2SB1416
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Top Searches for this datasheet
2SD2136 - 2SD2136
2SB1416 - 2SB1416
2SB1416
Silicon epitaxial planar type
3.8±0.2
low-frequency power amplification Complementary 2SD2136 Features
High forward current transfer ratio which satisfactory linearity collector emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping
10.8±0.2
7.5±0.2
4.5±0.2
0.65±0.1 2.5±0.1
0.85±0.1 1.0±0.1
16.0±1.0
0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
Parameter Collector base voltage Collector emitter voltage Emitter base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO Tstg
Rating +150
Unit
2.05±0.2
Absolute Maximum Ratings 25°C
0.5±0.1
0.4±0.1
2.5±0.2
2.5±0.2
Emitter Collector Base MT-3-A1 Package
Electrical Characteristics 25°C
Parameter Collector cutoff current Symbol ICES ICEO Emitter cutoff current Collector emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) Rank classification Rank hFE1 VCE(sat) VBE(sat) tstg Conditions 0.375 -1.8 -1.2 -200 -300 Unit
2SB1416
Without heat sink Ta=25°C IB=-8mA
VCE=-4V 25°C
Collector power dissipation
Collector current
-7mA -6mA -5mA -4mA -3mA -2mA -1mA
Collector current
Ta=75°C
-25°C
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=8
VCE=-4V
VCB=-5V f=200MHz TC=25°C
Forward current transfer ratio
Transition frequency (MHz)
1000
Ta=75°C
25°C
Ta=75°C Ta=25°C Ta=-25°C 0.01
-25°C
0.001 1000
-0.01 -0.03 -0.1 -0.3
Collector current
Collector current (mA)
Collector current
Area safe operation (ASO)
-100 Single pulse TC=25°C
Rth(t)
Without heat sink
Thermal resistance Rth(t) (°C/W)
Collector current
-0.3 -0.1 t=10ms t=1ms
-0.03 -0.01 -0.1 -0.3
-100
10-1 10-4
10-3
10-2
10-1
Collector emitter voltage
Time
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2001
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