2SC1156
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2SA646 - 2SA646
2SC1156 - 2SC1156
Silicon Power Transistors
2SC1156
DESCRIPTION TO-202 package transition frequency type 2SA646 APPLICATIONS power amplifier switching applications
PINNING(see Fig.2) Base Collector Emitter Fig.1 simplified outline (TO-202) symbol DESCRIPTION
Absolute maximum ratings (Ta=25?
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25? CONDITIONS Open emitter Open base Open collector VALUE -40~150 -40~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SC1156
TYP.
UNIT
VCEsat VBEsat V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO
Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current current gain Transition frequency
IC=300mA IB=30m IC=300mA IB=30m IC=100µA;IE=0 IC=1mA; IB=0 IE=100µA; IC=0 VCB=90V; IE=0 VEB=5V; IC=0 IC=300mA VCE=4V IE=100mA VCB=10V
Silicon Power Transistors
PACKAGE OUTLINE
2SC1156
Fig.2 outline dimensions
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