2N3904
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2N3904 - 2N3904
TO-92 Plastic-Encapsulate Transistors
2N3904
TRANSISTOR (NPN) TO-92
FEATURE silicon epitaxial planar transistor switching Amplifier applications complementary type, transistor 2N3906 Recommended This transistor also available SOT-23 case with type designation MMBT3904
EMITTER
BASE
COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol VCBO VCEO VEBO Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 0.625 -55-150 Units
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off Collector cut-off Emitter cut-off current current current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 current gain hFE2 hFE3 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time VCE(sat) VBE(sat) Test conditions 0.95 UNIT
IC=10A, IE=0 IB=0 10A, IC=0 VCB=60V, IE=0 VCE= 40V, IB=0 VEB= IC=0 VCE=1V, VCE=1V, VCE=1V, IC=10mA IC=50mA IC=100mA
IC=50mA, IB=5mA IC=50mA, IB=5mA VCE=20V,IC=10mA,f=100MHz VCC=3V,VBE=0.5V, IC=10mA,IB1=1mA VCC=3V, IC=10mA IB1=IB2=1mA
CLASSIFICATION
Rank Range
hFE1
100-200 200-300 300-400
Typical Characteristics
2N3904
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