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1 - 50 of about 53 for 150a gto |
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First line: 150a gto 72^21 00D5fl34 mPRX gMiMW R60S2515ES a^ifBIPI_R60F2515ES Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 FSSt R&COV&rV Powerex, Europe, S.A. Avenue Durand, BP107, 72003 Mans, France (43) 41.14.14 POIilEREX Thyristors Amperes/2500 Volts Powerex R60S251 Abstract: .. for GTO Thyristors 150 Amperes/2500 Volts Description: Powerex R60S2515ES and R60F2515ES .. a rated average current of 150A TC = 68 °C . Features: â–¡ Low On-state Voltage â–¡ Excellent .. Tags: 150a gto datasheet abstract.. |
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First line: 9097250 TOSHIBA (DISCRETE/OPTO) 02216 T-Z.<-0( THYRISTORS ^Hitchtssg 000221b PHASE CONTROL THYRISTORS P.48-P.81 Off-State Voltage Reverse Voltage 200V 300V 400V 600V 800V 1000V 1200 1300V O.IA SF0R1B42 SFORI SF0R1G42 0.3A SF0R3B42 SF0R3D42 SF0R3G42 SF0R3J42 SF1B12 SF1D12 SF1G12 1.7A S6146 Abstract: .. I o 1 i- - H E GATE TURN-OFF THYRISTORS GTO's > Peak Off-State Voltage 600 V 1300V 200A SG200J21 .. 51 e a OĂ– 600V 1300V 2500V 150A SHR150R22 300A SHR300J23 SHR300J26 400A SHR400R21 SHR400EX24 .. Tags: triac 1200V 50A SM6G14 S6192G SMOR5G42 SH5J12* datasheet abstract.. |
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First line: 250nH S-45 150a gto Abstract: .. maximum permissible link voltage as GTO snubber-diode. iF ≤ 150A Lσ ≤ 250nH snubberless. VR cr 3200 V. Charakteristische Werte / Characteristic values. Durchlaßspannung forward voltage. tvj = tvj .. Tags: 150a gto S-45 250nH gleichrichterdiode* datasheet abstract.. |
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First line: 150a gto Abstract: .. maximum permissible link voltage as GTO snubber-diode iF ≤ 150A Lσ ≤ 250nH snubberless VR cr 2500 V Charakteristische Werte / Characteristic values Durchlaßspannung forward voltage .. Tags: 150a gto gleichrichterdiode* D 901 S 45 T datasheet abstract.. |
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First line: 150a gto Marketing Information 35.45 max. Abstract: .. Höchstzulässige Kommutierungsspannung iF ≤ 150A VR cR 2500 V. als GTO Snubberdiode L0 ≤ 250nH. maximum permissible link voltage snubberless. as GTO snubber-diode. Charakteristische Werte / Characteristic .. Tags: 150a gto datasheet abstract.. |
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First line: 150a gto Abstract: .. maximum permissible link voltage as GTO snubber-diode. iF ≤ 150A Lσ ≤ 250nH snubberless. VR cr 3200 V. Charakteristische Werte / Characteristic values. Durchlaßspannung forward voltage. tvj = tvj .. Tags: 150a gto datasheet abstract.. |
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First line: 150a gto Abstract: .. maximum permissible link voltage as GTO snubber-diode iF ≤ 150A Lσ ≤ 250nH snubberless VR cr 2500 V Charakteristische Werte / Characteristic values Durchlaßspannung forward voltage .. Tags: 150a gto diode ir 0406 D 901 S 45 T datasheet abstract.. |
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First line: 150a gto Marketing Information center holes Abstract: .. Höchstzulässige Kommutierungsspannung iF ≤ 150A VR cR 3200 V. als GTO Snubberdiode L0 ≤ 250nH. maximum permissible link voltage snubberless. as GTO snubber-diode. Charakteristische Werte / Characteristic .. Tags: 150a gto 00365 r datasheet abstract.. |
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First line: 150a gto National DM54ALS5245/DM74ALS5245 Octal Transceivers This octal transceiver designed asynchronous two-way communication between data buses. inputs include hystersis which provides improved noise rejection. Data transmitted either from from depending logic level direction control (DIR) input. Abstract: .. C to + 70 °C Storage Temperature Range — 65 °C to +150 °C Recommended Operating Conditions .. From Input To Output AorBto BorA AorBto BorA Gto AorB Gto AorB Gto AorB Gto AorB .. Tags: 150a gto datasheet abstract.. |
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First line: 150a gto rjri National PRELIMINARY Semiconductor Corporation DM54ALS2645A/DM74ALS2645A Octal Transceivers This octal transceiver designed asynchronous communication between data buses. Data transmitted either from from depending logic level direction control (DIR) input. device disabled enable input Abstract: .. Control Inputs 7V I/O Ports 5.5V Storage Temperature Range — 65 °C to +150 °C ESD rating is to .. Aor B to BorA AorBto BorA Gto AorB Gto AorB Gto AorB Gto AorB. 1 1 1 1 1. 12 11 13 13 9 13. 1 1 1 1 1 1. 10 9.S 11.5 .. Tags: 150a gto datasheet abstract.. |
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First line: 150a gto GTO Driver National DM54ALS1645A/DM74ALS1645A Octal Transceivers This device contains eight pairs TRI-STATE logic elements configured octal transceivers. This device designed memory, microprocessor systems asynchronous bidirectional data buses. communication between buses controlled directi Abstract: .. 55 °C to +125 °C DM74ALS O-Cto+70'C Storage Temperature Range - 65 °C to +150 °C Recommended .. nput To Ou1put AorBto BorA AorBto BorA Gto AorB. DM54ALS1645A Min Max 15 15. DM74ALS1645A .. Tags: GTO Driver 150a gto datasheet abstract.. |
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First line: GTO thyristor driver GTO thyristor driver mto 150a gto mos Turn-off Thyristor MTo thyristor SDM170HK2 500A, 4500V 53mm MTOTM Thyristor Features 500A, 4500V Voltage Control Turn-Off Capability Power Gate Driver Package 75.2mm, 48.3mm, 27.2mm Abstract: .. 150A 200A 250A 300A 350A. Ik, Cathode Current A td off i, Turn-Off Delay Time us 115oC. 25oC .. GTO. 10Ω. 3μF G2 G1. 12Ω. 0.5μH. 6μF. 2000V. All diodes are standard low forward voltage drops. G2 G1. R2 .. Tags: mos Turn-off Thyristor 150a gto GTO thyristor driver mto GTO thyristor driver transistor PT 4500 THYRISTOR 300A MTO thyristor MOS Controlled Thyristor GTO thyristor Application notes GTO thyristor 4500V 500A GTO thyristor 100A, 2000V GTO thyristor Gate Turn-off Thyristor 100a 1000v thyristor SDM170HK2 |
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First line: S106 SCR GTO g400 scr C107 asymmetrical SCR SCR S106 Silicon Controlled Rectifiers (SCR's) offers basic families SCR's consisting more than different device types that have on-state current ratings surge-current ratings off-state voltage (VqroM) ratings Each family include several series types that Abstract: .. 8-50 S610 16 135 160 100 50-700 30 1.5 2 75 S649 16-35 115-140 125-150 » 65-80 25-600 80-150 2-3.7 .. modulators Gate-Tum-Off Types GTO's · Automotive ,applications · Motor controls · Other .. Tags: SCR S106 asymmetrical SCR scr C107 GTO g400 S106 SCR datasheet abstract.. |
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First line: 150a gto Abstract: .. maximum permissible link voltage as GTO snubber-diode. iF ≤ 150A Lσ ≤ 250nH snubberless. VR cr 3200 V. Charakteristische Werte / Characteristic values. Durchlaßspannung forward voltage. tvj = tvj .. Tags: 150a gto datasheet abstract.. |
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First line: 150a gto Abstract: .. maximum permissible link voltage as GTO snubber-diode. iF ≤ 150A Lσ ≤ 250nH snubberless. VR cr 3200 V. Charakteristische Werte / Characteristic values. Durchlaßspannung forward voltage. tvj = tvj .. Tags: 150a gto datasheet abstract.. |
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First line: 150a gto TGS 2600 DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 DS4414-4.1 February 2002 Abstract: .. The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a .. IT = 150A. IT = 300A. Fig.7 Maximum reverse recovery stored charge vs rate of fall of anode current .. Tags: 150a gto TGS 2600 TGS 200 DGT409BCA |
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First line: D1201A* 1N3253 N440B 150a gto 1N539 Product Matrix Horizontal-Deflection Circuits Product Matrix ITR's VERSAW 220AB Commutating (Retrace) Trace Commutating (Retrace) 't(rms) 'TSM 100A 100A 100A VnROMlVI Abstract: .. 45 VQTIVI 4 4 4 File No. 938 938 938 P RCA GTO's "•J to-3 M It dc 8.5a 8.5a 8.5a ltsm 60 Hz 50a 50a .. 150* « S 750 -30 to 150 1.4 4 0.5 3.14 25 D2103S 3 - 70 150 «* S 700 -30 to 150 1.4 4 0.5 3.14 25 D2101S 1 - .. Tags: 1N539 150a gto N440B 1N3253 D1201A* datasheet abstract.. |
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First line: RETS741AX* LM741 NON INVERTING AND INVERTING AMPLIFIER 150a gto NATL SEMICOND iLINEAR} 1,501124 National Semiconductor LM741/LM741A/LM741C/LM741E Operational Amplifier LM741 series general purpose operational amplifiers which feature improved performance over industry standards like LM709. They dir Abstract: .. €”55 °GtO + 125 °C 0'Cto +70 °C Storage Temperature Range —65 °Cto +150 °C —65 °Cto +150 °C —65 °Cto +150 °C -65'Cto +150tC Junction Temperature 150 .. Tags: 150a gto LM741 NON INVERTING AND INVERTING AMPLIFIER RETS741AX* datasheet abstract.. |
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First line: DGT409BCA* GTO gate drive unit 150a gto TGS 800 TGS 2600 DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 (LN25790) Abstract: .. The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a .. IT = 150A. IT = 300A. Fig.6 Maximum dependence of ITCM on CS Fig.7 Maximum reverse recovery energy .. Tags: TGS 800 150a gto DGT409BCA* TGS 2600 GTO gate drive unit DGT409BCA6565 current source inverter DGT409BCA |
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First line: 150a gto FASCO INDS/ SENISYS CLD41/CLD42 Series Silicon Planar Photodiodes OSENI BEEEiaB'T- t-U'^S high linearity dark current Abstract: .. FASCO INDS/ SENISYS 4QE D CLD41/CLD42 Series Silicon Planar Photodiodes 34S"ì73a 00012SÖ 7 .. Tags: 150a gto datasheet abstract.. |
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First line: EVM31-050A* 150a gto transistor 1BT EVM31-050A050A) POWER TRANSISTOR MODULE Krt/tt Including Free Wheeling Diode' hFE^au High Current Gain IfelIJfc Insulated Type Applications Power Switching Motor Controls i-^fflfll Motor Controls Abstract: .. -lc = 150A - 1.5 V fi m « 1« H $ hrE 1c= 150A, Vce = 5V 70 ■- -y^fâinttJŒ VcE Sal lc=150A. Ib = 4A 2.0 V ■ X .. ti;J<I:jit b Ii' ,to II 1:1' Gto, 'n't..: ~ Hl'ilf t 'I~j:"lil,\ll t '[ O WHMUlliJ,l; 1ii .. Tags: transistor 1BT 150a gto EVM31-050A* datasheet abstract.. |
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First line: 150a gto Abstract: .. maximum permissible link voltage as GTO snubber-diode iF ≤ 150A Lσ ≤ 250nH snubberless VR cr 2500 V Charakteristische Werte / Characteristic values Durchlaßspannung forward voltage .. Tags: 150a gto D 901 S 45 T datasheet abstract.. |
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First line: 150a gto Abstract: .. maximum permissible link voltage as GTO snubber-diode iF ≤ 150A Lσ ≤ 250nH snubberless VR cr 2500 V Charakteristische Werte / Characteristic values Durchlaßspannung forward voltage .. Tags: 150a gto datasheet abstract.. |
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First line: SKN* 150a gto SEMIKRCN fil3bb?l 000105=1 semikrdn t-03-2 1000 1200 1400 Ifrms (maximum values continuous operation) Ifav (sin. 180; Tease 2|IS Abstract: .. °C Tvj = 150 °C 1800 1500 A A ft Tvj = 25 °C Tvj = 150 °C 16 000 11000 A2s A2s Qrr -^=10îà ;Tvj = 150 .. stud Typical Applications • Inverse diodes for GTO and asymmetric thyristors • Inverters .. Tags: 150a gto SKN* datasheet abstract.. |
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First line: 150a gto 0003^55 seMIKRDn SEMIKRON Vrsm Vrrm Ifav (sin. 180; Tease 1200 1400 1600 1800 Abstract: .. 845000 A2s A2s Qrr TVj =150 °C;Ifm = 600A;-^ = 100^S 200 ^C I rm Tvj =150 °C; Ifm =600A;-aiF = 100p .. GTO and fast thyristors • Inverters and choppers • A. C. motor control • Uninterruptible .. Tags: 150a gto datasheet abstract.. |
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First line: 150a gto DISCRETE POWER DIODES THYRISTORS Abstract: .. 150A. FAST RECOVERY DIODES Stud Version. SD153N/R SERIES. Bulletin I2063/A. Features. High power .. Snubber diode for GTO High voltage free-wheeling diode. Fast recovery rectifier applications .. Tags: 150a gto datasheet abstract.. |
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First line: 600V igbt dc to dc buck converter SCR Inverter datasheet MOSFET welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER 200A Power Semiconductor Solutions FAST RECOVERY THREE-PHASE DIODE MODULES ASSEMBLIES IGBT ASSEMBLIES CUSTOM MODULES Abstract: .. : 20A TO 150A. VOLTAGE: 200V TO 6500V CURRENT: 30A TO 30000A. VOLTAGE: 300V TO 6500V CURRENT: 20A TO .. Diode GTO HVIGBT IGBT MOSFET SCR SiC Diode. Custom Modules. POWEREX 2009:Layout 1 12/31/08 9:19 .. Tags: MOSFET welding INVERTER 200A SCR Gate Drive 200v dc motor MOSFET welding INVERTER SCR Inverter datasheet 600V igbt dc to dc buck converter datasheet abstract.. |
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First line: 600V igbt dc to dc buck converter SCR Inverter datasheet INDUCTION HEATING mosfet MOSFET welding INVERTER 200A Global Power-Semiconductor Solution Provider Quick Reference Guide Abstract: .. VOLTAGE: 800V TO 1600V CURRENT: 20A TO 150A. POW-R-PAK. Applications Include: ● Energy Storage. ● .. ● GTO. ● S, C Diode. VOLTAGE: 30V TO 4500V CURRENT: 50A TO 1500A. CUSTOM MODULES. www.pwrx.com Call .. Tags: MOSFET welding INVERTER 200A INDUCTION HEATING mosfet SCR Inverter datasheet 600V igbt dc to dc buck converter MOSFET welding INVERTER datasheet abstract.. |
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First line: t600 scr 150a gto it900 GDGb571 |~T~2-5-19 Data Sheet PD-3.086 Ijqq Gate Hockey SCRs Major Ratings Characteristics 150pft200 150pft250 Units 'tgq Abstract: .. C, lT AV = 150A 471A peak , lG = 3A l|_ Typical latching current 20 A Tj = 25°C Ih Typical holding .. gate to the earliest instant at which the GTO may be retriggered. Tj = 125°C, It = 800A, dlG/dt = 50 .. Tags: it900 150a gto t600 scr datasheet abstract.. |
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First line: S6220D S6230* 150a gto Product Matrix (continued) SCR's TO-220AB Pre- fllU, Stud Isolated Stud <TIRMS) 12.5 lTSM 200A 200A 350A 200A 350A 200A 350A 200A Vrmnu VrromIVI 2N6400 N3668 2N6401 S6200A 2N3870 S6210A 2N3896 S6220A S6420A S6230A S6430A Abstract: .. 35A 20A 35A 16A 25A Pulse Modulator 35A FTO" 35A FTO* 35A lTSM 60 Hz 200A 350A 200A 350A 125A 150A .. Retrace Switch GTO's 8.5* 100-600 TO-3 G5001 High-, Medium, and Low- 8.5* 100-600 TO-3 G5002 .. Tags: 150a gto S6230* S6220D datasheet abstract.. |
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First line: RCA S28000 S28000* 2N4102 scr RCA S2800D S28000 Product Matrix (continued) SCR's TO-220AB Pre- fllU, Stud Isolated Stud <TIRMS) 12.5 lTSM 200A 200A 350A 200A 350A 200A 350A 200A Vrmnu VrromIVI 2N6400 N3668 2N6401 S6200A 2N3870 S6210A 2N3896 S6220A S6420A S6230A S6430A Abstract: .. 35A 20A 35A 16A 25A Pulse Modulator 35A FTO" 35A FTO* 35A lTSM 60 Hz 200A 350A 200A 350A 125A 150A .. Retrace Switch GTO's 8.5* 100-600 TO-3 G5001 High-, Medium, and Low- 8.5* 100-600 TO-3 G5002 .. Tags: S28000 scr RCA S2800D 2N4102 S28000* RCA S28000 datasheet abstract.. |
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First line: S6230* 2N6403 150a gto SCR 2N6397 Product Matrix (continued) SCR's TO-220AB Pre- fllU, Stud Isolated Stud <TIRMS) 12.5 lTSM 200A 200A 350A 200A 350A 200A 350A 200A Vrmnu VrromIVI 2N6400 N3668 2N6401 S6200A 2N3870 S6210A 2N3896 S6220A S6420A S6230A S6430A Abstract: .. 35A 20A 35A 16A 25A Pulse Modulator 35A FTO" 35A FTO* 35A lTSM 60 Hz 200A 350A 200A 350A 125A 150A .. Retrace Switch GTO's 8.5* 100-600 TO-3 G5001 High-, Medium, and Low- 8.5* 100-600 TO-3 G5002 .. Tags: SCR 2N6397 150a gto 2N6403 S6230* datasheet abstract.. |
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First line: 150a gto FGH75N60UF 600V, Field Stop IGBT FGH75N60UF 600V, Field Stop IGBT Abstract: .. 150A. 75A. IC = 40A. Common Emitter VGE = 15V. Collector-Emitter Voltage, V. CE [V] Collector .. Green FPS Green FPS e-Series GmaxTM GTO IntelliMAX ISOPLANAR MegaBuckTM MICROCOUPLER .. Tags: 150a gto fgh75n60uftu FGH75N60UF FGH75N60UF |
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First line: 150a gto TGS 2600 DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 DS4414-4.1 February 2002 Abstract: .. The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a .. IT = 150A. IT = 300A. Fig.7 Maximum reverse recovery stored charge vs rate of fall of anode current .. Tags: 150a gto THYRISTOR 300A TGS 2600 DGT409BCA |
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First line: igbt welding machine scheme PR001* GTO hvdc thyristor inverter, water cooling system 20kV thyristor Power Electronic Assembly Products Electro/Mechanical Thermal Components Standard Power Assemblies Traction Refurbishment Abstract: .. , fast turn-off thyristors, GTO thyristors and custom heatsink power assemblies. All Dynex .. These AC controllers are available from 150A Irms continuous in an air cooled assembly up to .. Tags: 20kV thyristor PR001* thyristor drive dc motor speed control 380v Thyratron* Silicon Power Cube renault inverter, water cooling system Ignitron* igbt welding machine scheme GTO hvdc thyristor GEC Plessey GTO bridge rectifier cube aei thyristors gec datasheet abstract.. |
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First line: N440B 150a gto 1N539 Product Matrix Horizontal-Deflection Circuits Product Matrix ITR's VERSAW 220AB Commutating (Retrace) Trace Commutating (Retrace) 't(rms) 'TSM 100A 100A 100A VnROMlVI Abstract: .. 1TR Product Matrix For Horizontal-Deflection Circuits GTO Product Matrix RCA ITR's * F VERSAW .. to 150 1.4 4 0.5 3.14 25 D2103S 3 - 70 150 «* S 700 -30 to 150 1.4 4 0.5 3.14 25 D2101S 1 - 30 45 S 700 -30 to .. Tags: 1N539 150a gto N440B datasheet abstract.. |
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First line: QS 100 NPN Transistor 150a gto KSC5603D Silicon Transistor, Planar Silicon Transistor February 2010 KSC5603D Silicon Transistor, Planar Silicon Transistor Abstract: .. IB1=50mA, IB2=150A, VCC=125V, RL = 416Ω. TA=25° C 400 600 ns. TA=125° C ns. tSTG Storage Time TA=25 .. Green FPS• Green FPS• e-Series• Gmax• GTO• IntelliMAX• ISOPLANAR• MegaBuck• MICROCOUPLER .. Tags: 150a gto QS 100 NPN Transistor KSC5603D |
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First line: skiip 85 UPS 06 SCR GTO die SEM 2005 16 PINS ic sem 2005 sem 2005 inverter High Heat Flux Applications Power Electronics Scott Leslie Chief Technologist Powerex Youngwood High Heat Flux Applications Power Electronics 2005 Abstract: .. Diode / SCR / IGCT Diode / SCR / GTO / IGBT / MOSFET / BJT. High Heat Flux Applications in Power .. 600V 150A Servo Motor Controller IPM. On chip current & temperature sensing along with advanced .. Tags: sem 2005 inverter ic sem 2005 SEM 2005 16 PINS SCR GTO die skiip 85 UPS 06 datasheet abstract.. |
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First line: 100a 1000v GTO 150a gto fllBbb?! DGDBTMB seMIKROn SEMIKRON Vrsm Vrrm Ifav (sin. 180;Toase 1000 1200 1400 1600 1800 SKN340 Abstract: .. ms Tvj = 150 °C 10 ms 80 000 61 250 125 000 101 250 A2s A2s Qrr Tvj = 150 °C; Ifm = 300A; 165 55 HC I rm Tvj .. Inverse diodes for GTO and asymmetric thyristors · Inverters and choppers · A. C. motor control .. Tags: 150a gto 100a 1000v GTO datasheet abstract.. |
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First line: IGBT parallel rsn 311 RCD snubber IGBT snubber calculation of IGBT snubber Snubber Considerations IGBT Applications Zhang, Saed Sobhani, Rahul Chokhawala International Rectifier Corporation Applications Engineering Kansas St., Segundo, 90245 Abstract: Snubber circuits used protect fast switching IGB Abstract: .. causcd turn-on losses at 150A to increase from 9mJ to 16mJ. At impact of this additional current .. as for snubber capacitors required for GTO thyristors! , making the RCD scheme unattractive .. Tags: calculation of IGBT snubber IGBT snubber RCD snubber rsn 311 IGBT parallel datasheet abstract.. |
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First line: 150a gto Zytrex ZX54AHCT ZX74AHCT February 198S OBJECTIVE Designed specifically high-speed memory decoders data transmission systems Incorporates enable Inputs simplify cascading and/or data reception Abstract: .. -65 °C to + 150 °C Power Dissipation Per Package, Pot..500 mW •Absolute Maximum .. Maximum Propagation Delay, AorBtoanyY Maximum Propagation Delay, Gto anyY Maximum Input .. Tags: 150a gto datasheet abstract.. |
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First line: 150a gto STD150NH02L STD150NH02L-1 N-CHANNEL 0.003 150A ClipPAKTM/IPAK STripFETTM MOSFET DC-DC CONVERSION PRELIMINARY DATA TYPE STD150NH02L STD150NH02L-1 Abstract: .. .003Ω - 150A - ClipPAKTM/IPAK STripFETTM III MOSFET FOR DC-DC CONVERSION. ■ TYPICAL RDS on = 0 .. Tags: 150a gto D150Nh02l* D150N* d150* STD150NH02L STD150NH02L-1 |
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First line: intel 2148H 150a gto irrteT 2149 1024 4-BIT STATIC 2149H-2 2149H-3 2149H 2149HL-3 2149HL Max. Address Access Time (ns) Max. Chip Select Access Time (ns) Max. Active Current (mA) Fast Chip Select Access Maximum HMOS Technology Abstract: .. -65 °Gto + 150 °C Voltage on Any Pin with Respect to Ground..- 3.5V to + 7V D.C. Continuous Output Current ..20 mA Power Dissipation.. .. Tags: 150a gto intel 2148H datasheet abstract.. |
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First line: 150a gto SD153N/R SERIES FAST RECOVERY DIODES Features High power FAST recovery diode series recovery time High voltage ratings 1600V High current capability Optimized turn turn characteristics forward recovery Fast soft reverse recovery Compression bonded encapsulation Stud version JEDEC DO-30 Maxi Abstract: .. 150A. FAST RECOVERY DIODES Stud Version. SD153N/R SERIES. 1. Bulletin I2063 rev. A 09/94. www.irf .. Typical Applications Snubber diode for GTO. High voltage free-wheeling diode Fast recovery .. Tags: 150a gto SD153N R |
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First line: LM312D* 150a gto LMT1Z, LMZ1Z, LM312 OPERATIONAL AMPLIFIERS/BUFFERS D3304, AUGUST 1989 Input Bias Current Over Full Temperature Range LM112, LM212 Input Offset Current Over Abstract: .. ~40 °Gto 105 °C LM312 .. -65 °C to 150 °C Lead temperature 1,6 mm 1/16 inch .. Tags: 150a gto LM312D* datasheet abstract.. |
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First line: 150a gto 2DI75M-050(75A> Outline Drawings POWER TRANSISTOR MODULE Features High Current Gain High Speed Switching Applications General Purpose Inverter Uninterruptible Power Supply Abstract: .. -di/dt = 150A///s 0.6 M s • a&fäföü : Thermal Characteristics : Items Symbols Test Conditions .. , 1/ I:~' Gto L ,;j'" i5 jJl'o'! b 'IiI ::Utill! I: '1: O IU.i'kIV'I!I,U limT: "'i~ ~ t 0 '1:'1;1 .. Tags: 150a gto datasheet abstract.. |
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First line: LNVMT* 7MB150N-120* LNVMT 7MB150N-120 LNVMT 1 Features High Speed Switching Voltage Drive Inductance Module Structure Dynamic Brake Circuit Applications >'<-9 Inverter Servo Drive Amplifier Uninterruptible Power Supply Abstract: .. 1.5 V tf 0.5 mmmi trr If=50A, VGe=-10V, — di/dt = 150A///s 350 ns Ices Vces=1200V, vGE = ov 1.0 mA .. !J,lj"'1'lil~ vr <10 ~ 1', *ilm:& it Il ro,T<I:ttbt, \ ,to ID 1:1, Gto p~.;'j; '.i 111i'-i t '~I .. Tags: LNVMT 1 7MB150N-120 LNVMT 7MB150N-120* LNVMT* datasheet abstract.. |
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First line: 150a gto Symbols Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode Thyristor Chips Planar Design Abstract: .. Power switches IGBT, MOSFET, BJT, GTO for applications in electronics are only as good as .. DWS 1-150A. 2857. 2.40. 2.40. DWS 11-150A. 1515. 3.25. 3.25. DWS 21-150A. 757. 4.45. 4.45. DWS 31-150A. 515. 5 .. Tags: 150a gto thyristor control arc welding rectifier circuit fast thyristor 200A gate control circuits fast thyristor 200A Discrete Thyristor Chip Depletion MOSFET datasheet abstract.. |
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First line: IXFN60N80* IXTD5N50P-23 IXED15N120 IXFD64N50P-9J* DWHP16-06 www.ixys.com Symbols Definitions Nomenclature General Informations Chips Assembly Instructions FRED, Rectifier Diode Thyristor Chips Planar Design Page IGBT Chips Abstract: .. Power switches IGBT, MOSFET, BJT, GTO for applications in electronics are only as good as .. DWS1-150A 2.5 125 175 30 1.7 0.81 0.66 10 120 3 tbd 10 200. DWS11-150A 5 125 175 43 1.4 0.81 0.66 20 200 .. Tags: DWHP16-06 IXFD64N50P-9J* IXED15N120 IXTD5N50P-23 IXFN60N80* datasheet abstract.. |
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First line: onduleur ac Inverter schematics 10 kw stanag-3456* stanag 3456 stanag-3456 APT9601 Serge Bontemps Phillipe Cussac Henry Foch Denis Grafham HIGH FREQUENCY RESONANT HALF BRIDGE MOS-Gated Power Semiconductors Configured Thyristor-Dual Mode Yield Converter Efficiency 1-10 When Resonantly Switched 20-400 Abstract: .. switch that can be turned off BJT, MOSFET, IGBT, GTO or MCT in antiparallel with a diode D and a .. Product is available in 75A and 150A versions, both housed in standard LP8-outline packages .. Tags: stanag-3456* ac Inverter schematics 10 kw onduleur zvt boost converter variateur de vitesse reversible thyristor inverter stanag-3456 stanag 3456 sinewave inverter SCR PNPN VRMS 400 scr inverter schematic circuit SCR GTO SCR 60A 500V schematic diagram UPS inverter three phase APT9601 |
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