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First line: igbt transient Amp. mosfet 1000 watt IGBT 50 amp 1000 volt 12 VOLT 10 AMP smps ultrafast igbt Hard-Switched Silicon IGBTs? Switching Losses Half with Silicon Carbide Schottky Diodes Richmond Replacing Ultrafast soft-recovery diode used freewheeling component hard-switched IGBT applications with Sili Abstract: .. of a bipolar transistor and the ease of control of a MOSFET, has become the power switch of choice .. available with 600-volt and 1200-volt ratings. The 600-volt diodes are available with 1-, 4- .. Tags: 12 VOLT 10 AMP smps IGBT 50 amp 1000 volt igbt transient ultrafast igbt smps igbt power inverters mosfet power inverter IGBT 250 amp High efficiency ultrafast diode high current igbt Amp. mosfet 500 watt Amp. mosfet 1000 watt 500 WATT smps 1000 WATT smps datasheet abstract.. |
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First line: 1200 volt mosfet Discrete Power Products Advanced Power Technology Technology. Beginning 1984 with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. commitment maintain enhance this position Abstract: .. current densities with a low on-state volt-age drop and the MOSFET structure allows for ease of .. 600 and 1200 volt devices,designated by the “GF” in the part number, these devices are .. Tags: 1200 volt mosfet Amp. mosfet 500 watt APT5015BVR APT50M65B2FLL* APT1201R2BFLL* sot-227 footprint smps new smps high power isotop bipolar igbt high power IGBT D-Series APT8024jll* APT75GP120JDF3 APT6* APT50M75JLL APT5024BVFR datasheet abstract.. |
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First line: Ametek pressure AMETEK Ametek dc motor Amp. mosfet 800 watt Ametek windjammer Ametek, Inc. Rotron Technical Products Division Lake Street Kent, Ohio 44240 User's Guide Number 4930720 Revision Volt, Watt Volt, 1200 Watt Brushless Motor Drive Electronics 5.7" (145 7.2" (183 Windjammer Produc Abstract: .. 120 Volt/800 Watt & 240 Volt/1200 Watt User's Guide Copyright 1993, Ametek, Inc. Number .. between the Commutation and Control circuits and the upper rail MOSFET's in the Power Output .. Tags: Ametek windjammer Ametek pressure single phase ac motor speed control Amp. mosfet 800 watt Ametek motor Ametek dc motor Ametek 5.7 Ametek 12 dc motor Ametek datasheet abstract.. |
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First line: 1000 volt mosfet HiperFET* 3N100P IXFR* transistor polar IXYSPOWER Efficiency through Technology neXt GeneratIOn n-cHanneL POWer MOsFets OctOBer 2007 OVerVIeW Abstract: .. IXYS Polar TM Power MOSFET. family are designed to improve the performance of high voltage power .. 1200 Volt. IXT 1 06N120P Polar MOSFETTM 1200 0.6 32.0000 270 13.3 900 3.000 42 A, P. IXT 1 .. Tags: transistor polar IXFR* 3N100P HiperFET* 1000 volt mosfet datasheet abstract.. |
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First line: APTGU180A120 APT30GP60BSC Amp. mosfet 1000 watt APTGU140A60T APT30GP60BSC* Advanced Power Technology Technology. Beginning with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. commitment m Abstract: .. - IGBT, MOSFET, and Diode Tutorial - Parallel Connection of Power Electronic Devices - Making .. 300, 600, 900, and 1200 volt for operation up to 200 kHz hard switching. NPT 2 Thunderbolt® NPT .. Tags: APT30GP60BSC* APTGU140A60T Amp. mosfet 1000 watt APT30GP60BSC APTGU180A120 sot-227 footprint SiC IGBT High Power Modules IGBT D-Series IGBT Designers Manual cree MOS APTM50HM75SCT APTM50AM24SC APTLGF210U120T APTGU180DA120 APTGT600U120D4 APT75GP120JDF3 datasheet abstract.. |
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First line: BJT de potencia IXDD 614 CHN 748 CHN 841 zener diode 1N PH 48 APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY APPLICATIONS Abhijit Pathak Introduction 1.1. MOSFET IGBT Technology. 1.2. MOSFET Models critical parameters 1.3. Turn-on Turn-off phenomenon their explanations 1.4. Power losses Drivers Abstract: .. equally rated high volt-age MOSFET. As far as driving IGBT is concerned, it resembles a MOS-FET .. 1200 Volts of isolation barrier is built in. Both IXBD4410 and IXBD4411 are feature-rich .. Tags: zener diode 1N PH 48 CHN 841 CHN 748 IXDD 614 BJT de potencia AN0002 |
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First line: bipolar IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT DRIVERS THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS lm339 igbt driver lm339 pwm mosfet IXAN0010 MOSFET/IGBT DRIVERS THEORY APPLICATIONS Abhijit Pathak Introduction 1.1. MOSFET IGBT Technology. 1.2. MOSFET Models critical parame Abstract: .. equally rated high volt-age MOSFET. As far as driving IGBT is concerned, it resembles a MOS-FET .. 1200 Volts of isolation barrier is built in. Both IXBD4410 and IXBD4411 are feature-rich .. Tags: lm339 pwm mosfet lm339 igbt driver MOSFET IGBT THEORY AND APPLICATIONS MOSFET IGBT DRIVERS THEORY AND APPLICATIONS bipolar IGBT DRIVERS THEORY AND APPLICATIONS IXAN0010 |
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First line: 1200 volt mosfet scr inverter schematic circuit AN1541/D Introduction Insulated Gate Bipolar Transistors INTRODUCTION power conversion relies more switched applications, semiconductor manufacturers need create products that approach ideal switch. ideal switch would have: zero resistance forward volt Abstract: .. MOSFET DIE SIZE 0.35 X 0.26 FORWARD DROP VOLTS Figure 1. a Reduced Forward Voltage Drop .. require devices rated for 600 to 1200 volts. Figure 2. Advanced Features Offered by the Latest .. Tags: 1200 volt mosfet Q4-92 transistor igbt IGBT 50 amp 1000 volt scr inverter schematic circuit SCHEMATIC WITH IGBTS pwm igbt power transistor bjt 1000 a mosfet cross reference MOSFET cross Low Capacitance bjt IGBT cross DL135 AN1541/d Advanced Linear Devices CROSS AN1541 D |
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First line: z 40 mosfet 5-486 A/"RF MOSFETs" mosfet 440 mhz "RF MOSFETs" IXZ308N120 Z-MOS Power MOSFET N-Channel Enhancement Mode Linear 175MHz MOSFET Switch Mode MOSFET Capacitance Z-MOS MOSFET Process Capacitance Z-MOSTMTM MOSFET Process Optimized Operation Linear Operation Ideal Class ABD, Applications Broad Abstract: .. Z-MOS RF Power MOSFET. VDSS = 1200 V. ID25 = 8.0 A. RDS on = 2.1 Ω. PDC = 880 W. Symbol Test Conditions .. 0 200 400 600 800 1000 1200. Vds in Volts. Capacitance in pF. IXZ308N120 Capacitances verses Vds .. Tags: "RF MOSFETs" mosfet 440 mhz A/"RF MOSFETs" 5-486 z 40 mosfet Z/"RF MOSFET" mosfet ixys IXZ308N120* A/"RF MOSFETs" "RF MOSFETs" "RF MOSFET" IXZ308N120 |
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First line: AC welder circuit diagram 200 ampere MOSFET datasheet N mosfet 100v 200A power mosfet 200A welder circuit diagram pdf FM400TU-2A 6-Pack High Power MOSFET Module Amperes/100 Volts Abstract: .. FM400TU-2A 6-Pack High Power MOSFET Module 200 Amperes/100 Volts. Powerex, Inc., 200 E. Hillis .. Total Gate Charge QG VDD = 48V, ID = 200A, VGS = 15V — 1200 — nC. Inductive Turn-on Delay Time td on .. Tags: welder circuit diagram pdf power mosfet 200A N mosfet 100v 200A 200 ampere MOSFET datasheet AC welder circuit diagram FM400TU-2A |
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First line: MC 4066* TECHNICAL DATA DATA SHEET 4066, REV.- SHD280504 FEATURES: Volt, Ohm, MOSFET (on) Electrically Equivalent IRF350 Series Abstract: .. ú 400 Volt, 0.3 Ohm, 14A MOSFET ú Low RDS on ú Electrically Equivalent to IRF350 Series .. trr - - 1200. nsec. INPUT CAPACITANCE VGS = 0 V. OUTPUT CAPACITANCE VDS = 25 V. REVERSE TRANSFER .. Tags: MC 4066* SHD280504 IRF350 |
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First line: PVI1050* Data Sheet 10029-G Series Photovoltaic Isolator 5-10 Volt Output Abstract: .. single 5-volt output or dual 5-volt outputs which can be series connected to produce 10 volts. A .. Isolated Voltage Source MOSFET Driver Up to 10μA Output Fast Response. GaAIAs LED. 2500V RMS .. Tags: PVI1050* photovoltaic coupler datasheet abstract.. |
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First line: SMD capacitor 22uF 35V NCP1207* TV flyback transformer ncp1207 smd TV flyback transformer pinout TND334/D Rev. 2009 Four-Output Internal Power Supply Reference Design Documentation Package Semiconductor Components Industries, LLC, 2009 Abstract: .. A Mosfet synchronous rectifier circuit was utilized in the positive leg of the 3.3 volt .. 1200 6.3V. 4.7uH. 4.7uH. 680, 16V x 2. 680 16V. 2.2K. 270 25V 270. 25V. 10uH. 0.1. 1200 6.3V. NTD4808N. NCP1587 .. Tags: TV flyback transformer pinout ncp1207 smd NCP1207* SMD capacitor 22uF 35V zener smd diode 3.3v 1w y2 smd zener Voltech* TV flyback transformer TV flyback converter SMD ZENER DIODE 26b SMD fuse 100L schematic diagram dc-dc flyback converter Rubycon 400V 680uF Rubycon 400v PM1000 TND334 D |
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First line: MOSFET and parallel Schottky diode A/mathcad* mathcad boost mathcad pfc 12 VOLT 10 AMP smps Selection Guide Schottky Diode Applications Silicon Carbide Schottky diodes ideal devices boost diode applications because superior reverse recovery characteristics zero reverse recovery current. Selection Sc Abstract: .. , as well as the turn-on switching loss in the boost MOSFET. This will result in both boost MOSFET .. The 600-volt diodes are available with 1, 2, 4, 6, 10 and 20-amp current ratings. The 1200-volt .. Tags: 12 VOLT 10 AMP smps mathcad pfc mathcad boost smps 300W Schottky diode Die PFC smps design mosfet with Integrated Schottky Diodes MOSFET and parallel Schottky diode mathcad diode schottky 600v CSD10060 Cree SiC diode die cree Sic A/mathcad* datasheet abstract.. |
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First line: 4800 mosfet MC33198 Abstract: .. It is used in conjunction with an external power MOSFET for high side drive applications. The .. C = 10nF 1200 2300 2750 μ s. C = 30nF 4800 8000 9200 μ s. ELECTRICAL CHARACTERISTICS.Tamb from - 40°C .. Tags: 4800 mosfet esd protect mosfet mosfet cross reference mosfet 4800 MC33198 |
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First line: esd protect mosfet MC33198 HIGH SIDE TMOS DRIVER Abstract: .. It is used in conjunction with an external power MOSFET for high side drive applications. The .. C = 10nF 1200 2300 2750 μ s. C = 30nF 4800 8000 9200 μ s. ELECTRICAL CHARACTERISTICS.Tamb from - 40°C .. Tags: esd protect mosfet mosfet 4800 MC33198 |
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First line: 4600 mosfet mosfet 10a 600v full bridge with IRFP450 schematic pdf irfp450 mosfet full bridge IRFP450 full bridge Schottky Diodes Their Applications Table electronic properties GaAs, 4H-SiC Property Band gap, (eV) Electron mobility, /Vs) Hole mobility, /Vs) Intrinsic carrier concentration, Electron Abstract: .. of the MOSFET improving the system efficiency and allowing for a reduction in size of the MOSFET .. 200 400 600 800 1000 1200. 0. 2. 4. 6. 8. 10. VB Volt . Fig. 1 Specific on-resistance of Si, GaAs and 4H-SiC .. Tags: 4600 mosfet smps 300W pfc 2000 watt MOSFET and parallel Schottky diode mosfet 10a 600v irfp450 mosfet full bridge IRFP450 full bridge full bridge with IRFP450 schematic pdf diode schottky 600v 600 watt smps schematic 500 WATT smps 1000 WATT smps datasheet abstract.. |
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First line: =M\\txon INC. PRODUCT N-CHANNEL ENHANCEMENT PARAMETER SYMBOL UNITS Drain-source Voit.(l) VDSS 1000 Drain-Gate tage (RssM.OMn) VDGR 1000 Gate-Source Voltage Continuous Abstract: .. Body Diode IS Modified MOSFET ' symbol showing the integral reverse P-N junct ion rect i-fier .. DrQin-source Volt. 1 VDSS DrQin-GQte VoltQge VDGR RGs=1.0Mn 1 GQte-Source VoltQge VGS .. Tags: datasheet abstract.. |
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First line: PVI5100* PVI1050* PVI5100 photovoltaic mosfet driver Photovoltaic coupler 1.029D Series Photovoltaic Isolator Abstract: .. which can be series connected to produce 10 volts. A PVI can serve as an isolator, a coupler and as .. Isolated Voltage Source n MOSFET Driver n Up to 10μA Output n Fast Response n. GaAIAs LED n. 2500V .. Tags: photovoltaic mosfet driver PVI5100 PVI1050* PVI5100* Photovoltaic coupler datasheet abstract.. |
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First line: SOLID STATE DEVICES, 14849 Firestone Boulevard Mirada,CA 90638 Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 Designer's Data Sheet SFF044J Abstract: .. VOLT 0.035 Q N-CHANNEL POWER MOSFET TO-257 MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT .. --110 0.53 2500 1200 310. V nsec ~C. --- ----- ------- pF. For thermal derating curves and other .. Tags: datasheet abstract.. |
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First line: 1200 volt mosfet SMD ZENER DIODE 26b TV flyback transformer pinout TV flyback transformer TND334/D Rev. 2010 Four-Output Internal Power Supply Reference Design Documentation Package Semiconductor Components Industries, LLC, 2010 Abstract: .. A Mosfet synchronous rectifier circuit was utilized in the positive leg of the 3.3 volt .. 1200 6.3V. 4.7uH. 4.7uH. 680, 16V x 2. 680 16V. 2.2K. 270 25V 270. 25V. 10uH. 0.1. 1200 6.3V. NTD4808N. NCP1587 .. Tags: TV flyback transformer TV flyback transformer pinout SMD ZENER DIODE 26b 1200 volt mosfet inductor 10uH 3A coilcraft TND334 D |
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First line: C3148* transistor c3148 C3148 transistor FEATURES Greter Efficiency Current Mode Switching Architecture Provides Superior Line Trnsient Response Wide Input Voltge Rnge User Defined Current Limit Short Circuit Protection Shutdown Dropout Voltge Stndby Current Cost Avilble 8-Led PDIP 8-Led SOIC APPLIC Abstract: .. architecture to drive an external P-channel MOSFET at frequencies up to 250 kHz. Constant off .. 5.02 0 400 2000 800 1200 1600. 5.06. 5.05. 5.04. 5.03. 5.09. 5.07. 5.08. FIGURE 1 CIRCUIT. VIN = 6 VOLTS. VIN .. Tags: transistor c3148 capacitor 100MF 100v C3148 transistor C3148* ADP1147-3 |
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First line: 1200 volt mosfet SOLID STATE DEVICES, SFF70N10M SFF70N10WZ 14849 Firestone Boulevard Mirada,CA 90638 Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 Designer's Datasheet Rugged construction with poly silicon gate Ultra RDS(on) high transconductance Excellent high temperature stability Very fast swi Abstract: .. : SMM70N10 Types 70 AMP 600 VOLT 0.030 a N-CHANNEL POWER MOSFET TO-254 TO-254Z MAXIMUM RATINGS .. VGS=0 Volts VDS=25 Volts f= 1 MHz Ciss Coss Crss — 4100 1200 310 — PF For thermal derating .. Tags: 1200 volt mosfet datasheet abstract.. |
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First line: ^OLID STATE DEVICES, Firestone Boulevard Mirada,CA 90638 Phone: (714) 670-SSDI (7734) (714) 522-7424 Designer's Data Sheet SFF70N10C Rugged construction with poly silicon gate Ultra RDS(on) high transconductance Excellent high temperature stability Very fast switching speed Abstract: .. Volts VDS=25 Volts f= 1 MHz Ciss Coss Crss 4100 1200 310 .. PF For thermal derating curves and .. 70 AMP 600 VOLT 0.0300 N-CHANNEL POWER MOSFET T0-254 CERAMIC. Rugged construction .. Tags: datasheet abstract.. |
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First line: STATE DEVICES, 14849 Firestone Boulevard Mirada.CA 90638 Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 Designer's Data Sheet Logic Level Gate Drive Rugged construction with poly silicon gate RDS(on) high transconductance Abstract: .. VOLT 0.030 Q N-CHANNEL LOGIC LEVEL POWER MOSFET TO-257 MAXIMUM RATINGS CHARACTERISTIC SYMBOL .. Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f= 1 MHz Ciss Coss Crss — 3300 1200 200 â .. Tags: datasheet abstract.. |
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First line: 600V igbt dc to dc buck converter SiC IGBT High Power Modules smps welder inverter sot-227 footprint sot-227 footprint Power Semiconductors Power Modules Power MOSFETs Power Products Group Abstract: .. MOSFET P/N FREDFET P/N Package. Volts Ohms Amps low trr MOSFET Style. 1200 4.700 3.5 - - - APT1204R7KFLL. 1000 3.000 4 APT1003RKLL APT1003RKFLL. 4.700 3.5 - - - APT1204R7BFLL. 1200 1.400 9 - - - APT1201R4BFLL .. Tags: sot-227 footprint sot-227 footprint smps welder inverter SiC IGBT High Power Modules 600V igbt dc to dc buck converter datasheet abstract.. |
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First line: 7815 schematics D408 mosfet mosfet d408 APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There many applications which require pulse power. needed burst energy derived rapidly discharging previously charged capa Abstract: .. 1200 Volts of isolation barrier is built in. Both IXBD4410 and IXBD4411 are feature-rich .. supply to ensure MOSFET/IGBT turn-off even in electrically noisy environment; 5. 5 volt logic .. Tags: mosfet d408 D408 mosfet 7815 schematics REGULATOR IC 7815 h-bridge zcs ZTX550 ZTX450 welding rectifier schematic VUO 36-16N08 UC3865 transistor 7815 tip41c tip42c single phase bridge fully controlled rectifier SCHEMATIC POWER SUPPLY WITH IGBTS schematic diagram welding inverter control common schematic diagram welding inverter control IXAN0013 IXBH40N140 IXBH40N160 IXBF40N140 IXBF40N160 |
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First line: D408 mosfet schematic diagram welding inverter control opto-coupler darlington pnp REGULATOR IC 7815 mosfet d408 APPLICATION NOTE: IXAN0013 CAPACITOR CHARGE/DISCHARGE CIRCUITS, UTILIZING HIGH VOLTAGE IGBTS RESONANT MODE TECHNIQUES By:ABHIJIT D.PATHAK There many applications which require pulse power Abstract: .. 1200 Volts of isolation barrier is built in. Both IXBD4410 and IXBD4411 are feature-rich .. supply to ensure MOSFET/IGBT turn-off even in electrically noisy environment; 5. 5 volt logic .. Tags: mosfet d408 REGULATOR IC 7815 opto-coupler darlington pnp schematic diagram welding inverter control D408 mosfet IXAN0013 IXBH40N140 IXBH40N160 IXBF40N140 IXBF40N160 |
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First line: an799 microchip an799* POWER MOSFET 4600 AN799 Matching MOSFET Drivers to MOSFETs Matching MOSFET Drivers to MOSFETs AN799 Matching MOSFET Drivers MOSFETs Author: Jamie Dunn Microchip Technology Inc. Power dissipation quiescent current draw MOSFET driver. Abstract: .. MOSFET driver output and gate drive transformer are used to balance the volt-time of the gate .. 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401 .. Tags: Matching MOSFET Drivers to MOSFETs AN799 Matching MOSFET Drivers to MOSFETs POWER MOSFET 4600 an799* an799 microchip TC4469 tc4431 TC4427 tc4423 TC4420 tc428 boost TC428 p-channel power mosfet 14A p-channel mosfet driver p-channel 250V power mosfet multiple mosfet gate driver AN799 |
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First line: ^litron DEVICES.INC. PRODUCT P-CHANNEL ENHANCEMENT PARAMETER SYMBOL UNITS Drain-source Vo1t.(1) VDSS -100 Drain-Gate Vo1tage (Rss-l.OMn) VDGR -100 Gate-Source Voltage Abstract: .. V BR DSS VGS=OV 1 D=-250 JJLA -100 - - V Gate Threshold Volt ase VGS TH VDS-VGS 1 D—250 jjlA - .. UNITS Con t i nuous Source Current Body Diode IS Modified MOSFET symbol showing the integral .. Tags: datasheet abstract.. |
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First line: 6A, 100v fast recovery diode UNISONIC TECHNOLOGIES CO., UF9640 Preliminary Power MOSFET Amps, Volts P-CHANNEL POWER MOSFET Abstract: .. 11 Amps, 200 Volts P-CHANNEL POWER MOSFET. Ñ DESCRIPTION. The UF9640 is a P-channel Power MOSFET .. DYNAMIC PARAMETERS Input Capacitance CISS 1200 pF. Output Capacitance COSS 370 pF. Reverse .. Tags: 6A, 100v fast recovery diode UF9640 |
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First line: tc4421 TC4431 application Matching MOSFET Drivers to MOSFETs AN786 AN786 Driving Power MOSFETs High-Current, Switch Mode Regulators Author: Abid Hussain, Microchip Technology, Inc. Abstract: .. a level shifter, translating TTL-compatible levels to MOSFET drive volt-ages. A device like .. , Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401 .. Tags: TC4431 application TC4431 TC4428 TC4427 TC4424 tc4421 TC4420 TC1410 Matching MOSFET Drivers to MOSFETs manufacturer of mosfet AN786 AN786 |
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First line: make welding SMPS datasheet irfp460 igbt PFC 5kw MOSFET IGBT THEORY AND APPLICATIONS smps 500W IGBT MOSFET: Choose Wisely With proliferation choices between MOSFETs IGBTs, becoming increasingly difficult today's designer select best device their application. Here basic guidelines that will help this Abstract: .. 1000 1200. 1400. 1 10 100 1000. Frequency kHz Volatge V IGBT. IGBT. MOSFET. MOSFET. ? ? ? • Operation .. is to examine the cross-over area that includes applications operating above 250 volts .. Tags: MOSFET IGBT THEORY AND APPLICATIONS PFC 5kw make welding SMPS smps igbt smps 500W smps 300W parallel mosfet IRG4PC40U IRFP460A irfp460 igbt welding IGBT cross datasheet irfp460 mosfet datasheet irfp460 igbt datasheet abstract.. |
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First line: TECHNICAL DATA DATA SHEET 607, SHD219504 HERMETIC POWER MOSFET N-CHANNEL Abstract: .. ú 400 Volt, 0.3 Ohm, 9.0A MOSFET ú Low RDS on ú Equivalent to IRF350 Series. MAXIMUM RATINGS ALL .. trr - - 1200. nsec. INPUT CAPACITANCE VGS = 0 V. OUTPUT CAPACITANCE VDS = 25 V. REVERSE TRANSFER .. Tags: SHD219504 |
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First line: TECHNICAL DATA DATA SHEET 621, SHD226410 HERMETIC POWER MOSFET P-CHANNEL Abstract: .. ú -200 Volt, 0.5 Ohm, -7.7A MOSFET ú Isolated Hermetic Metal Package ú Fast Switching ú Low RDS .. - 1200. 570 81. -. pF. THERMAL RESISTANCE, JUNCTION TO CASE RthJC - - 2.1 ïC/W. SHD226410. 221 WEST .. Tags: P-channel MOSFET 100V, 10 Amps SHD226410 |
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First line: Order this document MRF5S21130/D Abstract: .. The RF MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement - Mode Lateral .. Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 .. Tags: MRF5S21130 |
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First line: Silicon Controlled Rectifier 50 amp schematic current limiter battery charger 48 VDC scr firing circuit for dc servo driver schematic satellite finder laser range finder schematics power conditioning More than solutions, enabling possibilities Switching Power Conditioning Signals Abstract: .. UPF1N100 1A, 1000V High Voltage MOSFET. FEATURES Low on-state resistance Avalanche and surge .. Schottky products with the upcoming introduction of a 1 Amp, 600 Volt device. The product will .. Tags: laser range finder schematics schematic satellite finder scr firing circuit for dc servo driver schematic current limiter battery charger 48 VDC UFT40010 UFT20140 Transistor 2N2219A thyristor cdi thyristor battery charging squib driver Silicon Controlled Rectifiers High frequency Silicon Controlled Rectifier 50 amp scr firing circuit for dc servo driver SCR 30A 500V SCHEMATIC POWER SUPPLY WITH IGBTS datasheet abstract.. |
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First line: welder mosfet 3kw mosfet bridge rectifier 240V AC TRANSISTOR 3kw 220v 25a diode bridge LMH5010RB 500V APPLICATION SPECIFIC POWER MODULE CONVERTER LMH5010RB Application Specific Power Module (ASPM) that integrates necessary power functions build converter, 3KW, with 220/240V input. System design time Abstract: .. 1200. 1.3. 40. 1. UNIT. Volts. Amps. ns. °C/W. Symbol. VRRM VF. IF av IRRM trr RθJC. Characteristic / Test .. Total Turn on Delay Time driver + MOSFET Total Turn off Delay Time driver + MOSFET MIN TYP MAX .. Tags: 220v 25a diode bridge TRANSISTOR 3kw bridge rectifier 240V AC welder mosfet welder circuit diagram pdf welder circuit welder PFC 3kw mosfet 3kw LMH5010RB high frequency welder circuit diagram pdf AC welder circuit diagram 3kw pfc 3kw mosfet LMH5010RB |
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First line: n-channel mosfet transistor low power MIC4416 MIC4416/4417 IttyBittyTM Low-Side MOSFET Driver Abstract: .. Avoid instantaneously applying volt-age, capable of very high peak current, directly to or .. Using a Logic-Level MOSFET. At low voltages, the MIC4416/7’s internal P- and N-channel MOSFET .. Tags: n-channel mosfet transistor low power SWITCH-MODE DRIVER Logic Level N-Channel Power MOSFET and/power MOSFET INVERTER 60v 10KHz MOSFET MIC4416 MIC4416 4417 |
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First line: MIC4416YM4 and/power MOSFET INVERTER MIC4416/4417 MIC4416/4417 IttyBittyTM Low-Side MOSFET Driver Abstract: .. Avoid instantaneously applying volt-age, capable of very high peak current, directly to or .. Using a Logic-Level MOSFET. At low voltages, the MIC4416/7’s internal P- and N-channel MOSFET .. Tags: and/power MOSFET INVERTER mic4417ym4 mic4417 MIC4416YM4 60v 10KHz MOSFET MIC4416 4417 |
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First line: MIC4416 MIC4416/4417 IttyBittyTM Low-Side MOSFET Driver Final Information Abstract: .. Avoid instantaneously applying volt-age, capable of very high peak current, directly to or .. Using a Logic-Level MOSFET. At low voltages, the MIC4416/7’ s internal P- and N-channel MOSFET .. Tags: mic4417 mic4416 and/power MOSFET INVERTER 60v 10KHz MOSFET MIC4416 MIC4416 4417 |
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First line: MIC4416/4417 MIC4416/4417 IttyBittyTM Low-Side MOSFET Driver Final Information Abstract: .. Avoid instantaneously applying volt-age, capable of very high peak current, directly to or .. Using a Logic-Level MOSFET. At low voltages, the MIC4416/7’ s internal P- and N-channel MOSFET .. Tags: 60v 10KHz MOSFET MIC4416 4417 |
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First line: TECHNICAL DATA DATA SHEET 370, REV. SHD226412 SHD226412R HERMETIC POWER MOSFET N-CHANNEL Abstract: .. HERMETIC POWER MOSFET N-CHANNEL. DESCRIPTION: 100 VOLT, 33 AMP, 0.06 OHM MOSFET IN A HERMETIC TO .. 2500 1200 1100. pF. SHD226412 SHD226412R. 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE .. Tags: SHD226412 SHD226412R |
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First line: IXBH9N160 flyback converter 2A 15V ixbh 9n160 mosfet 1500v Technical Application IXAN0014 Comparative Performance BIMOSFETs Fly-Back Converter Circuits typical applications flyback converter auxiliary power supply IGBT gate driver inverter. essential requirement switch flyback converter drives inver Abstract: .. for example replace a 1000V MOSFET in a flyback converter. Because of the blocking volt-age of .. At 2 A and 15 V gate drive, the MOSFET has a voltage drop of 18 V and the BIMOSFET has only 4 volt drop .. Tags: mosfet 1500v ixbh 9n160 flyback converter 2A 15V IXBH9N160 IXAN0014 |
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First line: Mutron DEVICES.INC. PRODUCT N-CHANNEL ENHANCEMENT PARAMETER SYMBOL UNITS Drain-source Volt.(l) VDSS Drain-Gate Vo1tage (RGS=1.0Mn) VDGR Gate-Source Voltage Cont inuous Abstract: .. UNITS Cont inuous Source Current Body Diode IS Modified MOSFET symbol showing the integral .. Tc"*25* C IF=21A d i/dt"100A/ JJ.S - - 1200 ns Reverse Recovery Charge Orr - 8.1 - jjlC A27 1 TJ = 25 .. Tags: datasheet abstract.. |
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First line: PRODUCT CATALO JfoMtxan DEVICES,INC. N-CHANNEL ENHANCEMENT 500V, 13A. 0.40 SDF450 SDF450 RUGGED PACKAGE HI-REL CONSTRUCTION Abstract: .. UNITS Con t i nuous Source Current Body Diode IS Modified MOSFET symbol showing the integral .. - - 1.4 V VSD Tc=+25°C VGS=OV Vol.ta,ge 2 Reverse trr Tc=+25° C - - 1200 ns Recovery Time IF=13A .. Tags: datasheet abstract.. |
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First line: PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT 60V, 30A, 0.04 SDF044 SDF044 RUGGED PACKAGE HI-REL CONSTRUCTION Abstract: .. .0 MHz - 2500 - - PF Output Capacitance COSS - 1200 - PF Reverse Transfer Capac i tance CRSS - 310 - PF .. UNITS Cont inuous Source Current Body Diode IS Modified MOSFET symbol showing the integral .. Tags: datasheet abstract.. |
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First line: Power MOSFET SOT-223 1N60 diode diode 1n60 1N60G* 1N60 PACKAGE UNISONIC TECHNOLOGIES CO., 1N60 Amps, 600/650 Volts N-CHANNEL MOSFET 1N60 high voltage MOSFET designed have better characteristics, such fast switching time, gate charge, on-state resistance have high rugged avalanche characteristics. Th Abstract: .. 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET. Ñ DESCRIPTION. The UTC 1N60 is a high voltage MOSFET and .. 1200. 1400. 400. 6. 0. 0. 2. 4. 5. Drain-Source On-State Resistance Characteristics. Drain to Source .. Tags: 1N60G* 1N60 diode Power MOSFET SOT-223 diode 1n60 1N60L 1N60 PACKAGE 1N60 mosfet 1N60 1N60 |
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First line: Document Number: MRF7S19120N Rev. 1/2009 Power Field Effect Transistor Channel Enhancement Mode Lateral MOSFET Abstract: .. N- Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with .. • Typical Single -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg .. Tags: MRF7S19120N |
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First line: ir2233j application pdf IR2133* IR2235 ir2233j application pdf application note ir2233j pdf Data Sheet PD60107 rev.W IR2133/IR2135(J&S) (PbF) IR2233/IR2235(J&S) 3-PHASE BRIDGE DRIVER Abstract: .. Description The IR2133IR2135/IR2233IR2355 J&S are high voltage, high speed power MOSFET .. power MOSFETs or IGBTs in the high side configuration which operates up to 600 volts or 1200 .. Tags: application note ir2233j pdf ir2233j application pdf IR2235 IR2133Â* ir2233j application pdf IRG4PH50KD IRG4PH40KD IR2135 IR2233* IR2135 PD60107 IR2133 IR2135 IR2233 IR2235 |
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