| Fulltext Datasheet Results |
1 - 50 of about 129 for 2N5089 |
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First line: transistor 2n5088 equivalent 2n5088 transistor 2N5089 equivalent 2N5088 equivalent 2N5088/5089 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 2N5088: 2N5089: Collector Dissipation: (max)=625mW Abstract: .. AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V. • Collector Dissipation: PC max =625mW. ABSOLUTE MAXIMUM RATINGS TA=25 ELECTRICAL CHARACTERISTICS TA .. Tags: 2n5088 transistor transistor 2n5088 equivalent transistor 2N5088 characteristics of 2N5088 2N5089 NPN 2N5089 equivalent 2n5088 transistor 2N5088 equivalent 2N5088 2N508* 2N4403 2N5088 2N5089 |
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First line: 2n5088 transistor 2N5089 NPN transistor 2n5088 equivalent 2N5089 equivalent 2N5088 equivalent 2N5088/2N5089 EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER DESCRIPTION device designed noise, high gain, general purpose amplifier applications collector currents from 50mA. Abstract: .. UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-040,A. NPN GENERAL PURPOSE AMPLIFIER. DESCRIPTION The device is designed for low noise, high .. Tags: 2N5089 equivalent transistor 2n5088 equivalent 2N5089 NPN 2n5088 transistor transistor 2N5088 characteristics of 2N5088 2N5088 equivalent 2n5088 2N5088 2N5089 |
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First line: 2n5088 transistor 2N5089 equivalent 2N5088/2N5089 EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER DESCRIPTION device designed noise, high gain, general purpose amplifier applications collector currents from 50mA. Abstract: .. UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-040,A. NPN GENERAL PURPOSE AMPLIFIER. DESCRIPTION The device is designed for low noise, high .. Tags: 2N5089 equivalent 2n5088 transistor transistor 2N5088 2N5089 NPN 2N5088 equivalent 2n5088 2N5088 2N5089 |
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First line: 2n5088 transistor TRANSISTOR D 471 2N5088/5089 EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCeo 2N5088: 2N5089: Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage 2N5088 VcBO 2N5089 Abstract: .. TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCeo = 2N5088: 30V 2N5089: 25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS Ta=25 °C Characteristic .. Tags: TRANSISTOR D 471 2n5088 transistor datasheet abstract.. |
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First line: 2N5089 equivalent ST 024 2N5089 NPN 2n5088 transistor 2N5089 equivalent 2N5088 2N5089 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5086 2N5087 recommended. special request, these trans Abstract: .. ST 2N5088 / 2N5089. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary .. Tags: 2N5089 equivalent 2n5088 transistor ST 024 2N5089 equivalent 2N5089 NPN 2n5088 2N5088 2N5089 2N5086 2N5087 |
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First line: ST 024 transistor 2n5088 equivalent 2N5088 2N5089 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5086 2N5087 recommended. special request, these transistors manufactured different configur Abstract: .. ST 2N5088 / 2N5089. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary .. Tags: transistor 2n5088 equivalent ST 024 characteristics of 2N5088 2N5089 equivalent 2n5088 2N5088 2N5089 2N5086 2N5087 |
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First line: 911F 2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 Abstract: .. 2N5088 / MMBT5088 / 2N5089 / MMBT5089. 2N5088 2N5089. MMBT5088 MMBT5089. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications .. Tags: 911F 2n5088 transistor 2N5089 equivalent 2n5088 2N5088 2N5089 |
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First line: 2N5088 equivalent 2N5087 equivalent 2N5088 2N5089 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5086 2N5087 recommended. special request, these transistors manufactured different configur Abstract: .. ST 2N5088 / 2N5089. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary .. Tags: 2N5087 equivalent 2N5088 equivalent 2n5088 2N5088 2N5089 2N5086 2N5087 |
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First line: 2n5088 transistor 2N5088 2N5089 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5086 2N5087 recommended. special request, these transistors manufactured different configurations. Absolute Abstract: .. ST 2N5088 / 2N5089. NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary .. Tags: 2n5088 transistor 2n5088 2N5088 2N5089 2N5086 2N5087 |
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First line: 2n5088 transistor 2N5081 2N5081* 2N5086 2N5087 2N5088 2N5089 SILICON NOISE SMALL SIGNAL TRANSISTORS 2N5086, 2N5087 (PNP) 2N5088; 2N5089 (NPN) SILICON PLANAR EPITAXIAL TRANSISTORS NOISE PREAMPLIFIER CIRCUITS. CASE T0-92A ABSOLUTE MAXIMUM RATINGS voltage current v.Ium Collector-Base Voltage Collector Abstract: .. 1 I 2N5086 2N5087 2N5088 2N5089 PNP . NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 NPN ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN ÄF .. Tags: 2N5081* 2N5081 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N3904 B21 SL 100 NPN Transistor SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continuous (mA) (mW) Min. Max. lc(mA) Max. lc(mAI Ig(mA) 2N3903 2N3904 iHHj 2N3905 hhmi 2N3906 SjjMjfj 2N4123 2N41 Abstract: .. NPN 80 60 400 10 ■■M iiib 100 50 250 625 2 N5088 NPN 30 300 900 HHI| ■¡■jl 10 »IM 75 2.0 50 350 2N5089 NPN 25 400 1200 Mi «■I gH| 75 2.0 50 350 2N5219 NPN 15 35 500 Mai 10 HHBgj 10 WMI 200 2.0 100 350 2N5220 NPN 15 .. Tags: SL 100 NPN Transistor 2N3904 B21 2n5088 transistor datasheet abstract.. |
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First line: 2n5088 transistor 2N5089 equivalent Amplifier Transistors Abstract: .. Amplifier Transistors NPN Silicon. MAXIMUM RATINGS. Rating Symbol 2N5088 2N5089 Unit. Collector‐Emitter Voltage VCEO 30 25 Vdc. Collector‐Base Voltage VCBO 35 30 Vdc. Emitter‐Base Voltage VEBO .. Tags: 2N5089 equivalent 2n5088 transistor 2n5088 2/2N5088* datasheet abstract.. |
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First line: AMER PHIIPS/DISCRETE ------ bbS-3131 001750b 2N5088 2N5089 T-a^-ai SIICON PANAR EPITAXIA TRANSISTOR N-P-N small-signal transistor plastic TO-92 envelope intended low-noise stages audio equipment. Complementary types 2N50S6/2N5087. QUICK REFERENCE DATA Abstract: .. N AMER PHILIPS/DISCRETE I ÃŽ L ------ SSE D â– bbS-3131 001750b 7 L 2N5088 2N5089 T-a^-ai SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended .. Tags: datasheet abstract.. |
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First line: 2N2089* 2N2089RLRA 2N5088, 2N5089 Amplifier Transistors Pb-Free Packages Available* Abstract: .. 2N5088, 2N5089. Amplifier Transistors NPN Silicon. Features. ∞ Pb-Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector - Emitter Voltage 2N5088 2N5089. VCEO. 30 25. Vdc .. Tags: 2N2089RLRA 2N5089 equivalent 2n2089* 2N5088 2N5089 |
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First line: 2N5089 equivalent 2N5088 equivalent transistor 2n5088 equivalent 2N5088, 2N5089 Amplifier Transistors Pb-Free Packages Available* Abstract: .. 2N5088, 2N5089. Amplifier Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage 2N5088 2N5089. VCEO. 30 25. Vdc .. Tags: transistor 2n5088 equivalent 2N5088 equivalent 2N5089 equivalent 2n2089* 2N5088 2N5089 |
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First line: SMALL SIGNAL GENERAL PURPOSE TRANSISTORS 2N5089 Epitaxial Silicon Transistors Application Amplifier Circuit, Switching Circuit, Inverter RoHS Compliant Abstract: .. 2N5089. SMALL SIGNAL GENERAL PURPOSE TRANSISTORS. TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com. Page 1 of 4 Tel: 800 -247-2232 800 -TAITRON 661 -257-6060 Fax: 800 -TAITFA .. Tags: 2N5089 |
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First line: 2N5089 equivalent SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 Abstract: .. NPN SILICON EPITAXIAL TRANSISTORS 2N5088. 2N5089 TO-92 CBE. Amplifier Transistors. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS. Collector -Base Voltage VCBO 35 30 V. Collector .. Tags: 2N5089 equivalent 2N5088 2N5089 |
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First line: 2N5089 equivalent SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 Abstract: .. NPN SILICON EPITAXIAL TRANSISTORS 2N5088. 2N5089 TO-92 CBE. Amplifier Transistors. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS. Collector -Base Voltage VCBO 35 30 V. Collector .. Tags: 2N5089 equivalent 2N5088 2N5089 |
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First line: 2N5089 equivalent 2N2089* 2N5088, 2N5089 Amplifier Transistors Pb-Free Packages Available* Abstract: .. 2N5088, 2N5089. Amplifier Transistors NPN Silicon. Features. • Pb Free Packages are Available* MAXIMUM RATINGS. Rating Symbol Value Unit. Collector Emitter Voltage 2N5088 2N5089. VCEO. 30 25. Vdc .. Tags: 2N5089 equivalent 2n2089* 2N5088 2N5089 |
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First line: TO-92 SOT-23 Mark: General Purpose Amplifier Abstract: .. Symbol Parameter Value Units VcEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VcBO Collector-Base Voltage 2N5088 35 V 2N5089 30 V Vebo Emitter-Base Voltage 4.5 V lc Collector Current - Continuous .. Tags: datasheet abstract.. |
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First line: 2N508B National 2N5088 2N5089 MMBT5088 MMBT5089 TO-92 General Purpose Amplifier This device designed noise, high gain, general purpose amplifier applications collector currents from Sourced from Process Absolute Maximum Ratings* Abstract: .. National Semiconductor Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose .. Tags: 2N508B datasheet abstract.. |
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First line: 2N5089 equivalent 2N5089 MOTOROLA Order this document 2N5088/D Amplifier Transistors Abstract: .. 2N5089. IC = 1.0 mAdc, VCE = 5.0 Vdc 2N5088. 2N5089. IC = 10 mAdc, VCE = 5.0 Vdc 2 2N5088. 2N5089. hFE. 300 400. 350 450. 300 400. 900 1200. — — — — — Collector ‐ Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 .. Tags: 2N5089 equivalent 2N5089 MOTOROLA 2N508 2/2N5088* 2N5088 |
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First line: c 5088 2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 Abstract: .. 2N5088 2N5089. MMBT5088 MMBT5089. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50 mA .. Tags: c 5088 5088 2N5088 2N5088 2N5089 |
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First line: SAMSUNG SEMICONDUCTOR 7^142 0007181 2N5089 EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: =25V Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Refer 2N5088 graphs T-29-21 Characteristic Symbol Rating Unit Abstract: .. SAMSUNG SEMICONDUCTOR INC l^E D | 7^142 _ 0007181 T 2N5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Vao =25V • Collector Dissipation: Pc max .. Tags: datasheet abstract.. |
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First line: 2N5089 USHA (INDIA) AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Vceo= 2N5089: Collector Dissipation: (max)=625mW ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Abstract: .. Transistors 2N5089 USHA INDIA LTD AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Vceo= 2N5089: 25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS Ta=25 °C .. Tags: datasheet abstract.. |
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First line: TNR 271 2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 Abstract: .. 2N5088 2N5089. MMBT5088 MMBT5089. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50 mA .. Tags: TNR 271 cjc - CDP 007 5088 2N5088 2N5089 |
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First line: 2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 Abstract: .. 2N5088 2N5089. MMBT5088 MMBT5089. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50 mA .. Tags: 5088 2N5088 2N5089 |
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First line: 2N5089 equivalent 2N5086 2N5087 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5088 2N5089 recommended. special request, these transistors manufactured different configurations. Absolute M Abstract: .. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic .. Tags: 2N5089 equivalent 2N5086 2N5086 2N5087 2N5088 2N5089 |
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First line: 2N5087 equivalent transistor 2n5087 2N5086 2N5087 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5088 2N5089 recommended. special request, these transistors manufactured different configur Abstract: .. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic .. Tags: transistor 2n5087 2N5087 equivalent 2N5086 2N5086 2N5087 2N5088 2N5089 |
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First line: Abstract: .. 07 2N5088 TO-92 92 35 30 5 50 20 300 10 5 350 1 5 300 900 0.1 5 0.5 10 4 3 Note 3 07 5-102 2N5089 TO-92 92 30 25 4.5 50 15 400 10 5 450 1 5 400 120 0.1 5 0.5 10 4 2 Note 3 07 5-102 2N5210 TO-92 92 50 50 50 .. Tags: datasheet abstract.. |
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First line: transistor 2N5086 datasheet transistor 2n5087 2N5087 equivalent 2N5086 2N5087 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5088 2N5089 recommended. special request, these transistors man Abstract: .. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic .. Tags: transistor 2n5087 transistor 2N5086 datasheet 2N5087 equivalent 2N5087 2N5086 2N5086 2N5087 2N5088 2N5089 |
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First line: transistor 2N5086 datasheet 2N5087 equivalent 2N5086 2N5087 Silicon Epitaxial Planar Transistor switching amplifier applications. transistor subdivided into group according current gain. complementary type transistor 2N5088 2N5089 recommended. special request, these transistors manufactured differen Abstract: .. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic .. Tags: 2N5087 equivalent transistor 2N5086 datasheet 2N5087 2N5086 2N5086 2N5087 2N5088 2N5089 |
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First line: 603 marking marking 603 npn transistor N5088 2n 5088 transistor /lit EWU') POWER SEMICONDUCTOR 2N5088/5089 MMBT5088/5089 SMALL SIGNAL TRANSISTORS Noise High Gain Epitaxial Planar Construction Available both Through-Hole Surface Mount Packages General Purpose, Noise Amplifier MMBT5088 MMBT5089 Abstract: .. 1Q MMBT5089 1R Approx Weight: TO-92 0.18 grams SOT-23 0.008 grams j 2N5088 / 2N5089 Bottom View /CB rar H M SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 .. Tags: 2n 5088 transistor N5088 marking 603 npn transistor 603 marking datasheet abstract.. |
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First line: 2N5086 2N5087 PHILIPS INTERNATIONAL 711005b D0M2t.74 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS T-Z^Zf P-N-P small-signal transistors plastic TO-92 envelope intended low-noise stages audio equipment. Complementary types 2N5088/2N5089. QUICK REFERENCE DATA Abstract: .. Complementary types are 2N5088/2N5089. QUICK REFERENCE DATA Collector-emitter voltage open base Collector-base voltage {open emitter Collector current d.c. Totat power dissipation .. Tags: datasheet abstract.. |
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First line: 2N2297(S)* 2N2297(S) AMER PHILIPS/DISCRETE bbS3131 GQlbna T-2.7-0J Small Signal Devices GENERAL PURPOSE SWITCHING TRANSISTORS TYPES TYPE v"-." (typ) r=;"" (n>A) CmA) (MHz) (mA) 2N1613 TO-39 Abstract: .. 150 150 200 20 2N4401 TO-92 40 600 100 300 150 250 20 2N5088 TO-92 30 50 300 900 0.1 50 .5 2N5089 TO-92 25 50 400 1200 0.1 50 .5 2N6428 TO-92 50 200 250 650 0.1 100 1 2N6428A TO-92 50 200 250 650 0.1 100 1 2PC945 .. Tags: 2N2297(S) 2N2297(S)* datasheet abstract.. |
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First line: SMD MARKING CODE C2U 2n3904 smd 2N2369 SOT-23 transistor smd 2N4403 2N3904 TRANSISTOR SMD CENTRAL SEMICONDUCTOR Central semiconductor corp. Adams Avenue Hauppauge, York llflTita DDQD43D SURFACE MOUNTED DEVICES TRANS SOT-23, SOT-89 Abstract: .. NOISE 30 50 300 900 0.1 50 CI Q 2N5088 CMPT5089 NPN LOW NOISE 25 50 400 1200 0.1 50 C1R 2N5089 CMPT5401 PNP HIGH VOLT 150 600 60 240 10 100 C2L 2N5401 CMPT5551 NPN HIGH VOLT 160 600 80 250 10 100 1 FF 2N5551 .. Tags: 2N3904 TRANSISTOR SMD transistor smd 2N4403 2N2369 SOT-23 2n3904 smd SMD MARKING CODE C2U datasheet abstract.. |
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First line: AMER PHILIPS/DISCRETE bbSB^Bl 37fl 2N5086 2N5087 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors plastic TO-92 envelope intended low-noise stages audio equipment. Complementary types 2N5088/2N5089. QUICK REFERENCE DATA Collector-emitter voltage {open base) Collector-base vol Abstract: .. Complementary types are 2N5088/2N5089. QUICK REFERENCE DATA Collector-emitter voltage {open base Collector-base voltage open emitter Collector current d.c. Total power dissipation .. Tags: datasheet abstract.. |
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First line: BC178B BC179a 2N3565 to-106 BC154 BC318B FAIRCHILD TRANSISTORS SMALL SIGNAL LEVEL NOISE AMPLIFIER TRANSISTORS ASCENDING VCeq) (Cont'd) Item DEVIC Pola rity VCEO Min/Max Min/Max Package BC522E 1200/2200 TO-92 BC113 120/- 200/- (Typ) TO-106 BC205 (Typ)/- 0.01 110/500 TO-106 BC205A (Typ)/- 0.01 110/220 Abstract: .. .0 — — 10 1.0 — — TO-18 13 BC114 25 120/- 0.1 200/- 10 3.0 1.0 — — TO-106 14 2N5089 25 400/1200 0.1 400/- 10 — — 2.0 WB TO-92 15 2N3565 25 70/- 0.1 150/600 1.0 — — — — TO-106 16 PN3565 .. Tags: BC318B BC154 2N3565 to-106 BC179a BC178B datasheet abstract.. |
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First line: 2N5133* 2N5129 TO-92 Plastic Package Tansistos (NPN) Maximum Ratings Electical Chaacteistics Unless Othew Spec i(ied) Type ^CBO VcEO ^EBO 'cBO (uA) (JA) (mA) ^CE(SAT) ^BE(SAT) (mA) (PF> (MHz) (mA) (nsi (MHz) Case Style 2N4953 0.625 0.05 0-92-1 2N4954 0.625 0.05 "0-92-1 2N4966 0.625 0.05 0.02 Abstract: .. 30 TO-92-1 2N5088 35 30 5 0.625 0.05 0.05 20 300 10 5 350 1 5 300 900 0.1 5 0.5 10 4 50 1 3 TO-92 2N5089 30 25 5 0.625 0.05 0.05 15 400 10 5 450 1 5 400 1200 0.1 5 0.5 10 4 50 1 2 TO-92 2N5127 20 12 3 0.625 0.05 0.05 10 15 .. Tags: 2N5129 2N5133* datasheet abstract.. |
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First line: GES93* SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continuous (mA) (mW) Min. Max. lc(mA) Max. lc(mAI Ig(mA) 2N3903 2N3904 iHHj 2N3905 hhmi 2N3906 SjjMjfj 2N4123 2N4124 Abstract: .. 60 400 10 â– â– M iiib 100 50 250 625 2 N5088 NPN 30 300 900 HHI| â– ¡â– jl 10 »IM 75 2.0 50 350 2N5089 NPN 25 400 1200 Mi «â– I gH| 75 2.0 50 350 2N5219 NPN 15 35 500 Mai 10 HHBgj 10 WMI 200 2.0 100 350 2N5220 NPN .. Tags: GES93* datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continuous (mA) (mW) Min. Max. lc(mA) Max. lc(mAI Ig(mA) 2N3903 2N3904 iHHj 2N3905 hhmi 2N3906 SjjMjfj 2N4123 2N4124 Abstract: .. 60 400 10 â– â– M iiib 100 50 250 625 2 N5088 NPN 30 300 900 HHI| â– ¡â– jl 10 »IM 75 2.0 50 350 2N5089 NPN 25 400 1200 Mi «â– I gH| 75 2.0 50 350 2N5219 NPN 15 35 500 Mai 10 HHBgj 10 WMI 200 2.0 100 350 2N5220 NPN .. Tags: datasheet abstract.. |
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First line: 2SA495 2SA564A to 106 2n5133 Level General Purpose Amplifiers TYPE POLA- CASE MAXIMUM RATINGS VCE(sat) N.F. RITY VCEO ntili (mW) (mA) mill (mA) (mA) (MHz) (MHi) (dB) 2N4061 TO-92B 2N4062 TO-92B 2N4248 TO-106 0.25 2N4249 TO-106 0.25 2N4250 TO-106 0.25 Abstract: .. P TO-92A 350 50 50 250 800 0.1 5 0.3 10 40 4 2 2N5088 N TO-92A 350 50 30 300 900 0.1 5 0.5 10 50 4 3 2N5089 N TO-92A 350 50 25 400 1200 0.1 5 0.5 10 50 4 2 2N5133 N TO-106 200 50 18 60 1000 1 5 0.4 10 40 5 - 2N5138 P TO-106 .. Tags: to 106 2n5133 2SA564A 2SA495 datasheet abstract.. |
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First line: 2SA495 to 106 2n5133 2N5133* Level General Purpose Amplifiers TYPE POLA- CASE MAXIMUM RATINGS VCE(sat) N.F. RITY VCEO ntili (mW) (mA) mill (mA) (mA) (MHz) (MHi) (dB) 2N4061 TO-92B 2N4062 TO-92B 2N4248 TO-106 0.25 2N4249 TO-106 0.25 2N4250 TO-106 0.25 Abstract: .. P TO-92A 350 50 50 250 800 0.1 5 0.3 10 40 4 2 2N5088 N TO-92A 350 50 30 300 900 0.1 5 0.5 10 50 4 3 2N5089 N TO-92A 350 50 25 400 1200 0.1 5 0.5 10 50 4 2 2N5133 N TO-106 200 50 18 60 1000 1 5 0.4 10 40 5 - 2N5138 P TO-106 .. Tags: 2N5133* to 106 2n5133 2SA495 datasheet abstract.. |
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First line: hp5082-2810* hp5082-2810 Comparators Feature Micropower Operation Under Conditions Design Note Williams Some micropower comparators have operating modes that allow excessive current drain. particular, poorly designed devices conduct large transient currents during switching. Such behavior causes dra Abstract: .. = 2N5089 = 2N2222 = POLYSTYRENE = 1% METAL FILM. Q1, Q2, Q8 ALL OTHER † * 6.04k* LM334. 2.7M 0.1. 50pF. V+ = 6.2 TO 12V. 74C14. 2.2μF. + 0.47μF. LT1004 1.2V × 3. Q7. Q5. Q1. Q6. GROUND ALL UNUSED 74C14 INPUTS. OUTPUT. Q4. Q3 .. Tags: hp5082-2810* hp5082-2810 HP5082 74C14* LTC1440 s |
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First line: TO-92 Case (Continued) TO-92-18R TYPE FAMILY LEAD CODE VcBO VCEO vEBO ICBO VcBC VCE<SAT) 'off *VCES *'CES *h,e(1kHZ) <mA) <mA) (PF) *Crb (MHz) **'CEV 2N4401 AMPUSWITCH 100* 0.75 2N4402 AMPUSWITCH 100* 0.75 2N4403 AMPUSWITCH 100* 0.75 Abstract: .. 2N5089 NPN LOW NOISE EBC 30 25 4.5 50 15 400 1,200 5.0 0.10 0.50 10 4.0 50 2.0 .. 2N5172 NPN LOW NOISE ECB 25 25 5.0 100 25 100 500 10 10 0.25 10 13 200* — — 2N5209 NPN LOW NOISE EBC 50 50 4.5 50 35 100 300 5.0 .. Tags: datasheet abstract.. |
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First line: philips BFW30 BFG65 2N4858 smd bd139 smd BAV90 AMER P^IL-IPS/DISCRETE 1^53=131 CONVERSION CONVERSION LIST (conventional type number type number) conventional microminiature Conventional microminiature conventional microminiature type type type typ& type type BA243 BC146/02 BC849B/C BC338 BC818 B Abstract: .. PMBT5087 to to 2N5088 PMBT5088 1N5267B PMIiIi5267B 2N5089 PMBT5089 2N929 BC850 2N5415 BST15 2N930 BNC850 2N5416 BST16 BCF81 2N6428 PMBT6428 2N1Ç13 BSR40 2N6429 PMBT6429 2N1711 BSR41 2N1893 .. Tags: BAV90 bd139 smd 2N4858 smd BFG65 philips BFW30 datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continuous (mA) (mW) Min. Max. lc(mA) Max. lc(mAI Ig(mA) 2N3903 2N3904 iHHj 2N3905 hhmi 2N3906 SjjMjfj 2N4123 2N4124 Abstract: .. 60 400 10 â– â– M iiib 100 50 250 625 2 N5088 NPN 30 300 900 HHI| â– ¡â– jl 10 »IM 75 2.0 50 350 2N5089 NPN 25 400 1200 Mi «â– I gH| 75 2.0 50 350 2N5219 NPN 15 35 500 Mai 10 HHBgj 10 WMI 200 2.0 100 350 2N5220 NPN .. Tags: datasheet abstract.. |
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First line: GES93* SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continuous (mA) (mW) Min. Max. lc(mA) Max. lc(mAI Ig(mA) 2N3903 2N3904 iHHj 2N3905 hhmi 2N3906 SjjMjfj 2N4123 2N4124 Abstract: .. 60 400 10 â– â– M iiib 100 50 250 625 2 N5088 NPN 30 300 900 HHI| â– ¡â– jl 10 »IM 75 2.0 50 350 2N5089 NPN 25 400 1200 Mi «â– I gH| 75 2.0 50 350 2N5219 NPN 15 35 500 Mai 10 HHBgj 10 WMI 200 2.0 100 350 2N5220 NPN .. Tags: GES93* datasheet abstract.. |
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First line: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continuous (mA) (mW) Min. Max. lc(mA) Max. lc(mAI Ig(mA) 2N3903 2N3904 iHHj 2N3905 hhmi 2N3906 SjjMjfj 2N4123 2N4124 Abstract: .. 60 400 10 â– â– M iiib 100 50 250 625 2 N5088 NPN 30 300 900 HHI| â– ¡â– jl 10 »IM 75 2.0 50 350 2N5089 NPN 25 400 1200 Mi «â– I gH| 75 2.0 50 350 2N5219 NPN 15 35 500 Mai 10 HHBgj 10 WMI 200 2.0 100 350 2N5220 NPN .. Tags: datasheet abstract.. |
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First line: 2N5133 2N5133* to-92b 2n3860* Level General Purpose Amplifiers type case maximum ratings vce(sat) n.f. vceo |mw| (mA) (mA) (mA) (MHz) (pF) (dB) 2N3707 TO-92B 2N3708 TO-92B 2N3709 TO-92B 2N3710 TO-92B Abstract: .. P TO-92A 350 50 50 250 800 0.1 5 0.3 10 40 4 2 2N5088 N TO-92A 350 50 30 300 900 0.1 5 0.5 10 50 4 3 2N5089 N TO-92A 350 50 25 400 1200 0.1 5 0.5 10 50 4 2 2N5133 N TO-106 200 50 18 60 1000 1 5 0.4 10 40 5 - #Hpp groupings .. Tags: 2n3860* to-92b 2N5133* 2N5133 datasheet abstract.. |
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