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2SB1373 2SD2066


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2SB1373 - 2SB1373  
2SD2066 - 2SD2066  

2SD2066
high power amplification Complementary 2SB1373
Unit:
15.0±0.5 13.0±0.5 4.0±0.1
4.5±0.2 4.0±0.1
High breakdown voltage: VCEO 160V (min.) Extremely satisfactory linearity forward current transfer ratio High transition frequency Wide area safe operation (ASO) (TC=25°C)
12.5
Absolute Maximum Ratings
Parameter Symbol VCBO VCEO VEBO Collector base voltage
Collector emitter voltage Emitter base voltage Peak collector current Collector current
Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
Tstg
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current
ICBO IEBO hFE1 hFE3
Forward current transfer ratio
hFE2*
Base emitter voltage
Collector emitter saturation voltage Transition frequency
VCE(sat)
Collector output capacitance
Rank classification
Rank hFE2
disc
10.5±0.5 2.0±0.1 20.0±0.3 19.0±0.3 15.0±0.2 3.2±0.1 16.2±0.5 Solder 2.0±0.2 1.1±0.1 1.4±0.3
Features
Ratings
Unit
5.45±0.3
0.6±0.2
10.9±0.5
1:Base 2:Collector 3:Emitter EIAJ:SC-65(a) TOP-3 Package(a)
+150
(TC=25°C)
Symbol
Conditions
Unit
160V,
20mA
0.8A
0.5A, 1MHz
10V, 1MHz
TC=Ta With heat sink Without heat sink (PC=2.5W) 700mA
2SD2066
IB=800mA TC=25°C 600mA 500mA 400mA 300mA 200mA VCE=5V
Collector power dissipation
Collector current
Collector current
TC=-25°C
25°C 100°C
100mA
50mA
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=10 0.03 0.01 0.003 0.001 10000
1000 VCE=5V 0.01 0.03
VCE=5V f=1MHz TC=25°C
Forward current transfer ratio
TC=100°C 25°C -25°C
1000 TC=100°C -25°C 25°C
Transition frequency (MHz)
3000
Collector current
Collector current
Collector current
10000
Area safe operation (ASO)
IE=0 f=1MHz TC=25°C repetitive pulse TC=25°C t=10ms
Collector output capacitance (pF)
3000
Collector current
0.03 100ms
1000
0.01 1000
Collector base voltage
Collector emitter voltage
Rth(t)
10000 Note: measured Ta=25°C under natural convection. PT=10V 0.2A (2W) without heat sink PT=10V 1.0A (10W) with heat sink
2SD2066
Thermal resistance Rth(t) (°C/W)
1000
10-4
10-3
10-2
10-1
Time
Request your special attention precautions using technical information semiconductors described this book
products technical information described this book exported provided non-residents, laws regulations exporting country, especially, those with regard security export control, must observed. technical information described this book intended only show main characteristics application circuit examples products, license granted under intellectual property right other right owned company other company. Therefore, responsibility assumed company infringement upon such right owned other company which arise result technical information described this book. products described this book intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this book subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with range absolute maximum rating guaranteed operating conditions (operating power supply voltage operating environment etc.). Especially, please careful exceed range absolute maximum rating transient state, such power-on, power-off mode-switching. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. Comply with instructions order prevent breakdown characteristics change external factors (ESD, EOS, thermal stress mechanical stress) time handling, mounting customer's process. When using products which damp-proof packing required, satisfy conditions, such shelf life elapsed time since first opening packages. This book reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd.

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