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2SB1373 2SD2066
Top Searches for this datasheet2SB1373 - 2SB1373 2SD2066 - 2SD2066 2SD2066 high power amplification Complementary 2SB1373 Unit: 15.0±0.5 13.0±0.5 4.0±0.1 4.5±0.2 4.0±0.1 High breakdown voltage: VCEO 160V (min.) Extremely satisfactory linearity forward current transfer ratio High transition frequency Wide area safe operation (ASO) (TC=25°C) 12.5 Absolute Maximum Ratings Parameter Symbol VCBO VCEO VEBO Collector base voltage Collector emitter voltage Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Tstg Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current ICBO IEBO hFE1 hFE3 Forward current transfer ratio hFE2* Base emitter voltage Collector emitter saturation voltage Transition frequency VCE(sat) Collector output capacitance Rank classification Rank hFE2 disc 10.5±0.5 2.0±0.1 20.0±0.3 19.0±0.3 15.0±0.2 3.2±0.1 16.2±0.5 Solder 2.0±0.2 1.1±0.1 1.4±0.3 Features Ratings Unit 5.45±0.3 0.6±0.2 10.9±0.5 1:Base 2:Collector 3:Emitter EIAJ:SC-65(a) TOP-3 Package(a) +150 (TC=25°C) Symbol Conditions Unit 160V, 20mA 0.8A 0.5A, 1MHz 10V, 1MHz TC=Ta With heat sink Without heat sink (PC=2.5W) 700mA 2SD2066 IB=800mA TC=25°C 600mA 500mA 400mA 300mA 200mA VCE=5V Collector power dissipation Collector current Collector current TC=-25°C 25°C 100°C 100mA 50mA Ambient temperature (°C) Collector emitter voltage Base emitter voltage VCE(sat) Collector emitter saturation voltage VCE(sat) IC/IB=10 0.03 0.01 0.003 0.001 10000 1000 VCE=5V 0.01 0.03 VCE=5V f=1MHz TC=25°C Forward current transfer ratio TC=100°C 25°C -25°C 1000 TC=100°C -25°C 25°C Transition frequency (MHz) 3000 Collector current Collector current Collector current 10000 Area safe operation (ASO) IE=0 f=1MHz TC=25°C repetitive pulse TC=25°C t=10ms Collector output capacitance (pF) 3000 Collector current 0.03 100ms 1000 0.01 1000 Collector base voltage Collector emitter voltage Rth(t) 10000 Note: measured Ta=25°C under natural convection. PT=10V 0.2A (2W) without heat sink PT=10V 1.0A (10W) with heat sink 2SD2066 Thermal resistance Rth(t) (°C/W) 1000 10-4 10-3 10-2 10-1 Time Request your special attention precautions using technical information semiconductors described this book products technical information described this book exported provided non-residents, laws regulations exporting country, especially, those with regard security export control, must observed. technical information described this book intended only show main characteristics application circuit examples products, license granted under intellectual property right other right owned company other company. Therefore, responsibility assumed company infringement upon such right owned other company which arise result technical information described this book. products described this book intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). Consult sales staff advance information following applications: Special applications (such airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems safety devices) which exceptional quality reliability required, failure malfunction products directly jeopardize life harm human body. applications other than standard applications intended. products product specifications described this book subject change without notice modification and/or improvement. final stage your design, purchasing, products, therefore, most up-to-date Product Standards advance make sure that latest specifications satisfy your requirements. When designing your equipment, comply with range absolute maximum rating guaranteed operating conditions (operating power supply voltage operating environment etc.). Especially, please careful exceed range absolute maximum rating transient state, such power-on, power-off mode-switching. Otherwise, will liable defect which arise later your equipment. Even when products used within guaranteed values, take into consideration incidence break down failure mode, possible occur semiconductor products. Measures systems such redundant design, arresting spread fire preventing glitch recommended order prevent physical injury, fire, social damages, example, using products. Comply with instructions order prevent breakdown characteristics change external factors (ESD, EOS, thermal stress mechanical stress) time handling, mounting customer's process. When using products which damp-proof packing required, satisfy conditions, such shelf life elapsed time since first opening packages. This book reprinted reproduced whether wholly partially, without prior written permission Matsushita Electric Industrial Co., Ltd. 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