2 ®5/.5 1 2 ®1M 01@100 30 3@10 50 .3l01/.1 1-5*01/ 1 2N3996 80 5 40-120 ®1/2 2 ®5/.5 6-1 2@1/1 005 ° ®90 30 1 5 ®20 40 .301/1 1.501/1 2N3997 80 5 80-240 .. Tags: datasheet abstract.. |
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First line: ENGLAND SEMICONDUCTOR b5b4^3 DDODOSa TO-G1 ISOLATED COLLECTOR Case lc(MAX) 10-20A VcEO(SUS, 80-100V 10-50 VCEO (SAT) (SAT) Is/b (SUSI (MAX) IC/VCE IC/lB IC/lB IC/lB tOFF IC/lB Type (min-max A/V) A/A) @A/A) (Watts) (MHz) A/A) ilis A/A) Abstract: .. 1 1.5'@1/1 2N3996 80 5 40-120®1/2 2®5/.5 6-1 2®1/1 005°®90 30 1 5@20 40 .301/1 1.501/1 2N3997 80 5 80-240® 1/2 2@5/5 6-1.2@1/.1 005B®90 30 1.5@20 40 .301/.1 2@1/1 2N40753 80 3 30-90® 1/2 1@2/.2 .. Tags: datasheet abstract.. |
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First line: GENERAL TRANSISTOR CORP 3150001 OOOOOfe.11! General Transistor Corporation WEST FLORENCE AVENUE CALIFORNIA 90301 (213) 673-8422 Telex 65-3474 (213) 672-2905 Power Transistors ISOLATED COLLECTOR CASE TO-61 fc(MAX) Vceo<sus>b80-100V TyptNo. VCEO (IMI) hFE&C/VCE VCE(SAT) (V&ATA) VBE(SAT) Abstract: .. 1 2N3996 80 5 40-120В® 1/2 2В® 5/,5 .6-1.2В® 1/.1 ,005<В® 90 30 1.5В® 20 40 .3 @ 1/.1 1.5В® 1/.1 2N3997 80 5 80-240В® 1/2 2В®5/,5 ,6-1.2В®1/.1 .005В« В® 90 30 1.5В® 20 40 ,3В®1/.1 2В®1/.1 2N4075В« 80 .. Tags: datasheet abstract.. |
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First line: 2N5808 2N5808* GENERAL GQEOTE 3918590 GENERAL SEMICONUCTOR 02092 AMPS bvcjo Abstract: .. 2n3852 to-59 40 60 5.0 30.0 50- 150 1.0 1.0 2n3853 to-59 40 60 5.0 30.0 30- 90 1.0 1.0 2n3996 TO-111/Iso 80 100 8.0 30.0 40- 120 1.0 2.0 2n3997 TO-111/lso 80 100 8.0 30.0 -80- 240 1.0 2.0 2n3998 to-111 80 .. Tags: 2N5808* 2N5808 datasheet abstract.. |
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First line: STATE DEVICES -,-ir- |a3bbDll DQDE1Q7 PRELIMINARY DATA SHEET SFT2010 SFT2012 SFT2014 HIGH ENERGY TRANSISTOR VCEO 100, 120, VOLTS 14830 Valley View Avenue Mirada, California 90638 (213) 921-9660 910-583-4807 213-921-2396 CASE STYLE WITH .060 PINS Abstract: .. 2N3996 AND 2N3997 MAXIMUM RATINGS Rating Symbol Value Unit • Collector - Emitter Voltage VC£0 80 Volts Collector - Base Voltage VCB0 100 Volts Emitter - Base Voltage VEB0 5.5 Volts Collector Current .. Tags: datasheet abstract.. |
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First line: 2N5682 SILICON POWER TRANSISTORS CURRENT GAIN SATURATION VOLTAGES TYPE CASE VCBO VCEO VEBO VBE(s) NUMBER TYPE MIN. MAX. SILICON NPIM 2N1252 TO-5 10.0 1.50 1.30 .020 2N1253 TO-5 10.0 1.50 1.30 .020 2N1506 TO-5 28.0 1.50 1.50 .050 Abstract: .. 30 1.50 20 1.0 60.0 84 2N3996 3.33 .30 2.00 20 1.0 60.0 84 2N3997 3.33 .30 1.50 20 1.0 60.0 84 2 N 3998 3.33 .30 1.50 20 1.0 60.0 84 2N3999 25.00 .20 2.00 .20 20 5.0 60.0 85 2N4150 5.00 60.0 84 2N4231 5.00 60 .. Tags: 2N5682 datasheet abstract.. |
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First line: transistor 2N4113 2N4113 SDT430* Device Type 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913 2N4914 2N4 Abstract: .. 2N3996 80 40/120 1.0 0.25 1.0 40.0 30.0 * TO-111/I 184. 2N3997 80 80/240 1.0 0.25 1.0 40.0 30.0 * TO-111/I 184. 2N3998 80 40/120 1.0 0.25 1.0 40.0 30.0 * TO-111 184. 2N3999 80 80/240 1.0 0.25 1.0 40.0 30.0 .. Tags: SDT430* 2N4113 transistor 2N4113 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913 2N4914 |
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First line: BUX98PI BU724AS BD699 EQUIVALENT MJE2055* dk53 Bipolar Transistors Cross Reference INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N31 Abstract: .. 2N3996 2N5339 2N3997 2N5339 2N3999 2N5339 2N4000 2N5339 2N4001 2N5339 2N4002 BUV20 .. Tags: dk53 MJE2055* BD699 EQUIVALENT BU724AS BUX98PI weight transducer transistors BDV64B TIPL763A* TIPL763 TIP75C* TIP75 TIP74C tip74 TIP73C tip73a* TIP63 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N3420 2N3421 2N3439 2N3440 2N3445 2N3446 |
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First line: DK53* tip41c tip42c 2n3055 MJE2055* 2n3055 replacement DK53 BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N32 Abstract: .. 2N3996 2N5339 2N3997 2N5339 2N3999 2N5339 2N4000 2N5339 2N4001 2N5339 2N4002 BUV20 .. Tags: DK53 2n3055 replacement MJE2055* tip41c tip42c 2n3055 DK53* weight transducer upd6254cx* transistor 2sk2176 TIPL790 TIPL763A TIPL763* TIP75C* TIP74C tip74 TIP73C tip73a* 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240 2N3419 2N3420 2N3421 2N3439 2N3440 2N3445 2N3446 |
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First line: SDT7603 SDT1631* 2N4070* transistor 2N4113 Solitron Devices SOLITRON DEVICES flBbflbDE^OOOETba 'Ol PLANAR POWER TRANSISTORS Devices, DEVICE VCEO VcE(sat) CASE CHIP TYPE MIN/MAX (MHz) TYPE TYPE 2N2657 40/120 0.50 20.0 4.0* TO-5 2N2658 40/120 0.50 20.0 4.0* TO-5 2N2877 20/60 0.25 30.0 30.0* TO-111 Abstract: .. 0.25 1.0 50.0 30.0* TO-lll/I 184 2N3752 80 100/300 1.0 0.25 1.0 50.0 30.0* TO-lll/I 184 2N3996 80 40/120 1.0 0.25 1.0 40.0 30.0* TO-lll/I 184 2N3997 80 80/240 1.0 0.25 1.0 40.0 30.0* TO-lll/I 184 2N3998 .. Tags: Solitron Devices transistor 2N4113 2N4070* SDT1631* SDT7603 datasheet abstract.. |
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First line: BD699 transistor bu208 BU724AS BU808DXI buv18a BIPOLAR TRANSISTOR INTRODUCTION BIPOLAR CROSS REFERENCE order improve overall service, SGS-THOMSON introduced system preferred transistor sales types. following cross-reference intended guide identify sales types that suitable replacements application. Abstract: .. 2N3996 2N5339 2N5339. 2N3997 2N5339 2N5339. 2N3999 2N5339 2N5339. 2N4000 2N5339 2N5339. 2N4001 2N5339 2N5339. 2N4002 BUV20 BUV20. 2N4032 BUV20 BUV20. 2N4111 2N3716 2N3716. 2N4113 2N3716 2N3716. 2N4115 .. Tags: buv18a BU808DXI BU724AS transistor bu208 BD699 transistor mje29 transistor mj10005 transistor bu932 transistor BDX94 transistor BDV95 transistor BD912 transistor BD901 transistor bd610 transistor BD312 transistor BD245 transistor bd170 datasheet abstract.. |
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