2SB539
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2SB539 - 2SB539
2SB539 - 2SB539
Silicon Power Transistors
2SB539
DESCRIPTION TO-3 package power dissipation APPLICATIONS amplifier applications high-power high-fidelity audio frequency amplifier output stage
PINNING(see Fig.2) Base Emitter Collector DESCRIPTION Fig.1 simplified outline (TO-3) symbol
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -130 -130 -65~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IE=-1mA ;IC=0 IC=-6A; IB=-0.6A IC=-6A VCE=-5V VCB=-130V; IE=0 VEB=-5V; IC=0 IC=-2A VCE=-5V IC=-1A VCE=-5V -130 TYP.
2SB539
UNIT
-3.0 -2.5 -0.1 -0.1
Silicon Power Transistors
PACKAGE OUTLINE
2SB539
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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