2SJ601
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Field Effect Transistor 2SJ601
TO-252
+0.15 1.50-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7
MOSFET
Features
on-resistance RDS(on)1 RDS(on)2 MAX. (VGS =-10
Unit:
+0.2 9.70-0.2
+0.1 0.80-0.1
+0.28 1.50-0.1
+0.25 2.65-0.1
Built-in gate protection diode
+0.15 4.60-0.15
+0.15 0.50-0.15
Ciss: Ciss 3300 TYP.
0.127
+0.15 5.55-0.15
Gate Drain Source
+0.1 0.60-0.1
Absolute Maximum Ratings
Parameter Drain source voltage Gate source voltage Drain current (DC) Drain current(pulse) Power dissipation TC=25 TA=25 Channel temperature Storage temperature duty cycle Symbol VDSS VGSS Tstg Rating +150 Unit
3.80
MAX. (VGS -4.0 =-18
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2SJ601
Electrical Characteristics
Parameter Drain cut-off current Gate leakage current Gate source cutoff voltage Forward transfer admittance Drain source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 20V,VDS=0 3300 VDS=-10V,VGS=0,f=1MHZ VGS(on)=-30V,ID=-18A ,VDD=-10V,RG=0 -36A VDD= =-10 -36A, di/dt
MOSFET
Unit
VGS(off) VDS=-10V,ID=-1mA RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) VDS=-10V,ID=-18A VGS=-10V,ID=-18A VGS=-4.0V,ID=-18A
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