2SA1006 2SA1006A 2SA1006B
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2SA1006 - 2SA1006
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Silicon Power Transistors
2SA1006 2SA1006A 2SA1006B
DESCRIPTION
TO-220 package
type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS frequency power amplifier frequency power amplifier
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER 2SA1006 VCBO Collector-base voltage 2SA1006A 2SA1006B 2SA1006 VCEO Collector-emitter voltage 2SA1006A 2SA1006B VEBO Tstg Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 Open collector Open base Open emitter CONDITIONS VALUE -180 -200 -250 -180 -200 -250 -1.5 -3.0 -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
2SA1006 2SA1006A 2SA1006B
CONDITIONS IC=-0.5A; IB=-50mA IC=-0.5A ;IB=-50mA VCB=-150V ;IE=0 VEB=-3V; IC=0 IC=-5mA VCE=-5V IC=-150mA VCE=-5V IE=0 VCB=-10V,f=1MHz IC=-100mA VCE=10V
TYP.
-1.0 -1.5
UNIT
hFE-2 Classifications 60-120 100-200 160-320
Silicon Power Transistors
PACKAGE OUTLINE
2SA1006 2SA1006A 2SA1006B
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1006 2SA1006A 2SA1006B
Silicon Power Transistors
2SA1006 2SA1006A 2SA1006B
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