| Fulltext Datasheet Results |
1 - 50 of about 10000+ for 125 let |
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First line: cock* SAMSUNG Cross Reference UT8Q512K8* 7E-10 UT8Q512K8 Single Event Effects Qualification UT8Q512K8 (RQ02) 6ZVL04 4Mbit SRAM 7/21/03 Craig Hafer 719-594-8319 craig.hafer@aeroflex.com SUMMARY--Single event effects qualification testing performed UTMC 4Mbit SRAM, (Samsung die), 6ZVL04, Lawrence Berk Abstract: .. latchup SEL from ions with a linear energy transfer LET of >84 MeV-cm2/mg when tested at 125°C and 3.6V Vdd considered worst-case conditions for SEL . SEL was observed at an LET of 100 MeV-cm2 .. Tags: UT8Q512K8 7E-10 UT8Q512K8* SAMSUNG Cross Reference cock* UT8Q512K8 |
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First line: 125 let IS-139ASRH IS139ASRH Single Event Testing IS-139ASRH Quad Comparator Introduction intense heavy environment encountered space applications cause variety transient destructive effects analog circuits, including single-event latchup (SEL), single-event upset (SEU) single-event burnout (SEB). T Abstract: .. incidence from perpendicular, equivalent to an effective LET of 181.8, as compared to testing .. 125 27. 30 270 279 150 131 51. 6. Table 3: Minimum Input Offset Voltage mV for No Output transients .. Tags: IS139ASRH IS-139ASRH 125 let LM139 |
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First line: IS705RH IS-705RH* Single Event Testing IS-705RH Microprocessor Supervisory Circuit Introduction intense heavy environment encountered space applications cause variety transient destructive effects analog circuits, including single-event latchup (SEL), single-event transient (SET) single-event breakd Abstract: .. LET=27 MeV/mg/cm2 than with Kr at LET=38 MeV/mg/cm2. With Ar ions at LET=17.5 MeV/mg/cm2 we saw .. 0 o 125 6 1.4x107 236 1.69x10-5. Table 2: Reset HLH transients using Au ions at various angles and .. Tags: IS-705RH* IS705RH IS705RH |
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First line: bussmann semiconductor fuse 1800 amp 160A fuse data sheet 180LETa 160A fuse data sheet BS-88 High Speed Fuses British fuses High Speed Fuses Abstract: .. to provide: • Minimal energy let-through I2t • Excellent DC performance • Good surge .. 125LET 125 600 3800 7500 16.0. 160LET 160 1100 7000 16000 20.0. 180LETa 180 1600 12000 29000 21.0 .. Tags: BS-88 160A fuse data sheet 180LETa 160A fuse data sheet bussmann semiconductor fuse 1800 amp datasheet abstract.. |
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First line: Radiation Tolerant SRAM Space Applications Abstract Total ionizing dose heavy single event effects data presented radiation tolerant 100ns SRAM (UT7Q512). SRAM shown resistant between 35krad(Si) total dose radiation (depending particular examined) relatively high dose rate 46rad(Si)/s. SRAM immune s Abstract: .. test 125 ×C and 5.5V Vdd . Figure 2 is a plot of the cross-section versus LET for the data shown in Table 3. This figure shows an onset of upset at less than. 2.8 MeV·cm2/mg the smallest LET available .. Tags: Co-60 |
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First line: Evaluation Report SCMOS1/2 Radiation Tolerant Technology FIFO Family 72Kbit) Tolerance Radiation Thierry CORBIERE Abstract: .. /40/50 ns Wide temperature range : ‐55 °C to +125 °C Very low Stand-by current 200μA Battery .. The two controls are repeated for any LET Linear Energy Transfer of interest. Evaluation .. Tags: LINEAR Cross Reference Search cross reference 35CL datasheet abstract.. |
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First line: SCMOS1/2 SCMOS1/2 Technology FIFO Family 72Kbit) Tolerance Radiation Abstract This paper proposes review data gathered during heavy testing First First manufactured using Radiation Tolerant version 0.85µm SCMOS1/2 technology. Both Upset sensitivity Total Dose tolerance assessed 5.0V typical po Abstract: .. /40/50 ns Wide temperature range : -55 ΥC to +125 ΥC Very low Stand‐by current 200μA Battery .. Note that Cosine law is used to vary LET of the particle LETeff = LET/Cos @ with @=angle from .. Tags: technics matra LINEAR Cross Reference Search 9439 35CL datasheet abstract.. |
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First line: 92E-09 Single Event Upset Design Techniques UTMC's RadHard Logic Family Overview Single Event Upset (SEU) result transitioning through semiconductor structure depositing charge critical circuit node within that structure. CMOS logic circuit, deposited charge switch logic state sequential combinatori Abstract: .. cell exhibited fluctuation around its LET threshold. No upsets were recorded below 80 MeV-cm2 .. 125.0 1.38E-06. 120.0 2.92E-09 1.60E-06. 120.0 2.83E-09. 115.0 1.16E-06. 110.0 1.51E-06. 100.0 5 .. Tags: 92E-09 datasheet abstract.. |
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First line: Actel pdf on sram fpga radiation COTS fpga radiation Radiation Test Results Virtex FPGA SRAM Space Based Reconfigurable Computing Earl Fuller2, Phil Blain, Michael Caffrey, Carl Carmichael3, Noor Khalsa, Anthony Salazar Alamos National Laboratory Novus Technologies, Inc. Xilinx, Inc. availability Vi Abstract: .. However, the Virtex FPGA was immune to single event latch-up up to an LET of 125 MeV-cm2/mg. Detailed single event upset testing was then done in both static as well as dynamic operating conditions .. Tags: fpga radiation fpga radiation COTS Actel pdf on sram APPLIED SOLAR ENERGY datasheet abstract.. |
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First line: SCMOS2 Technology Dual Port 8K16 Tolerance Radiation Abstract This paper proposes review data gathered during radiation testing 8Kx16 dual port manufactured using Radiation Tolerant version 0.6µm SCMOS2/2 technology. Both Upset sensitivity Total Dose tolerance assessed 5.0V typical power suppl Abstract: .. Fast access time : 35/45/55 ns Wide temperature range : -55 C to +125 C Very low Stand‐by current .. The two controls are repeated for any LET Linear Energy Transfer of interest. Figure 1. Test .. Tags: datasheet abstract.. |
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First line: Evaluation Report SCMOS2 Radiation Tolerant Technology Dual Port 8Kx16 Tolerance Radiation Thierry CORBIERE Abstract: .. Latch-up immunity is verified at maximum LET of 123 MeV mg/cm≤ . Introduction Introduction .. Fast access time : 35/45/55 ns Wide temperature range : ‐55 °C to +125 °C Very low Stand-by .. Tags: datasheet abstract.. |
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First line: JIS-K-8101 marking c8 marking c8 transistor Specification FM7500SG2-0001 <Chip Monolithic Ceramic Capacitor> Murata Global GRM32ER61C226KE20L (1210,X5R,22uF,16V) Abstract: .. R7 -55°C to +125°C 25°C Within ±15% F5 -30°C to +85°C 25°C Within+22/-82% C7 -55°C to +125°C 25° .. Let sit at room temperature for 48 ± 4 hours, then measure. ·Initial measurement Perform a heat .. Tags: marking c8 transistor JIS-K-8101 MARKING CODE f5 marking c8 capacitor 476 10V GRM32ER61C226KE20L |
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First line: AcceptAnce cone UV diode 100 nm to 280 nm FVP100110125 FVP600660710 FVP100110125* Fibers SILICA/SILICA Optical Fiber High Enhanced Characteristics Abstract: .. FVP100110125* 100 ± 7 110 ± 5 125 ± 5. FVP150165195 150 ± 7 165 ± 5 195 ± 5. FVP200220240 200 ± 8 220 ± 5 .. Please let us know what we can do to help satisfy your project requirements. Typical .. Tags: FVP100110125* FVP600660710 UV diode 100 nm to 280 nm AcceptAnce cone UV diode 320 nm FVP100120140* FVP100110125 180NM datasheet abstract.. |
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First line: IEC-512-3* Winchester IEC-512-3 aila Introducing Power Connectors Abstract: .. at sea level Operating Temperature Range: -55°C to +125°C. MECHANICAL CHARACTERISTICS Max .. Let us engineer your next connector solution! Winchester Electronics December 2001 .. Tags: IEC-512-3 IEC-512-3* Winchester Electronics Winchester UL 741 datasheet abstract.. |
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First line: Iec384-14 Iec384-14* GHM3045X7R102K-GC* 1.0 SN capacitor GHM3045 SURFACE MOUNT MONOLITHIC CHIP CAPACITORS CERAMIC CHIP CAPACITORS GHM2000/3000 Series SAFETY STANDARD APPROVED-250VAC GHM2143/2243 safety approved. Made standards electrical appliance material control Japan, separated table Rated voltag Abstract: .. The range of capacitance change compared with the 20°C value within ‐25 to +85°C ‐55 to +125°C .. and then let sit for 24 ± 2 h at room condition. As in figure below, discharge is made 50 times at 5 s .. Tags: 1.0 SN capacitor GHM3045X7R102K-GC* Iec384-14* transistor sit Iec384-14 iec384 GHM3045X7R102K-GC GHM3045* GHM2243B102M* GHM2145* GHM2143B103MAC250 GHM2143 en132400 capacitance GC GHM2000 3000 GHM2143 2243 GHM2243 GHM2143 GHM3045 IEC384-14 GHM3145 |
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First line: lm567 schematic diagram Airpax 6 wire stepper motor ultrasonic range meter IC LM567 NE567 application note LM567 application note User-Interface Terminal BASIC Stamp Application Notes Introduction. This application note presents program PBASIC that enables BASIC Stamp operate simple user-interface Abstract: .. wr_LCD: let pins = pins & %00010000 let b2 = char/16 ' Put high nibble of b3 into b2. let pins = pins .. 1 ¥‐‐‐‐ 01111101 125. 2 ¥¥‐‐‐ 00111101 61. 3 ¥¥¥‐‐ 00011101 29. 4 ¥¥¥¥‐ 00001101 13. 5 ¥¥¥¥¥ 00000101 5 .. Tags: LM567 application note NE567 application note Airpax 6 wire stepper motor lm567 schematic diagram working of ultrasonic transmitter voltage to frequency converter using ic 555 timer vibrating sensor alarm unipolar stepper motor 12 vdc 7,5 deg Unipolar motor control using regular Ultrasonic Transducer application notes ultrasonic transducer 40khz ultrasonic sensor 40khz sensor ultrasonic sensor 40khz pic ultrasonic sensor 40khz ultrasonic range meter IC LM567 datasheet abstract.. |
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First line: 125 let Single Event Effects Testing Xilinx FPGAs Gary Lockheed Martin, Sunnyvale, Glen Vandenboom Xilinx, Inc. Jose, Advanced Field Programmable Gate Arrays (FPGAs) operating 3.3V were tested single event effects (SEE) using Tandem Graaff accelerator Single Event Effects Facility Brookhaven Nationa Abstract: .. The accelerator has the capability of accelerating helium to gold ions such that a LET range of .. an elevated temperature of 125°C to provide the worst case condition for latchup. The XQR parts .. Tags: 125 let 9945 A transistor XQR4036XL |
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First line: 27oC Single Event Testing IS-1715ARH Complementary Driver Introduction intense heavy environment encountered space applications cause variety transient destructive effects analog circuits, including single-event latchup (SEL), single-event transient (SET) single-event burnout (SEB). These effects le Abstract: .. recorded using Au ions, the minimum LET number can be established at 90MeV/mg/cm2 - which again .. 7 HIGH LOW LOW NO HIGH NO 2.74 2.73 Temp=125. oC, VCC=10V - No glitches. HIGH HIGH HIGH NO LOW NO 3.45 3 .. Tags: 27oC IS-1715ARH |
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First line: SCMOS2 SCMOS2 Technology MG1RT Gates Family Tolerance Radiation Abstract This paper proposes review data gathered during radiation testing MG1RT gates family manufactured using Radiation Tolerant version metal layers 0.6µm SCMOS2/2 technology. Both Upset sensitivity Total Dose tolerance assess Abstract: .. ΥC to +125 ΥC Very low Stand‐by current 0.3nA/cell typ. Standard 12mA I/Os, parallelism up to .. for any LET Linear Energy Transfer of interest. Figure 1. Test Flow used during the heavy ions .. Tags: Dose MG1RT |
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First line: Evaluation Report SCMOS2 Radiation Tolerant Technology MG1RT Gates Family Tolerance Radiation Thierry CORBIERE Abstract: .. Latch-up immunity is verified at maximum LET of 165 MeV mg/cm≤ . Introduction Introduction .. mm≤ 250pS typical gate delay 350MHz toggle frequency Wide temperature range : -55 °C to +125 °C .. Tags: EHR96135 MG1RT |
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First line: TTF-11* URD 44 TTF 9URD73TTF1250 17 urd URD 44 SQUARE BODY 1250/1300 Volt SEMICONDUCTOR PROTECTION FUSES Ferraz Shawmut 1250/1300V fuse-links provide maximum flexibility equipment design ultimate protection today's power conversion equipment. These square body fuse-links available four different bod Abstract: .. 125 1300 1.3 11 38 A130URD70LI0125 A130URD70TTI0125. 70 160 1300 2.5 22 45 A130URD70LI0160 .. Peak Let-Thru Current Data. Max Peak Let Thru Current Data. Available Current in RMS Symmetrical .. Tags: URD 44 17 urd 9URD73TTF1250 URD 44 TTF TTF-11* datasheet abstract.. |
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First line: A150X SEMICONDUCTOR PROTECTION FUSES A150X Amp-trap® Form Semiconductor Protection fuses, rated 1000A, 1500VAC suitable Traction drive auxiliary circuits High Voltage Heavy duty rectifier applications. A150X fuses suitable 1500VDC circuits depending time constant. Abstract: .. 15 A150X15-4 2 125 A150X125-4 2. 20 A150X20-1 1 150 A150X150-4 2. 20 A150X20-4 2 175 A150X175-4 2. 25 .. Peak Let-Thru Data ‐ A150X15 to 1000, 1500 VAC. AMP-TRAP®‐Form 101. A150X SEMICONDUCTOR .. Tags: Ferraz Shawmut Ferraz A150X1-1* A150X100-4 3213 A150X |
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First line: FSPYC164R4 FSPYC164R, FSPYC164F 4936 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 70A - - 1.61 V. Drain to .. Tags: FSPYC164R4 FSPYC164R FSPYC164F |
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First line: FSPS230R, FSPS230F 4866 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 14A - - 2.17 V. Drain to .. Tags: FSPS230R FSPS230F |
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First line: ms 6100 FSPYC264R, FSPYC264F ©2001 Fairchild Semiconductor Corporation Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 45A - - 2.21 V. Drain to .. Tags: ms 6100 FSPYC264R FSPYC264F |
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First line: FSPYC260R, FSPYC260F 4850.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETS have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 58A - - 1.91 V. Drain to .. Tags: FSPYC260R FSPYC260F |
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First line: FSPS234R, FSPS234F 4877 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 11A - - 2.53 V. Drain to .. Tags: FSPS234R FSPS234F |
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First line: C 4927 FSPS130R, FSPS130F 4927 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 16A - - 0.784 V. Drain to .. Tags: C 4927 FSPS130R FSPS130F |
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First line: FSPYE230R, FSPYE230F 4852.2 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETS have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 12A - - 1.74 V. Drain to .. Tags: FSPYE230R FSPYE230F |
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First line: FSPYE234R, FSPYE234F 4873 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 9A - - 1.98 V. Drain to .. Tags: FSPYE234R FSPYE234F |
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First line: relay 1A 125VAC 1A 30VDC diagram of vending machine Subminiature Power Relay HG4503 contact capacity Subminiature design Form Form contact form Sealed dust cover version choice approved Abstract: .. 45 125 180 400 720 1600 2800. 2.25 3.75 4.50 6.75 9.00 13.50 18.00. 0.15 0.25 0.30 0.45 0.60 0.90 1.20 .. Please let us know your special requirements. 3. Specifications subject to change without .. Tags: diagram of vending machine relay 1A 125VAC 1A 30VDC HG4503 |
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First line: FIP100110125 Phoenix Technologies FIP050070085 Polymicro Technologies FIP100110125* Fibers SILICA/SILICA Optical Fiber Ultra Abstract: .. FIP100110125* 100 ± 7 110 ± 5 125 ± 5. FIP150165195 150 ± 7 165 ± 5 195 ± 5. FIP200220240 200 ± 8 220 ± 5 240 .. Please let us know what we can do to help satisfy your project requirements. Typical .. Tags: FIP100110125* Polymicro Technologies FIP050070085 Phoenix Technologies FIP100110125 datasheet abstract.. |
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First line: FSPL234R, FSPL234F 4881 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 7A - - 1.75 V. Drain to .. Tags: FSPL234R FSPL234F |
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First line: SMD.5 FSGYE130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bdin isCha STs) erpoon, mitor, diadd, isCha Abstract: .. to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 20A - - 0.980 V. Drain to .. Tags: SMD.5 FSGYE130R |
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First line: FSPJ160R, FSPJ160F 4916 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 o C - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 70A - - 0.805 V. Drain to .. Tags: FSPJ160R FSPJ160F |
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First line: FSPJ164R, FSPJ164F 4934 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 68A - - 1.632 V. Drain to .. Tags: FSPJ164R FSPJ164F |
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First line: LSE B3 LSE B3 transformer datasheet LSE B6 transformer LSE B3 transformer how to test LSE B3 transformer FSPJ260R, FSPJ260F 4879 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 55A - - 1.87 V. Drain to .. Tags: LSE B3 transformer how to test LSE B6 transformer LSE B4 transformer LSE B3 transformer FSPJ260R FSPJ260F |
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First line: FSGYE134R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bjec eato Abstract: .. to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 20A - - 1.96 V. Drain to .. Tags: FSGYE134R |
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First line: i/DM-48* FSPL130R, FSPL130F 4928 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 12A - - 0.912 V. Drain to .. Tags: i/DM-48*Â DM-48 FSPL130R FSPL130F |
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First line: FSGYE234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bdin isCha STs) poon, mitor, diadd, isCha Abstract: .. to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 9A - - 2.07 V. Drain to .. Tags: FSGYE234R |
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First line: GAS ARRESTOR Product Specification PTRONxONFxxS Discharge Tube Lightning Arrestor Connectors Replaceable Protective Element Features: Frequency Excellent Performance Multiple Strike Capability Surge Protection Bi-directional Protection Rugged Waterproof High Power Specifications Abstract: .. è Let-through: See Protection Voltage table. è Replaceable Gas Discharge Tube 90V to 1000V .. Mechanical Specifications è Weight 0.28 pounds typ/125 g typ. Environmental Specifications .. Tags: GAS ARRESTOR SURGE ARRESTOR datasheet abstract.. |
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First line: GNM214 Specifications Item Temperature Compensating Type +5°C Test Method High Dielectric Type +5°C +85°C rated voltage defined maximum voltage which applied continuously capacitor. When voltage superimposed voltage, VP-P VO-P, whichever larger, should maintained within rated voltage ran Abstract: .. 5C : ‐55 to +125°C R7 : ‐55 to +125°C R6 : ‐30 to +85°C. Operating Temperature Range. Rated Voltage .. Let sit at room temperature for 24T2 hours temperature compensating type or 48T4 hours .. Tags: GNM214 datasheet abstract.. |
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First line: FSPYE134R, FSPYE134F Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bjec eato Abstract: .. capability at full rated voltage up to an LET of 37. Star*Power Gold FETs have been optimized for .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 20A - - 1.86 V. Drain to .. Tags: FSPYE134R FSPYE134F |
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First line: FSGYE035R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bjec eato Abstract: .. to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This .. TC = 125 oC - - 200 nA. Drain to Source On-State Voltage VDS ON VGS = 12V, ID = 20A - - 0.600 V. Drain to .. Tags: FSGYE035R |
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First line: dual element Time-Delay fuse POWR-PRO® Fuses LLSRK_ID Series Indicator® POWR-PRO® Class Fuses Dual-Element, Time-Delay 1/10 Amperes Abstract: .. 3 ⁄10 16⁄10 4 10 45 125 450. 4 ⁄10 18⁄10 41⁄2 12 50 150 500. 1 ⁄2 2 5 15 60 175 600. 6 ⁄10 21⁄4 56⁄10 171⁄2 70 .. * Prospective RMS Symmetrical Amperes Short-Circuit Current Note: Data derived from Peak Let .. Tags: dual element Time-Delay fuse spring fuse fuse 8A fuse 1.6a 1.6A fuse datasheet abstract.. |
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First line: ic p35 ic "p35" M52722SP 3-CHANNEL VIDEO PREAMPLIFIER PROVIDED WITH RETRACE LINE HIGH-RESOLUTION DESCRIPTION M52722SP video amplifier provided with mixing function, semiconductor having three channels built-in wideband 180MHz amplifier. Each channel functions blanking, mixing, retrace line blanking, Abstract: .. and let the reading be VOR2 VOG2 or VOB2 . 3. Contrast control characteristics VCR1 and .. 125. 2016. 0. POWER DISSIPATION Pd mW 2000. 1600. 1200. 25 50 85 100. When mounted with standard .. Tags: ic "p35" ic p35 OSD 2000 M52722SP |
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First line: IRF 949 PD-94342D RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) Part Number Radiation Level IRHNA67260 100K Rads (Si) IRHNA63260 300K Rads (Si) RDS(on) 0.028 0.028 Abstract: .. and have been characterized for useful performance with Linear Energy Transfer LET up to .. VGS = 0V, TJ = 125°C. IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V. IGSS Gate-to-Source .. Tags: IRF 949 9434* datasheet abstract.. |
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First line: smd transistor ab2 pdf smd transistor ab2 w32 smd transistor smd transistor L33 w32 smd transistor 143 QPro Virtex 2.5V adiation Hardened FPGAs Abstract: .. Latch-up immune to LET = 125 MeV cm2/mg. SEU immunity achievable with recommended redundancy implementation. Guaranteed over the full military temperature range –55°C to +125°C Fast, high-density .. Tags: smd transistor ab2 pdf XQVR600-4CB228V* XQVR600 XQVR300-4CB228M w32 smd transistor 143 w32 smd transistor smd transistor w32 smd transistor L33 smd transistor E23 smd transistor ab2 SMD l33 Transistor QPro Virtex 2.5V Radiation Hardened FPGAs datasheet abstract.. |
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First line: V300214* A070URD30KI0125 100 amp 1000 volt GTO A070URD33LI0700 E300269* SQUARE BODY 690/700 Volt SEMICONDUCTOR PROTECTION FUSES Ferraz Shawmut 690/700V fuse-links provide maximum flexibility equipment design ultimate protection today's power conversion equipment. These square body fuse-links availab Abstract: .. 900 660 170 900 110/125 6,6URD32D11A0900 6,6URD32D08A0900 6,6URD32EF0900 6,6URD32TTF0900 .. Melting Time ‐ Current Data Peak Let-Thru Current Data. A070 URD 31 & 6,9 URD 31 200 to 700A. Melting .. Tags: E300269* A070URD33LI0700 100 amp 1000 volt GTO A070URD30KI0125 V300214* datasheet abstract.. |
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First line: colour tv circuit diagram Ordering number EN*5440 LC89950 Delay Line Systems Abstract: .. +125 °C. Specifications Absolute Maximum Ratings at Ta = 25°C. Allowable Operating Ranges at Ta .. 3. Let VOUT be the OUT pin signal amplitude when a 200-kHz 350-mVp-p sine wave is input. Then .. Tags: colour tv circuit diagram LC89950* AD842* LC89950 |
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