2SD2530
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2SD2530 - 2SD2530
2SD2530
Silicon triple diffusion planer type Darlington
4.2±0.2
power amplification
13.0±0.2
10.0±0.2 1.0±0.2
5.0±0.1
Features
High forward current transfer ratio Allowing supply with radial taping collector emitter saturation voltage VCE(sat):
2.5±0.1
1.2±0.1 1.48±0.2
2.25±0.2
18.0±0.5 Solder
0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1
Absolute Maximum Ratings 25°C
Parameter Collector base voltage Collector emitter voltage Emitter base voltage Peak collector current Collector current Collector power dissipation 25°C 25°C Tstg Symbol VCBO VCEO VEBO Rating +150 Unit
2.5±0.2
2.5±0.2
Base Collector Emitter MT-4 Package
Internal Connection
Junction temperature Storage temperature
Electrical Characteristics 25°C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Collector emitter saturation voltage VCE(sat) VBE(sat) tstg Conditions Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time 0.27 Unit
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