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1 - 12 of about 12 for 2SK3813 |
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First line: FIELD EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER Abstract: .. The 2SK3813 is N-channel MOS Field Effect Transistor. designed for high current switching applications. FEATURES. • Super low on-state resistance. R DS on 1 = 5.3 mΩ MAX. VGS = 10 V, ID = 30 A R DS .. Tags: 2SK3813 |
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First line: FIELD EFFECT TRANSISTOR 2SK3813 SWITCHING N-CHANNEL POWER Abstract: .. The 2SK3813 is N-channel MOS Field Effect Transistor. designed for high current switching applications. FEATURES. • Super low on-state resistance. R DS on 1 = 5.3 mΩ MAX. VGS = 10 V, ID = 30 A R DS .. Tags: 2SK3813 |
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First line: Abstract: .. The 2SK3813 is N-channel MOS Field Effect Transistor. designed for high current switching applications. FEATURES. • Super low on-state resistance. R DS on 1 = 5.3 mΩ MAX. VGS = 10 V, ID = 30 A R DS .. Tags: 2SK3814 |
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First line: MOSFET Field Effect Transistor 2SK3813 TO-252 Abstract: .. MOS Field Effect Transistor 2SK3813. Features. Low On-state resistance. RDS on 1 = 5.3 mÙ MAX. VGS = 10 V, ID = 30 A RDS on 2 = 7.1 mÙ MAX. VGS = 4.5 V, ID = 30 A Low C iss : Ciss = 5500 pF TYP. Absolute Maximum .. Tags: 2SK3813 |
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First line: uPA2719AGR RJH60F5DPK RJH60* RJH60F7* rjh60f5* Solutions Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, IGBTs System designs that save energy have valuable marketing advantages. products typically must deliver increasingly complex functionality higher levels performance combination tha Abstract: .. 2SK3813. TO-251 MP-3 YES 40 ±20 60 84 5.3 7.1 4.2 5.3 23.5 96. 2SK3814 YES 60 ±20 60 84 7.9 10.5 7.0 8.7 26 95. 2SK3484 YES. 100. ±20 16 30 110 148 100.0 125.0 5 20. 2SK3483 YES ±20 28 40 45 59 41.0 52.0 13 49. 2SK3482 .. Tags: rjh60f5* RJH60F7* RJH60* RJH60F5DPK uPA2719AGR datasheet abstract.. |
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First line: uPA2749UT1A uPA2749UT1A* uPA2733GR uPA2591T1H 2SK4075 PowerMOSFET www.renesas.eu 2010.04 Abstract: .. 5.3 7.1 60 84 TO-251 500 2SK3813. www.renesas.eu 8. Single N-Channel. VDSS [V] RDS ON max mW @ VGS = ID [A] PD [W] @TC = 25°C. Package. Packing Quantity Automotive Qualified. Device. 10 V 5.0 V 4.5 V 4.0 .. Tags: 2SK4075 uPA2591T1H uPA2733GR uPA2749UT1A* uPA2749UT1A datasheet abstract.. |
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First line: 2sk4202 mosfet 2sk4143 uPA2749UT1A uPA2804T1L 2sk4075 PowerMOSFET February 2010 Dear User, This overview contains current PowerMOSFET portfolio: Listed configuration (single/dual) polarity Sorted voltage first, followed resistance current Total power dissipation package information also provided Dev Abstract: .. 5.3 7.1 60 84 TO-251 500 2SK3813. * Product is under development and might be subject to change without notice. Single N-Channel Issue 1/2010 Page 6. VDSS [V] RDS ON max mW @ VGS = ID [A] PD [W] @TC .. Tags: 2sk4075 uPA2804T1L uPA2749UT1A mosfet 2sk4143 2sk4202 datasheet abstract.. |
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First line: PA2732UT1A mini USB B 8pin 2SK4075 PA1870B PA2724 Abstract: .. 2SK3813 5.3 m 2SK3899 5.3 m 2SK3355 5.8 m 2SK3432 4.0 m 2SK3402 15 m 2005 2006 20082010 2 5 20 10 4pin EFLIP 4pin EFLIP-LGA1.96 mm 2, h0 .. Tags: PA2724 PA1870B 2SK4075 mini USB B 8pin PA2732UT1A datasheet abstract.. |
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First line: 2SK927 N13T1 2SK2500 transistor NEC 2SK2500 2SK2500* Abstract: .. 2SK3813 0.7 2.2. 2SK3900 0.7 2.3. 2SK3943 0.7 2.3. 2SK425 0.7 0.8. 2SK426 0.7 0.8. 2SK432 0.7 1.8 .. Tags: 2SK2500* transistor NEC 2SK2500 2SK2500 N13T1 2SK927 datasheet abstract.. |
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First line: UPD78F0034BYGC UPD78F0859MCA UPD78F0501* UPD16430DGF uPD78F0513* Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 2010 1.Please inquire Renesas Electronics sales person about lead-free product status while listed following table. 2.Plea Abstract: .. 2SK3813 -AZ WS60-00-1. 2SK3813-Z -AZ IR60-00-3. 2SK3814 -AZ WS60-00-1. 2SK3814-Z -AZ IR60-00-3. 2SK3899-ZK -AZ IR60-00-3. 2SK3900-ZP -AY IR60-00-3. 2SK3901-ZK -AZ IR60-00-3. 2SK3902-ZK -AZ IR60 .. Tags: uPD78F0513* UPD16430DGF UPD78F0501* UPD78F0859MCA UPD78F0034BYGC datasheet abstract.. |
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First line: 2SK2500 upa1559h UPD16861GS 2SK2500* transistor NEC 2SK2500 Electronics Corporation Product Information China RoHS (Semiconductor Devices) 1/708 Feb. 2010 Electronics discloses information contained substances subject regulation semiconductor devices, evaluation boards, development tools. Electronic Abstract: .. 2SK3813 0 -Z-E1-AZ 10 X O O O O OCompliant. 2SK3813-AZ 10 X O O O O OCompliant. 2SK3813-Z-AZ 10 X O O O O OCompliant. 2SK3813-Z-E1-AZ 10 X O O O O OCompliant. 2SK3813-ZK-E1-AY 10 X O O O O OCompliant. 2SK3813 .. Tags: transistor NEC 2SK2500 2SK2500* UPD16861GS upa1559h 2SK2500 datasheet abstract.. |
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First line: 3SK14 NEC 2SK927 N13T1 2sk2500 2SK2500* Abstract: .. 2SK3813 0.7 2.2 2SK3900 0.7 2.3 2SK3943 0.7 2.3 2SK425 0.7 0.8 2SK426 0.7 0.8 2SK432 0.7 1 .. Tags: 2SK2500* 2sk2500 N13T1 2SK927 3SK14 NEC datasheet abstract.. |
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